JPH022121A - Wiring pattern - Google Patents

Abstract

PURPOSE:To form a pattern so that no burnout may result due to narrowing by making the width of a second wiring pattern opposing to a protruded bent part of a first wiring pattern to be larger than others and the width of crossed part of an upper-layer wiring pattern crossing a lower-layer wiring pattern to be larger than others when forming wiring on an integrated circuit. CONSTITUTION:Wiring width of bent parts a, b and c of wiring patterns 101, 102 and 103 formed on a mask is made larger than that of other wiring width. Also, 201, 202 and 203 are lower-layer wiring patterns formed on the mask and 204, 205 and 206 are upper-layer wiring patterns formed on the lower-layer wiring patterns 201, 202 and 203 through an interlayer insulation film. The wiring width of crossed parts d, e and f of the upper-layer wiring patterns 204, 205 and 206 crossing the lower-layer wiring patterns 201, 202 and 203 is made larger than other wiring width. By forming a wiring pattern so that the wiring width where narrowing results is made larger than other wiring width, no burnout may result even if narrowing is produced on pattern transfer.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to wiring patterns used in integrated circuit devices.

Conventional technologyIn recent years, vy! With advances in fine processing technology, the number and length of wires included in a bond collection circuit has become enormous.

In order to reduce the cost of integrated circuit devices, it is necessary to improve the yield of integrated circuit devices, and one of the means for achieving this is to form wiring so that it does not break.

The conventional wiring pattern will be explained below.

3 and 6 are diagrams showing conventional wiring patterns.

In FIG. 3, 301, 302, and 303 are wiring patterns on the mask, each having convex bent portions A, B, C, and D as shown in the figure.

In FIG. 6, 501, 502, 503 are lower layer wiring patterns formed on the mask, 604, 505, 503, 501, 502, 503 are lower layer wiring patterns formed on the mask.
Reference numeral 506 denotes an upper layer wiring pattern formed on the lower layer wiring patterns 501, 502, and 503 via an interlayer insulating film.

After forming the wiring pattern on the mask as shown in FIGS. 3 and 6, the wiring is incorporated into the integrated circuit through a pattern transfer process.

Problems to be Solved by the Invention However, it has been found that current dormitories with the above-mentioned conventional structure are seen as shown below.

In other words, when the Bakun transfer process is performed using the wiring pattern shown in FIG. 3, the wiring pattern 401.40 becomes thinner as shown in FIG.
2.403, and according to the wiring pattern in FIG. 6, the lower layer wiring pattern (e.g. 601) and the upper layer wiring pattern (e.g. 604) intersect and a pongee occurs in the part where there is a step, as shown in FIG. A phenomenon can be seen.

There is a problem in that the thinning that occurs in the wiring pattern as described above causes wire breakage and reduces the yield of integrated circuit devices.

The present invention solves the above-mentioned conventional problems, and aims to provide a wiring pattern that prevents wire breakage due to thinning when forming wires on an integrated circuit.

Means for Solving the Problems In order to achieve the above object, the wiring pattern of the present invention has the following configurations (1) and (2).

(1) It has a first wiring pattern and a second wiring pattern, and the width of the second wiring pattern facing the convex bent portion of the first wiring pattern is made larger than the other wiring patterns.

b)) The width of the intersection of the upper hΔ wiring pattern that intersects with the lower layer wiring pattern is made larger than the width of the other parts.

Effect When pattern transfer is performed using the configurations (1) and (2) above, the wiring width of the portion where the thinning occurs is formed to be larger than the other wiring widths, so there is no fear of wire breakage.

EXAMPLE An example of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a wiring pattern in a first embodiment of the present invention.

In FIG. 1, reference numerals 101, 102, and 103 are wiring patterns formed on the mask, and the wiring widths of the bent portions A, B, and B are formed to be larger than the width of the other wiring patterns.

FIG. 2 is a diagram showing a wiring pattern in a second embodiment of the present invention.

In FIG. 2, 201.202.203 are lower layer wiring patterns formed on the mask, 204.205.
Reference numeral 206 indicates an upper layer wiring pattern formed on the lower layer wiring patterns 201, 202, and 203 via an interlayer insulating film.

Here, upper layer wiring patterns 204 and 205 intersect with lower layer wiring patterns 201, 202, and 203.

The wiring widths of the crossing portions 206, 206, and 206 are formed to be larger than the other wiring widths.

As shown in Figures 1 and 2, by forming a wiring pattern so that the wiring width at the part where the thinning occurs is larger than the other wiring widths, there is no risk of wire breakage even if the thinning occurs during pattern transfer. There isn't.

As described above, the present invention provides an integrated circuit device that prevents disconnection by using an extremely easy method of making the wiring width of a portion where thinning may occur in the formation of a wiring pattern larger than other wiring widths. This makes it possible to realize an excellent wiring pattern that can improve the yield.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the wiring pattern in the first embodiment of the present invention, FIG. 2 is a diagram showing the wiring pattern in the second embodiment of the invention, and FIGS. 3 and 6 are conventional wiring patterns. FIGS. 4 and 6 are pattern diagrams for explaining the thinning phenomenon caused by conventional wiring patterns. 101-103...Wiring pattern, a...
...Bending portion, 201-203...Lower layer wiring pattern, 204-206...Upper layer wiring pattern, Force--...Intersection portion. Name of agent: Patent attorney Toshio Nakao and one other person

Claims (2)

[Claims] (1) A wiring having a first and a second wiring pattern, wherein the width of the second wiring pattern facing the convex bent portion of the first wiring pattern is larger than that of the other wiring patterns. pattern. (2) A wiring pattern characterized in that the width of the intersecting portion of the upper layer wiring pattern that intersects with the lower layer wiring pattern is larger than that of the other portions.