JPH02270375A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH02270375A JPH02270375A JP1090618A JP9061889A JPH02270375A JP H02270375 A JPH02270375 A JP H02270375A JP 1090618 A JP1090618 A JP 1090618A JP 9061889 A JP9061889 A JP 9061889A JP H02270375 A JPH02270375 A JP H02270375A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- image sensing
- state image
- sensing element
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract 1
- 239000005304 optical glass Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(M業上の利用分野)
本発明は、電子内視鏡や超小型カメラ等の固体撮像装置
に係わり、特にその実装方法の改良をはかりた固体撮像
装置に関する。[Detailed description of the invention] [Object of the invention] (Field of application in M industry) The present invention relates to solid-state imaging devices such as electronic endoscopes and ultra-compact cameras, and particularly relates to solid-state imaging devices with improved mounting methods. It relates to an imaging device.
(従来の技術)
従来、COD等を用いた固体撮像素子は第3図に示すご
とくセラミックのチップキャリア6に固体撮像素子lを
配置し、′電気的な接続はボンディングワイヤ7により
て行われていた。また、固体撮像素子lの表面を保護す
るためチップキャリア6上憂こ光学ガラス8を設けるの
が一般的であった。(Prior Art) Conventionally, a solid-state image sensor using COD or the like has a solid-state image sensor l disposed on a ceramic chip carrier 6, as shown in FIG. Ta. Furthermore, it has been common practice to provide an optical glass 8 on the chip carrier 6 to protect the surface of the solid-state image sensor 1.
さらfこ、外部への接続はチップキャリアにリード線等
を直接−ンダ付けする。コネクターこ接続する。Furthermore, external connections are made by directly attaching lead wires to the chip carrier. Connect the connector.
フレキシブルプリント基板をハンダ付けする等の方法が
取られている。Methods such as soldering a flexible printed circuit board are used.
しかしながら、上記の方法ではワイヤーボンディングの
ためのパVド部分や、ガラスを固定するための部分が必
要不可欠でありこれらがチップキャリアの大きさを決定
していた。iた。ハンダ付けによる外部との接続はハン
ダしろを必要とし。However, in the above method, a padded portion for wire bonding and a portion for fixing glass are essential, and these determine the size of the chip carrier. It was. External connections by soldering require a solder margin.
コネクタの場合もそのためのスペースを必要とする。Connectors also require space.
このため、その撮像面方向で比較した場合、チップキャ
リアは固体撮像素子よりかなり大きくならざるおえず、
固体撮像装置全体が大形比してしまう。Therefore, when compared in the direction of the imaging surface, the chip carrier has to be considerably larger than the solid-state imaging device.
The entire solid-state imaging device becomes larger.
これらの問題を解決する方法として光透過型の基板に固
体撮I#!素子をフェイスダウンで実装する方法が提案
されている。As a way to solve these problems, solid-state photography I# on a light-transmissive substrate! A method of mounting elements face-down has been proposed.
しかし従来の固体撮像素子では第4図に示すかごと<、
’、を極パVド2が2辺にほぼ均等に配置されているた
め一辺から配線を取り出す場合、他辺からの配線を光透
過性の基板上で撮像エリアを避けて引き回すしかない。However, in the conventional solid-state image sensor, the cage shown in FIG.
', Since the pole pads and V-dopers 2 are arranged almost equally on two sides, when wiring is taken out from one side, the only way is to route the wiring from the other side on a light-transmissive substrate, avoiding the imaging area.
従りて数が多くなると基板の大きさが固体撮像素子を大
きく上回ってしまい、この方法の利点を十分に活かしき
れなかりた。Therefore, when the number of devices increases, the size of the substrate greatly exceeds that of the solid-state image sensor, and the advantages of this method cannot be fully utilized.
このため、電子内視鏡や超小形カメラ等の固体撮像装置
自身の大きさが問題となるような製品に8いて、性能そ
のものを限定してしまうという不具合を有していた。For this reason, the solid-state imaging device itself has the problem of limiting its performance in products where the size of the solid-state imaging device itself is a problem, such as electronic endoscopes and ultra-compact cameras.
(発明が解決しようとする課項)
このよう(こ従来、チップキャリアや基板の大きさや配
線の取ジ出し方法により固体撮像装置の大きさが決まる
ため、装置全体の小形比をはかることは困難であった。(Problem to be solved by the invention) As described above, conventionally, the size of a solid-state imaging device is determined by the size of the chip carrier and substrate and the method of extracting the wiring, so it is difficult to measure the compactness ratio of the entire device. Met.
本発明は上記事情を考慮してなされたもので。The present invention has been made in consideration of the above circumstances.
その目的とするところは撮像面方向で比較して固体撮像
素子と同等の大きさで固体撮1象装置を実装し、電子内
視鏡や超小型カメラ等に適した固体撮像装置を提供する
ことにある。The objective is to implement a solid-state imaging device with a size equivalent to that of a solid-state imaging device in the direction of the imaging surface, and to provide a solid-state imaging device suitable for electronic endoscopes, ultra-compact cameras, etc. It is in.
(n、題を解決するための手段)
本発明は上記目的を達成するためにα極パνドを一辺に
よせた固体撮I#!素子を電極パターンを設けた固体撮
像素子と同等の大きさの光透過性の基板ζこ搭載し、そ
の光透過性の基板の電橿パVドがよせられた一辺からフ
レキシブルプリント基板によりて配線を取り出すもので
ある。(n. Means for Solving the Problem) In order to achieve the above object, the present invention provides a solid-state camera I#! in which the α-pole pad is shifted to one side. The device is mounted on a light-transmissive substrate of the same size as the solid-state imaging device provided with an electrode pattern, and wiring is carried out using a flexible printed circuit board from one side of the light-transmissive substrate where the electric wire is aligned. It is to take out.
(作用)
本発明によれば電極パッドが配線を取り出す一辺に集ま
つているため光透過性基板上の電極パターンを基板上に
固体撮像素子の大きさを越えて配線する必要がなく、光
透過性基板と固体撮像素子をほぼ同等の大きさにするこ
とができ、固体撮像装置を小形比できる。 ′
(実施例)
以下1本宅間の実施例を図面を用いて説明する。(Function) According to the present invention, since the electrode pads are gathered on one side from which the wiring is taken out, there is no need to wire the electrode pattern on the light-transmitting substrate beyond the size of the solid-state image sensor, and the light-transmitting The solid-state imaging device and the solid-state imaging device can be made approximately the same size, and the solid-state imaging device can be made smaller. (Example) An example of a single-family home will be described below with reference to drawings.
第1図は本発明の第1の実施例を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of the present invention.
を極バVド2をすべて一辺によせた固体撮像素子1をガ
ラス基板3上の電極パターンにバンプを用いて電気的憂
こ接続している。電極パターンは基板の側面に回り込ん
でおりここでフレキシブルプリント基板4と接続されて
いる。A solid-state image sensing device 1 with all poles V and 2 aligned on one side is electrically connected to an electrode pattern on a glass substrate 3 using bumps. The electrode pattern wraps around the side surface of the board and is connected to the flexible printed circuit board 4 here.
このような構成であればガラス基板と固体撮像素子は撮
像面方向でその外形がほぼ同等の大きさとなV、電子内
視鏡や超小形カメラに使用した場合、細径1ヒが達成で
きる。With such a configuration, the glass substrate and the solid-state image pickup device can have approximately the same external size in the direction of the image pickup surface, and when used in an electronic endoscope or an ultra-compact camera, a small diameter can be achieved.
第2図は本発明の第2のJ施列を示す斜悦図である。FIG. 2 is a perspective view showing the second J arrangement of the present invention.
固体撮像素子lの電極パッド2は2つを残して一辺によ
せられて2り、その2つの電極はガラス基板3上の電極
パターンによって@gご一辺に配線されている。な2そ
の際の1極パターンは固体撮像素子1の撮1象エリア5
を避けてその端面との間に配線されているため画1象4
こ影jを及ぼすことなくしかもガラス基板3は固体撮1
象素子lと同等の大きさである。All but two of the electrode pads 2 of the solid-state imaging device 1 are placed on one side, and these two electrodes are wired on one side by an electrode pattern on the glass substrate 3. 2 At that time, the one-pole pattern is the imaging area 5 of the solid-state image sensor 1.
Image 1 Image 4
In addition, the glass substrate 3 can be used for solid-state imaging 1 without causing any shadows.
It has the same size as the quadrature element l.
なお1本発明は上述した各実施例に限定されるものでは
ない。Note that the present invention is not limited to the embodiments described above.
例えば、固体Ff&像素子の一辺によぜずに残すパッド
の数は2つとは限らず、配線によってそれらを一辺#C
渠める際、ガラス基板が固体撮1象累子より著しく大き
くならず、しかも撮像エリアに影響を与えない程度であ
れば1つでも3つ以上でも良い。For example, the number of pads left without moving on one side of the solid-state Ff & image element is not limited to two, but they can be placed on one side #C by wiring.
When draining, one or three or more may be used as long as the glass substrate is not significantly larger than one solid-state sensor and does not affect the imaging area.
また、実施例においては電極パターンを光透過性基板の
側面に引き出し、フレキシブルプリント基板と接続して
いるが固体撮1#!素子が搭載されている同一面で接続
しても良い。In addition, in the embodiment, the electrode pattern is drawn out to the side of the light-transmissive substrate and connected to the flexible printed circuit board, but solid-state photography 1#! They may be connected on the same surface on which the elements are mounted.
その他1本発明の髪旨を逸脱しない範囲で種々変形して
実施することができる。In addition, various modifications can be made without departing from the spirit of the present invention.
以上詳述したように本発明によればガラス基板を固体撮
@素子と同等の大きさにできるため、特に撮1象而方向
の外形をこおいて小形な固体撮1*装置を実現できる。As described in detail above, according to the present invention, the glass substrate can be made to have the same size as the solid-state sensor@device, so a compact solid-state sensor 1* device can be realized, especially in terms of the external shape in the direction of the image sensor.
第1図は本発明の第1の実施例を示す斜視図、第2図は
本発明の第2の実施例を示す斜視図、第3図は従来装置
の概略構成を示す断面図、第4図は従来例を示す斜視図
である。
1・・・固本撮慮装置、2・・・電也パッド、3・・・
ガラス基板、4・・・フレキシブルプリント基板、5・
・・撮はエリア、6・・・チップキャリア、7・・・ボ
ンディングワイヤ、8・・・光学ガラス。
代理人 弁理士 則 近 Wl 右同
松 山 光 2第 1 図
@2図
第 3 図
第 4 図FIG. 1 is a perspective view showing a first embodiment of the present invention, FIG. 2 is a perspective view showing a second embodiment of the present invention, FIG. 3 is a sectional view showing a schematic configuration of a conventional device, and FIG. The figure is a perspective view showing a conventional example. 1... Fixed book photography device, 2... Denya pad, 3...
Glass substrate, 4...Flexible printed circuit board, 5.
...Photographs area, 6...chip carrier, 7...bonding wire, 8...optical glass. Agent Patent Attorney Nori Kon Wl Same as right
Hikaru Matsuyama 2nd Figure 1 @ Figure 2 Figure 3 Figure 4
Claims (3)
みを持った光透過基板と前記固体撮像素子を外部に接続
するフレキシブルな基板を具備し、前記半導体素子の4
辺のうちその1辺の方向だけに前記フレキシブルな基板
が電気的に接続されている固体撮像装置において、前記
フレキシブルな基板が接続されている基板に最も近い一
辺に、固体撮像素子の複数の電極パッドの内、半数以上
が形成されていることを特徴とする固体撮像装置。(1) A solid-state image sensor, a thick light-transmitting substrate on which the solid-state image sensor is mounted, and a flexible substrate for connecting the solid-state image sensor to the outside;
In a solid-state imaging device in which the flexible substrate is electrically connected only in the direction of one of the sides, a plurality of electrodes of the solid-state imaging device are arranged on one side closest to the substrate to which the flexible substrate is connected. A solid-state imaging device characterized in that more than half of the pads are formed.
さであることを特徴とする請求項1記載の固体撮像装置
。(2) The solid-state imaging device according to claim 1, wherein the solid-state imaging device and the light-transmitting substrate have the same size.
シブルな基板が接続されている一辺以外に形成されたも
のは前記光透過基板上の固体撮像素子の撮像エリア上で
ない部分に形成された導体パターンによりて前記フレキ
シブルな基板が接続されている一辺に配線されているこ
とを特徴とする請求項1記載の固体撮像装置。(3) Of the electrode pads of the solid-state image sensor, those formed on a side other than the one side to which the flexible substrate is connected are conductive patterns formed on the light-transmitting substrate in a portion that is not on the imaging area of the solid-state image sensor. 2. The solid-state imaging device according to claim 1, wherein wiring is provided on one side to which the flexible substrate is connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1090618A JP2831689B2 (en) | 1989-04-12 | 1989-04-12 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1090618A JP2831689B2 (en) | 1989-04-12 | 1989-04-12 | Solid-state imaging device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02270375A true JPH02270375A (en) | 1990-11-05 |
JP2831689B2 JP2831689B2 (en) | 1998-12-02 |
Family
ID=14003476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1090618A Expired - Lifetime JP2831689B2 (en) | 1989-04-12 | 1989-04-12 | Solid-state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2831689B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4323799B4 (en) * | 1992-07-15 | 2005-04-28 | Toshiba Kawasaki Kk | Semiconductor device and method for its production |
-
1989
- 1989-04-12 JP JP1090618A patent/JP2831689B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4323799B4 (en) * | 1992-07-15 | 2005-04-28 | Toshiba Kawasaki Kk | Semiconductor device and method for its production |
Also Published As
Publication number | Publication date |
---|---|
JP2831689B2 (en) | 1998-12-02 |
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