JPH02214701A - Plasma polymerization reactor - Google Patents
Plasma polymerization reactorInfo
- Publication number
- JPH02214701A JPH02214701A JP3449389A JP3449389A JPH02214701A JP H02214701 A JPH02214701 A JP H02214701A JP 3449389 A JP3449389 A JP 3449389A JP 3449389 A JP3449389 A JP 3449389A JP H02214701 A JPH02214701 A JP H02214701A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- plasma polymerization
- organic reactive
- reactive substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006116 polymerization reaction Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000126 substance Substances 0.000 claims abstract description 23
- 230000005284 excitation Effects 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims description 17
- 230000008020 evaporation Effects 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 abstract description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011261 inert gas Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003541 multi-stage reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Polymerisation Methods In General (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、プラズマ重合反応装置に同するものである
。さらに詳しくは、この発明は、有機分子の重合膜を高
効率に、付着強度が大きく、かつ光学特性、物理的特性
の良好なものとして形成することのできるプラズマ重合
反応装置に関するものであるや
（従来の技術とその課ｊｊ！ ＞
従来より、メタン、エタン、エチ１／ン等の炭化水素５
あるいは炭素化合物、さらには有機ポリマーを気相でプ
ラズマ励起状態で反応させる。二とにより、これらの分
子が重合した重合膜を基板」−に成膜する方法が知られ
ている。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a plasma polymerization reaction apparatus. More specifically, the present invention relates to a plasma polymerization reaction apparatus capable of forming a polymerized film of organic molecules with high efficiency, high adhesion strength, and good optical and physical properties. Conventional technology and its challenges jj! > Conventionally, hydrocarbons such as methane, ethane, and ethyl 5
Alternatively, carbon compounds or even organic polymers are reacted in the gas phase in a plasma-excited state. A method of forming a polymer film in which these molecules are polymerized on a substrate is known.
このようなグラズマ重合農は、金属や組機物の薄膜に比
べて、光学機能、表面反応性７耐摩耗性等の諸物性に特
徴があり、今後の薄膜技術の産業的展開として大いに期
待されているものである。This type of glazma polymerization has physical properties such as optical function, surface reactivity, and abrasion resistance compared to thin films made of metals or composite materials, and is highly anticipated as a future industrial development of thin film technology. It is something that
しかしながら、これまでの方法によっては今後の展開が
難しいと思われるいくつかの課題が残さ。However, there are still some issues that may be difficult to develop in the future depending on the methods used so far.
れているのが実状である。すなわち、これまでに知られ
ている平行平板方式やホロカソード法等のプラズマ反応
装置とこれを用いた方法の場合には、プラズマ重合反応
が不安定であって、その制御や均一な重合膜の形成が難
しく、しかも反応効率が良好でないという問題があった
。またさらに、これまでの方法では、反応装置の内壁面
部への重合物等の付着が著しいという実用上の大きな問
題があった。The reality is that In other words, in the case of plasma reactors and methods using them, such as the parallel plate method and the hollow cathode method known so far, the plasma polymerization reaction is unstable, and it is difficult to control it and form a uniform polymerized film. There were problems in that it was difficult to react and the reaction efficiency was not good. Furthermore, the conventional methods have had a major practical problem in that polymers and the like are significantly attached to the inner wall surface of the reactor.
これらのことは、これまでの低温プラズマ反応のための
装置と方法とが、金属や無機物の薄膜形成にウェイトを
置いて開発されてきたものであったため、有機分子の反
応に適切に対応した構成になっていないという理由によ
るものである。This is because the devices and methods for low-temperature plasma reactions to date have been developed with emphasis placed on forming thin films of metals and inorganic materials, so it is necessary to develop structures that appropriately respond to reactions with organic molecules. This is because it is not.
この発明は、以上の通りの事情に鑑みてなされたもので
あり、これまでのプラズマ反応装置の欠点を改善し、有
機化合物の低温プラズマ励起による重合反応に適した新
しい反応装置を提供することを目的としている。This invention was made in view of the above circumstances, and aims to improve the shortcomings of conventional plasma reaction devices and provide a new reaction device suitable for polymerization reactions of organic compounds by low-temperature plasma excitation. The purpose is
（課題を解決するための手段）
この発明は、上記の課題を解決するものとして、被成膜
基板の蒸着部表面を囲むように励起用電極を配設してな
ることを特徴とする有機反応性物質の重合膜を生成させ
るプラズマ重合反応装置を提供する。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides an organic reaction method characterized in that excitation electrodes are disposed so as to surround the surface of the evaporation part of a substrate to be film-formed. Provided is a plasma polymerization reaction device for producing a polymerized film of a chemical substance.
また、この発明は、上記の構成に加えて、被成膜基板お
よび／またはその周囲を囲むシールド部を設け、これら
にバイアス電界を印加することや、蒸発源近傍に高周波
励起コイルを設けて重合膜を製造することなどを特徴と
する反応装置をも提供するものである。In addition to the above configuration, the present invention also provides a shield portion surrounding the substrate to be film-formed and/or its periphery, applies a bias electric field thereto, and provides a high-frequency excitation coil near the evaporation source to perform polymerization. A reactor is also provided for producing a membrane.
添付した図面は、この発明の装置の一実施例を示したも
のである。この図面に沿って、次に評しくこの発明につ
いて説明する。The attached drawing shows an embodiment of the device of the invention. The present invention will now be described in detail with reference to the drawings.
この発明のプラズマ重合反応装置は、たとえば第１図に
示したように、真空チャンバー（１）内に、基板ホルダ
ー（２）を介して基板（３）を配置し、この基板（３）
の周囲およびその下部近傍を囲むように励起電極として
のコイル状高周波電極（４）を設けている。In the plasma polymerization reaction apparatus of the present invention, for example, as shown in FIG. 1, a substrate (3) is placed in a vacuum chamber (1) via a substrate holder (2), and the substrate (3)
A coiled high-frequency electrode (4) as an excitation electrode is provided so as to surround the periphery and the vicinity of the bottom thereof.
これまでに知られている高周波グロー放電によるプラズ
マ反応装置においては、プラズマＣＶＤ、あるいはイオ
ンブレーティング等のいずれの反応の場合にも、コイル
状高周波電極は、基板よりも距離を置いて配置するのが
普通であったが、こ、の発明においては、基板（３）の
周囲を囲むようにこのコイル状高周波電＠（４）を配置
している。In plasma reaction devices using high-frequency glow discharge that have been known so far, the coiled high-frequency electrode is placed at a distance from the substrate, regardless of whether the reaction is plasma CVD or ion blating. However, in this invention, this coiled high frequency electric wire (4) is arranged so as to surround the periphery of the substrate (3).
このことが一つの大きな特徴である。This is one major feature.
また、この第１図に示したように、基板（３）の周囲に
は、コイル状高周波電極（４）をも囲むように、シール
ド（５）を設けてもいる。そして、このシールド（５）
には、基板（３）とともに、もしくは単独に、直流バイ
アス電界を印加できるようにしている。Further, as shown in FIG. 1, a shield (5) is provided around the substrate (3) so as to also surround the coiled high frequency electrode (4). And this shield (5)
A DC bias electric field can be applied to the substrate (3) together with the substrate (3) or alone.
真空チャンバー（１）には、真空排気系（６）とともに
、ガス状の有機反応性物質を導入するためガス導入系（
７）およびアルゴン等の不活性ガス導入系（８）を設け
、さらに必要に応じて使用することのできる蒸発源ハー
ス（９）とその近傍の高周波励起コイル（１０）とを設
けてもいる。In addition to the vacuum evacuation system (6), the vacuum chamber (1) is equipped with a gas introduction system (
7) and an inert gas introduction system (8) such as argon, and an evaporation source hearth (9) that can be used as needed and a high frequency excitation coil (10) in its vicinity.
たとえば以上のような構成からなるこの発明のプラズマ
重合反応装置においては、１ｘｔｏ−’■０「「〜Ｉ
Ｘ １０−”Ｔｏｒｒ程度にまで真空チャンバー（１）
内を真空排気した後に、アルゴン、ヘリウム等の不活性
ガスを導入し、または導入することなく、ガス導入系（
７）、より有機反応性物質を導入する。この時のガス圧
は、目的とする成膜反応に応じて、たとえばＩ Ｘ １
０−’Ｔｏｒｒ〜数Ｔｏｒｒ程度に調節する。For example, in the plasma polymerization reaction apparatus of the present invention having the above configuration, 1xto-'■0''~I
Vacuum chamber (1) to about X 10-” Torr
After evacuating the inside, the gas introduction system (
7), introducing more organic reactive substances; The gas pressure at this time varies depending on the intended film-forming reaction, for example, I
Adjust to about 0-'Torr to several Torr.
次いでコイル状高周波電極（４）を介してグロー放電を
生起させ有機反応性物質を励起し、基板（３）の表面に
これら物質の重合膜を形成する。Next, a glow discharge is generated through the coiled high-frequency electrode (4) to excite the organic reactive substances, and a polymer film of these substances is formed on the surface of the substrate (3).
有機反応性物質としては、メタン、エタン、エチレン、
アセチレン等の炭化水素、アクリレート、メタクリレー
ト、ハロゲン化炭化水素、その他の官能性化合物、ポリ
アクリレート、ポリカーボネート等のポリマー蒸発分子
、あるいはその水素、窒素、アンモニア等との混合物を
ガス状で使用することができ、目的とする重合膜に対応
して、これら物質は１種または２種以上とすることがで
きる。Organic reactive substances include methane, ethane, ethylene,
Hydrocarbons such as acetylene, acrylates, methacrylates, halogenated hydrocarbons, other functional compounds, polymer vaporized molecules such as polyacrylates and polycarbonates, or their mixtures with hydrogen, nitrogen, ammonia, etc. can be used in gaseous form. Depending on the desired polymer film, these substances may be used alone or in combination of two or more.
これらの有機反応性物質は、この発明の装置においては
基板（３）の表面もしくはその近傍においてコイル状高
周波電＄１ｉ（４）を介してのグロー放電により励起さ
れ、基板（３）の表面において急速に反応して重合膜を
生成する。基板（３）とグロー放電による励起領域とに
距離がある場合には、この反応性には分子によって大き
な差異が生じ、反応の制御はもちろんのこと、均質な重
合膜の形成が困籠となる。In the device of the present invention, these organic reactive substances are excited by glow discharge via a coiled high-frequency electric wire (4) at or near the surface of the substrate (3), and are excited at the surface of the substrate (3). Reacts rapidly to produce a polymeric film. If there is a distance between the substrate (3) and the region excited by glow discharge, this reactivity will vary greatly depending on the molecule, making it difficult not only to control the reaction but also to form a homogeneous polymer film. .
この発明によってはじめて均質な、かつ均一厚みと付着
強度の良好なプラズマ重合膜が得られる。By this invention, for the first time, a homogeneous plasma polymerized film having a uniform thickness and good adhesion strength can be obtained.
この反応に際して、基板（３）および／またはシールド
（５）に直流バイアス電界を印加すると、さらに反応は
効率的に進行する。なお、この電界の印加については、
有機反応性物質は正または負イオンになることがあるた
め、基板（３）および／またはシールド（５）が負また
は正になるように切換できることが好ましい、もちろん
使用する有機反応性物質が特定のものに限られる場合に
は、いずれか一方に設定しておくことができる。During this reaction, if a DC bias electric field is applied to the substrate (3) and/or the shield (5), the reaction will proceed more efficiently. Regarding the application of this electric field,
Since organic reactive substances can be positive or negative ions, it is preferable that the substrate (3) and/or the shield (5) can be switched to be negative or positive, depending of course on the particular organic reactive substance used. If it is limited to one or the other, it can be set to either one.
なお、シールド（５）の存在は、プラズマ重合反応にお
いて従来は避けられなかった装置壁面への重合物等の付
着を抑止するために極めて有効である。この付着物の生
成を抑止できることの実用上の価値は大きい、このシー
ルド（５）の存在によって、プラズマ重合反応は、基板
（３）の表面域において集中的に生起するように促され
る。The presence of the shield (5) is extremely effective in suppressing adhesion of polymers, etc. to the walls of the apparatus, which was conventionally unavoidable in plasma polymerization reactions. The ability to suppress the formation of this deposit is of great practical value, and the presence of this shield (5) encourages the plasma polymerization reaction to occur intensively in the surface area of the substrate (3).
また、この発明の反応装置においては、有機反応性物質
は、真空チャンバー（１）の外部よりガス状で導入する
方法とともに、蒸発源ハース（９）等を用いて、真空チ
ャンバー（１）内において蒸発させるようにしてもよい
４この場合には、たとえば、ポリアクリレート、ポリカ
ーボネートなどの重合物、あるいは金属、合金、無機物
等を、抵抗加熱、誘導加熱、その他の手段によって蒸発
させることもできる。In addition, in the reaction apparatus of the present invention, the organic reactive substance is introduced in a gaseous form from outside the vacuum chamber (1), and is also introduced into the vacuum chamber (1) using an evaporation source hearth (9) or the like. In this case, for example, polymers such as polyacrylates and polycarbonates, metals, alloys, inorganic substances, etc. can be evaporated by resistance heating, induction heating, or other means.
蒸発源より蒸発を行わせる場合には、第１図に示したよ
うに、蒸発源ハース（９）に蒸発源物質を入れ、その上
部近傍に設けた高周波励起コイル（１０）によりグロー
放電を生起させることが有利である。大きなイオン化率
が実現される。When evaporating from an evaporation source, as shown in Figure 1, the evaporation source material is placed in the evaporation source hearth (9), and a glow discharge is generated by a high frequency excitation coil (10) installed near the top of the evaporation source hearth. It is advantageous to let A large ionization rate is achieved.
蒸発源物質として、Ａｕ 、 Ａｇ、 Ｔ Ｉ 、 Ａ
ｊ 。Au, Ag, T I, A as evaporation source substances
j.
Ｃｕ、Ｗ、Ｃｒ、Ｎｉ、その他金属または合金、酸化物
等の無機物を用い、有機反応性物質との複合膜や水素、
窒素、アンモニア等の複合反応膜、さらには多層膜を効
率的に形成することも可能となる。Using Cu, W, Cr, Ni, other metals or alloys, inorganic materials such as oxides, composite films with organic reactive substances, hydrogen,
It is also possible to efficiently form a composite reaction film of nitrogen, ammonia, etc., and even a multilayer film.
いずれの物質を用いる場合にも、この発明の装置によっ
て、有機反応性物質の重合反応を促進するグロー放電と
それによる励起は、基板（３）の表面域に集中し、均質
、均一なプラズマ重合膜の生成が高効率で可能となる。No matter which substance is used, the apparatus of the present invention allows the glow discharge that promotes the polymerization reaction of the organic reactive substance and the resulting excitation to be concentrated on the surface area of the substrate (3), resulting in homogeneous and uniform plasma polymerization. It becomes possible to generate a film with high efficiency.
しかも、この発明のコイル状高周波を極（４）さらにシ
ールド（５）の特徴ある配置によって重合物等の反応装
置壁面への付着も効果的に抑止される。Furthermore, due to the characteristic arrangement of the coiled high frequency pole (4) and the shield (5) of the present invention, adhesion of polymers and the like to the wall surface of the reactor is effectively suppressed.
もちろん、この発明は、第１図に示した例に限定される
ものではない、たとえば第２図に示したように、第１図
のコイル状高周波電極（４）に代えて曲面状電極〈１１
）を基板（３）に対して垂設し、交流、交番、直流、マ
イクロ波等によって放電を生成させてもよい。Of course, the present invention is not limited to the example shown in FIG. 1. For example, as shown in FIG. 2, a curved electrode (11
) may be vertically disposed with respect to the substrate (3), and electric discharge may be generated by alternating current, alternating current, direct current, microwave, or the like.
実施例１
第１図に示した装置を用いてポリカーボネートの重合膜
を形成した。蒸着真空室内の真空度は３ ｘ １０−’
Ｔｏｒｒとした。Example 1 A polycarbonate polymer film was formed using the apparatus shown in FIG. The degree of vacuum in the deposition vacuum chamber is 3 x 10-'
Torr.
蒸発源にポリカーボネートを用い、その近傍の高周波励
起コイル（１０）を１５０Ｗで放電させた。なお、ハー
スは抵抗加熱によって３００℃に加熱した。Polycarbonate was used as the evaporation source, and a high frequency excitation coil (10) nearby was discharged at 150W. Note that the hearth was heated to 300° C. by resistance heating.
また、基板（３）の周囲の高周波励起用のコイル状電極
を２００Ｗで放電させた。Further, a coiled electrode for high frequency excitation around the substrate (3) was discharged at 200W.
基板表面にはポリカーボネートのプラズマ重合膜が形成
された。A plasma polymerized polycarbonate film was formed on the surface of the substrate.
安定した反応によって重合膜が得られ、その付着強度は
良好であり、また、装置の内壁部への汚れの付着も認め
られなかった。A polymer film was obtained through a stable reaction, and its adhesion strength was good, and no dirt was observed to adhere to the inner wall of the device.
実施例２
実施例１と同様にして別の蒸発源からＴｉを蒸発させた
。ＴＩとポリカーボネートとの混合膜が得られた。Example 2 Ti was evaporated from another evaporation source in the same manner as in Example 1. A mixed film of TI and polycarbonate was obtained.
実施例３
蒸発源を使用することなく、第１図の装置を用いて、エ
チレンガスを導入してプラズマ重合を行った。Example 3 Plasma polymerization was carried out by introducing ethylene gas using the apparatus shown in FIG. 1 without using an evaporation source.
硬質の重合膜が得られた。A hard polymer film was obtained.
装置内壁部への汚れの付着はなかった。There was no dirt attached to the inner wall of the device.
実施例４
第２図の装置を用い、交流電圧を印加して放電させ、メ
タンと水素とからアモルファス状カーボン膜を形成した
。Example 4 Using the apparatus shown in FIG. 2, an amorphous carbon film was formed from methane and hydrogen by applying an alternating current voltage and causing discharge.
安定した重合が行われ、汚れの付着もなかった。Stable polymerization was performed, and no stains were attached.
第１図および第２図は、各々、この発明の装置例を示し
た断面図である。
１・・・真空チャンバー
２・・・基板ホルダー
３・・・基板
４・・・コイル状高周波電極
５・・・シールド
６・・・真空排気系
７・・・ガス導入系
８・・・不活性ガス導入系
９・・・蒸発源ハース
１０・・・高周波励起コイル
１１・・・曲面状電極FIG. 1 and FIG. 2 are sectional views each showing an example of the device of the present invention. 1... Vacuum chamber 2... Substrate holder 3... Substrate 4... Coiled high frequency electrode 5... Shield 6... Vacuum exhaust system 7... Gas introduction system 8... Inert Gas introduction system 9...Evaporation source hearth 10...High frequency excitation coil 11...Curved electrode
Claims (5)
を配設してなることを特徴とする有機反応性物質の重合
膜を生成させるプラズマ重合反応装置。(1) A plasma polymerization reaction apparatus for producing a polymerized film of an organic reactive substance, characterized in that an excitation electrode is arranged so as to surround the surface of a vapor deposition part of a film-forming substrate.
は無機物を蒸発させて複合膜および／または多層膜を形
成する請求項（１）記載のプラズマ重合反応装置。(2) The plasma polymerization reaction apparatus according to claim (1), wherein a composite film and/or a multilayer film is formed by evaporating a metal, an alloy, or an inorganic substance together with the introduction of an organic reactive substance.
１）または（２）記載のプラズマ重合反応装置。(3) A claim in which the organic reactive substance is evaporated from an evaporation source (
The plasma polymerization reaction apparatus according to 1) or (2).
ド部を設け、このシールド部にバイアス電界を印加する
請求項（１）、（２）または（３）記載のプラズマ重合
反応装置。(4) The plasma polymerization reaction apparatus according to claim (1), (2) or (3), wherein a shield portion is provided to surround the substrate to be film-formed and/or its periphery, and a bias electric field is applied to the shield portion.
、（２）、（３）または（４）記載のプラズマ重合反応
装置。(5) Claim (1) in which a high frequency electrode is provided near the evaporation source.
, (2), (3) or (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034493A JP2911127B2 (en) | 1989-02-14 | 1989-02-14 | Plasma polymerization reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034493A JP2911127B2 (en) | 1989-02-14 | 1989-02-14 | Plasma polymerization reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02214701A true JPH02214701A (en) | 1990-08-27 |
| JP2911127B2 JP2911127B2 (en) | 1999-06-23 |
Family
ID=12415774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1034493A Expired - Lifetime JP2911127B2 (en) | 1989-02-14 | 1989-02-14 | Plasma polymerization reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2911127B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5772851A (en) * | 1993-11-25 | 1998-06-30 | Basf Aktiengesellschaft | Elimination of volatile residues from polyacrylate melts |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101365467B1 (en) | 2012-04-24 | 2014-02-24 | 한국표준과학연구원 | Thin Film Deposition Apparatus and Thin Film Deposition Method |
-
1989
- 1989-02-14 JP JP1034493A patent/JP2911127B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5772851A (en) * | 1993-11-25 | 1998-06-30 | Basf Aktiengesellschaft | Elimination of volatile residues from polyacrylate melts |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2911127B2 (en) | 1999-06-23 |
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