JPH02260438A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02260438A JPH02260438A JP8091389A JP8091389A JPH02260438A JP H02260438 A JPH02260438 A JP H02260438A JP 8091389 A JP8091389 A JP 8091389A JP 8091389 A JP8091389 A JP 8091389A JP H02260438 A JPH02260438 A JP H02260438A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor
- bag
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000003822 epoxy resin Substances 0.000 claims abstract description 52
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 11
- 238000001721 transfer moulding Methods 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims description 16
- 239000000843 powder Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- 239000011342 resin composition Substances 0.000 abstract description 2
- 239000010419 fine particle Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device.
トランジスタ、ＩＣ，、ＬＳＩ等の半導体素子をエポキ
シ樹脂組成物を用いて樹脂封止する場合、一般にトラン
スファーモールド成形法が用いられている。上記トラン
スファーモールド成形法は、通常、タブレット状に成形
されたエポキシ樹脂組成物が用いられ、このタブレット
状品を８０℃前後にプレヒート（予備加熱）する。そし
て、軟化したタブレットをトランスファー成形機のポッ
トに装填してモールド成形し半導体装置を製造するとい
うものである。When semiconductor elements such as transistors, ICs, and LSIs are encapsulated with an epoxy resin composition, a transfer molding method is generally used. In the transfer molding method, an epoxy resin composition molded into a tablet is usually used, and this tablet-like product is preheated to around 80°C. The softened tablet is then loaded into a pot of a transfer molding machine and molded to produce a semiconductor device.
しかしながら、上記タブレット品は、輸送中に割れたり
または一部欠けたりする場合があり、このような状態の
タブレット品をポットに装填しモールド成形すると、重
量不足という問題が生じ、その結果、流動化したエポキ
シ樹脂組成物が成形金型全体にゆきわたらす封止樹脂に
未充填部分が生じるという問題を有している。また、上
記のようにタブレット品の割れ、欠けにより粉塵の散乱
が発生し、作業環境上の問題も有している。However, the above-mentioned tablet products may break or become partially chipped during transportation, and when such tablet products are loaded into a pot and molded, there is a problem of insufficient weight, resulting in fluidization. There is a problem in that the epoxy resin composition spreads over the entire molding die, resulting in unfilled areas in the sealing resin. Furthermore, as mentioned above, cracks and chips in the tablet product cause scattering of dust, which poses problems in the working environment.
この発明は、このような事情に鑑みなされたもので、作
業環境が向上し、かつエポキシ樹脂組成物の重量不足に
起因する封止樹脂に未充填部分が生じない半導体装置の
製造方法の提供をその目的とする。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a semiconductor device that improves the working environment and prevents unfilled portions from forming in the sealing resin due to insufficient weight of the epoxy resin composition. That purpose.
［問題点を解決するための手段］
上記の目的を達成するため、この発明の半導体装置装置
の製造方法は、トランスファーモールド成形によって、
半導体素子を樹脂封止することにより半導体装置を製造
する方法であって、半導体封止用エポキシ樹脂組成物を
、融点が１９０″Ｃ以上の耐熱性を有する袋体に詰めた
ものを用いるという構成をとる。ここで上記袋体とは、
通常の袋のみならず、エポキシ樹脂組成物を袋状に包み
込むことのできるようなフィルムやシートをも含む趣旨
である。[Means for Solving the Problems] In order to achieve the above object, the method for manufacturing a semiconductor device of the present invention includes the steps of:
A method for manufacturing a semiconductor device by resin-sealing a semiconductor element, the method comprising using an epoxy resin composition for semiconductor encapsulation packed in a heat-resistant bag with a melting point of 190"C or higher. Here, the above bag body is
The term is intended to include not only ordinary bags but also films and sheets that can wrap an epoxy resin composition in a bag shape.
（作用〕
すなわち、この発明は、トランスファーモールド成形す
るにあたって、従来のように半導体封止用エポキシ樹脂
組成物のタブレットをそのまま用いるのではなく３、エ
ポキシ樹脂組成物を上記特徴を有する袋体に詰めたもの
を用いてトランスファーモールド成形する。そのため、
袋体の緩衝作用により、輸送中におけるタブレットの割
れ、欠けの発生を防止することができる。仮に、割れ、
欠けが生じてもそれは袋体内で生じるため、袋体内のエ
ポキシ樹脂組成物の重量に変化は生じない。(Function) In other words, in transfer molding, the present invention does not use a tablet of an epoxy resin composition for semiconductor encapsulation as it is as in the conventional method, but instead packs the epoxy resin composition into a bag having the above characteristics. Transfer molding is performed using
The cushioning effect of the bag can prevent the tablet from cracking or chipping during transportation. Even if it cracks,
Even if chipping occurs, it occurs within the bag, so there is no change in the weight of the epoxy resin composition inside the bag.
したがって、エポキシ樹脂組成物の重量不足による不都
合を生じない。しかも、輸送中に発生する微粉末が作業
場に粉塵として飛散することがないため、衛生的な作業
環境を維持することができる。Therefore, no inconvenience occurs due to insufficient weight of the epoxy resin composition. Moreover, since the fine powder generated during transportation is not scattered as dust in the workplace, a sanitary working environment can be maintained.
この発明は、半導体封止用エポキシ樹脂組成物を特殊な
袋体に詰め、これをそのままトランスファーモ・−ルド
成形に供することによって半導体素子の樹脂封止を行う
ものである。In this invention, an epoxy resin composition for semiconductor encapsulation is packed into a special bag, and the bag is directly subjected to transfer molding, thereby encapsulating a semiconductor element with the resin.
上記エポキシ樹脂組成物を詰める袋体は、エポキシ樹脂
組成物を包み込むことができればよく、シート状（フィ
ルム状）であっても、袋状に成形されたものであっても
よい。ただし、袋体の材質は、エポキシ樹脂組成物を詰
めた状態で予備加熱、成形できるよう、エポキシ樹脂組
成物の通常の成形温度である１７０〜１８０″Ｃを上回
る１９０℃以上の融点を有していることが必要であり、
モールド成形時等の熱で、中身のエポキシ樹脂組成物と
融着しないことが必要である。なお、エポキシ樹脂組成
物と融着しないということは、袋体の素材自身が上記組
成物に対して耐熱融着性を備えていることによってもよ
く、また袋体の内部表面にコーティング等の処理を施し
て熱融着しないようにしてもよい。The bag in which the epoxy resin composition is packed needs only to be able to enclose the epoxy resin composition, and may be in the form of a sheet (film) or a bag. However, the material of the bag has a melting point of 190"C or higher, which is higher than the normal molding temperature of epoxy resin compositions of 170 to 180"C, so that it can be preheated and molded while filled with the epoxy resin composition. It is necessary that
It is necessary that the material does not fuse with the epoxy resin composition inside due to heat generated during molding. In addition, the fact that it does not fuse with the epoxy resin composition may be due to the fact that the material of the bag itself has heat-resistant fusion properties to the above-mentioned composition, or the inner surface of the bag may be coated or otherwise treated. may be applied to prevent heat fusion.
また、この発明に用いられる上記半導体封止用エポキシ
樹脂組成物としては、従来公知の組成物であるモールド
用成形材料があげられる。例えば、エポキシ樹脂、フェ
ノール樹脂等の硬化剤、無機質充填剤およびその他の添
加剤を配合し溶融混練した液状物（例えば、発光ダイオ
ード（ＬＥＤ）封止用透明樹脂組成物）、そしてこれを
冷却固化し粉砕することにより得られる粉末状物、さら
にこの粉末状物をプレヒートしたものがあげられる。そ
して、上記プレヒートしたものをモールド成形に用いる
と、加熱により気泡を有していないため、封止樹脂にボ
イドを生じることがない。Further, the epoxy resin composition for semiconductor encapsulation used in the present invention includes a conventionally known composition for molding. For example, a liquid material (for example, a transparent resin composition for encapsulating a light emitting diode (LED)) is prepared by blending a curing agent such as an epoxy resin or a phenolic resin, an inorganic filler, and other additives, and then solidifying it by cooling. Examples include a powder obtained by grinding and pulverizing the powder, and a product obtained by preheating this powder. When the preheated material is used for molding, no voids are generated in the sealing resin because it does not contain air bubbles due to heating.
この発明の半導体装置の製造方法は、具体的には例えば
つぎのようにして行われる。まず、第１図に示すように
、袋体１の開口部を上方に開いた状態で、有底筒状のガ
イド容器３の内側に装着し、袋体１内に半導体対土用エ
ポキシ樹脂組成物２を詰める。そして、第２図に示すよ
うに、半導体封止用エポキシ樹脂組成物２を詰めた袋体
１の開口部を縛る等して閉じる。つぎに、上記状態のま
まプレヒートを行ったのち、第３図に示すように、袋詰
めした半導体封止用エポキシ樹脂組成物２をボット５に
そのまま装填し、プランジャ６で矢印方向に押圧し袋体
１の開口部からまたは袋体１を破壊して半導体封止用エ
ポキシ樹脂組成物２を押し出し、てトランスファーモー
ルド成形する。そして、一連の成形作業の完了後、ポッ
ト５内に残った袋体ｌを取り出すことにより半導体装置
を製造することができる。Specifically, the method for manufacturing a semiconductor device according to the present invention is performed as follows, for example. First, as shown in FIG. 1, the bag 1 is placed inside a bottomed cylindrical guide container 3 with its opening opened upward, and the epoxy resin for semiconductors is placed inside the bag 1. Pack item 2. Then, as shown in FIG. 2, the opening of the bag 1 filled with the epoxy resin composition 2 for semiconductor encapsulation is closed by tying or the like. Next, after performing preheating in the above state, as shown in FIG. The epoxy resin composition 2 for semiconductor sealing is extruded from the opening of the body 1 or by breaking the bag body 1, and then transfer molded. After completing a series of molding operations, the bag l remaining in the pot 5 is taken out to manufacture a semiconductor device.
このように、この発明の半導体装置の製造方法によれば
、半導体対土用エポキシ樹脂組成物をタブレット状に打
錠したもの、粉末状物、場合によ・つては液状物を袋体
に詰めて輸送しそのままトランスファー成形に用いるこ
とができるため、輸送途中に半導体封止用エポキシ樹脂
組成物の重量が減少したりすることがない。したがって
、エポキシ樹脂組成物の重量不足に起因する不都合を生
じない。また、エポキシ樹脂組成物を粉末状または液状
のものであってもプレヒートできるため、封止樹脂内の
ボイドの発生を防止することができる。しかも、例えば
粉末状もしくはタブレット状の半導体封止用エポキシ樹
脂組成物を用いる場合、袋体に詰めて輸送するため、エ
ポキシ樹脂組成物の微粉末が粉塵として飛散せず、良好
な作業環境を実現することができる。As described above, according to the method for manufacturing a semiconductor device of the present invention, the epoxy resin composition for use with semiconductors is compressed into tablets, powdered material, or in some cases, liquid material is packed into a bag. Since the epoxy resin composition for semiconductor encapsulation can be transported and used for transfer molding as it is, the weight of the epoxy resin composition for semiconductor encapsulation does not decrease during transportation. Therefore, there is no problem caused by insufficient weight of the epoxy resin composition. Moreover, since the epoxy resin composition can be preheated even if it is in powder or liquid form, it is possible to prevent the generation of voids in the sealing resin. Furthermore, when using an epoxy resin composition for semiconductor encapsulation in powder or tablet form, for example, the fine powder of the epoxy resin composition does not scatter as dust because it is packed in a bag and transported, creating a good working environment. can do.
以上のように、この発明の半導体装置の製造方法では、
トランスファーモールド成形において、半導体封止用エ
ポキシ樹脂組成物を袋詰めしたものを用いて半導体装置
の製造を行うため、半導体封止用エポキシ樹脂組成物の
重量不足に起因する不都合を生じない。しかも、半導体
封止用エポキシ樹脂組成物の輸送途中、エポキシ樹脂組
成物の割れ、欠けにより発生する微粉末が作業場に粉塵
として飛散することがないため、衛生的な作業環境を維
持することができる。As described above, in the method of manufacturing a semiconductor device of the present invention,
In transfer molding, since a semiconductor device is manufactured using a packaged epoxy resin composition for semiconductor encapsulation, there is no problem caused by insufficient weight of the epoxy resin composition for semiconductor encapsulation. In addition, a sanitary working environment can be maintained because the fine powder generated by cracks and chips in the epoxy resin composition during transportation of the epoxy resin composition for semiconductor encapsulation will not be scattered as dust in the workplace. .
つぎに、実施例について比較例と併せて説明する。Next, examples will be described together with comparative examples.
まず、実施例に先立って、下記に示す原料を用いて半導
体封止用エポキシ樹脂組成物を作製した。First, prior to Examples, an epoxy resin composition for semiconductor encapsulation was prepared using the raw materials shown below.
（半導体封止用エポキシ樹脂組成物の作製）下記に示す
原料を用い、従来公知の方法により、各原料を配合し溶
融混練して冷却固化して後粉砕し粉末状の半導体封止用
エポキシ樹脂組成物を作製した。(Preparation of epoxy resin composition for semiconductor encapsulation) Using the raw materials shown below, each raw material is blended by a conventionally known method, melted and kneaded, cooled to solidify, and then ground to obtain a powdered epoxy resin for semiconductor encapsulation. A composition was prepared.
くエポキシ樹脂組成物の原料〉
エポキシ樹脂（０−クレゾールノボラック型）１００部
３５部
６５部
２０部
４５０部
２部
３部
５部
ブロム化エポキシ樹脂
フェノールノボラック樹脂
三酸化アンチモン
溶融シリカ
シランカップリング剤
ＯＰワックス（ヘキスト社製）
カーボンブラック
硬化促進剤（２−フェニルイミダゾール）０．７部
〔実施例〕
第１図に示すように、ガイド容器であるガラス製容器３
の内側に耐熱性ラップ（ポリエチレンテレフタレート製
）１の開口部を上方に開いた状態で装着し、この耐熱性
ラップ１内に、上記のようにして得られた粉末状のエポ
キシ樹脂組成物２（１００ｇ）を詰めた。そして、上記
状態のまま７５℃でプレヒートを行ったのち、第２図に
示すように、粉末状のエポキシ樹脂組成物２を詰めた耐
熱性ラップ１の開口部を縛って閉じ、所定のプレヒート
を行った。つぎに、上記粉末状のエポキシ樹脂組成物２
が詰められた耐熱性ラップｌを、第３図に示すように、
トランスファー成形機４のボット５に装填し、プランジ
ャ６で矢印方向に押圧して１６個取り４２ビンＤＩＰの
トランスファーモールド用金型を用いて半導体装置を製
造した。Raw materials for epoxy resin composition> Epoxy resin (0-cresol novolac type) 100 parts 35 parts 65 parts 20 parts 450 parts 2 parts 3 parts 5 parts Brominated epoxy resin Phenol novolac resin Antimony trioxide fused silica Silane coupling agent OP Wax (manufactured by Hoechst) Carbon black curing accelerator (2-phenylimidazole) 0.7 parts [Example] As shown in FIG. 1, a glass container 3 serving as a guide container
A heat-resistant wrap (made of polyethylene terephthalate) 1 is attached to the inside of the heat-resistant wrap (made of polyethylene terephthalate) with the opening opened upward, and inside this heat-resistant wrap 1, the powdered epoxy resin composition 2 obtained as described above ( 100g). Then, after preheating at 75°C in the above state, as shown in FIG. went. Next, the powdered epoxy resin composition 2
As shown in Figure 3, the heat-resistant wrap l filled with
It was loaded into the bot 5 of the transfer molding machine 4 and pressed in the direction of the arrow with the plunger 6 to manufacture a semiconductor device using a 16-piece, 42-bin DIP transfer mold.
なお、上記モールド成形は成形温度１７５℃、注入時間
２０秒、硬化時間１２０秒、成形圧カフ０±５ ｋｇ／
ｃｄの条件で行った。The above molding was performed at a molding temperature of 175°C, an injection time of 20 seconds, a curing time of 120 seconds, and a molding pressure of 0±5 kg/cuff.
It was conducted under CD conditions.
粉末状のエポキシ樹脂組成物２を詰めた耐熱性ラップ１
の代わりに、上記粉末状のエポキシ樹脂組成物を直径４
８ｍｍのタブレット（重さ１００ｇ）に打錠したものを
用いてこれを７５℃にプレヒートシた。それ以外は、実
施例と同様にして半導体装置を得た。Heat-resistant wrap 1 filled with powdered epoxy resin composition 2
Instead, the powdered epoxy resin composition is
This was compressed into 8 mm tablets (weight 100 g) and preheated to 75°C. Other than that, a semiconductor device was obtained in the same manner as in the example.
上記のようにして得られた実施測高および比較測高を軟
Ｘ線撮影し、軟Ｘ線写真より１部以上の大きさのボイド
を測定した。また、モールド成形時の温度１７５℃にお
けるエポキシ樹脂組成物のスパイラルフロー（以下ｒｓ
ＦＪと略称す）も同時に測定した。その結果を併せて下
記の表に示した。The actual height measurements and comparative height measurements obtained as described above were photographed using soft X-rays, and voids larger than 1 part were measured from the soft X-ray photographs. In addition, spiral flow (hereinafter referred to as rs) of the epoxy resin composition at a temperature of 175°C during molding
FJ) was also measured at the same time. The results are also shown in the table below.
上記の表の結果から、実施測高は比較測高に比べても同
等のボイド数であり、流動性も変化がなかったこのこと
から、この発明の半導体装置の製造方法により得られる
半導体装置は、従来の方法と同等の性能を示しており、
作業性に優れていることがわかる。From the results in the table above, the actual height measurement had the same number of voids as the comparative height measurement, and there was no change in fluidity. Therefore, the semiconductor device obtained by the semiconductor device manufacturing method of the present invention is , shows the same performance as the conventional method,
It can be seen that the workability is excellent.
第１図および第２図は袋体に半導体封止用エポキシ樹脂
組成物を詰める作業を説明する状態図、第３図はこの発
明の詳細な説明する状態図である。
１・・・耐熱性ラップ ２・・・半導体封止用エポキシ
樹脂組成物
特許出願人 日東電工株式会社
代理人 弁理士 西 藤 征 彦1 and 2 are state diagrams illustrating the operation of filling a bag with an epoxy resin composition for encapsulating a semiconductor, and FIG. 3 is a state diagram illustrating the present invention in detail. 1...Heat-resistant wrap 2...Epoxy resin composition for semiconductor encapsulation Patent applicant: Nitto Denko Corporation Representative, Patent attorney Yukihiko Nishifuji
Claims (1)
子を樹脂封止することにより半導体装置を製造する方法
であつて、半導体封止用エポキシ樹脂組成物を、融点が
１９０℃以上の耐熱性を有する袋体に詰めたものを用い
ることを特徴とする半導体装置の製造方法。(1) A method for manufacturing a semiconductor device by resin-sealing a semiconductor element by transfer molding, wherein an epoxy resin composition for semiconductor encapsulation is placed in a heat-resistant bag with a melting point of 190°C or higher. A method for manufacturing a semiconductor device, characterized in that it uses something stuffed into the body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8091389A JPH02260438A (en) | 1989-03-30 | 1989-03-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8091389A JPH02260438A (en) | 1989-03-30 | 1989-03-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02260438A true JPH02260438A (en) | 1990-10-23 |
Family
ID=13731631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8091389A Pending JPH02260438A (en) | 1989-03-30 | 1989-03-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02260438A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0742586A2 (en) * | 1995-05-02 | 1996-11-13 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| EP0747943A2 (en) * | 1995-05-02 | 1996-12-11 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| US6249171B1 (en) | 1996-04-08 | 2001-06-19 | Texas Instruments Incorporated | Method and apparatus for galvanically isolating two integrated circuits from each other |
| JP2007301843A (en) * | 2006-05-11 | 2007-11-22 | Nichia Chem Ind Ltd | Resin molding, method for molding the molding, light emitting device, and method for producing the device |
-
1989
- 1989-03-30 JP JP8091389A patent/JPH02260438A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0742586A2 (en) * | 1995-05-02 | 1996-11-13 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| EP0747943A2 (en) * | 1995-05-02 | 1996-12-11 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| EP0747943A3 (en) * | 1995-05-02 | 1998-02-18 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| EP0742586A3 (en) * | 1995-05-02 | 1998-03-11 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| US5912024A (en) * | 1995-05-02 | 1999-06-15 | Texas Instruments Incorporated | Sproutless pre-packaged molding for component encapsulation |
| US5955115A (en) * | 1995-05-02 | 1999-09-21 | Texas Instruments Incorporated | Pre-packaged liquid molding for component encapsulation |
| US6531083B1 (en) | 1995-05-02 | 2003-03-11 | Texas Instruments Incorporated | Sproutless pre-packaged molding for component encapsulation |
| US6249171B1 (en) | 1996-04-08 | 2001-06-19 | Texas Instruments Incorporated | Method and apparatus for galvanically isolating two integrated circuits from each other |
| JP2007301843A (en) * | 2006-05-11 | 2007-11-22 | Nichia Chem Ind Ltd | Resin molding, method for molding the molding, light emitting device, and method for producing the device |
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