JPH02264495A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02264495A JPH02264495A JP8596989A JP8596989A JPH02264495A JP H02264495 A JPH02264495 A JP H02264495A JP 8596989 A JP8596989 A JP 8596989A JP 8596989 A JP8596989 A JP 8596989A JP H02264495 A JPH02264495 A JP H02264495A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- recognition mark
- mark
- thick film
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、導体パターンの一部をアライメントマーク
として使用した半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device using a part of a conductive pattern as an alignment mark.
第2図は従来の半導体装置の例としての厚膜基板の上面
図であり、図にお込て+llは厚膜基板。FIG. 2 is a top view of a thick film substrate as an example of a conventional semiconductor device, and +ll in the figure indicates a thick film substrate.
21は厚膜基板…に形成した導体パターン、 131は
認識マークである。21 is a conductive pattern formed on a thick film substrate, and 131 is a recognition mark.
次に動作VCついて説明する。厚膜基板山上に。Next, the operational VC will be explained. On top of the thick film substrate.
半導体素子やその他部品を塔載する時、2ポイントの認
識マーク(3:に対し部品の〃補正をしている。When mounting semiconductor devices and other parts, the parts are corrected for the 2-point recognition mark (3).
従来の半導体装置は1以上のように構成されているので
、厚膜基板上の有効スペース1に認識マーク;31によ
り制限され、小型化の弊害となっていた。Since a conventional semiconductor device has one or more configurations, the effective space 1 on the thick film substrate is limited by the recognition mark 31, which has been an impediment to miniaturization.
この発明は上記のような問題点を解決するためになされ
たもので、導体パターンの一部に認識マークを設け、小
型化された半導体装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a recognition mark on a part of a conductor pattern to obtain a miniaturized semiconductor device.
この発明〆係る半導体装置は半導体基板上の導体パター
ンの一部ヤ使用して、認識マークとしたものである。A semiconductor device according to the present invention uses a portion of a conductor pattern on a semiconductor substrate as a recognition mark.
この発明VCおける半導体装置のAi!!識マークは従
来に比べ半導体基板上の対角の位11Kg織マークを形
成し易くなるため、小型化とともに塔械楕度を向上する
働きもする。Ai! of the semiconductor device in this invention VC! ! The identification mark is easier to form as a diagonal 11 kg weave mark on a semiconductor substrate than in the past, so it also works to reduce the size and improve the ellipticity of the structure.
〔実施例)
第1図は、この発明の一実施例である半導体!flの上
面図である。[Example] Figure 1 shows a semiconductor that is an example of this invention! It is a top view of fl.
図において田は厚膜基板、(21は導体・(ターン。In the figure, 21 is a thick film substrate, and 21 is a conductor (turn).
4:は認識マークである。4: is a recognition mark.
認識マーク+41tllj、4体パターン+21の一部
へ形収し九ものである。The recognition mark +41tllj is a part of the 4-body pattern +21.
久に動作YCついて説明する。I will explain the operation YC soon.
認識マーク蒐41の部分の導体パターン121の間隔は
、認識マーク+41の部分がRGOpm、導体パターン
(!1とのスペースが200#mなので、最小8SOμ
mとな・る。The distance between the conductor patterns 121 in the part of the recognition mark 41 is RGOpm in the part of the recognition mark +41, and the space with the conductor pattern (!1) is 200#m, so the minimum is 8SOμ.
m and na・ru.
一方、第2図に示す従来の認1fl−t−りIl+の位
置では導体パターン1對の間隔は最小?005mを・〃
する。On the other hand, in the conventional recognition 1fl-t-Il+ position shown in FIG. 2, is the distance between each conductor pattern the minimum? 005m.
do.
以上により、この発明では認識マーク1410部分のス
ペースが少なくてすむため厚膜基板中の小型化ができる
。As described above, in the present invention, the space required for the recognition mark 1410 portion can be reduced, so that the size of the thick film substrate can be reduced.
〔発明の効果〕
以上のように、この発明によれば半導体装置の半導体基
板が小型化でき、塔載位置精度の向上が行なえる。[Effects of the Invention] As described above, according to the present invention, the semiconductor substrate of a semiconductor device can be downsized and the mounting position accuracy can be improved.
第1図汀この発明の一実施例における半導体装置の、上
面図、第2図に従来の半導体装置を示す上面図である。
図において、・41は厚膜基板、12)は導体パターン
、(41はrhgmマークである。
なお1図中、同一符号は向−ま九は相当部分?示す。FIG. 1 is a top view of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a top view of a conventional semiconductor device. In the figure, 41 is a thick film substrate, 12 is a conductor pattern, and 41 is a rhgm mark. In the figure, the same reference numerals indicate corresponding parts.
Claims (1)
記半導体基板の導体パターンの一部に形成することで半
導体基板を小型化したことを特徴とする半導体装置。1. A semiconductor device, wherein a semiconductor substrate is miniaturized by forming a recognition mark for mounting components on a part of a conductive pattern of the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8596989A JPH02264495A (en) | 1989-04-05 | 1989-04-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8596989A JPH02264495A (en) | 1989-04-05 | 1989-04-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02264495A true JPH02264495A (en) | 1990-10-29 |
Family
ID=13873557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8596989A Pending JPH02264495A (en) | 1989-04-05 | 1989-04-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02264495A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026823A (en) * | 2007-07-17 | 2009-02-05 | Toshiba Corp | Printed wiring board, and electronic device |
JP2009206367A (en) * | 2008-02-28 | 2009-09-10 | Hitachi Ltd | Wiring board |
-
1989
- 1989-04-05 JP JP8596989A patent/JPH02264495A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009026823A (en) * | 2007-07-17 | 2009-02-05 | Toshiba Corp | Printed wiring board, and electronic device |
JP2009206367A (en) * | 2008-02-28 | 2009-09-10 | Hitachi Ltd | Wiring board |
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