JPH0225250B2 - - Google Patents

Info

Publication number
JPH0225250B2
JPH0225250B2 JP62093430A JP9343087A JPH0225250B2 JP H0225250 B2 JPH0225250 B2 JP H0225250B2 JP 62093430 A JP62093430 A JP 62093430A JP 9343087 A JP9343087 A JP 9343087A JP H0225250 B2 JPH0225250 B2 JP H0225250B2
Authority
JP
Japan
Prior art keywords
etching
solution
silicon
pyrocatechol
hydrogen peroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP62093430A
Other languages
English (en)
Japanese (ja)
Other versions
JPS632328A (ja
Inventor
Biichiko Nikorasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS632328A publication Critical patent/JPS632328A/ja
Publication of JPH0225250B2 publication Critical patent/JPH0225250B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P90/126—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H10P50/644—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
JP62093430A 1986-06-18 1987-04-17 シリコンのエツチング方法 Granted JPS632328A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/875,833 US4929301A (en) 1986-06-18 1986-06-18 Anisotropic etching method and etchant
US875833 1986-06-18

Publications (2)

Publication Number Publication Date
JPS632328A JPS632328A (ja) 1988-01-07
JPH0225250B2 true JPH0225250B2 (enExample) 1990-06-01

Family

ID=25366439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62093430A Granted JPS632328A (ja) 1986-06-18 1987-04-17 シリコンのエツチング方法

Country Status (3)

Country Link
US (1) US4929301A (enExample)
EP (1) EP0249767A3 (enExample)
JP (1) JPS632328A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2909743B2 (ja) * 1989-03-08 1999-06-23 富山日本電気株式会社 銅または銅合金の化学研磨方法
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
US6000411A (en) * 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
JP2995667B2 (ja) * 1990-11-27 1999-12-27 東海電化工業株式会社 銅を含む酸性過酸化水素水溶液の安定化法
US5242536A (en) * 1990-12-20 1993-09-07 Lsi Logic Corporation Anisotropic polysilicon etching process
US5753601A (en) * 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
WO1997005228A1 (en) * 1995-07-27 1997-02-13 Mitsubishi Chemical Corporation Method for treating surface of substrate and surface treatment composition therefor
US6393685B1 (en) 1997-06-10 2002-05-28 The Regents Of The University Of California Microjoinery methods and devices
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US3650957A (en) * 1970-07-24 1972-03-21 Shipley Co Etchant for cupreous metals
US3873203A (en) * 1973-03-19 1975-03-25 Motorola Inc Durable high resolution silicon template
GB1588669A (en) * 1978-05-30 1981-04-29 Standard Telephones Cables Ltd Silicon transducer
DE2922416A1 (de) * 1979-06-01 1980-12-11 Ibm Deutschland Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
EP0249767A3 (en) 1988-06-29
US4929301A (en) 1990-05-29
EP0249767A2 (en) 1987-12-23
JPS632328A (ja) 1988-01-07

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