JPH02265738A - Transparent gas barrier film - Google Patents

Abstract

PURPOSE:To obtain a transparent gas barrier film with few pinholes, being capable of decreasing electric conductivity and with excellent gas barrier characteristics for steam, oxygen, etc., by constituting a gas barrier layer of the transparent gas barrier film of an oxide layer of a metal consisting of In and/or Sn and incorporating a specified fluorine in said oxide layer. CONSTITUTION:A gas barrier layer 2 is laminated on one face of a base consisting of a plastic film 1 such as polyethylene and polyester. This gas barrier layer is a metal oxide of a single metal such as In or Sn or an alloy thereof and this oxide layer is bound with 0.05-1 atom of fluorine to an atom of the metal. Surface electric resistance can be made higher with this fluorine without spoiling gas barrier characteristics. In addition, if necessary, a thermoplastic adhesive layer 3 is laminated on one face of the transparent gas barrier film. The gas barrier layer 2 is formed by means of a vacuum thin film forming method such as sputtering. A package film for food packagings, drugs, electronic parts, etc., for moisture proofing an oxidation-proofing can be obtd. thereby.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a transparent gas barrier film.

More specifically, the present invention relates to a transparent gas barrier plastic film that is transparent and has low permeability to gases such as water vapor and oxygen, and particularly relates to a transparent gas barrier film that is suitably used for electronic components, foods, medicines, and the like.

[Prior Art] Conventionally, the following transparent gas barrier films are known for use in, for example, electroluminescent devices.

(1) Plastic films with excellent moisture resistance, e.g.
A method using ethylene monochloride trifluoride (hereinafter abbreviated as PCTFE).

(2) A vapor-deposited layer of silicon oxide is provided between two layers of polyolefin films (Utility Model Publication No. 61-42319).

(3) A transparent resin film provided with a sputtered film of silicon oxide or silicon nitride (Utility Model Publication No. 62-24959).

(4) A material in which a metal oxide layer such as In, Sn, or Zn is laminated on a plastic film, which was previously proposed by the present inventors (Japanese Patent Application Laid-Open No. 63-237940).

[Problems to be Solved by the Invention] However, such conventional gas barrier films have the following problems.

When using plastic film (1), it is necessary to use a thick film because the moisture resistance is not sufficient.
Poor flexibility. Even in the case of a PCTFE film with excellent moisture resistance, a thickness of 200 μm or more is required. Furthermore, since plastic films have poor moisture-proofing performance at high temperatures, the life of the electroluminescent device will be shortened if used at high temperatures.

In order to obtain high moisture-proof performance, the thickness of (2) and (3) silicon oxide or silicon nitride must be increased to 300 Å or more, and practically 500 Å or more. This results in cracking and peeling. Furthermore, as the film thickness of silicon oxide or silicon nitride increases, the transparency decreases and the luminance of light emission decreases.

Although (4) improves the problems of (1) to (3), there are pinholes and there is room for improvement in gas barrier properties. In addition, the gas barrier layer is used together with a transparent conductive film, and has a surface resistance value of 10Ω/low to 106Ω.
/ It has conductivity comparable to that of a mouth. However, when the conductivity is within this range, for example, when the extraction electrode is drawn out from inside the light emitting element as shown in FIG. 4, there is a problem that the extraction electrode and the end of the conductive gas barrier layer come into contact with each other, causing a short circuit. There was a risk that this would occur.

In order to solve these problems, the inventors of the present invention have made extensive studies and have developed a transparent gas barrier film that has fewer pinholes, can reduce conductivity, and has excellent gas barrier properties against gases such as water vapor and oxygen. This is the heading that led to the present invention.

[Means for Solving the Problems] That is, the present invention provides a transparent gas barrier film in which a gas barrier layer is laminated on at least one side of a substrate made of a plastic film, wherein the gas barrier layer is formed by oxidation of a metal made of In and/or Sn. The present invention provides a transparent gas barrier film characterized in that the metal oxide layer contains 0.05 to 1.0 atoms of fluorine per 1 atom of metal.

Here, the content ratio of fluorine is E 1 e c t r o
n5pectroscopy for Chem
It is calculated from the atomic ratio (m vs. integrated intensity/photoionization cross section) from broadband spectrum 1H by ical analysis (ESCA) analysis. That is, in an indium oxide film containing fluorine, it is expressed as the ratio of the number of fluorine atoms to one atom of indium, and in a tin oxide film containing fluorine, it is expressed as the ratio of the number of fluorine atoms to one atom of tin. In addition, in the case of an oxide of an alloy of indium and tin containing fluorine, the sum of the atomic ratios of indium and tin is one atom, and it is expressed as the ratio of the number of fluorine atoms to one atom. .

The details of the present invention will be explained below with reference to the drawings.

Figure 1 shows an example of the transparent gas barrier film of the present invention, where ■ is a plastic film and 2 is the film 1.
It is a gas barrier layer laminated on one side of the metal oxide layer, which is a metal oxide layer made of a single metal of In or Sn or an alloy thereof, and contains a specific amount of fluorine atoms.

The one in Figure 1 shows the basic configuration of the transparent gas barrier film of the present invention, and if necessary, a heat-sealable thermoplastic resin adhesive layer may be laminated, or the basic configuration shown in Figure 1 may be laminated in multiple layers. It is possible to use it. Further, gas barrier layers can also be provided on both sides of the substrate.

Figure 2 shows a heat-sealable thermoplastic adhesive layer 3 on top of the gas barrier layer 2 of the transparent gas barrier film in Figure 1.
FIG. 3 shows an example in which the basic structure shown in FIG. 1 is laminated with an organic thin film layer 4 interposed therebetween, and an adhesive layer 3 is formed on the end surface.

Figure 4 shows an example of an electroluminescent device using the transparent gas barrier film of the present invention. The electrode layer 6 is formed by vacuum-depositing a high-permittivity powder such as barium titanate or strontium titanate together with a solvent such as dimethylformamide and a high-permittivity powder such as cyanoethyl cellulose, sucrose, glycerol pullulan, or glycerol sucrose. A high dielectric constant layer is obtained by screen printing a paint dispersed in a dielectric constant binder onto the electrode layer and drying it. 7 is a layer containing a phosphor such as zinc sulfide, zinc selenide, or cadmium sulfide doped with copper, aluminum, manganese, etc. , a luminescent layer in which a paint dispersed in a high dielectric constant binder such as cyanoethyl cellulose or sucrose along with a solvent is screen printed on the high dielectric constant layer and dried. , a transparent electrode layer made of indium oxide-tin oxide composite oxide, etc., and a transparent conductive surface is laminated with a light emitting layer by a method such as hot pressing. 9 is a transparent gas barrier film of the present invention, in which the heat-sealable thermoplastic adhesive layer sides of the transparent gas barrier film are opposed to each other, and as shown in the figure, an electroluminescent film consisting of an electrode layer, a high dielectric constant layer, a light emitting layer, and a transparent electrode layer is formed. It is laminated with adhesive to seal the entire body. Reference numeral 10 denotes an electrode drawn out from the electrode layer 5 and the transparent conductive surface 8.

The interior of the electroluminescent element may contain a water-absorbing layer such as a polyamide film, if necessary.

The substrate made of plastic film as used in the present invention is:
The following representative organic polymers are melted or melt-extruded and stretched in the longitudinal direction and/or width direction as necessary. Examples of organic polymers include polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polyethylene-2,6-naphthalate, polyamides such as nylon 6 and nylon 12, vinyl chloride, vinylidene chloride, polyvinyl alcohol, aromatic polyamides, and polyamides. imide, polyimide,
Examples include polyetherimide, polysulfone, polyethersulfone, polyetheretherketone, polyarylate, polyphenylene sulfide, polyphenylene oxide, tetrafluoroethylene, trifluoroethylene monochloride, and fluorinated ethylene propylene copolymer. Moreover, these copolymers or copolymers with other organic polymers may be used, or they may contain other organic polymers. Additives known to these organic polymers,
For example, antistatic agents, ultraviolet absorbers, plasticizers, lubricants, colorants, etc. may be added.

The light transmittance of the plastic film of the present invention is important for the visibility and aesthetics of the package contents, and the total light transmittance in white light is at least 60% or more, preferably 80% or more.
% or more is desirable.

Known additives such as colorants are preferably added within this range. Prior to sputtering the fluorine-containing metal oxide layer, the plastic film of the present invention is subjected to surface treatments such as corona discharge treatment, plasma treatment, glow discharge treatment, reverse sputtering treatment, and surface roughening treatment, as well as known anchor coating treatment. It may be applied, or it may be printed.

The thickness of the plastic film of the present invention is not particularly limited, but a range of 3 to 400 μm is desirable from the viewpoint of suitability as a packaging material. In terms of mechanical properties and flexibility, the thickness is more preferably in the range of 25 to 200 μm.

The gas barrier layer in the present invention is a fluorine-containing metal oxide of a single metal of In or Sn or an alloy thereof, and also includes a mixed oxide of In and Sn containing fluorine or a composite oxide film.

It is important that these metal oxide layers containing fluorine have 0.05 to 1 atom of fluorine bonded to 1 atom of metal, and more preferably 0.05 to 1 atom of fluorine is bonded to 1 atom of metal.
．． It is preferable that 2 to 0.8 atoms are bonded. When the amount of fluorine is less than 0.05 atoms per metal atom, electrical conductivity is exhibited, and for example, when used in a moisture-proof film for an electroluminescent device as shown in Fig. There is a risk of short circuit. Further, if more than one atom of fluorine is contained per one atom of the metal, the adhesion between the substrate and the metal oxide layer containing fluorine deteriorates, and gas barrier properties are impaired, which is not preferable.

The metal oxide layer contains elements other than the metal atoms mentioned above, such as Ti, Zr, Zn, Fe, Sb, and C.

Mo, W, Cu, AI, St, Ni, etc. may be contained in small amounts.

The thickness of the fluorine-containing metal oxide layer is preferably in the range of 30 to 300 layers in terms of moisture resistance and flexibility. These metal oxide layers containing fluorine exhibit gas barrier properties when the thickness is 30 Å or more, and sufficient gas barrier properties are obtained when the film thickness is 50 Å or more. Further, even if the film thickness is increased more than necessary, the gas barrier performance will not be improved in the case of these metal oxide layers containing fluorine, and if the thickness exceeds 300, the transparency and flexibility will deteriorate. More preferably, the number is 70 to 250 people.

Furthermore, the transparent gas barrier film of the present invention on which a gas barrier layer is formed preferably has a surface resistance value of 1×1×10 7 Ω/□ or more. Short circuit between the part and the extraction electrode can be reliably prevented.

In the present invention, the metal oxide in the gas barrier layer is
Containing 0.05 to 1 atom of fluorine per atom is effective in increasing the surface electrical resistance value without impairing gas barrier properties.

Further, when two or more fluorine-containing metal oxide layers are laminated on the plastic film, gas barrier properties are further improved. At this time, it is preferable that the respective fluorine-containing metal oxide layers are separated by an organic thin film layer.

For this reason, after forming a fluorine-containing metal oxide layer on a plastic film, an organic thin film layer is formed on this fluorine-containing metal oxide layer, and another -m fluorine-containing metal layer is formed on this organic thin film. It is desirable to use a method of forming an oxide layer.

Examples of resins used for the organic thin film layer include polyester resins, acrylic resins, epoxy resins, vinyl resins, melamine resins, urethane resins, ionomers, and polycarbonates.

The thickness of the organic thin film layer is preferably in the range of 0.1 to 10 μm, more preferably 0.3 to 2 μm.

If necessary, a thermoplastic adhesive layer is laminated on one side of the transparent gas barrier film. The thermoplastic adhesive layer may be formed on the plastic film side or the metal oxide layer side, but is preferably formed on the metal oxide layer side.

The thermoplastic adhesive layer referred to in the present invention refers to a polymer layer that can be bonded by heating and pressure, and typical examples thereof include the following.

Polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymers, polyesters, polyamides, ionomers, ethylene vinyl acetate copolymers, acrylic resins such as acrylic esters and methacrylic esters, polyvinyl acetals, phenols, modified epoxy resins, etc. , copolymers and mixtures thereof.

Among these, polyolefins, polyesters, polyamides, ionomers, and ethylene vinyl acetate copolymers are preferred.

The thickness of the heat-sealable thermoplastic adhesive layer is preferably in the range of 10 to 200 μm, and 30 to 10 μm in terms of adhesive strength.
0 μm is more preferable.

Methods for laminating a thermoplastic adhesive layer on one side of a transparent gas barrier film include a method in which the components of the thermoplastic adhesive layer are dissolved in an organic solvent and coated, a method in which the components of the thermoplastic adhesive layer are melted and extrusion laminated, Alternatively, a known method may be employed, such as a method in which a sheet of a thermoplastic adhesive layer is prepared in advance and the sheets are adhesively laminated by dry lamination or the like.

The heat-sealing temperature of the thermoplastic adhesive layer can be appropriately selected depending on the characteristics of the thermoplastic adhesive layer used, but it is preferable that the thermoplastic adhesive layer can be heat-sealed at a temperature of 80°C to 180°C.

The gas barrier layer of the present invention can be formed by vacuum thin film forming methods such as so-called vacuum evaporation and sputtering, but in order to fully exhibit the moisture-proofing effect, it is preferably formed by sputtering.

Sputtering in the present invention refers to direct current two-pole sputtering,
All known sputtering methods are included, such as high frequency bipolar sputtering, DC magnetron sputtering, and high frequency magnetron sputtering. It also includes so-called reactive sputtering, in which a reactive gas such as oxygen is introduced during sputtering.

In particular, in the case of the present invention using a plastic film as a substrate, a metal target of In or Sn or an alloy thereof is used, and a mixed gas consisting of argon gas, oxygen gas, fluoroalkane gas, etc. is heated in a vacuum chamber. It is preferable to perform so-called reactive sputtering, which is carried out by introducing the
Reactive high frequency magnetron sputtering is most preferred in terms of uniformity of the metal oxide layer and productivity.

The pressure in the vacuum apparatus during reactive sputtering greatly affects the transparency and gas barrier properties of the metal oxide layer, and is preferably 8 x 10" to 8 x 10'3 torr, more preferably 2 x 10'4 ~5×10″3 tall,
Most preferably, a range of 5 x 10'' to 1 x 10-3 Torr is desired.

The gas composition used during reactive sputtering is appropriately selected depending on the target material used and the input power.

When using argon, oxygen and fluoroalkane gases as a mixed gas, the ratio of oxygen to argon is 1.
The range is preferably 50% by volume, and more preferably 20% to 50% by volume in order to improve gas barrier properties. The ratio of fluoroalkane gas to the mixed gas of argon and oxygen is 1
The range is preferably 30% by volume, and more preferably 5% to 30% by volume in order to obtain high resistance.

Although the fluoroalkane gas is not particularly limited, C2F6, C3FB, C4F can be used to improve transparency.
Perfluoroalkane such as 8, CH2F2, C2H
It is preferable to use fluoroalkanes such as 4F2, and among them, perfluoroalkane such as 02F6.03FB and C4F8 are more preferable.

The transparent gas barrier film of the present invention can be widely used as packaging for electronic components that dislike moisture, food packaging to prevent moisture and oxidation, pharmaceutical packaging, etc. Among these, it is useful as a moisture-proof film for electronic components such as electroluminescent devices.

[Effects of the Invention] Since the transparent gas barrier film of the present invention is constructed as described above, it has the following excellent effects.

(1) Due to its high resistance, there is no risk of short circuit with the extraction electrode when used in a light emitting device or the like.

■ Excellent gas barrier properties against gases such as water vapor and oxygen with few pinholes.

(3) Excellent flexibility.

(4) Excellent moisture resistance at high temperatures.

(5) Excellent transparency.

(6) Can be made into a thin film.

[Example] Examples will be described below.

The following method was used to measure the characteristics in the present invention.

(a) Light transmittance spectrophotometer (Hitachi ■, self-recording spectrophotometer type 323)
The spectral light transmittance was measured, and the transmittance at a wavelength of 550 nm was defined as the light transmittance.

(b) 1 from the transparent gas barrier film with the structure shown in moisture permeability diagram 2
Two 0 cm square pieces were cut out and used with a heat sealer to form a bag with internal dimensions of 7 cm x 7 cm.

This bag was filled with 5 to 10 g of granular dry silica gel. This bag was placed in a constant temperature and humidity chamber at 40°C and 90% RH, and the weight W of the entire bag was measured after 24 hours.

(g) and the weight W1 after 96 hours were measured, and from the following formula, 40
Moisture permeability in °C was calculated.

(WI WO) / (3X 0.072X 2)
Unit: [g/rrf・24hrl (c) Pinhole test A transparent gas barrier film having the configuration shown in Figure 2 was
Two sheets measuring cm x 6 cm were cut out, and between these two sheets, a clean plastic film of 8 cm x 4 cm on which vacuum-deposited copper had been vacuum-deposited was bonded under heat using a laminator, and sealed.

This sample was left in a desiccator filled with hydrogen sulfide gas for 72 hours, and the number of corrosion points per 10 m2 of the surface of the copper vapor-deposited film sealed inside two transparent gas barrier films was defined as the number of pinholes.

(d) Surface electrical resistance value Surface electrical resistance measuring device (M. manufactured by Mitsubishi Yuka Co., Ltd.)

del HT-210) was used to measure the surface electrical resistance value of the fluorine-containing metal oxide layer.

(e) Fluorine Content Measuring Method The atomic ratio of indium, tin and fluorine was measured using an X-ray molecular spectrometer rEscALAB5J manufactured by VG 5 Scientific.

Examples 1-5. As a comparative example, an axially stretched polyethylene terephthalate film (thickness 50
μm) into a roll with a width of 300 mm and a length of 500 m,
It was attached to a winding type DC magnetron sputtering device. An indium metal plate (purity 99.9%) is used as the target, and after the vacuum container is evacuated to below 5 x 10" Torr, argon/oxygen mixed gas (mixing ratio 70:3) is used.
0 volume %) at 0.221/min and perfluoroalkane gas represented by C2F6 at 0,051/min,
Pressure 6X10'! - A gas barrier layer was formed as a layer. The input power was set to 2KW, and the film thickness of the indium oxide layer containing fluorine was adjusted to 50% depending on the film speed.
0 people, 250 people, 100 people.

We created one for 70 people and one for 50 people.

Next, a polyester adhesive (
"Atocoat" AD-578 (manufactured by Toyo Morton Co., Ltd.) was coated to a dry thickness of about 3 μm, and an unstretched polypropylene film (50 μm thick) was adhered by dry lamination.

The thickness of indium oxide containing fluorine is 500, 25
Examples 1.2.3.4 and 5 are those of 0 person, 100A, 70A, and 50 people, respectively.

The ratio of fluorine atoms to one indium atom in Examples 1 to 5 was 0.58. The measurement results are shown in Table 1.

Comparative Examples 1 to 5 In Examples 1 to 5, sputtering was performed under the same conditions as Examples 1 to 5 without mixing C2F6 gas and using only a mixed gas of argon and oxygen to produce indium oxide layers. Comparative Examples 1.2, 3.4 and 5 were obtained by dry laminating unstretched polypropylene films in the same manner as in Examples 1 to 5. The measurement results are shown in Table 1.

Examples 6 to 10 Biaxially oriented polyethylene terephthalate film (thickness 5
A composite oxide film consisting of indium oxide and tin oxide containing fluorine was formed on the substrate by reactive direct current magnetron sputtering.

The target is an alloy plate of indium and tin (composition ratio of indium and tin: 90:10% by weight, size 5 vinci x 1)
After evacuating to 5 torr or less using a 5
Sputtering was performed by introducing a perfluoroalkane gas (30% by volume) at a rate of 0.271/min and a perfluoroalkane gas represented by C3F8 at a rate of 0.051/min, and at a pressure of 8 x 10'4 Torr. With the input power constant at 2KW, the thickness of the composite oxide film made of indium oxide containing fluorine and tin oxide was adjusted to 500 and 250, respectively, depending on the film speed.

One for 100 people, one for 70 people, and one for 50A were made.

Next, a polyester adhesive (
"Atocoat" AD-578 (manufactured by Toyo Morton Co., Ltd.) was applied so that the thickness after drying was about 3 μm, and a 50 μm unstretched polypropylene film was adhered by a dry lamination method.

The thickness of the indium oxide-tin oxide composite oxide film containing fluorine is 500 mm, 250 mm, and 100 A.

Example 6.7.8 for 70 people and 50 people, respectively.
9 and 10.

The fluorine atoms in the fluorine-containing composite oxide films serving as the gas barrier layers of Examples 6 to 10 were 0.71 relative to the sum of the atomic ratios of indium and tin (1 atom), as shown in Table 1. The measurement results are shown in Table 1.

Comparative Examples 6 to 10 In Examples 6 to 10, C3FB of the introduced mixed gas
Argon/oxygen (mixing ratio 70:30) without introducing gas
Comparative Examples 6 and 7 were obtained by adhering an unstretched polypropylene film by a dry lamination method to an indium oxide-tin oxide composite oxide film obtained by sputtering under the same conditions as Examples 6 to 10. .8.9
and 10. The measurement results are shown in Table 1.

As is clear from the light transmittance, surface electrical resistance, moisture permeability, and pinhole values listed in Table 1, the transparent gas barrier films of Examples 1 to 10 that satisfy the present invention have excellent transparency and surface electrical resistance. is high.

The film also had fewer pinholes and exhibited excellent gas barrier properties. On the other hand, Comparative Examples 1 to 10 had many pinholes and had low surface electrical resistance values.

Example 11 (Preparation of electroluminescent body) A screen was placed on a transparent conductive layer of a biaxially stretched polyethylene terephthalate film (thickness: 75 μm) on one side of which a transparent conductive film of indium oxide-tin oxide and an extraction electrode of aluminum foil were formed. By printing method, cyanoethylcellulose (40 parts), copper-doped zinc sulfide powder (60 parts),
Apply a mixed solution of DMF (100 parts), dry it,
A luminescent layer of μm was formed.

A mixed solution of cyanoethyl cellulose (50 parts), barium titanate powder (50 parts), and DMF (100 parts) was applied onto this luminescent layer by screen printing and dried to form a 100 μm high dielectric constant layer. did.

Next, aluminum foil (35 μm thick) was placed on one side of the biaxially stretched polyethylene terephthalate film (50 μm thick).
The aluminum foil surface of the electrode layer laminated with the extractor electrode (μm) and the high dielectric constant layer surface were superimposed, heat-bonded at 150° C., and cut to obtain an electroluminescent body with a size of 10,100×100.

(Preparation of transparent gas barrier film) Biaxially stretched polyethylene terephthalate film (thickness 5
A fluorine-containing indium oxide film was formed on one side of the substrate with a width of 0 μm, a width of 300 m, and a length of 200 m by reactive sputtering.

For reactive sputtering, a winding type magnetron sputtering device was used, and an indium plate (thickness 5 mm, 1150x350
mm) as a target, argon/oxygen mixed gas (
Mixing ratio 70: 30% by volume) 0.221 part min and perfluoroalkane gas represented by C2F6 0.05/
/min by a gas mixer, the mixture was introduced into a vacuum chamber, the pressure was set to 6.0×10 −' Torr, and the winding speed was adjusted to obtain a fluorine-containing indium oxide film having a film thickness of 100 A. The surface resistance of the obtained fluorine-containing indium oxide film was 10 8 Ω/mouth or more.

Next, on this fluorine-containing indium oxide film, a heat seal layer made of ethylene-vinyl acetate copolymer resin and having a thickness of 50 μm was laminated by extrusion lamination to produce a transparent gas barrier film. The composition ratio of indium and fluorine in the gas barrier layer of the obtained transparent gas barrier film was 0.58 atoms of fluorine per 1 atom of indium. This transparent gas barrier film is referred to as Example 11.

(Preparation of electroluminescent device) Two of the transparent gas barrier films described above were stacked so that the heat-sealing layers were on the inside of each other, and the electroluminescent material was inserted between them and bonded at 150° C. using a hot press. An electroluminescent device was obtained.

Next, in Example 11, when producing a transparent gas barrier film, C2F6 gas was not introduced, and a mixed gas of argon and oxygen (mixing ratio 60-40% by volume) was introduced at 0.22//m
A transparent gas barrier film was produced in the same manner as in Example 11 except that the film was set to in. This transparent gas barrier film is referred to as Comparative Example 11.

The surface resistance of the fluorine-free indium oxide layer of Comparative Example 11 was 4×10 3 Ω/hole.

Five electroluminescent devices each using Example 11 and Comparative Example 11 were used.
A voltage of 400 Hz and 100 V was applied to the extraction electrode of each element to conduct a short circuit test on each of these.

Regarding Comparative Example 11, 23 out of 50 did not emit light due to short circuit, or the brightness decreased significantly. On the other hand, in Example 11, which satisfies the present invention, no short-circuit failure occurred.

[Brief explanation of drawings]

1 to 3 are schematic cross-sectional views showing one example of the transparent gas barrier film of the present invention, and FIG. 4 is a schematic cross-sectional view showing one example of an electroluminescent device using the transparent gas barrier film of the present invention. . 1 is a plastic film, 2 is a gas barrier layer, 3 is an adhesive layer, 4 is an organic thin film layer, 5 is an electrode layer, 6 is a dielectric constant layer, 7
8 is a light emitting layer, and 8 is a transparent electrode layer.

Claims (1)

[Scope of Claims] 1. A transparent gas barrier film in which a gas barrier layer is laminated on at least one side of a substrate made of a plastic film, wherein the gas barrier layer is a metal oxide layer made of In and/or Sn, and the gas barrier layer is a metal oxide layer made of In and/or Sn; A transparent gas barrier film characterized in that the oxide layer contains 0.05 to 1.0 atoms of fluorine per 1 atom of metal. 2. The transparent gas barrier film according to claim 1, which has a surface electrical resistance value of 1×10^7Ω/□ or more. 3. The transparent gas barrier film according to claim 1, wherein the metal oxide layer is formed by sputtering.