JPH02218123A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02218123A JPH02218123A JP3863989A JP3863989A JPH02218123A JP H02218123 A JPH02218123 A JP H02218123A JP 3863989 A JP3863989 A JP 3863989A JP 3863989 A JP3863989 A JP 3863989A JP H02218123 A JPH02218123 A JP H02218123A
- Authority
- JP
- Japan
- Prior art keywords
- implantation
- crystal
- degree
- semiconductor device
- damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000002513 implantation Methods 0.000 claims abstract description 17
- 238000005468 ion implantation Methods 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- 230000006378 damage Effects 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 6
- 238000000790 scattering method Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005280 amorphization Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 abstract description 15
- 238000011084 recovery Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体装置を製造するための不純物のイオン注
入の方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of ion implanting impurities for manufacturing semiconductor devices.
従来の技術
従来この種のイオン注入技術としては、イオン発生源か
らのイオンを質量分析系で選別し、２０〜２００ＫｅＶ
の高電圧で加速して、半導体結晶中に注入して半導体結
晶の格子位置を不純物イオンで置換する方法が一般的で
ある。このイオン注入の際に結晶の表面はイオン衝撃で
損傷を受け、いわゆるアモルファス（非晶質）層が形成
され、不純物は電気的にも不活性である。しかし、注入
後の数１００℃のアニール処理によって結晶性は回復し
、注入された不純物は結晶格子位置に落ちついて、電気
的にも活性化される。Conventional technology Conventionally, this type of ion implantation technology involves selecting ions from an ion source using a mass spectrometry system and applying a 20 to 200 KeV
A common method is to replace the lattice positions of the semiconductor crystal with impurity ions by accelerating them at a high voltage and injecting them into the semiconductor crystal. During this ion implantation, the surface of the crystal is damaged by ion bombardment, and a so-called amorphous layer is formed, and the impurity is electrically inactive. However, the crystallinity is restored by annealing at several 100° C. after the implantation, and the implanted impurity settles in the crystal lattice position and is also electrically activated.
発明が解決しようとする課題
このような半導体製造におけるイオン注入は、注入によ
る損傷（アモルファス層）形成とアニールによる結晶性
の回復が重要な問題となっている。一般に強度の損傷に
よってアモルファス化が起った時、もしくは非常に軽度
の損傷のときには、結晶性は回復するが、中度の損傷の
ときは、回復しない。したがって、注入工程では、アモ
ルファス化の程度の測定が非常に重要である。ところが
、アモルファス化度の測定には簡便な方法がなく、得ら
れた半導体デバイスの特性からイオン注入条件の良否を
大まかに判定するしかなかった。そのためにイオン注入
条件そのものを最適化しにくいという問題があった。Problems to be Solved by the Invention In such ion implantation in semiconductor manufacturing, important problems include damage (amorphous layer) formation due to implantation and recovery of crystallinity due to annealing. Generally, when amorphization occurs due to severe damage, or when the damage is very mild, the crystallinity is recovered, but when the damage is moderate, it is not recovered. Therefore, in the implantation process, it is very important to measure the degree of amorphization. However, there is no simple method for measuring the degree of amorphization, and it is only possible to roughly judge whether the ion implantation conditions are good or bad based on the characteristics of the obtained semiconductor device. Therefore, there was a problem in that it was difficult to optimize the ion implantation conditions themselves.
本発明はこのような問題点を解決するもので、注入によ
る損傷を完全に回復させるためのアモルファス化の度合
の測定にもとすいたイオン注入の方法を提供するもので
ある。The present invention solves these problems and provides an ion implantation method that is convenient for measuring the degree of amorphization in order to completely recover from damage caused by implantation.
課題を解決するための手段
課題を解決するために本発明は、注入による結晶の損傷
とくにアモルファス化度を正確に測定し、アニールによ
る結晶の完全な回復のためのイオン注入方法を提供する
。具体的にはラマン散乱法による非結晶性（アモルファ
ス化度）が２０％を超過しないように不純物のイオン注
入を行い処理する半導体装置の製造方法である。そして
、このようなアモルファス化２０％以下のイオン注入゛
とアニールを繰り返す。Means for Solving the Problems In order to solve the problems, the present invention provides an ion implantation method for accurately measuring crystal damage caused by implantation, particularly the degree of amorphization, and for complete recovery of the crystal by annealing. Specifically, this is a method of manufacturing a semiconductor device in which impurity ions are implanted and processed so that the non-crystallinity (amorphous degree) determined by the Raman scattering method does not exceed 20%. Then, such ion implantation and annealing to achieve 20% or less amorphization are repeated.
作用
この方法により、イオン注入を行なうと、非結晶性が２
０％以下なので、アニール処理での結晶性の回復が完全
であり、得られる半導体装置の電気特性は結晶欠陥によ
る耐圧特性やリーク電流などが著しく減小でき、優れた
半導体装置が得られる。Effect When ion implantation is performed using this method, the amorphous property becomes 2
Since it is 0% or less, the recovery of crystallinity during annealing treatment is complete, and the electrical properties of the resulting semiconductor device include significantly reduced breakdown voltage characteristics and leakage current due to crystal defects, resulting in an excellent semiconductor device.
実施例
Ｓｉ結晶（１００）面に不純物としてリンを注入し、イ
オン注入量とアモルファス化度を求めると第１図のよう
になる。ここでアモルファス化度はラマン散乱法によっ
て測定し、もとの結晶を０％とし、注入量を増大して完
全にアモルファス化した場合を１００％に規格化しであ
る。第１図のようにリンイオンをイオン電流０ 、３
ｍ Ａ 、加速電圧１００ＫｅＶの標準的な方法注入す
ると、１０１３〜１０１６ｃ１２の注入量で損傷が０〜
１００％に変化する。この図で斜線部分が、アニール処
理によって結晶性が完全に回復する領域でアモルファス
化度Ｏ〜２０％に相当する。したがって、Ｂ点で図示す
るような６ＸＩＯ”ｃ−−２のイオン注入量に対しては
、標準的な注入法では、アモルファス化度が４０％であ
り、６００℃のアニールをしても結晶性は回復しない。Example When phosphorus is implanted as an impurity into the (100) plane of a Si crystal, the ion implantation amount and the degree of amorphization are determined as shown in FIG. Here, the degree of amorphization is measured by a Raman scattering method, and is normalized to 0% for the original crystal and 100% for the case where the implantation amount is increased to completely become amorphous. As shown in Figure 1, the ion current of phosphorus ions is 0,3
When implanted using the standard method with mA and accelerating voltage of 100 KeV, the damage is 0 to
Changes to 100%. In this figure, the shaded area corresponds to a region where crystallinity is completely recovered by annealing treatment, and the degree of amorphization is 0 to 20%. Therefore, for the ion implantation amount of 6XIO"c--2 as shown at point B, the standard implantation method results in an amorphous degree of 40%, and even after annealing at 600°C, the crystallinity remains. does not recover.
ところが、注入量が２ Ｘ １０ ”ｃｍ−２であるＡ
点は、結晶性回復領域にあるので、直後のアニールで容
易に結晶性が回復できる。実験によって、Ａ点での注入
とアニールを３回繰り返して、Ｂ点と同じ注入量６ Ｘ
１０ ”ｃｍ−’が得られ、しかも結晶性は完全に回
復することが確かめられた。アモルファス化度への゛イ
オン条件に関連した条件の影響を調べると、注入時のビ
ーム電流密度のほか、加速電圧、ビーム径、イオン走査
方式、注入基板の温度、イオン注入の角度などによって
、アモルファス化の程度は大幅に変化することがわかっ
た。したがってイオン注入する際の個々の条件について
、ラマン散乱法によって正確にアモルファス化度を測定
し、結晶性が必ず回復する範囲でイオン注入しなければ
ならないことになる。However, A with an injection volume of 2 × 10” cm
Since the point is in the crystallinity recovery region, the crystallinity can be easily recovered by annealing immediately after. Through experiments, the implantation and annealing at point A were repeated three times to obtain the same implantation amount as at point B, 6X.
10 cm-' was obtained, and it was confirmed that the crystallinity was completely recovered. When examining the influence of conditions related to the ion conditions on the degree of amorphization, it was found that in addition to the beam current density during implantation, It was found that the degree of amorphization changes significantly depending on the acceleration voltage, beam diameter, ion scanning method, temperature of the implanted substrate, angle of ion implantation, etc. Therefore, the Raman scattering method Therefore, the degree of amorphization must be accurately measured, and ions must be implanted within a range that ensures that crystallinity is restored.
要するに、望ましいイオン注入を行うためには、所定の
イオン注入することと、ラマン散乱法によりアモルファ
ス化度を測定して、結晶性の回復可能なアモルファス化
度２０％以下での注入とアニールが重要な点である。ア
モルファス化度はＳｉ結晶の場合、０〜２０％の領域が
、結晶の回復に好都合であるが、さらに望ましくは０〜
１５％が良い。In short, in order to perform the desired ion implantation, it is important to implant ions in a specified manner, measure the degree of amorphization using Raman scattering, and perform implantation and annealing at an amorphization degree of 20% or less that can recover crystallinity. This is a point. In the case of Si crystals, the degree of amorphization is convenient for crystal recovery in the range of 0 to 20%, but more preferably 0 to 20%.
15% is good.
発明の効果
以上のように本発明によれば、イオン注入工程での結晶
性の回復が完全になり、半導体装置の結晶欠陥によるリ
ーク電流や耐圧不良が防止できるので半導体メモリー特
性や固体イメージ素子特性が著しく向上する。Effects of the Invention As described above, according to the present invention, crystallinity is completely recovered during the ion implantation process, and leakage current and breakdown voltage defects due to crystal defects in semiconductor devices can be prevented, thereby improving semiconductor memory characteristics and solid-state image device characteristics. is significantly improved.
第１図は本発明の詳細な説明図である。 FIG. 1 is a detailed explanatory diagram of the present invention.
Claims (4)
なるよう半導体基板に不純物のイオン注入し処理を行な
うことを特徴とする半導体装置の製造方法。(1) A method for manufacturing a semiconductor device, which comprises performing a process by implanting impurity ions into a semiconductor substrate so that the degree of amorphization due to implantation damage is 20% or less.
格化強度で示した値で、０〜２０％とすることを特徴と
する特許請求の範囲第１項記載の半導体装置の製造方法(2) A method for manufacturing a semiconductor device according to claim 1, characterized in that the value is 0 to 20% as a normalized intensity indicating the degree of crystal-amorphousness determined by Raman scattering method.
ことを特徴とする特許請求の範囲第１項記載の半導体装
置の製造方法(3) The method for manufacturing a semiconductor device according to claim 1, wherein the treatment is annealing after implantation or at the same time as implantation.
返すことを特徴とする特許請求の範囲第１項記載の半導
体装置の製造方法。(4) The method for manufacturing a semiconductor device according to claim 1, wherein the ion implantation of impurities and the treatment are each repeated multiple times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3863989A JPH02218123A (en) | 1989-02-17 | 1989-02-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3863989A JPH02218123A (en) | 1989-02-17 | 1989-02-17 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02218123A true JPH02218123A (en) | 1990-08-30 |
Family
ID=12530812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3863989A Pending JPH02218123A (en) | 1989-02-17 | 1989-02-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02218123A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005533384A (en) * | 2002-07-18 | 2005-11-04 | コミツサリア タ レネルジー アトミーク | Method for transporting electrically active thin films |
| JP2009535850A (en) * | 2006-05-04 | 2009-10-01 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Ion implantation for improved field effect transistors combined with in situ or ex situ heat treatment (method of manufacturing FET devices and FET devices) |
-
1989
- 1989-02-17 JP JP3863989A patent/JPH02218123A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005533384A (en) * | 2002-07-18 | 2005-11-04 | コミツサリア タ レネルジー アトミーク | Method for transporting electrically active thin films |
| JP2009535850A (en) * | 2006-05-04 | 2009-10-01 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Ion implantation for improved field effect transistors combined with in situ or ex situ heat treatment (method of manufacturing FET devices and FET devices) |
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