JPH0224541U - - Google Patents
Info
- Publication number
- JPH0224541U JPH0224541U JP10147188U JP10147188U JPH0224541U JP H0224541 U JPH0224541 U JP H0224541U JP 10147188 U JP10147188 U JP 10147188U JP 10147188 U JP10147188 U JP 10147188U JP H0224541 U JPH0224541 U JP H0224541U
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- melting point
- high melting
- point metal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10147188U JPH0224541U (US07122547-20061017-C00032.png) | 1988-07-30 | 1988-07-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10147188U JPH0224541U (US07122547-20061017-C00032.png) | 1988-07-30 | 1988-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0224541U true JPH0224541U (US07122547-20061017-C00032.png) | 1990-02-19 |
Family
ID=31330498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10147188U Pending JPH0224541U (US07122547-20061017-C00032.png) | 1988-07-30 | 1988-07-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0224541U (US07122547-20061017-C00032.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255911A (ja) * | 1994-12-30 | 1996-10-01 | Siliconix Inc | 分布抵抗を低減する厚い金属レイヤを有する縦形パワーｍｏｓｆｅｔ及びその製作方法 |
| JPH08264785A (ja) * | 1994-12-30 | 1996-10-11 | Siliconix Inc | 集積回路ダイ及びその製造方法 |
-
1988
- 1988-07-30 JP JP10147188U patent/JPH0224541U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255911A (ja) * | 1994-12-30 | 1996-10-01 | Siliconix Inc | 分布抵抗を低減する厚い金属レイヤを有する縦形パワーｍｏｓｆｅｔ及びその製作方法 |
| JPH08264785A (ja) * | 1994-12-30 | 1996-10-11 | Siliconix Inc | 集積回路ダイ及びその製造方法 |
