JPH02232949A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH02232949A
JPH02232949A JP5430889A JP5430889A JPH02232949A JP H02232949 A JPH02232949 A JP H02232949A JP 5430889 A JP5430889 A JP 5430889A JP 5430889 A JP5430889 A JP 5430889A JP H02232949 A JPH02232949 A JP H02232949A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
cell
function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5430889A
Other languages
Japanese (ja)
Inventor
Yoshio Inoue
善雄 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5430889A priority Critical patent/JPH02232949A/en
Publication of JPH02232949A publication Critical patent/JPH02232949A/en
Pending legal-status Critical Current

Links

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  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To build P and N MOS transistors in a semiconductor integrated circuit device so that a revision of the device can be easily performed by a method wherein when an automatic arrangement wiring is performed on the device by a CAD device, a FEED cell, which is automacatically inserted in the circuit device, is used. CONSTITUTION:In case the function of an inverter is added between functional calls A(1) and B(2) of a semiconductor integrated circuit device, P and N MOS transistors Tr4 snd Tr5 provided in a FEED cell 3 are used. In case the function of the inverter is realized in this cell 3, contact holes (CH)6, Al1(7) and Al2(8) are arranged and wirings in through holes (TH)9, Al110 and Al211 are modified in such a way that the inverter is inserted in a purposed signal wiring. Moreover, in case the function of the cell A(1) or B(2) is modified in addition to an addition of the function of the inverter, the modification is performed using the cell 3 which is inserted.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明はCAD装置を用いて自動配置配線を行い、設
計をした半導体集積回路装置に対し、ウェハプロセス用
マスク(以下マスクと略す)製作中及び完了後に発生し
た機能変更を容易にできうる様にした半導体集積回路装
置に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] This invention performs automatic placement and wiring using a CAD device, and is used to manufacture a wafer process mask (hereinafter abbreviated as mask) for a designed semiconductor integrated circuit device. The present invention also relates to a semiconductor integrated circuit device in which functional changes that occur after the device is completed can be easily changed.

〔従来の技術〕[Conventional technology]

第3図は従来の無機能ブロック(以下FEEDセルと呼
ぶ)を示す図である。図に示す様にFEEDセルは、機
能ブロック(以下セルと呼ぶ)間において電源用のアル
ミニウム配線(All)だけをセルのデータとして持っ
ている。
FIG. 3 is a diagram showing a conventional non-functional block (hereinafter referred to as FEED cell). As shown in the figure, the FEED cell has only aluminum wiring (All) for power supply between functional blocks (hereinafter referred to as cells) as cell data.

一般に、CAD装置を用いて自動配線を行う場合、セル
を効率よく配置した場合、機能セルだけではセル間に隙
間が生じ、セル化与える電源配線がとぎれてしまう。そ
のため隙間が生じた場合、隙間をうめるためにFEED
セルが自動的に挿入されるが、FEEDセルは隙間をう
めるだけの無機能セルである。
Generally, when automatic wiring is performed using a CAD device, when cells are efficiently arranged, gaps are created between the cells when only functional cells are used, and the power supply wiring for forming the cells is interrupted. Therefore, if a gap occurs, use FEED to fill the gap.
Cells are automatically inserted, but FEED cells are non-functional cells that only fill gaps.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

この様にして設計、囲発を行った半導体集積回路装置で
は、配置、配線長の妥当性を確認するために、CAD装
置の自動配置配線の出力結果を用いて、実配線長を用い
た遅延を確認し、半導体集積回路装置の信頼性を向上さ
せている。
In semiconductor integrated circuit devices designed and routed in this way, in order to confirm the validity of the placement and wiring length, the output results of automatic placement and wiring of the CAD device are used to calculate the delay using the actual wiring length. The reliability of semiconductor integrated circuit devices has been improved.

ところが、一度設計の完了した半導体集積回路装置にお
いて機能セルの削除、追加等の改訂が必要となった場合
、再度CAD装置を用いて自動配置配線を行なう必要が
有る。
However, if a semiconductor integrated circuit device whose design has been completed needs to be revised, such as by deleting or adding functional cells, it is necessary to perform automatic placement and wiring again using a CAD device.

そのために、機能セルの配置、セル間の配線が変更され
先に設計、開発し、確認したデータ全てを変更する必要
が生じる。
Therefore, the arrangement of functional cells and the wiring between cells are changed, and all the data that was previously designed, developed, and confirmed needs to be changed.

又、先のデータを用いてすでにマスクの製作が完了して
いる場合、全マスクを作り直さなければならない。
Furthermore, if the mask manufacturing has already been completed using the previous data, the entire mask must be manufactured again.

以上の様な問題のために、一度設計、闘発の完了した半
導体集積回路装置の改訂には、新規の半導体集積回路装
置を設計、開発するのと同様な時間及び費用が必要であ
るという問題点があった。
Due to the above-mentioned problems, the problem is that revising a semiconductor integrated circuit device once it has been designed and developed requires the same amount of time and expense as designing and developing a new semiconductor integrated circuit device. There was a point.

この発明は上記の様な問題点を解決するためになされた
もので、CAD装置を用いて自動配置配線を行った半導
体集積回路装置を設計、開発完了後に機能を改訂する場
合、改訂時間、改訂費用を最小限にとどめることのでき
る半導体集積回路装置を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and when revising the functions of a semiconductor integrated circuit device that has been automatically placed and routed using a CAD device after the completion of design and development, the revision time and An object of the present invention is to obtain a semiconductor integrated circuit device that can minimize costs.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体集積回路装置はCAD装置によっ
て自動配置配線を行う時に、自動的に挿入されるFEE
Dセルを用いて、容易に半導体集積回路装置の改訂が行
える様にFEEDセル内にPチャネル型MOSトランジ
スタとNチャネル型MOSトランジスタを内蔵する様に
したものである。
The semiconductor integrated circuit device according to the present invention has an FEE that is automatically inserted when performing automatic placement and wiring using a CAD device.
Using a D cell, a P-channel MOS transistor and an N-channel MOS transistor are built into the FEED cell so that the semiconductor integrated circuit device can be easily revised.

〔作用〕[Effect]

この発明における半導体集積回路装置はCAD装置によ
って自動的に挿入されるFEEDセルが、ゲートアレイ
と同様なマスター・スライス型の半導体集積回路装置を
実現することになり、半導体集積回略装置の機能を改訂
する場合、容易に機能の追加を行うことができるととも
に、他の機能ブロック間にある配線長をそのまま用いて
遅延を確認することが出来る様になり、再度の配置配線
が不用となる。
In the semiconductor integrated circuit device of this invention, the FEED cells automatically inserted by the CAD device realize a master slice type semiconductor integrated circuit device similar to a gate array, and the functions of the semiconductor integrated circuit device are improved. When revising, functions can be easily added, and delays can be confirmed by using the wiring lengths between other functional blocks as they are, eliminating the need for re-placement and wiring.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明に用いられるFEEDセルの一実施例
の図で、従来には、電源用のアルミ配線データしかなか
ったものに、Pチャネル型MOSトランジスタとNチャ
ネル型MOSトランジスタのデータが追加されている。
Figure 1 is a diagram of one embodiment of the FEED cell used in this invention.In the past, only aluminum wiring data for power supply was available, but data for P-channel MOS transistors and N-channel MOS transistors has been added. has been done.

第2図(a) (b)は第1図に示したFEEDセルを
用いたこの発明の一実施例である。第2図(a)は改訂
前を示したもので、半導体集積回路装置は、機能セルA
(1)と機能セルB (2)から構成されており、CA
D装置の配置配線を行い、CAD装置が配置配線を効率
よく行うために自動的に挿入されたFEEDセル(3)
が配置されている。
FIGS. 2(a) and 2(b) show an embodiment of the present invention using the FEED cell shown in FIG. Figure 2(a) shows the state before revision, and the semiconductor integrated circuit device has functional cell A.
It consists of (1) and functional cell B (2), and CA
A FEED cell (3) that was automatically inserted to enable the CAD device to efficiently place and route the D device.
is located.

しかし、半導体集積回路装置の改訂を行う必要が生じ、
機能セルA(1)と機能セルB(2)の間にインバータ
機能を追加することとした場合、従来はこの発明で示し
たFEEDセル(3)の様にトランジスタ(4) . 
(5)を有しないため、最初の工程から全てやり直さな
ければならないが、本発明では、第2図(b)に示す様
に、FEEDセル(3)内に設けられたPチャネル型M
OSトランジスタ(4)とNチャネル型MOSトランジ
スタ(5)を用いて追加を容易に行うことが出来る。
However, it became necessary to revise the semiconductor integrated circuit device,
When an inverter function is added between functional cell A (1) and functional cell B (2), conventionally, transistors (4) .
However, in the present invention, as shown in FIG. 2(b), the P-channel type M provided in the FEED cell (3) is
Addition can be easily made using an OS transistor (4) and an N-channel type MOS transistor (5).

FEEDセル(3)内にインパータ機能を実現する様に
コンタクトホール(CH)(6), All (7),
 A12(8)を配置し、目的の信号配置内にインバー
タを挿入する様スルーホール(TH)(9)及び、A 
11(7) , A 12 (8)の配線を変更すれば
よい。
Contact holes (CH) (6), All (7),
Place A12 (8) and insert the through hole (TH) (9) and A to insert the inverter into the desired signal arrangement.
11(7) and A12(8) may be changed.

また上記実施例ではインバータ機能の追加の場合を示し
たが、追加される機能はインパータ以外でも同様に容易
に行うことができる。
Further, although the above embodiment shows the case where an inverter function is added, the added function can be similarly easily performed using a device other than an inverter.

又、機能の追加以外で、機能セルA(1)又は機能セル
B(2)の機能を変更する場合も、挿入されてぃるFE
EDセル(3)を用いて、変更することになる。
Also, when changing the function of function cell A (1) or function cell B (2) other than adding a function, the inserted FE
This will be changed using the ED cell (3).

これらの追加、変更で、変更する必要のあるウェハプロ
セス工程は最大、All(7). TH(9), CH
(a), A12(8)の4工程で、4枚のマスク変更
で対応できることになる。
With these additions and changes, the maximum number of wafer process steps that need to be changed is All(7). TH(9), CH
This can be done by changing four masks in four steps (a) and A12(8).

その他、追加、変更された部分を含んだ遅延確認も、改
訂時、自動配置、配線を実行し直す必要かないため、前
のデータを全て用いることができ、設計開発時間を短縮
することができる。
In addition, there is no need to re-execute automatic placement and wiring when making revisions for delay confirmation that includes added or changed parts, so all previous data can be used, reducing design development time.

〔発朋の効果〕[Effect of birth]

以上のようにこの発明によれば、CAD装置を用いて自
動配置配線を行った、半導体集積回路装置において、設
計、關発完了後、機能変更、追加が必要になった場合容
易に、機能の追加、変更が行えるとともに、追加、変更
に必要な費用、時間を少なくすることができるという効
果がある。
As described above, according to the present invention, in a semiconductor integrated circuit device in which automatic placement and wiring are performed using a CAD device, when a function change or addition becomes necessary after the design and start-up is completed, the function can be easily changed or added. Additions and changes can be made, and the cost and time required for additions and changes can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例であるFEEDセルを示す
平面図、第2図は第1図に示したFEDDセルを用いた
半導体集積回路の平面図で、図(a)は改訂前の半導体
集積回路装置の一部を示し、図(b)は改訂後の図(a
)相当部を示した図、第3図は従来の半導体集積回路に
用いられているFEEDセルを示した平面図である。 図において、(1)はセルA,(2)はセルB,(3)
はFEEDセル、(4)はPチャネルMOSトランジス
タ、(5)ばNチャネルMOSトランジスタ、(6)は
コンタクトホール、(7)はAll、 一ルを示す。 なお、図中、 を示す。 同一符号は同一、
FIG. 1 is a plan view showing a FEED cell which is an embodiment of the present invention, FIG. 2 is a plan view of a semiconductor integrated circuit using the FEDD cell shown in FIG. A part of the semiconductor integrated circuit device is shown, and figure (b) is the revised figure (a).
) FIG. 3 is a plan view showing a FEED cell used in a conventional semiconductor integrated circuit. In the figure, (1) is cell A, (2) is cell B, (3)
(4) is a P-channel MOS transistor, (5) is an N-channel MOS transistor, (6) is a contact hole, and (7) is an All. In addition, in the figure, is shown. The same code is the same,

Claims (1)

【特許請求の範囲】[Claims] CAD装置を用いて、自動的に半導体集積回路装置内の
機能ブロックを配置すると共に、この機能ブロック間の
信号配線をもCAD装置を用いて行う半導体集積回路装
置において、自動的に配置する無機能ブロックに対し、
未使用のPチャネル型MOSトランジスタとNチャネル
型MOSトランジスタを内蔵し、半導体集積回路装置の
ウェハプロセス用マスクの製作中及び完了後に発生した
機能変更を容易にできるようにしたことを特徴とする半
導体集積回路装置。
In a semiconductor integrated circuit device, a CAD device is used to automatically place functional blocks within a semiconductor integrated circuit device, and signal wiring between these functional blocks is also performed using a CAD device. For the block,
A semiconductor characterized by incorporating an unused P-channel MOS transistor and an N-channel MOS transistor, and making it easy to change functions that occur during and after the fabrication of a mask for wafer processing of a semiconductor integrated circuit device. Integrated circuit device.
JP5430889A 1989-03-07 1989-03-07 Semiconductor integrated circuit device Pending JPH02232949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5430889A JPH02232949A (en) 1989-03-07 1989-03-07 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5430889A JPH02232949A (en) 1989-03-07 1989-03-07 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPH02232949A true JPH02232949A (en) 1990-09-14

Family

ID=12966944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5430889A Pending JPH02232949A (en) 1989-03-07 1989-03-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPH02232949A (en)

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