JPH02232326A - Copper material having good joinability with ceramic - Google Patents

Copper material having good joinability with ceramic

Info

Publication number
JPH02232326A
JPH02232326A JP5285589A JP5285589A JPH02232326A JP H02232326 A JPH02232326 A JP H02232326A JP 5285589 A JP5285589 A JP 5285589A JP 5285589 A JP5285589 A JP 5285589A JP H02232326 A JPH02232326 A JP H02232326A
Authority
JP
Japan
Prior art keywords
copper
ceramic
layer
ceramics
good
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5285589A
Other languages
Japanese (ja)
Other versions
JP2590255B2 (en
Inventor
Motohisa Miyato
宮藤 元久
Riichi Tsuno
津野 理一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP1052855A priority Critical patent/JP2590255B2/en
Publication of JPH02232326A publication Critical patent/JPH02232326A/en
Application granted granted Critical
Publication of JP2590255B2 publication Critical patent/JP2590255B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302Cu as the principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PURPOSE:To manufacture copper material having good joinability with ceramic without strictly executing the regulation of impurities by providing tough pitch copper contg. oxygen of specified concn. with a high purity Cu layer having specified thickness. CONSTITUTION:Tough pitch copper having 180 to 300ppm oxygen concn. and the balance Cu with inevitable impurities is provided with a high purity Cu layer of 1 to 20mu. Furthermore, in the high purity Cu layer, Cu concn. is preferably regulated to about >=99.95% and it is provided by plating treatment. In this way, a copper material having relatively smooth surface, allowing stable mounting of elements and having good joinability with ceramic can be obtd., which is useful for a ceramic-copper composite material as electronic parts.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、セラミックスとの接合性の良い鋼材に関する
. [従来の技術] セラミックスに鋼材を接合した接合体がハイブリットI
Cなどの電子部品に多く用いられている。これらの接合
は、従来、モリブデンやタングステンなどの有機バイン
ダーを含む金属ペーストをセラミックス上に印刷した後
、雰囲気炉で加熱して金属ペーストをメタライズさせて
メタライズ層を形成し、次いで、メタライズ層をニッケ
ルメッキした後、鋼材をハンダ付けにより接合させると
いった種々の工程を含む複雑な方法で行われていた. これに対し、セラミックスと鋼材との接合界面に銅の酸
化物(Cu20)を生成させてセラミックスと銅を直接
接合させるという簡車な工程からなる方法が開発され、
注目されている.この方法は、セラミックスと鋼材とを
直接接触させた状態で単に加熱処理して両者を接合させ
るものである。銅−酸素の2元状態図から理解されるよ
うに、1065℃以上の温度に加熱して酸素を接触界面
に供給することにより、Cu.O液相を形成させること
ができるが、これを利用してセラミックスと鋼材とを直
接接合させるのである.酸素の供給方法には銅中の酸素
による方法(タフピッチ銅使用)と雰囲気中に存在させ
た酸素による方法(無酸素銅使用)とがあり、タフピッ
チ銅を使った接合法が一般的に用いられている。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a steel material that has good bondability with ceramics. [Conventional technology] Hybrid I is a bonded body made by bonding steel to ceramics.
It is often used in electronic parts such as C. Conventionally, these bonds have been made by printing a metal paste containing an organic binder such as molybdenum or tungsten on ceramics, then heating it in an atmospheric furnace to metallize the metal paste to form a metallized layer, and then coating the metallized layer with nickel. This was done using a complicated method that involved various steps, such as plating and then joining the steel materials by soldering. In response, a method has been developed that involves a simple process of directly bonding ceramics and copper by generating copper oxide (Cu20) at the bonding interface between ceramics and steel.
Attention has been paid. In this method, ceramics and steel are simply heat-treated in a state where they are in direct contact with each other to bond them together. As understood from the copper-oxygen binary phase diagram, Cu. It is possible to form an O liquid phase, and this is used to directly bond ceramics and steel materials. There are two methods of supplying oxygen: one using oxygen in copper (using tough pitch copper) and the other using oxygen present in the atmosphere (using oxygen-free copper), and the bonding method using tough pitch copper is generally used. ing.

この直接接合法はそれ以前の接合法に比べて工程も簡単
で種々の利点を有しているが、なお解決すべき問題点が
幾つか残っている. それは、銅が融点近傍まで加熱されて保持されるため、
30ppm前後含有されるS, Fe, Si,^8,
Pb, Niなどの不純物元素により局所的に融点が著
しく低下して、鋼材の表面(素子が搭載される表面)が
8i端に荒れる現象や、接触面で同様の局所的融点低下
が起ってぬれの面積が減り良好な接合が得られないとい
う現象が起る場合があるなどである. このため、接合歩留りが著しく低下してコストアップに
つながること、銅表面が荒れて素子の搭載が不可能とな
るなどの欠点があフた.したがって、使用されるタフピ
ッチ銅は、不純物元素であるS, Fa, Si,^g
, Pb, Niなどの含有量をそれぞれ10ppm以
下にする必要があり、工業的には、溶解炉の炉材、操業
条件など非常にきびしい制約を受けることになる. [発明が解決しようとする課!!!] 本発明は、上記に説明したような従来技術に鑑みなされ
たものであり、本発明の目的は、Sなどの不純物制御を
厳密に行う必要のない、セラミックスとの接合性の良い
銅材を提供することを目的とする, [課題を解決するための手段] 本発明の要旨は、酸素濃度が180〜300ppmであ
り、残部はCuおよび不可避不純物からなるタフピッチ
銅に1〜20μlの高純度Cu層を設けたことを特徴と
するセラミックスと接合性の良い鋼材に存在する. [作用] 本発明に係るセラミックスと接合性の良い銅材について
以下詳細に説明する. 酸素は、セラミックスと直接金属接合させる上での必須
の元素であり、180ppm未満の濃度では接合界面で
の酸素の供給量が不十分であり、接合不良が発生する。
Although this direct bonding method has a simpler process and various advantages compared to previous bonding methods, there are still some problems that remain to be resolved. This is because copper is heated to near its melting point and retained.
S, Fe, Si, ^8, contained around 30 ppm
Impurity elements such as Pb and Ni can significantly lower the melting point locally, causing the surface of the steel material (the surface on which the device is mounted) to become rough at the 8i edge, or similar local melting point decreases occurring at the contact surface. In some cases, the wetting area decreases and a good bond cannot be obtained. This resulted in a number of disadvantages, such as a significant drop in bonding yield, leading to increased costs, and the roughness of the copper surface, making it impossible to mount devices. Therefore, the tough pitch copper used contains the impurity elements S, Fa, Si,
, Pb, Ni, etc. must be kept below 10 ppm each, and industrially this is subject to very strict restrictions such as the furnace material of the melting furnace and operating conditions. [The problem that the invention tries to solve! ! ! ] The present invention has been made in view of the prior art as explained above, and an object of the present invention is to provide a copper material that does not require strict control of impurities such as S and has good bondability with ceramics. [Means for Solving the Problems] The gist of the present invention is to add 1 to 20 μl of high-purity Cu to tough pitch copper in which the oxygen concentration is 180 to 300 ppm, and the balance is Cu and unavoidable impurities. It exists in ceramics, which are characterized by a layered structure, and in steel materials, which have good bonding properties. [Function] The copper material having good bondability with the ceramic according to the present invention will be explained in detail below. Oxygen is an essential element for direct metal bonding with ceramics, and if the concentration is less than 180 ppm, the amount of oxygen supplied at the bonding interface will be insufficient, resulting in poor bonding.

また、300ppmを超える濃度では、接合性は良好で
あるが、高純度Cu層が1〜20μm施されていても、
素子が搭載される表面が荒れる(過剰の02が粒界に集
まり、表面あらさが大きくなる).よって、酸素濃度は
180〜300ppmとする. 高純度Cu層は、セラミックスとの接合界面において、
不可避的に混入して不純物元素による局所的融点の低下
を抑制し、界面でのCu20M相を十分に存在させ、良
好な接合界面を得る効果を有する, 高純度Cu層の厚さが、 lμ1未満ではその効果は少
なく、20μ諺を超えると接合性が低下する.よって、
高純度Cu層の厚さは1〜20μmとする. また、高純度Cu層を設けない場合、素子が搭載される
タフピッチ表面は、Gu,0液相の形成により、凸凹が
生じ、表面粗さが著しく大きくなる( RmaxlO 
μm以上)が、高純度Cu層を1〜20μm設けること
により表面が比較的平滑になり、素子搭載の品質安定に
つながる.この場合、高純度Cu層の厚さは厚くなるほ
ど良いが、セラミックスとの接合性ならびに表面粗さお
よびコスト面から、1〜20μ重が適切である. 高純度Cu層のCu濃度としては、99.95%以上が
好ましく、たとえば、めっき弟埋により設ければよい.
なお、メッキの場合、めっきのままでもよいが、素材表
面の平滑性をさらに良好にし、また、吸蔵ガスの除去の
ため、Cuめフき後、圧延および焼鈍処理を行ってもよ
い. なお、本発明において接合の対象となるセラミックスの
fl類には特に限定されないが、たとえば、^Il20
s,  ^10,・Si02などがあげられ、また、こ
れらのセラミックスは適宜の基体上に形成された膜であ
フてもよい. [実施例] 本発明に係るセラミックスと接合性″の良い鋼材をその
実施によって以下に詳説する. 第1表に示す含有成分および成分割合のタフピッチ鋼の
0.3muat材を供試材とした.セラミックスはアル
ミナ貿の1.5mmtX 30瓜lllwx501ll
I11のものを使用した。
In addition, at a concentration exceeding 300 ppm, bondability is good, but even if a high purity Cu layer is applied with a thickness of 1 to 20 μm,
The surface on which the element is mounted becomes rough (excess 02 collects at grain boundaries, increasing surface roughness). Therefore, the oxygen concentration is set at 180 to 300 ppm. At the bonding interface between the high-purity Cu layer and the ceramics,
The thickness of the high-purity Cu layer is less than lμ1, which has the effect of suppressing the local melting point decrease due to impurity elements that are unavoidably mixed in, and making the Cu20M phase sufficiently present at the interface to obtain a good bonding interface. However, the effect is small, and bondability decreases when the amount exceeds 20μ. Therefore,
The thickness of the high-purity Cu layer is 1 to 20 μm. In addition, when a high-purity Cu layer is not provided, the tough pitch surface on which the device is mounted becomes uneven due to the formation of the Gu,0 liquid phase, and the surface roughness increases significantly (RmaxlO
(μm or more), but by providing a high-purity Cu layer of 1 to 20 μm, the surface becomes relatively smooth, leading to stable quality of element mounting. In this case, the thicker the high-purity Cu layer, the better, but from the viewpoint of bondability with ceramics, surface roughness, and cost, a thickness of 1 to 20 μm is appropriate. The Cu concentration of the high-purity Cu layer is preferably 99.95% or more, and may be provided, for example, by plating.
In the case of plating, the plating may be left as is, but in order to further improve the smoothness of the surface of the material and to remove occluded gases, rolling and annealing may be performed after Cu plating. In addition, in the present invention, there is no particular limitation on the type of ceramics to be joined, but for example, ^Il20
Examples include s, ^10, .Si02, etc., and these ceramics may also be a film formed on a suitable substrate. [Example] A steel material having good bondability with ceramics according to the present invention will be explained in detail below based on its implementation. A 0.3 muat material of tough pitch steel having the ingredients and ratios shown in Table 1 was used as a test material. The ceramics are 1.5mmtX 30mmtx501ll from Alumina Trade.
I11 was used.

接合させる綱材ばあらかじめ0.3++v+tX 25
mm* x45m+aJZにエッチング加工にて準備し
た, Cuめっきはエッチング加工前硫酸銅めっき浴に
て実施した。
If the rope material to be joined is 0.3++v+tX 25
mm*x45m+aJZ was prepared by etching, and Cu plating was performed in a copper sulfate plating bath before etching.

接合試験は、セラミックスとを鋼材を重ねて、N2ガス
100%雰囲気中(露点−50℃)で、1070℃×1
0分加熱処理後、外観検査( x 40)を行い、フク
レの発生有無にて接合性を評価した。また、鋼材表面の
表面粗さ測定および走査電子顕微鏡により表面状況を観
察した6 第2表に試験条件ならびに試験結果を示す。
In the bonding test, ceramics and steel were stacked and heated at 1070°C x 1 in a 100% N2 gas atmosphere (dew point -50°C).
After the 0-minute heat treatment, a visual inspection (×40) was performed, and the bondability was evaluated based on the presence or absence of blisters. In addition, the surface roughness of the steel surface was measured and the surface condition was observed using a scanning electron microscope.6 Table 2 shows the test conditions and test results.

また、セラミックスに接合した鋼材の表面を走査電子顕
微鏡観察した結果のうち、代表例としてNo.l (実
施例)とNo.8 (比較例)を第1図(a),(b)
  に示す. 第2表および第1図より明らかなように、NO.1〜N
o.6 (実施例)は、比較例より、セラミックスとの
接合性が良好であり、素子などが搭載される鋼材表面も
RmaxX 10μm以下と平滑性に優れていた。
In addition, among the results of scanning electron microscope observation of the surface of steel material bonded to ceramics, No. 1 is a representative example. l (Example) and No. 8 (Comparative example) as shown in Figure 1 (a) and (b)
It is shown in As is clear from Table 2 and Figure 1, No. 1~N
o. 6 (Example) had better bondability with ceramics than the comparative example, and the surface of the steel material on which elements and the like were mounted had excellent smoothness with RmaxX of 10 μm or less.

これに対してNO.7およびNo.8 (比較例)はC
uめっき処理がなく、フクレの発生が多く、鋼材表面の
凹凸が発生している。
On the other hand, NO. 7 and no. 8 (Comparative example) is C
There is no u-plating treatment, so there is a lot of blistering, and the surface of the steel material is uneven.

No.9, to, 11. 12 (比較例)は、C
uめつきの有無にかかわらず、02?14度が300p
pmを超えており、フクレの発生は少なかったが、表面
粗さが大きかった● No.l3  14, 15  (比較例)は0,濃度
が1.l]Oppm未満であり、Cuめつきの有無を問
わず、鋼材表面の表面粗さは良好であるが、接合性に問
題がある. No.16  (比較例)は、不純物規制を行ったタフ
ピッチ鋼であり、接合性、表面粗さとも本発明と同等で
あるが、工業的に製造する上で、No.18ほどに不純
物を規制するためには、相当量の設備が必要になり、コ
ストアップ・生産性低下につながる. [発明の効果] 本発明によれば、極限の不純物規制を行う必要もなく、
従来のタフピッチ銅にCuめつき層を存在させることに
よりセラミックスとの接合性の良好な鋼材を提供するこ
とができ、たとえば、電子部品としてのセラミックスー
銅複合材の品質、生産性の向上に多大に寄与するもので
ある.第1表 (ppm) 第2表
No. 9, to, 11. 12 (Comparative example) is C
02 to 14 degrees is 300p with or without U-glazing
pm, and the occurrence of blisters was small, but the surface roughness was large● No. l3 14, 15 (comparative example) has a concentration of 0 and a concentration of 1. l]Oppm, and the surface roughness of the steel material surface is good regardless of the presence or absence of Cu plating, but there is a problem in bondability. No. No. 16 (comparative example) is a tough pitch steel with impurity control, and has the same bondability and surface roughness as the present invention, but in terms of industrial production, No. In order to control impurities to 18%, a considerable amount of equipment is required, leading to increased costs and decreased productivity. [Effects of the Invention] According to the present invention, there is no need to carry out extreme impurity control;
By adding a Cu plating layer to conventional tough pitch copper, it is possible to provide a steel material with good bonding properties with ceramics. This contributes to Table 1 (ppm) Table 2

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明No.1の鋼材を用いてアルミナ
セラミックスに直接接合した鋼材表面の結晶粒の状態を
示す走査電子顕微鏡写真である。第1図(b)は比較例
No.8の鋼材を用いてアルミナセラミックに直接接合
した銅材表面の結晶粒の状態を示す走査電子顕微鏡写真
である。 20.:1 μ壽 (a)本発明NO,1 ( b )比較材N0.8 第1図
FIG. 1(a) shows the present invention No. 1 is a scanning electron micrograph showing the state of crystal grains on the surface of a steel material directly bonded to alumina ceramics using steel material No. 1. FIG. 1(b) shows comparative example No. This is a scanning electron micrograph showing the state of crystal grains on the surface of a copper material directly bonded to an alumina ceramic using steel material No. 8. 20. : 1μju (a) Invention No. 1 (b) Comparative material No. 0.8 Figure 1

Claims (1)

【特許請求の範囲】[Claims]  酸素濃度が180〜300ppmであり、残部はCu
および不可避不純物からなるタフピッチ銅に1〜20μ
mの高純度Cu層を設けたことを特徴とするセラミック
スと接合性の良い銅材。
The oxygen concentration is 180 to 300 ppm, and the remainder is Cu.
1 to 20μ for tough pitch copper consisting of unavoidable impurities.
A copper material with good bondability to ceramics, characterized by having a high purity Cu layer of m.
JP1052855A 1989-03-07 1989-03-07 Copper material with good bondability with ceramics Expired - Lifetime JP2590255B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1052855A JP2590255B2 (en) 1989-03-07 1989-03-07 Copper material with good bondability with ceramics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1052855A JP2590255B2 (en) 1989-03-07 1989-03-07 Copper material with good bondability with ceramics

Publications (2)

Publication Number Publication Date
JPH02232326A true JPH02232326A (en) 1990-09-14
JP2590255B2 JP2590255B2 (en) 1997-03-12

Family

ID=12926475

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2590255B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997029216A1 (en) * 1996-02-09 1997-08-14 Brush Wellman Inc. Alloy c11004
JP2001274534A (en) * 2000-03-27 2001-10-05 Toshiba Corp Ceramics copper circuit board and method for manufacturing the same
EP1434265A1 (en) * 2002-12-27 2004-06-30 Mitsubishi Materials Corporation Heat-conducting multilayer substrate and power module substrate
US7128979B2 (en) 2002-04-19 2006-10-31 Mitsubishi Materials Corporation Circuit board, method of producing same, and power module
JP2009170875A (en) * 2007-12-21 2009-07-30 Murata Mfg Co Ltd Multilayer ceramic electronic component and method for manufacturing the same
JP2010034503A (en) * 2008-06-25 2010-02-12 Murata Mfg Co Ltd Multilayer ceramic electronic component and method for manufacturing thereof
US9418790B2 (en) 2007-12-21 2016-08-16 Murata Manufacturing Co., Ltd. Method for manufacturing a multilayer ceramic electronic component

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282797A (en) * 1986-05-29 1987-12-08 Dowa Mining Co Ltd Copper material for direct joining of ceramics-copper

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282797A (en) * 1986-05-29 1987-12-08 Dowa Mining Co Ltd Copper material for direct joining of ceramics-copper

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997029216A1 (en) * 1996-02-09 1997-08-14 Brush Wellman Inc. Alloy c11004
JP2001274534A (en) * 2000-03-27 2001-10-05 Toshiba Corp Ceramics copper circuit board and method for manufacturing the same
JP4557354B2 (en) * 2000-03-27 2010-10-06 株式会社東芝 Method for manufacturing ceramic copper circuit board
US7128979B2 (en) 2002-04-19 2006-10-31 Mitsubishi Materials Corporation Circuit board, method of producing same, and power module
EP1434265A1 (en) * 2002-12-27 2004-06-30 Mitsubishi Materials Corporation Heat-conducting multilayer substrate and power module substrate
JP2009170875A (en) * 2007-12-21 2009-07-30 Murata Mfg Co Ltd Multilayer ceramic electronic component and method for manufacturing the same
US9418790B2 (en) 2007-12-21 2016-08-16 Murata Manufacturing Co., Ltd. Method for manufacturing a multilayer ceramic electronic component
JP2010034503A (en) * 2008-06-25 2010-02-12 Murata Mfg Co Ltd Multilayer ceramic electronic component and method for manufacturing thereof

Also Published As

Publication number Publication date
JP2590255B2 (en) 1997-03-12

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