JPH02244693A - Formation of superconductive thick film circuit - Google Patents
Formation of superconductive thick film circuitInfo
- Publication number
- JPH02244693A JPH02244693A JP1069451A JP6945189A JPH02244693A JP H02244693 A JPH02244693 A JP H02244693A JP 1069451 A JP1069451 A JP 1069451A JP 6945189 A JP6945189 A JP 6945189A JP H02244693 A JPH02244693 A JP H02244693A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- film circuit
- superconducting
- substrate
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000000843 powder Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 51
- 238000010304 firing Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 5
- 238000004898 kneading Methods 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052697 platinum Inorganic materials 0.000 abstract description 14
- 238000005245 sintering Methods 0.000 abstract description 12
- 239000011812 mixed powder Substances 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 26
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011224 oxide ceramic Substances 0.000 description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910001923 silver oxide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、超電導物質により基板上に密着性に優れた
厚膜回路を形成する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for forming a thick film circuit with excellent adhesion on a substrate using a superconducting material.
従来の技術
各種超電導物質の中で、例えば液体窒素の沸点以上の高
臨界温度を持つ超電導物質としては、現在までのところ
、イツトリウム系複合酸化物などの酸化物セラミックス
系超電導物質が知られている。Conventional technology Among various superconducting materials, oxide ceramic-based superconducting materials such as yttrium-based composite oxides are currently known as superconducting materials that have a high critical temperature higher than the boiling point of liquid nitrogen. .
この酸化物セラミックス系超電導物質を用いてスクリー
ン印刷法等で回路パターンを形成した超電導プリント基
板の製造方法も従来より提案されている（特開昭６３−
２９９１９２号公報など）。A method for manufacturing a superconducting printed circuit board in which a circuit pattern is formed using this oxide ceramic superconducting material by screen printing or the like has also been proposed (Japanese Unexamined Patent Application Publication No. 1983-1999).
299192, etc.).
発明が解決しようとする課題
しかし、酸化物セラミックス系超電導物質は一般に機械
的強度が弱いという欠点があり、特に従来のスクリーン
印刷法によってこの酸化物セラミックス系超電導物質と
なる原料粉末を用いて基板上に厚膜回路パターンを形成
し、その俊焼成して超電導厚膜回路を形成した場合には
、緻密な超電導厚膜を形成することができないばかりで
なく、その厚膜と基板や電極との間の密着力が充分得ら
れず、その結果、圧縮カヤ振動等の外力が加わると超電
導厚膜に割れやひびが生じるという問題があった。特に
、酸化物セラミックス系超電導物質の厚膜回路を形成し
たプリント基板における外部回路との接点は、外部回路
側のコネクタの接点と圧接するため、接点付近の超電導
厚膜に圧縮力がかかり、またコネクタの着脱の際には振
動も起き易いため、超電導片膜に亀裂が入ったり、接点
の電極上に形成された超電導厚膜の部分が剥離を起す等
により断線を生じ易いという問題があった。Problems to be Solved by the Invention However, oxide ceramic superconducting materials generally have a drawback of low mechanical strength. If a thick film circuit pattern is formed on the substrate and then baked to form a superconducting thick film circuit, not only will it be impossible to form a dense superconducting thick film, but also there will be problems between the thick film and the substrate or electrodes. As a result, there is a problem in that the superconducting thick film cracks or cracks when external forces such as compressive shell vibrations are applied. In particular, the contact point with the external circuit on a printed circuit board on which a thick film circuit made of oxide ceramic superconducting material is formed is in pressure contact with the contact point of the connector on the external circuit side, so compressive force is applied to the superconducting thick film near the contact point. Since vibration is likely to occur when connecting and disconnecting the connector, there was a problem in that the superconducting strip film could crack or the thick superconducting film formed on the contact electrode could peel off, resulting in wire breakage. .
この発明は上記問題点に鑑みなされたもので、基板面お
よび電極どの密着性に優れ、割れや剥離を生じるおそれ
の少ない超電導厚膜回路を形成する超電導厚膜回路の形
成り法を提供することを目的どしている。This invention has been made in view of the above problems, and provides a method for forming a superconducting thick film circuit that has excellent adhesion to the substrate surface and electrodes, and is less likely to cause cracking or peeling. The purpose is
課題を解決するための手段
上記課題庖解決するための手段どしてこの発明の超電導
厚膜回路の形成方法は、超電導物質となる原料粉末にＡ
ｑ粉末もしくはＡＱ ２０粉末を混合し、これに溶媒を
加えてペースト状に混練し、得られた混練物を用いて基
板上に厚膜回路パターンを形成した後、Ａｇの融点以上
の温度で焼成づ“ることを特徴としでいる。Means for Solving the Problems The method for forming a superconducting thick film circuit of the present invention includes adding A to a raw material powder to be a superconducting material.
q powder or AQ 20 powder is mixed, a solvent is added to this and kneaded to form a paste, and the resulting kneaded product is used to form a thick film circuit pattern on a substrate, after which it is fired at a temperature above the melting point of Ag. It is characterized by
作 用
この発明の方法においては、先ず超電導物質となる原料
粉末に所定量のＡｉａもしくはＡ！：＋ ２０粉末を混
合した混合粉末の混練物を作製−するａづなわら、前記
混合粉末に溶媒を加えてｄ２練し、ペースト状の混練物
を作製Ｊ゛る。次いで、イの混練物を用いてスクリーン
印刷法等により基板−１に厚膜回路パターンを形成する
。ここぐ、一般に／リント基板における厚膜回路の形成
においては、基板上の所定の位貿に予め白金等の良導電
性金属からなる電極を形成しておくか、あるいはその電
極どなるべき導体ペーストを塗荀しておくのが通常であ
り、したがって、この場合には前記混練物からなる厚膜
回路パターンは電極上：にも形成されることになる。Function: In the method of the present invention, first, a predetermined amount of Aia or A! is added to the raw material powder that becomes the superconducting material. : Preparation of a kneaded product of mixed powder obtained by mixing 20 powders A and d2, a solvent is added to the mixed powder and kneaded to prepare a paste-like kneaded product. Next, a thick film circuit pattern is formed on the substrate-1 by a screen printing method or the like using the kneaded material of (a). Generally, when forming a thick film circuit on a lint board, electrodes made of a highly conductive metal such as platinum are formed in advance at predetermined positions on the board, or a conductive paste is used to form the electrodes. It is usual to coat the kneaded material in advance, and therefore, in this case, the thick film circuit pattern made of the kneaded material is also formed on the electrode.
上記のようにして厚膜回路パターンを形成した後、Ａｇ
の融点以上の温度で一焼成する。この焼成のための昇温
過程においては、先ず、その厚膜回路パターンを構成し
ているＹｌｉ棟物生物中媒が分解もしくは揮にし、厚膜
回路パターンの層は、粒子間に空隙が存在するポーラス
なものどなる。ざらに、八ｇの融点以上の温度となれば
、厚膜回路パターン層内のＡｏ （混合粉末中の八〇
）が溶融１−る。After forming the thick film circuit pattern as described above, Ag
Fire at a temperature above the melting point of. In the temperature raising process for firing, first, the Yli structure biological media that constitutes the thick film circuit pattern is decomposed or volatilized, and the layer of the thick film circuit pattern has voids between particles. Porous roared. Roughly speaking, if the temperature exceeds the melting point of 8g, Ao (80g in the mixed powder) in the thick film circuit pattern layer will melt.
ぞＬ−ｒ、溶融したＡｇは粒子間の空隙を伝わって基板
もしくは電極との界面に向って流れ、その結果、厚膜回
路パターン層と基板表面もしくは電極表面どの界面に溶
融へ〇が集り、その部分に溶融Ａｇｌが形成されること
となる。なお、Ａ（１２０粉末を用いる場合は、焼成の
ための昇温過程の２００℃程度においてＡＱ ２０が分
解して酸素を放出し、Ａ（１２０粉末粒子は一旦Ａｑ粉
末粒子となり、その後Ａｇどして溶融することになる。L-r, the molten Ag flows through the gaps between the particles toward the interface with the substrate or electrode, and as a result, the molten Ag gathers at the interface between the thick film circuit pattern layer and the substrate surface or the electrode surface. Molten Agl will be formed in that portion. In addition, when using A(120 powder), AQ 20 decomposes and releases oxygen at around 200°C during the heating process for firing, and the A(120 powder particles become Aq powder particles and then become Ag-like powder particles. It will melt.
一方、上記の焼成時には、超電導物質となる原料粉末が
焼結され、Ｉ３電導物質の焼結層からなるＪ９膜が形成
される。したがって、焼成後の冷ｋ］過程においで、前
記の溶融Ａ（＋が凝固覆れば、超電導物質の焼結層から
なる厚膜と基板もしくは電極表面との間に中間層として
１％が形成されることになる。On the other hand, during the above firing, the raw material powder that becomes the superconducting material is sintered, and a J9 film consisting of a sintered layer of the I3 conductive material is formed. Therefore, in the cooling process after firing, if the molten A (+) solidifies, 1% of the intermediate layer will be formed between the thick film made of the sintered layer of the superconducting material and the substrate or electrode surface. will be done.
ここで、Ａｇ層はもともと厚膜回路パターン層中に混在
していたへ〇粉末粒子が溶出して形成されたものである
から、そのＡ（１層は超電導物質の焼結層からなる厚膜
との境界部分では、厚喚中の空隙に入り込んだ状態とな
ってＪ’５つ２したが・−で、Ａｇ層と片膝とは機械的
に強固に結合・一体止していることになる。−・一方、
Ａｇ層と基板もしくは電極の表面との境界部分では、溶
融したＡｇが基板もしく、は電極表面の微細な凹凸に流
入して凝固することにより、基板もしくは電極表面に対
１−るＡＱの機械的投錨効果が得られ、そのため、Ａｇ
層は基板もしく電極の表面に対して強い密着力で結合す
ることになる。したがつて、超電導物質の焼結層からな
る厚情と基板もしくは電極どの間は、中間層どしてのＡ
ｇ岡を介して機械的に強固に結合された状態どなる。Here, since the Ag layer was formed by the elution of powder particles originally mixed in the thick film circuit pattern layer, the Ag layer (one layer is a thick film consisting of a sintered layer of superconducting material) At the boundary between the two, the Ag layer and one knee were mechanically firmly connected and fixed as one body, and the Ag layer entered the gap between the layers. It becomes.-・On the other hand,
At the boundary between the Ag layer and the surface of the substrate or electrode, molten Ag flows into the minute irregularities on the surface of the substrate or electrode and solidifies, causing the AQ mechanical contact with the surface of the substrate or electrode. A target anchoring effect is obtained, and therefore Ag
The layer will bond with strong adhesion to the surface of the substrate or electrode. Therefore, between the layer consisting of a sintered layer of superconducting material and the substrate or electrode, there is no intermediate layer A.
The state of being mechanically and firmly connected via the g-oka is loud.
また、特に電極上の部分にｔｊい（−は、電極自体が金
属であるため、溶融Δｇの濡れ性が優れ、したがって、
ＡＣ３層は電極表面に対し一層より一層強い密着力で結
合されることになり、その結果、厚膜も中間層であるＡ
ｇ層を介して基板に対しで強い密着力で結合されること
になる。In addition, the part above the electrode is particularly tj (- means that the electrode itself is a metal, so the wettability of the melting Δg is excellent, and therefore,
The three AC layers are bonded to the electrode surface with even stronger adhesion, and as a result, the thick film also has the intermediate layer A.
It is bonded to the substrate through the G layer with strong adhesion.
以上のように、この発明の方法で・は、８！４電′４物
質となる原料粉末にＡｇ粉末らしくはＡ！ＩＩ ２０粉
末を混合した混合粉末の混練物を用いて厚膜回路パター
ンを形成した後、Ａ（ｌの融点以上の温度で焼成するこ
とによって、基板もしくは電極と超電導厚膜とが中間層
のＡａ層を介して高い密着力で結合される。したがって
、超電導厚膜に亀裂や割れが生じたり剥離したりするこ
とを有効に防止できる。また、基板面と超電導厚膜回路
との界面にＡａｌＷが形成されることにより、基板成分
と超電導物質との間の反応が減少し、焼結による超電導
特性の劣化を防ぐ効果も期待できる。As described above, in the method of the present invention, the raw material powder that becomes the 8!4 electron'4 substance has A! After forming a thick film circuit pattern using a kneaded mixture of II 20 powder, the substrate or electrode and the superconducting thick film are bonded to the intermediate layer A They are bonded with high adhesion through the layers. Therefore, it is possible to effectively prevent cracks and cracks in the superconducting thick film from occurring or peeling off. In addition, AalW is bonded to the interface between the substrate surface and the superconducting thick film circuit. This formation reduces the reaction between the substrate components and the superconducting material, and can also be expected to have the effect of preventing deterioration of superconducting properties due to sintering.
発明の実施のための具体的な説明
酸化物セラミックス系超電導物質として、例えばＹＢａ
２ Ｃｕ ３０７−ｙ （イツトリウム−バリウム
−銅酸化物系超電′＃動物質を用いて超電導厚膜回路を
形成する場合には、ＹＢａ ２ Ｃｕ ３０７−ｙとな
る原料粉末に、銀粉末（Ａ！＋ ＞あるいは酸化銀粉末
（Ａ（１２０）を混入する。この銀粉末あるいは酸化銀
粉末の混入量は特に限定しないが、超電導物質となる原
料粉末の量に対して約５〜１０重量％の範囲が望ましく
、７重量％程度が最適である。ここで、銀粉末が５重量
％未満では、中間層としてのへ〇層が均一の形成されな
いため、超電導厚膜に充分な密着力が得られず、一方、
１０１ｆｆｉ％を超えると充分な密着力は得られるが、
厚膜内の超電導物質粒子相互間の接触がＡ（］により妨
げられて、超ｗＬ導物性を損なうおそれが生じる。Specific explanation for carrying out the invention As the oxide ceramic superconducting material, for example, YBa
2 Cu 307-y (When forming a superconducting thick film circuit using a yttrium-barium-copper oxide superconducting material, silver powder (A !+>Alternatively, silver oxide powder (A(120)) is mixed.The amount of this silver powder or silver oxide powder mixed is not particularly limited, but it is about 5 to 10% by weight based on the amount of raw material powder that becomes the superconducting material. A desirable range is about 7% by weight.If the silver powder content is less than 5% by weight, the intermediate layer will not be formed uniformly, and sufficient adhesion will not be obtained for the superconducting thick film. On the other hand,
Sufficient adhesion can be obtained when it exceeds 101ffi%, but
Contact between superconducting material particles within the thick film is prevented by A(], and there is a possibility that super-wL conductivity may be impaired.
次に、銀粉末あるいは酸化銀粉末を混合した超電導物質
となる原料の粉末に溶媒を加えて混練し、厚膜回路形成
用のペーストを製造する。そして、得られたペーストを
用いてスクリーン印刷法等により、イツトリウム安定化
ジルコニア（ＹＳＺ）基板や、高純度アルミナ基板また
は酸化マグネシウム基板等のセラミックス系基板上に厚
膜回路パターンを印刷した後、この厚膜回路パターンを
形成した基板を焼成する。このときの焼結温度Ｔは、Ａ
ｇの融点（常圧で９６２℃）以上に設定する。Next, a solvent is added to the powder of the raw material that will become the superconducting material mixed with silver powder or silver oxide powder and kneaded to produce a paste for forming a thick film circuit. Then, a thick film circuit pattern is printed on a ceramic substrate such as a yttrium-stabilized zirconia (YSZ) substrate, a high-purity alumina substrate, or a magnesium oxide substrate using the obtained paste by a screen printing method or the like. The substrate on which the thick film circuit pattern is formed is fired. The sintering temperature T at this time is A
g melting point (962°C at normal pressure) or higher.
また焼結温度の上限は、使用する超電導物質の組成によ
って異るが、超電導層が形成される最高温度（ＹＢａ
２ Ｑｕ ３０７−ｙの場合には１１００”Ｃ）以下が
望ましい。The upper limit of the sintering temperature varies depending on the composition of the superconducting material used, but the maximum temperature at which a superconducting layer is formed (YBa
In the case of 2 Qu 307-y, 1100''C) or less is desirable.
また、超電導物質となる原料粉末に酸化銀粉末を混合し
て使用した場合には、焼結工程において２００℃前後に
加熱された際に分解し、酸素を放出して銀粉末となり、
その後Ａ（ｌとして溶融することとなる。In addition, when silver oxide powder is mixed with the raw material powder that becomes the superconducting material, it decomposes when heated to around 200°C in the sintering process, releases oxygen, and becomes silver powder.
After that, it will be melted as A(l).
そして、焼結後に０２７ニール（焼鈍〉を行うと、ＹＳ
Ｚ基板上に超電導厚膜回路が形成される。Then, when 027 anneal (annealing) is performed after sintering, YS
A superconducting thick film circuit is formed on the Z substrate.
焼結して形成された超電導厚膜回路は、ＹＳＺ基板上に
形成された状態の切片を作り顕微鏡下で観察すると、Ｙ
ＳＺ基板の表面に銀層が形成され、このｔＢ層の上に超
電導物質の焼結体が形成されて超電導厚膜回路を構成し
ていることが判る（第３図の金属組織を示す電子顕微鏡
写真参照）。When the superconducting thick film circuit formed by sintering is sectioned on a YSZ substrate and observed under a microscope, the Y
It can be seen that a silver layer is formed on the surface of the SZ substrate, and a sintered body of superconducting material is formed on this tB layer to constitute a superconducting thick film circuit (Fig. 3 shows an electron microscope showing the metal structure). (see photo).
このＹＳＺ基板上に形成された超電導厚膜回路の銀層と
超電導物質の焼結体との境界部分は、第３図の写真から
も解るように、銀層はもともと厚膜回路パターン層内に
混在していた銀が溶出し、基板表面に凝集したものであ
るため、起電ｉ＃動物質焼結体表面の凹凸に入り込んで
焼結体との間を機械的に結合し、銀層と基板もしくは電
極表面との境界部分も同様に、溶融した銀が、基板表面
の微細な凹凸に流入して凝固することにより機械的投錨
効果が得られる。その結果、超電導厚膜回路は銀層を介
して基板上に密着性よく強固に形成される。As can be seen from the photograph in Figure 3, the boundary between the silver layer of the superconducting thick film circuit formed on this YSZ substrate and the sintered body of superconducting material is where the silver layer was originally formed within the thick film circuit pattern layer. Since the mixed silver was eluted and aggregated on the substrate surface, it penetrated into the irregularities on the surface of the electrogenic i# animal sintered body and mechanically bonded with the sintered body, forming a bond between the silver layer and the sintered body. Similarly, at the interface with the substrate or electrode surface, molten silver flows into the fine irregularities on the substrate surface and solidifies, thereby producing a mechanical anchoring effect. As a result, the superconducting thick film circuit is firmly formed on the substrate with good adhesion via the silver layer.
なお、銀粉末を混合することによる超電導特性への影響
を調べるため、超電導物質となる原料粉末にＡｑ粉末を
混合した場合と、銀粉末を混合しない場合とについて、
基板上に形成された超電導厚膜回路の温度と電導特性と
の比較を行なったところ、銀粉末を７重量％混合した場
合（第４図のグラフ参照）の臨界温度がＴｃユ８７にで
、銀粉末を全く混入しなかった場合（第５図のグラフ参
照）の臨界温度がＴｃ＝ ８９ Ｋとなり、銀を添加し
ても超電導物質の臨界温度Ｔｃはほとんど影響を受けな
い。In order to investigate the effect of mixing silver powder on superconducting properties, we investigated cases in which Aq powder was mixed with the raw material powder that becomes the superconducting material and cases in which silver powder was not mixed.
A comparison of the temperature and conductivity properties of a superconducting thick film circuit formed on a substrate revealed that the critical temperature when 7% by weight of silver powder was mixed (see the graph in Figure 4) was Tc 87; The critical temperature when no silver powder is mixed (see the graph in FIG. 5) is Tc = 89 K, and the critical temperature Tc of the superconducting material is hardly affected by the addition of silver.
実施例
［実施例１］
第１図および第２図に示すように、イツトリウム安定化
ジルコニア（ＹＳＺ）基板１の回路端部となる位置に、
電極用の白金ペーストを予め塗布シタ後、超電導物質で
あるＹＢａ ２ Ｃｕ ３０７−ｙとなる原料粉末に７
重量％の銀粉末を混合し、溶媒を加えて混練したペース
トを用いてスクリーン印劉法により、基板１上に厚膜回
路パターンを印刷し、この厚膜回路パターンが印刷され
た面を上に向け、かつ水平な状態で基板１の焼成を行な
った。Example [Example 1] As shown in FIGS. 1 and 2, at the position of the circuit end of the yttrium stabilized zirconia (YSZ) substrate 1,
After pre-coating platinum paste for electrodes, 7%
A thick film circuit pattern is printed on the substrate 1 by the screen printing method using a paste prepared by mixing % by weight of silver powder, adding a solvent and kneading it, and then printing the thick film circuit pattern on the substrate 1 with the printed side of the thick film circuit pattern facing up. The substrate 1 was fired in a horizontal state.
焼結条件は１．焼結温度Ｔを銀の融点以上でかつＨ！Ｉ
雷導物質が超電導相を形成する最高温度以下の温度、す
なわち９６２℃≦Ｔ≦１ｉｏｏ℃に設定して焼成し、そ
の後に０２アニール（焼鈍）を行なった。The sintering conditions are 1. The sintering temperature T is higher than the melting point of silver and H! I
Firing was performed at a temperature below the maximum temperature at which the lightning conductive material forms a superconducting phase, that is, 962° C.≦T≦1ioo° C., and then 02 annealing (annealing) was performed.
その結果、基板１上の白金ペーストが塗布された位置に
白金電極２が形成されるとともに、所定の位置に超電導
厚膜回路３が形成され、この超電導厚膜回路３は銀層４
を介して基板１に密着性よく形成され、また超電導厚膜
回路３は白金電極２上に重なった部分においても、同様
に銀層４を介して密着性よく形成され、圧縮や振動等の
外力によく耐えて割れや剥離を生じない超電導厚膜回路
３を形成することができた。As a result, a platinum electrode 2 is formed at the position on the substrate 1 where the platinum paste is applied, and a superconducting thick film circuit 3 is formed at a predetermined position.
The superconducting thick film circuit 3 is formed with good adhesion to the substrate 1 through the silver layer 4, and the superconducting thick film circuit 3 is also formed with good adhesion through the silver layer 4 in the portion overlapping the platinum electrode 2, and is protected against external forces such as compression and vibration. It was possible to form a superconducting thick film circuit 3 that endures well and does not cause cracking or peeling.
［実施例２１
第６図３３よび第７図に示すように、ＹＳＺ基板１１上
の回路端部となる位置に溝を設けて白金あるいは金等の
高融点でかつ良導電性の金属ブロックを嵌め込んで電極
１２を形成Ｊる４Ｍ造となっており、この溝内には、溝
の内周面ど当接づる面にアルミニウム等の低融点の金属
のメツキ層１３を形成した金属ブロックが嵌め込まれて
いる。[Example 21] As shown in FIGS. 6, 33 and 7, a groove was provided at the position of the circuit end on the YSZ board 11, and a metal block made of platinum or gold with a high melting point and good conductivity was inserted into the groove. It has a 4M construction in which the electrode 12 is formed in the groove, and a metal block with a plating layer 13 of a low melting point metal such as aluminum formed on the surface that contacts the inner peripheral surface of the groove is fitted. It is.
そしてｆＢ Ｔｓ 尋物質であるＹＢａ ２ Ｃ１ｊ
３０７−ｙとなる原料粉末に７重量％の＠粉末を混合し
、溶媒を加えて混練したペーストを用い、前記実施例１
と同様にスクリーン印刷法によって基板１１上に厚膜回
路パターンを印刷し、焼結温度Ｔを銀の融点以上でかつ
超電導物質が、超電導相を形成づる最高温度以下の温度
、すなわち９６２℃≦Ｔ≦１１００℃の範囲内に設定し
て焼成し、ぞの後に０２７ニールを行なった。And fB Ts is a substance YBa 2 C1j
Example 1 was prepared by mixing 7% by weight of @ powder with the raw material powder of 307-y, adding a solvent, and kneading the paste.
Similarly, a thick film circuit pattern is printed on the substrate 11 by the screen printing method, and the sintering temperature T is set to be above the melting point of silver and below the maximum temperature at which the superconducting material forms a superconducting phase, that is, 962°C≦T. The temperature was set within the range of ≦1100° C. for firing, and then 027 anneal was performed.
その結果、基板１の溝に嵌め込まれた電極１２は、アル
ミニウム等の低融点金属のメツキ層１３が基板１１の成
分と反応して溝内に強固に固定された。そして、所定の
位置に超電導厚膜回路１４が１１１１１５を介して基板
１１上に密着性よく形成され、また超電導厚膜回路１４
と白金電極１２とも同様に！１層１５を介して密着性よ
く形成され、圧縮や振動等の外力によく耐えて割れや剥
離を生じない超電導厚膜回路１４を形成することができ
た。As a result, the electrode 12 fitted into the groove of the substrate 1 was firmly fixed in the groove by the plating layer 13 of a low melting point metal such as aluminum reacting with the components of the substrate 11. Then, the superconducting thick film circuit 14 is formed at a predetermined position on the substrate 11 through the 111115 with good adhesion, and the superconducting thick film circuit 14
And the same with platinum electrode 12! It was possible to form a superconducting thick film circuit 14 that was formed with good adhesion through one layer 15, could withstand external forces such as compression and vibration well, and did not cause cracking or peeling.
（実施例３１
コネクタの差込み部を備えたプリント基板に適用した具
体例を示すもので、第８図に示すように、基板の右側端
部を幅狭に形成し、その部分の表面に複数の溝を形成す
るとともに、当接面にアルミニウムのメツキ層を形成し
た白金電極２２を各溝内に嵌め込んでコネクタ差込み部
２３としたＹＳＺ基板２１上には、超電導物質となる原
料粉末に７重量％の銀粉末を混入し、溶媒を加えて混練
した前記両実施例と同一組成のペーストを用いて厚腰回
路パターンを印刷し、同一の焼結条件で焼成し、コネク
タ差込み部２３上の超電導厚膜回路２４の端部側の一部
が各白金電極２２上に重なるように形成されている。(Example 31 This shows a specific example applied to a printed circuit board equipped with a connector insertion part. As shown in Fig. 8, the right end of the board is formed narrowly, and a plurality of On the YSZ substrate 21, which has grooves and a platinum electrode 22 with an aluminum plating layer formed on the contact surface, is fitted into each groove to form the connector insertion part 23. A thick circuit pattern was printed using a paste having the same composition as in both of the above embodiments, in which % of silver powder was mixed and mixed with a solvent, and the superconducting circuit pattern on the connector insertion part 23 was printed under the same sintering conditions. A portion of the end portion of the thick film circuit 24 is formed so as to overlap each platinum electrode 22 .
（して、コネクタ差込み部２３には、リード線２５のキ
ャップ状の」ネクタ２６が外周を覆うように嵌合し、こ
のコネクタ２６の各電極２７がＹＳＺ基板２１側の各白
金電極２２に圧接して電気的に接続されるようになって
いる。(Then, the cap-shaped connector 26 of the lead wire 25 is fitted into the connector insertion part 23 so as to cover the outer periphery, and each electrode 27 of this connector 26 is pressed into contact with each platinum electrode 22 on the YSZ board 21 side. It is designed to be electrically connected.
さらに、ＹＳＺ基板２１土には、搭載するＩＣ等の電子
素子２８の各端ｆ２８ａの固定用の電極２９が予め設け
られでおり、超電導厚膜回路２４を形成した際に、超電
導厚膜回路２４が銀層を介して各電極２９に同時に配線
接続され、電子素子２８の搭載時には、電子素子２８の
各端子２８ａを、所定の電極２９にハンダ付【プあるい
は圧着して容易に接続できるようになっている。Further, electrodes 29 for fixing each end f28a of an electronic element 28 such as an IC to be mounted are provided in advance on the YSZ substrate 21, and when the superconducting thick film circuit 24 is formed, the superconducting thick film circuit 24 are wire-connected to each electrode 29 simultaneously through a silver layer, and when the electronic element 28 is mounted, each terminal 28a of the electronic element 28 can be easily connected to a predetermined electrode 29 by soldering or crimping. It has become.
したがって、上記のように形成された超電導厚膜回路２
４は、コネクタ差込み部２３の白金電極２２に対してｆ
ＩＩ／１層を介して強固に密接して、基板上に超電導厚
膜回路が直接形成された場合と比べて接続部の耐久性が
大幅に向上する。その結果、コネクタ差込み部２３に対
してコネクタ２６の脱着操作を繰返し行なっても、コネ
クタ２６の装着時の圧縮力や、脱着時の振動によって超
電導厚膜回路２４が白金電極２２から剥離せず、また割
れやひびが生じて断線することもない。Therefore, the superconducting thick film circuit 2 formed as described above
4 is f with respect to the platinum electrode 22 of the connector insertion part 23.
The durability of the connection portion is greatly improved compared to the case where the superconducting thick film circuit is directly formed on the substrate due to the strong and close contact via the II/1 layer. As a result, even if the connector 26 is repeatedly attached and detached from the connector insertion part 23, the superconducting thick film circuit 24 will not be separated from the platinum electrode 22 due to the compressive force when the connector 26 is attached or the vibration when detached. Also, there is no risk of breakage due to breakage or cracks.
発明の詳細
な説明したようにこの発明の超電導厚膜回路の形成方法
は、超電導物質となる原料粉末にＡｇ粉末もしくはＡｇ
２Ｏ粉末を混合し、これに溶媒を加えてペースト状に混
練し、得られた混練物を用いて基板上に厚膜回路パター
ンを形成した後、ＡＱの融点以上の温度で焼成して超電
導厚膜回路を形成するので、焼成時に基板と厚膜回路パ
ターンとの間にＡ（］層が形成され、このＡｇ１１によ
って基板と厚膜回路パターンとの間の密着性が向上し、
割れや剥離等等の発生が防止されるとともに、基板成分
と厚膜回路パターンとの間の反応が減少し、焼結による
起電導特性の劣化を防ぐことができる等の効果を有する
。As described in detail, the method for forming a superconducting thick film circuit of the present invention uses Ag powder or Ag
2O powder is mixed, a solvent is added thereto, and the paste is kneaded. The resulting kneaded product is used to form a thick film circuit pattern on a substrate, and then fired at a temperature higher than the melting point of AQ to form a superconducting thick film. Since a film circuit is formed, an A() layer is formed between the substrate and the thick film circuit pattern during firing, and this Ag11 improves the adhesion between the substrate and the thick film circuit pattern.
This has the effect of preventing the occurrence of cracks, peeling, etc., reducing the reaction between the substrate components and the thick film circuit pattern, and preventing deterioration of electromotive conductive properties due to sintering.
第１図ないし第８図はこの発明の方法の実施例を示すも
ので、第１図はこの発明の方法で超電導厚膜回路を形成
した実施例１の基板の断面正面図、第２図は第１図の平
面図、第３図はこの発明の方法で形成した超電導厚膜回
路の金属組織を示す写真、第４図はこの発明の方法によ
り形成した超電導厚膜回路の温度と電気抵抗の関係を示
すグラフ、第５図は従来の方法で形成した超電１ｊ厚膜
回路の温度と電気抵抗の関係を示すグラフ、第６図はこ
の発明の方法で超電導厚膜回路を形成した実施例２の基
板の断面正面図、第７図は第６図の平面図、第８図はこ
の発明の方法で超電導厚膜回路を形成した実施例３の基
板の斜視図である。
１．１１．２１・・・ＹＳＺ基板、 ２，１２．２２・
・・白金電極、 ３・・・超電導厚膜回路、 ４・・・
銀層、 １４．２４・・・超電導厚膜回路、 １５・・
・銀層、２６・・・コネクタ、 ２７・・・電極、 ２
８・・・電子素子、 ２９・・・電極。
第１図
第２図
第５図
第３図
Ｘ浅−一→（Ｋ）1 to 8 show examples of the method of the present invention. FIG. 1 is a cross-sectional front view of a substrate of Example 1 in which a superconducting thick film circuit was formed by the method of the present invention, and FIG. FIG. 1 is a plan view, FIG. 3 is a photograph showing the metal structure of a superconducting thick film circuit formed by the method of the present invention, and FIG. 4 is a photograph showing the temperature and electrical resistance of the superconducting thick film circuit formed by the method of the present invention. FIG. 5 is a graph showing the relationship between temperature and electrical resistance of a superconducting 1j thick film circuit formed by the conventional method. FIG. 6 is an example in which a superconducting thick film circuit was formed by the method of the present invention. 7 is a plan view of FIG. 6, and FIG. 8 is a perspective view of a substrate of Example 3 in which a superconducting thick film circuit is formed by the method of the present invention. 1.11.21...YSZ board, 2,12.22.
...Platinum electrode, 3...Superconducting thick film circuit, 4...
Silver layer, 14.24... Superconducting thick film circuit, 15...
・Silver layer, 26... Connector, 27... Electrode, 2
8...Electronic element, 29...Electrode. Figure 1 Figure 2 Figure 5 Figure 3
Claims (1)
Ｏ粉末を混合し、これに溶媒を加えてペースト状に混練
し、得られた混練物を用いて基板上に厚膜回路パターン
を形成した後、Ａｇの融点以上の温度で焼成することを
特徴とする超電導厚膜回路の形成方法。Ag powder or Ag_2 is used as the raw material powder to become the superconducting material.
It is characterized by mixing O powder, adding a solvent to it, kneading it into a paste, forming a thick film circuit pattern on a substrate using the obtained kneaded product, and then firing it at a temperature above the melting point of Ag. A method for forming superconducting thick film circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1069451A JP2646735B2 (en) | 1989-03-16 | 1989-03-16 | Method of forming superconducting thick film circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1069451A JP2646735B2 (en) | 1989-03-16 | 1989-03-16 | Method of forming superconducting thick film circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02244693A true JPH02244693A (en) | 1990-09-28 |
| JP2646735B2 JP2646735B2 (en) | 1997-08-27 |
Family
ID=13403019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1069451A Expired - Lifetime JP2646735B2 (en) | 1989-03-16 | 1989-03-16 | Method of forming superconducting thick film circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2646735B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04263486A (en) * | 1991-02-19 | 1992-09-18 | Matsushita Electric Ind Co Ltd | Sintered conductor wiring board and manufacture thereof |
| JP2011244536A (en) * | 2010-05-14 | 2011-12-01 | Toyota Motor Corp | Superconducting motor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288407A (en) * | 1988-09-24 | 1990-03-28 | Mitsubishi Mining & Cement Co Ltd | Ceramic superconducting paste and its production and ceramic superconducting distributing board and its production |
-
1989
- 1989-03-16 JP JP1069451A patent/JP2646735B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288407A (en) * | 1988-09-24 | 1990-03-28 | Mitsubishi Mining & Cement Co Ltd | Ceramic superconducting paste and its production and ceramic superconducting distributing board and its production |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04263486A (en) * | 1991-02-19 | 1992-09-18 | Matsushita Electric Ind Co Ltd | Sintered conductor wiring board and manufacture thereof |
| JP2011244536A (en) * | 2010-05-14 | 2011-12-01 | Toyota Motor Corp | Superconducting motor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2646735B2 (en) | 1997-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Silver‐palladium thick‐film conductors | |
| EP0153737B1 (en) | Circuit substrate having high thermal conductivity | |
| EP0463872B1 (en) | Method of manufacturing circuit board and circuit board itself manufactured by said method | |
| EP0574956A1 (en) | Metallized circuit substrate comprising nitride type ceramics | |
| KR970008549B1 (en) | Silver-rich conductor compositions for high thermal cycled and aged adhesion | |
| JPH0715101A (en) | Oxide ceramic circuit board and its manufacture | |
| US5763093A (en) | Aluminum nitride body having graded metallurgy | |
| JP3754748B2 (en) | Conductor paste for filling through holes, ceramic circuit boards and package boards | |
| JPH02244693A (en) | Formation of superconductive thick film circuit | |
| US4906405A (en) | Conductor composition and method of manufacturing a multilayered ceramic body using the composition | |
| JP3098288B2 (en) | Conductor composition and ceramic substrate using the same | |
| JP2665557B2 (en) | Bonded structure of ceramic body and external terminals | |
| JPH0246603A (en) | Conductive paste | |
| JP2000114724A (en) | Multilayer wiring board | |
| JPH0950904A (en) | Electrically conductive paste and ntc thermistor using it | |
| JPH0288407A (en) | Ceramic superconducting paste and its production and ceramic superconducting distributing board and its production | |
| JP2764087B2 (en) | Ceramic superconductor paste and method of manufacturing ceramic superconductor wiring circuit board using the paste | |
| JP2738600B2 (en) | Circuit board | |
| JP2742627B2 (en) | Ceramic body having metallized metal layer | |
| JP3450998B2 (en) | Wiring board and its mounting structure | |
| JPS58130590A (en) | Ceramic circuit board and thick film hybrid ic using same board | |
| JP3537667B2 (en) | Wiring board | |
| JPS63248785A (en) | High heat conductivity circuit substrate | |
| JP2000185967A (en) | Composition for glass ceramic circuit board | |
| JP2000022294A (en) | Electronic component circuit board |