JPH0224027B2 - - Google Patents

Info

Publication number
JPH0224027B2
JPH0224027B2 JP56052032A JP5203281A JPH0224027B2 JP H0224027 B2 JPH0224027 B2 JP H0224027B2 JP 56052032 A JP56052032 A JP 56052032A JP 5203281 A JP5203281 A JP 5203281A JP H0224027 B2 JPH0224027 B2 JP H0224027B2
Authority
JP
Japan
Prior art keywords
substrate
region
conductivity type
high concentration
concentration impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56052032A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57166066A (en
Inventor
Tetsuya Iizuka
Hiroshi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56052032A priority Critical patent/JPS57166066A/ja
Priority to US06/364,639 priority patent/US4559548A/en
Priority to DE8282102994T priority patent/DE3276920D1/de
Priority to EP82102994A priority patent/EP0062894B1/en
Publication of JPS57166066A publication Critical patent/JPS57166066A/ja
Publication of JPH0224027B2 publication Critical patent/JPH0224027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56052032A 1981-04-07 1981-04-07 Bias generating system for substrate Granted JPS57166066A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56052032A JPS57166066A (en) 1981-04-07 1981-04-07 Bias generating system for substrate
US06/364,639 US4559548A (en) 1981-04-07 1982-04-02 CMOS Charge pump free of parasitic injection
DE8282102994T DE3276920D1 (en) 1981-04-07 1982-04-07 Semiconductor device
EP82102994A EP0062894B1 (en) 1981-04-07 1982-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56052032A JPS57166066A (en) 1981-04-07 1981-04-07 Bias generating system for substrate

Publications (2)

Publication Number Publication Date
JPS57166066A JPS57166066A (en) 1982-10-13
JPH0224027B2 true JPH0224027B2 (enrdf_load_stackoverflow) 1990-05-28

Family

ID=12903464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56052032A Granted JPS57166066A (en) 1981-04-07 1981-04-07 Bias generating system for substrate

Country Status (1)

Country Link
JP (1) JPS57166066A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55175259U (enrdf_load_stackoverflow) * 1979-05-31 1980-12-16

Also Published As

Publication number Publication date
JPS57166066A (en) 1982-10-13

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