JPH02246282A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable the analog and digital signal processing to be performed by a method wherein the electrons in the quantity corresponding to the coupling degree decided by the opposing distance of both electron feeding fine wires are exchanged with each other between the first and second electron gasses produced in an active layer by the first and second electrode feeding fine wires. CONSTITUTION:An electron feeding fine wire 20 doped with an n type impurity is formed in a lower layer 12 while linear electron gas 30 is produced in an active layer 14 by the fed electrons. Besides, another electron feeding fine wire 40 doped with the same n type impurity is formed in the upper layer 16 while the linear electron gas 50 is produced in the active layer 14 by the fed electrons. These two electron feeding fine wires 20, 40 are arranged opposing to each other at specific distance through the intermediary of the active layer 14 to exchange the electrons with each other in the quantity corresponding to the coupling degree decised by the specific distance. Through these procedures, ultrahigh-density integration and analog and digital signal processing can be performed.

Description

Detailed Description of the Invention [Summary] Regarding semiconductor devices, particularly novel analog and digital signal processing elements capable of ultra-high density integration, novel semiconductor devices capable of ultra-high density integration and capable of analog and digital signal processing. In order to provide a semiconductor device, the method comprises doping impurities into first and second layers, an active layer inserted between the first and second layers, and the first layer. a first electron supply thin wire formed by doping an impurity into the second layer and generating a first electron gas in the active layer; a second thin electron supplying wire that generates a The first electron gas and the second electron gas are configured to exchange an amount of electrons according to the degree of coupling determined by the predetermined distance.

[Industrial Field of Application] The present invention relates to semiconductor devices, and particularly to novel analog and digital signal processing elements capable of ultra-high density integration.

With the recent development and sophistication of information processing technology, there is a demand for ultra-high-speed, multi-functional, highly integrated devices.

Until now, integrated circuits such as CPUs and memories have been formed by integrating signal processing elements such as MOSFETs and bipolar transistors, and information processing technology has been developed using these integrated circuits. However, there is a risk that these existing integrated circuits will eventually reach a limit in their degree of integration and will not be able to meet the demands of advanced information processing technology.

[Prior Art] In general, the behavior of electrons in a device is considered to be divided into a classical physical operating region, a quantum effect region, and an intermediate region between them, depending on the size and operating temperature of the device structure, as shown in Figure 4. ing.

As device structures become smaller and operating temperatures decrease, electrons begin to exhibit quantum effect (wave) properties.

The size of current semiconductor device structures is at least 0.5 μm.
Basically, it utilizes the properties of electrons in the classical physical operating region. If the confinement of carrier electrons is reduced by one line or more to less than 500, the electrons will exhibit wave properties. Therefore, to overcome the limitations of existing devices, quantum effect devices that utilize the wave nature of electrons in the quantum effect region have been proposed.

[Problems to be Solved by the Invention] However, the manufacturing methods of the currently proposed devices are immature, and there is no device that actually functions as a device and can replace existing devices.

The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a novel semiconductor device that is capable of ultra-high density integration and that is capable of performing analog and digital signal processing.

[Means for Solving the Problems] The above object is to dope impurities into first and second layers, an active layer inserted between the first and second layers, and the first layer. a first electron supply thin wire formed by doping impurities into the active layer and generating a first electron gas in the active layer; a second thin electron supply wire that generates electron gas, and the first thin electron supply wire and the second thin electron supply wire are arranged so as to face each other a predetermined distance with the active layer interposed therebetween. This is achieved by a semiconductor device characterized in that an amount of electrons is exchanged between the first electron gas and the second electron gas according to the degree of coupling determined by the predetermined distance.

[Function] According to the present invention, the first electron gas is generated between the first electron gas and the second electron gas generated in the active layer by the first electron supply thin wire and the second electron supply thin wire. Analog and digital signal processing can be performed by exchanging an amount of electrons according to the degree of coupling determined by the facing distance between the electron supply thin wire and the second electron supply thin wire.

[Embodiment] A semiconductor device according to a first embodiment of the present invention is shown in FIG. 1. FIG. 1(a) is a plan view of the basic structure of the semiconductor device of this embodiment, and FIG. It is a sectional view taken along the Ia line.

A lower layer 12 of non-doped AjGaAs is epitaxially grown on the GaAs substrate 1o by, for example, the MBE method. A GaAS active layer 14 is epitaxially grown on the lower layer 12 , and the lower layer 12 is grown on the active layer 14 .
An upper layer 16 of the same non-doped 1AjGaAs is epitaxially grown. That is, a non-doped AJGaAs/GaAs heterostructure is formed on the GaAs substrate 10 by the lower layer 12, the active Ji layer 14, and the upper layer 16.

In the vicinity of the hetero interface of the lower layer 12, an electron supply thin wire 20 doped with an n-type impurity is formed with a width of about 0.1 μm or less. In the active layer 14, a thin wire 20 for supplying electrons is provided.
A one-dimensional electron gas 30 is generated by the electrons supplied from.

Also near the hetero interface of the upper layer 16, a thin electron supplying wire 40 doped with an n-type impurity and having a width of about 0.1 μm or less is formed. In the active layer 14, there is a thin wire 4 for supplying electrons.
A one-dimensional electron gas 50 is generated by electrons supplied from zero.

As shown in FIG. 1(a), the electron supply thin wire 40 in the upper layer 16 has a straight line shape running vertically, and
A part of the electron supply thin wire 20 in 2 is the electron supply thin wire 40.
It has a linear shape that runs left and right while facing each other with the active layer 14 interposed therebetween.

The electron supply thin wire 20.40 is formed by doping silicon, which is an n-type impurity, by implanting a focused silicon ion beam, for example.

In the part where the electron supply thin wire 20 and the electron supply 4[1140] face each other, as shown in FIG. 1(b), the one-dimensional electron gas 30 and one-dimensional electron gas 40 formed in the active layer 14
The amount of electrons corresponding to the degree of bonding determined by the distance 2 between the two faces is exchanged between them.

That is, the -dimensional electron gas of 30.40 is as shown in Fig. 1(b).
The electron gas probability distribution is as shown in . , D4°, and the electron gas probability distribution is. The coupling constants Cxy and Cyx are determined by the degree of overlap between Cxy and D4°. Coupling coefficient Cxy
is the coupling coefficient between the one-dimensional electron gas 30 and the electron gas 40, and the coupling coefficient Cvx (=CXY) is the coupling coefficient between the -dimensional electron gas 40 and the one-dimensional electron gas 30.

Note that when the doping concentration in the electron supply thin wire 20.40 is 5 x 10 "cIl-', the -dimensional electron gas probability distribution D3°, D, is located about 30 degrees from the interface with the active layer 14. However, the electron gas probability distribution is

The length of the bridge will be 10%, or about 150 people. Therefore, if the thickness of the active layer 14 is about 300, it is possible to obtain a large bond without any practical problems.

For example, the one-dimensional electron gas 30 is caused to flow from the left side to the right side in FIG. 1(a), and between the -dimensional electron gases 40, for example,
The intensity of the electrons output after the electrons are exchanged when flowing from the bottom to the top will be explained using the graph in FIG. 2.

FIG. 2(a) shows the output signal X' of the one-dimensional electron gas 30 with respect to the distance 11tlz, and FIG. 2(b) shows the output signal Y' of the -dimensional electron gas 40. That is, the output signals X' and Y' are as follows: X' (z)=Ao eXP (-Jβ2)X CO
3Cxy □ Y' (z) =-(l CXYI /CXY)
AOxexp(-Jβz) 5inl Cxyl
It becomes z.

Moreover, the powers PX and Py of the output signals X' and Y' are as follows: Px = 2 X' 2 ''2Ao (cosl CXYI z ) 2PY
=21Y"+2"2Ao (5inl Cxyl Z) 2.

As shown in Figure 2, no electron transfer occurs when 1cxylZ is 0 or π, but when IC-xYZ is π/
In case 2, electrons are completely transferred. For values intermediate between these, a migration of electrons occurs according to the graph of FIG.

In this way, the electron gas transfer occurs according to the facing distance 2 between the -dimensional electron gas 30 and the one-dimensional electron gas 40, so that the input signals X, Y are input to the -dimensional electron gas 30 and the one-dimensional electron gas 40.
By inputting a current corresponding to , it is possible to obtain output signals X' and Y' corresponding to the degree of coupling. That is, if the oncoming road Hz is set to a value between 0 and π/2,
Analog signal processing is possible, and if the opposite path NZ is set to a value between 0 and π/2, digital signal processing is possible. Therefore, it is possible to realize a semiconductor device capable of ultra-high density integration and capable of performing analog or digital signal processing by utilizing the wave nature of electrons in the quantum effect region.

A semiconductor device according to a second embodiment of the present invention is shown in FIG. 3. Components that are the same as those of the semiconductor device in FIG. 1 are given the same reference numerals and explanations will be omitted.

In this embodiment, a plurality of thin wires for supplying electrons are provided along the directions in which each wire is formed, and by adjusting the facing distance 2 of each bonding portion, a bonding matrix having a desired degree of bonding is constructed.

That is, the electron supply thin wires 41, 42 . in the upper layer 16 .
43 has a straight line shape running vertically, and each of the electron supply thin wires 21, 22, 23 in the lower layer 12 partially faces the electron supply thin wires 41, 42, 43 with the active layer 14 in between. It has a straight line shape that runs left and right. Opposing path M Z + 4.212 in the opposing portion of the electron supply thin wire 21.22.23 and the electron supply thin wire 41.42.43,...
- The degree of coupling is determined by adjusting Zii and Z33.

By forming the electron supplying thin wires 21 to 23 and 41 to 43 in this manner, an amount of electrons corresponding to the degree of bonding is exchanged between the one-dimensional electron gases 31 to 33 and 51 to 53 generated in the active layer 14. Ru. Therefore, -dimensional electron gas 31-33
Flow current according to signals XI, X2, Xs as -
Signals Yl, Y2, Ys as dimensional electron gases 41 to 43
When a current corresponding to is passed, the facing distance Z1+%Z12,...
・, z32, the signal is processed according to Zim and becomes the signal X1'
, X2', Xs·YI, Y*', and Ys' are output.

As described above, according to this embodiment, it is possible to realize a bonding matrix that has an extremely fine structure and can be integrated at an extremely high density. By using this connection matrix, a large-scale associative memory can be realized.

The present invention is not limited to the above-mentioned embodiments, and various modifications are possible.

For example, in the above embodiment, non-doped AjGaAs/G
Although the semiconductor device has been described in which silicon ions are implanted into the aAs heterostructure to form electron supply thin wires, the semiconductor device may be realized using other materials.

Furthermore, in the above embodiment, a one-dimensional electron gas is generated to exchange electrons between the -dimensional electron gases, but a two-dimensional electron gas is generated in the active layer and electrons are exchanged between the two-dimensional electron gases. Signal processing may be performed by exchanging them.

[Effects of the Invention] As described above, according to the present invention, ultra-high density integration is possible and analog and digital signal processing can be performed.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a graph explaining the operation of the semiconductor device 1, and FIG. 3 is a diagram showing a semiconductor device according to a second embodiment of the present invention. The figure shown in FIG. 4 is an explanatory diagram of the behavior of electrons in the device. In the figure, 10...GaAs substrate 12...Lower layer 14...Active layer 16...Upper layer 20.21-23...Thin wires for electron supply 30.31-3
3...-dimensional electron gas 40.41-43... Thin wire for electron supply 50.51-53...-dimensional electron gas ICx
ylX-1CXYIZ' Graph 2 explaining the operation of the semiconductor device according to the first embodiment of the present invention

Claims (1)

[Scope of Claims] 1. a first layer and a second layer; an active layer inserted between the first and second layers; formed by doping impurities into the first layer; a first electron supply thin wire that generates a first electron gas in the active layer; and a first electron supply thin wire that is formed by doping an impurity into the second layer and generates a second electron gas in the active layer. a second electron supply thin wire, the first electron supply thin wire and the second electron supply thin wire are arranged to face each other a predetermined distance with the active layer interposed therebetween; A semiconductor device characterized in that an amount of electrons is exchanged between an electron gas and the second electron gas in accordance with a degree of coupling determined by the predetermined distance. 2. The semiconductor device according to claim 1, wherein a plurality of the first and second electron supply thin wires are each formed, and the plurality of first electron supply thin wires and the plurality of second electron supply thin wires are formed. are arranged along different directions so as to face each other, and by adjusting the facing distance in each opposing portion of the plurality of first electron supply thin wires and the plurality of second electron supply thin wires, a predetermined result is obtained. A semiconductor device comprising a coupling matrix of coupling degrees.