JPH02209473A - Film forming device - Google Patents

Film forming device

Info

Publication number
JPH02209473A
JPH02209473A JP3133389A JP3133389A JPH02209473A JP H02209473 A JPH02209473 A JP H02209473A JP 3133389 A JP3133389 A JP 3133389A JP 3133389 A JP3133389 A JP 3133389A JP H02209473 A JPH02209473 A JP H02209473A
Authority
JP
Japan
Prior art keywords
holder member
chamber
substrate
gas
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3133389A
Other languages
Japanese (ja)
Inventor
Suguru Nakamura
英 中村
Mitsuo Sasaki
光夫 佐々木
Junichi Kinoshita
純一 木下
Minoru Yamada
穣 山田
Akira Murase
村瀬 暁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3133389A priority Critical patent/JPH02209473A/en
Publication of JPH02209473A publication Critical patent/JPH02209473A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a film having a good adhesive property at a high film forming speed by providing a container for housing a material to be deposited by evaporation, a holder member for a substrate, a laser light irradiating means, a gas injecting means and an ion forming and accelerating means in a vacuum chamber. CONSTITUTION:Gas, such as N2, is injected from a cylinder 17 toward the inside surface of a window 14 for transmission of laser light 24 from the ejection hole on the inner peripheral surface of an annular gas ejecting member 15 and a glow discharge is generated between an electrode 19 and the holder member 3 to ionize the gas supplied into a vacuum chamber 1. The powdery material 23 to be deposited by evaporation in the container 4 is irradiated with the laser light 24 through the transmission window 14 to melt and evaporate the mateiral. The gas of the material 23 is sucked and deposited on the substrate 22 on the holder member 3 by the voltage gradient between the holder member 3 and the electrode 19. by which the film is formed. The gaseous N2 or the like is injected from the above-mentioned member 15 to the inside surface of the window 14, by which the deposition of the material 23 on the inside surface of the window 14 is suppressed and the deposition rate of the material 23 on the substrate 22 is maintained in a high state over a long period of time.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、膜形成装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a film forming apparatus.

(従来の技術) 従来の膜形成装置としては、真空チャンバと、このチャ
ンバ内に配置され、粉末状蒸着物質が収容された容器と
、前記チャンバ内の前記容器の上方に対向して配置され
、膜形成される基板を保持するためのホルダ部材と、前
記チャンバの壁部に設けられたレーザ光透過窓を通して
前記容器内の粉末状蒸着物質にレーザ光を照射して溶融
、蒸気化するためのレーザ光発振器とから構成されるも
のが知られている。かかる膜形成装置によれば、ホルダ
部祠の下面に基板等を保持し、レーザ光を透過窓を通し
て容器内の粉末状蒸着物質に照射し、溶融、蒸気化する
ことにより基板上に蒸着物質の薄膜を堆積するものであ
る。
(Prior Art) A conventional film forming apparatus includes a vacuum chamber, a container disposed within the chamber and containing a powdered vapor deposition material, and disposed facing above the container in the chamber, a holder member for holding a substrate on which a film is to be formed; and a holder member for melting and vaporizing the powdered deposition material in the container by irradiating laser light through a laser light transmission window provided on the wall of the chamber. There are known devices that are composed of a laser beam oscillator. According to such a film forming apparatus, a substrate or the like is held on the lower surface of the holder part shrine, and a laser beam is irradiated to the powdered vapor deposition material in the container through the transmission window to melt and vaporize the vapor deposition material on the substrate. It deposits a thin film.

しかしながら、上述した膜形成装置で基板上に堆積され
た薄膜は該基板に対する密着性が劣るという問題があっ
た。また、レーザ光を真空チャンバ壁部に設けた透過窓
を通してチャンバ内に照射する際、前記蒸気化した物質
が透過窓内面にも堆積され、レーザ光の透過度合を低下
させる。その結果、レーザ光による蒸着物質の溶融、蒸
気化が阻害され、ひいては基板表面への蒸着物質の堆積
速度が低下するという問題があった。
However, there is a problem in that the thin film deposited on the substrate by the above-mentioned film forming apparatus has poor adhesion to the substrate. Further, when laser light is irradiated into the chamber through a transmission window provided in the wall of the vacuum chamber, the vaporized substance is also deposited on the inner surface of the transmission window, reducing the degree of transmission of the laser light. As a result, there is a problem in that the melting and vaporization of the vapor deposited material by the laser beam is inhibited, and as a result, the deposition rate of the vapor deposited material on the substrate surface is reduced.

(発明が解決しようとする課題) 本発明は、上記従来の課題を解決するためになされたも
ので、基板に対して密着性の良好な被膜を高い成膜速度
で形成し得る膜形成装置を提供しようとするものである
(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned conventional problems, and provides a film forming apparatus that can form a film with good adhesion to a substrate at a high film formation rate. This is what we are trying to provide.

[発明の構成コ (課題を解決するための手段) 本発明は、真空チャンバと、このチャンバ内に配置され
、粉末状蒸着物質が収容された容器と、前記チャンバ内
に配置され、膜形成される基板を保持するためのホルダ
部材と、前記チャンバの壁部に設けられたレーザ光透過
窓を通して前記容器内の粉末状蒸着物質にレーザ光を照
射して溶融、蒸気化するためのレーザ光照射手段と、前
記透過窓近傍のチャンバ壁部に設けられ、ガスを該透過
窓の内面に向けて噴射するためのガス噴射手段と、前記
チャンバ内に配置され、前記レーザ光の照射により溶融
、蒸気化された蒸着物質を前記ホルダ部材との間でイオ
ン化すると共に、そのイオン物質をホルダ部材上の基板
に加速させるためのイオン生成・加速手段とを具備した
ことを特徴とする膜形成装置である。
[Configuration of the Invention (Means for Solving the Problems) The present invention includes a vacuum chamber, a container disposed within the chamber and containing a powdered vapor deposition material, and a vacuum chamber disposed within the chamber containing a powdered vapor deposition material. a holder member for holding a substrate, and a laser beam irradiation for melting and vaporizing the powdered vapor deposition material in the container by irradiating the powdered material in the container with a laser beam through a laser beam transmission window provided on the wall of the chamber. a gas injection means provided on the chamber wall near the transmission window for injecting gas toward the inner surface of the transmission window; and a gas injection means disposed within the chamber for causing melting and vaporization by irradiation with the laser beam. The film forming apparatus is characterized by comprising an ion generation/acceleration means for ionizing the evaporated substance between the holder member and the holder member, and accelerating the ion substance to the substrate on the holder member. .

(作 用) 本発明によれば、真空チャンバ内にレーザ光の照射によ
り溶融、蒸気化された蒸着物質をホルダ部材との空間で
イオン化すると共に、そのイオン物質を前記ホルダ部材
上の基板に加速させるためのイオン生成・加速手段を配
置することによって、溶融、蒸気化された蒸着物質を基
板に対して密着性よく形成できる。また、レーザ光透過
窓近傍のチャンバ壁部にガス噴射手段を設け、該噴射手
段からガスを該透過窓の内面に向けて噴射することによ
って、レーザ光を真空チャンバ壁部に設けた透過窓を通
してチャンバ内に照射する際、蒸気化された蒸着物質か
透過窓内面に堆積するのを抑制できる。その結果、透過
窓を通してチャンバ内に照射されるレーザ光の透過度合
が低下するのを抑制できるため、基板表面に被膜を高い
成膜速度で形成できる。
(Function) According to the present invention, the deposition material melted and vaporized in the vacuum chamber by laser light irradiation is ionized in the space with the holder member, and the ionic material is accelerated to the substrate on the holder member. By arranging an ion generating/accelerating means for this purpose, the melted and vaporized deposition material can be formed with good adhesion to the substrate. Further, by providing a gas injection means on the chamber wall near the laser beam transmission window and injecting gas from the injection means toward the inner surface of the transmission window, the laser beam passes through the transmission window provided on the vacuum chamber wall. When irradiating the inside of the chamber, it is possible to suppress vaporized deposition substances from being deposited on the inner surface of the transmission window. As a result, it is possible to suppress a decrease in the degree of transmission of the laser light that is irradiated into the chamber through the transmission window, so that a film can be formed on the surface of the substrate at a high deposition rate.

(実施例) 以下、本発明の実施例を図面を参照して詳細に説明する
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

図中の1は、真空チャンバである。このチャンバー内に
は、パイプ状回転軸2により回転可能に支持されたホル
ダ部材3が配置されている。このホルダ部材3には、図
示しないヒータ及び冷却パイプが内蔵されている。また
、前記ホルダ部材3上の中心には粉末状蒸着物質を収容
するための容器4が固定されている。なお、前記容器4
に沸点の高い蒸着物質を収容し、膜形成を行なう場合に
は前記ホルダ部材3と容器4の間に断熱祠層を介在させ
る。前記回転軸2の下端は、前記チャンバ1下部に設け
た室5内に延出され、該室5内の回転軸2部分には傘歯
車6が軸着されている。この傘歯車6には、傘歯車7か
歯合され、かつ該傘歯車7にはモータ8により回転され
る駆動軸9が軸着されている。なお、前記ホルダ部材3
に内蔵された図示しないヒータは真空チャンバ1から室
5を経由したリード線を介してヒータ電源10に接続さ
れ、かつ前記ホルダ部材3に内蔵された図示しない冷却
パイプは前記パイプ状回転軸2を通して冷却系11に連
結されている。
1 in the figure is a vacuum chamber. A holder member 3 rotatably supported by a pipe-shaped rotating shaft 2 is arranged within this chamber. This holder member 3 has a built-in heater and cooling pipe (not shown). Further, a container 4 for accommodating a powdered vapor deposition material is fixed at the center of the holder member 3. Note that the container 4
When a vapor deposition substance having a high boiling point is housed in the container and a film is to be formed, a heat insulating layer is interposed between the holder member 3 and the container 4. The lower end of the rotating shaft 2 extends into a chamber 5 provided at the bottom of the chamber 1, and a bevel gear 6 is pivotally attached to a portion of the rotating shaft 2 within the chamber 5. A bevel gear 7 is meshed with the bevel gear 6, and a drive shaft 9 rotated by a motor 8 is rotatably attached to the bevel gear 7. Note that the holder member 3
A built-in heater (not shown) is connected to a heater power source 10 via a lead wire from the vacuum chamber 1 via the chamber 5, and a cooling pipe (not shown) built into the holder member 3 is connected to the heater power source 10 through a lead wire from the vacuum chamber 1 through the chamber 5. It is connected to the cooling system 11.

また、図中の12はレーザ光を放出するためのアルゴン
ガスレーザ発振器であり、この発振器12から放出され
たレーザ光の光路上には反射ミラー13が配置されてい
る。この反射ミラー13で反射されたレーザ光の光路上
の前記チャンバ1の上部壁部には、レーザ透過窓14が
設けられている。前記チャンバ1の壁部に設けられた前
記透過窓14には、環状のガス噴射部祠15が配置され
ており、かつ該ガス噴射部利15の内周面にはガス噴出
穴が開孔されている。前記ガス噴射部材工5には、ガス
供給管16の一端が連結され、か−’)Ar % 02
 、N2などノホンヘ17に連結されている。このボン
ベ17近傍の前記供給管16にはバルブ18が設けられ
ている。
Further, 12 in the figure is an argon gas laser oscillator for emitting laser light, and a reflecting mirror 13 is arranged on the optical path of the laser light emitted from this oscillator 12. A laser transmission window 14 is provided in the upper wall of the chamber 1 on the optical path of the laser light reflected by the reflection mirror 13. An annular gas injection part hole 15 is disposed in the transmission window 14 provided in the wall of the chamber 1, and a gas injection hole is formed in the inner peripheral surface of the gas injection part hole 15. ing. One end of a gas supply pipe 16 is connected to the gas injection member work 5, and
, N2, etc. are connected to Nohonhe 17. A valve 18 is provided in the supply pipe 16 near the cylinder 17.

更に、前記チャンバ1内の上部(=j近には電極19が
支柱20a 、 20bにより吊架されている。この電
極19には、該電極19に直流電圧を印加して電極19
と前記ホルダ部材3の間でグロー放電を起こさせるため
の図示しない直流電源が接続されている。なお、前記チ
ャンバ1の下部付近の壁部には排気管21が連結されて
おり、かつ該排気管21の他端には図示しない真空ポン
プが連結されている。
Further, an electrode 19 is suspended from support columns 20a and 20b near the upper part (=j) of the chamber 1.A DC voltage is applied to the electrode 19 to
A DC power source (not shown) is connected between the holder member 3 and the holder member 3 to cause glow discharge. An exhaust pipe 21 is connected to a wall near the bottom of the chamber 1, and a vacuum pump (not shown) is connected to the other end of the exhaust pipe 21.

次に、前述した膜形成装置の作用を説明する。Next, the operation of the film forming apparatus described above will be explained.

まず、ホルダ部材3上に複数の基板22を該部材3上に
固定された容器4から離して保持し、かつ容器4内に蒸
着物質23を収容した後、図示しない真空ポンプを作動
して真空チャンバ1内の主として空気、水蒸気などの不
要ガスを排気管21を通して排気し、チャンバ1内を所
定の真空度とする。
First, a plurality of substrates 22 are held on the holder member 3 away from the container 4 fixed on the member 3, and after accommodating the vapor deposition substance 23 in the container 4, a vacuum pump (not shown) is operated to create a vacuum. Unnecessary gases such as mainly air and water vapor in the chamber 1 are exhausted through the exhaust pipe 21, and the inside of the chamber 1 is brought to a predetermined degree of vacuum.

つづいて、モータ8を駆動して駆動軸9の傘歯車7と歯
合した傘歯車6を回転させ、該歯車6が軸着された回転
軸2に支持されたホルダ部材3を回転させ、ヒータ電源
10からホルダ部材3に内蔵したヒータ(図示せず)に
電力を供給して該部材3上の基板22を所望忍度に加熱
する。同時に、バルブ18を開けてボンベ17からAr
、O9、N2などのガスを供給管16を通して環状のガ
ス噴射部材15に供給し、その内周面の噴出穴からガス
を前記透過窓14内面に向けて噴射すると共に、図示し
ない直流電源から直流電圧をチャンバ1内の電極19及
び電極としいて機能するホルダ部材3の間に印加して該
電極19とホルダ部材3の間でグロー放電を起こさせ、
前記チャンバ1内に供給されたガスを活性、イオン化す
る。このような状態において、レーザ発振器12の発振
により放出させたレーザ光24を反射ミラー13での反
射させ、透過窓14を通してチャンバl内の前記容器4
内に収容した蒸着物質23に照射し、溶融、蒸気化する
。蒸気化した蒸着物質のガスは、ホルダ部材3と電極1
9との間の電圧勾配によってホルダ部材3上の基板22
に吸りされ、堆積されて被膜が形成される。
Next, the motor 8 is driven to rotate the bevel gear 6 meshed with the bevel gear 7 of the drive shaft 9, and the holder member 3 supported by the rotating shaft 2 to which the gear 6 is attached is rotated. Power is supplied from the power supply 10 to a heater (not shown) built in the holder member 3 to heat the substrate 22 on the member 3 to a desired temperature. At the same time, open the valve 18 and release Ar from the cylinder 17.
. Applying a voltage between the electrode 19 in the chamber 1 and the holder member 3 functioning as an electrode to cause glow discharge between the electrode 19 and the holder member 3;
The gas supplied into the chamber 1 is activated and ionized. In this state, the laser beam 24 emitted by the oscillation of the laser oscillator 12 is reflected by the reflection mirror 13 and passes through the transmission window 14 to the container 4 in the chamber 1.
The vapor deposition substance 23 contained therein is irradiated, melted, and vaporized. The gas of the vaporized vapor deposition substance is transferred to the holder member 3 and the electrode 1.
9 on the substrate 22 on the holder member 3 due to the voltage gradient between
is absorbed and deposited to form a film.

従って、本発明によればレーザ光24の蒸着物質23へ
の照射、溶融、蒸気化にを行なうと共に、基板22が保
持されたホルダ部材3と電極19の間にグロー放電を起
こさせてチャンバ1内に供給させたガスを活性化しイオ
ン化することによって、ホルダ部材3に保持された基板
22上にイオンで活性化された蒸気化した蒸着物質を堆
積できるため、基板22に対して密着性の優れた被膜を
形成できる。
Therefore, according to the present invention, the vapor deposition material 23 is irradiated with the laser beam 24, melted, and vaporized, and a glow discharge is caused between the holder member 3 holding the substrate 22 and the electrode 19, so that the chamber 1 By activating and ionizing the gas supplied into the holder member 3, a vaporized deposition substance activated by ions can be deposited on the substrate 22 held by the holder member 3, so that it has excellent adhesion to the substrate 22. It is possible to form a film that is

また、レーザ光24の粉末状蒸盾゛物質23への照射、
溶融、蒸気化に際してレーザ光24が透過する透過窓1
4の内面にガス噴射部拐15からガスを噴射することに
より、該透過窓14内面への蒸着物質の堆積を抑制でき
、レーザ光24の透過度合の低下を軽減できるため、前
記蒸着物質23に所定の出力のレザ光を照射でき、基板
22への蒸着物質の堆積速度を長期間に亙って高い状態
に維持できる。更に、前記透過窓14内面への蒸着物質
の堆積を抑制するためのガスをホルダ部材3と電極19
間のグロー放電時にイオンされ、蒸着物質を活性するた
めのガスや蒸着物質との反応ガスとして利用できる。
Further, irradiation of the powdered vapor shield material 23 with the laser beam 24,
Transmission window 1 through which laser light 24 passes during melting and vaporization
By injecting gas from the gas injection part 15 onto the inner surface of the transmission window 14, it is possible to suppress the deposition of the vapor deposition material on the inner surface of the transmission window 14, and to reduce the decrease in the transmittance of the laser beam 24. Laser light with a predetermined output can be irradiated, and the rate of deposition of the vapor deposited substance onto the substrate 22 can be maintained at a high state for a long period of time. Further, a gas is supplied to the holder member 3 and the electrode 19 to suppress the deposition of the vapor deposition substance on the inner surface of the transmission window 14.
It is ionized during glow discharge during the process and can be used as a gas for activating the deposition material or as a reaction gas with the deposition material.

上述した本発明の膜形成装置の特徴から以下に列挙する
被膜を高い堆積速度で形成できる。
Due to the features of the film forming apparatus of the present invention described above, the following films can be formed at a high deposition rate.

■、粉末状蒸着物質としてMo粉末を、電極への直流電
圧の印加を1〜2kV、レーザ出力(CW)を800W
としてレーザ照射を行なうことにより、ホルダ部材上の
ガラスやステンレス製の基板にMo膜を数100人/m
inの速度で形成できる。
(2) Mo powder was used as the powder vapor deposition material, DC voltage was applied to the electrodes at 1 to 2 kV, and the laser output (CW) was 800 W.
By performing laser irradiation as
It can be formed at a speed of in.

■、粉末状蒸着物質としてAΩ粉末を、電極への直流電
圧の印加を1〜2kV、チャンバ内に供給するガスを酸
素ガス、レーザ出力(CW)を800Wとすることによ
り、ホルダ部材上のガラスやステンレス製の基板にAJ
7203膜を数100人/minの速度で形成できる。
(2) By using AΩ powder as the powder vapor deposition material, applying a DC voltage of 1 to 2 kV to the electrode, oxygen gas as the gas supplied into the chamber, and laser output (CW) of 800 W, the glass on the holder member is or AJ on a stainless steel board.
7203 film can be formed at a rate of several 100 people/min.

■、粉末状蒸着物質としてT1粉末を、電極への直流電
圧の印加を1〜2kV、チャンバ内に供給するガスを窒
素ガス、レーザ出力(CW)を800Wとすることによ
り、ホルダ部材上のガラスやステンレス製の基板にTi
N膜を数100人/1nの速度で形成できる。
(2) By applying T1 powder as the powdered vapor deposition material, applying a DC voltage of 1 to 2 kV to the electrode, nitrogen gas as the gas supplied into the chamber, and a laser output (CW) of 800 W, the glass on the holder member is heated. or Ti on a stainless steel substrate.
N films can be formed at a rate of several 100 people/1n.

■、粉末状蒸着物質としてYBCO系超電系材電導材料
粉末極への直流電圧の印加を1〜2kV。
(2) Applying a DC voltage of 1 to 2 kV to the YBCO-based superconducting material conductive material powder electrode as a powdered vapor deposition material.

チャンバ内に供給するガスを酸素ガス、CO。レーザ出
力をLOWとすることにより、ホルダ部材上のMg O
基板にYBCO系の酸素欠損状ペロブスカイト型超電導
膜をで形成できる。
The gases supplied into the chamber are oxygen gas and CO. By setting the laser output to LOW, MgO on the holder member
A YBCO-based oxygen-deficient perovskite superconducting film can be formed on a substrate.

なお、上記実施例においてレーザ光の蒸着物質への照射
に際し、反射ミラーを高速回動して蒸着物質に対してレ
ーザ光を全面に照射するようにしてもよい。
In the above embodiment, when irradiating the vapor deposition material with laser light, the reflection mirror may be rotated at high speed to irradiate the entire surface of the vapor deposition material with the laser light.

また、本発明の膜形成装置は上記実施例に示す構造に限
定されず、例えば第2図に示す構造としてもよい。即ち
、第2図の膜形成装置はチャンバ1内に回転可能な支持
棒25で支持された保持台26」二に粉末状蒸着物質が
収容される容器4を固定し、チャンバ1内に回転軸2に
より回転可能に支持されたホルダ部材3をチャンバ1側
面の壁部に平行して配置し、かつ前記チャンバ1内に電
極19を前記ホルダ部材3に対向するように支柱19a
 、 1.9bにより支持した構造になっている。かか
る構造の膜形成装置によれば、透過窓14内面へのガス
噴射部祠15からのガスの噴射、電極19への高電圧の
印1] 加によるホルダ部材3と電極19間のグロー放雷の発生
、レーザ光24の蒸着物質23への照射、溶融、蒸気化
により前述した第1図図示の実施例と同様、ホルダ部材
3に保持された基板22に密着性の良好な被膜を高い堆
積速度で形成することが可能となる。
Further, the film forming apparatus of the present invention is not limited to the structure shown in the above embodiment, but may have a structure shown in FIG. 2, for example. That is, in the film forming apparatus shown in FIG. 2, a container 4 containing a powdered vapor deposition material is fixed to a holding table 26 supported by a rotatable support rod 25 in a chamber 1, and a rotating shaft is installed in the chamber 1. A holder member 3 rotatably supported by a support member 2 is disposed parallel to a side wall of the chamber 1, and a support 19a is installed in the chamber 1 so that an electrode 19 is opposed to the holder member 3.
, 1.9b. According to the film forming apparatus having such a structure, the glow lightning between the holder member 3 and the electrode 19 is caused by the injection of gas from the gas injection part 15 onto the inner surface of the transmission window 14 and the application of high voltage to the electrode 19. By generating, irradiating, melting, and vaporizing the vapor deposition material 23 with the laser beam 24, a highly adhesive coating is deposited on the substrate 22 held by the holder member 3, as in the embodiment shown in FIG. It becomes possible to form at high speed.

更に、第3図に示すようにイオン生成・加速手段として
イオンビーム発生源27を真空チャンバlの真」−に位
置するように設け、該イオン発生源27にコントローラ
28及びガスボンベ29を接続した構成としてもよい。
Furthermore, as shown in FIG. 3, an ion beam generation source 27 as an ion generation/acceleration means is provided at the bottom of the vacuum chamber l, and a controller 28 and a gas cylinder 29 are connected to the ion generation source 27. You can also use it as

[発明の効果] 以」二詳述した如く、本発明によれば基板に対して密着
性の良好な被膜を高い成膜速度で形成し得る膜形成装置
を提供できる。
[Effects of the Invention] As described in detail below, according to the present invention, it is possible to provide a film forming apparatus capable of forming a film with good adhesion to a substrate at a high film forming rate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す膜形成装置の概略図、
第2図及び第3図はそれぞれ本発明の他の実施例を示す
膜形成装置の概略図である。 l・・・真空チャンバ、2・・・回転軸、3・・・ホル
ダ部祠、4・・・容器、8・・・モータ、10・・・ヒ
ータ電源、12・・・レーザ発振器、14・・・透過窓
、■5・・・ガス噴射部材、17・・・ボンベ、】9・
・・電極、21・・・排気管、22・・・基板、23・
・・粉末状蒸着物質、24・・・レーザ光、26・・保
持台、2フイオン発生源、28・・・コントローラ。 出願人代理人 弁理士 鈴江武彦 第1図 第 図
FIG. 1 is a schematic diagram of a film forming apparatus showing an embodiment of the present invention;
FIGS. 2 and 3 are schematic diagrams of film forming apparatuses showing other embodiments of the present invention. l... Vacuum chamber, 2... Rotating shaft, 3... Holder part shrine, 4... Container, 8... Motor, 10... Heater power supply, 12... Laser oscillator, 14... ... Transmission window, ■5... Gas injection member, 17... Cylinder, ]9.
...Electrode, 21...Exhaust pipe, 22...Substrate, 23.
... Powdered vapor deposition substance, 24... Laser light, 26... Holding stand, 2-ion source, 28... Controller. Applicant's agent Patent attorney Takehiko Suzue Figure 1

Claims (1)

【特許請求の範囲】[Claims] 真空チャンバと、このチャンバ内に配置され、粉末状蒸
着物質が収容された容器と、前記チャンバ内に配置され
、膜形成される基板を保持するためのホルダ部材と、前
記チャンバの壁部に設けられたレーザ光透過窓を通して
前記容器内の粉末状蒸着物質にレーザ光を照射して溶融
、蒸気化するためのレーザ光照射手段と、前記透過窓近
傍のチャンバ壁部に設けられ、ガスを該透過窓の内面に
向けて噴射するためのガス噴射手段と、前記チャンバ内
に配置され、前記レーザ光の照射により溶融、蒸気化さ
れた蒸着物質を前記ホルダ部材との間でイオン化すると
共に、そのイオン物質をホルダ部材上の基板に加速させ
るためのイオン生成・加速手段とを具備したことを特徴
とする膜形成装置。
a vacuum chamber; a container disposed within the chamber and containing a powdered vapor deposition material; a holder member disposed within the chamber for holding a substrate on which a film is to be formed; a laser beam irradiation means for irradiating the powdered vapor deposition material in the container with a laser beam through the laser beam transmission window to melt and vaporize the substance; a gas injection means for injecting the gas toward the inner surface of the transmission window; and the holder member, which is arranged in the chamber and melts and vaporizes the vaporized substance by irradiation with the laser beam, and ionizes the vapor deposition substance between the gas injection means and the holder member. A film forming apparatus comprising ion generation/acceleration means for accelerating ionic substances to a substrate on a holder member.
JP3133389A 1989-02-10 1989-02-10 Film forming device Pending JPH02209473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3133389A JPH02209473A (en) 1989-02-10 1989-02-10 Film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3133389A JPH02209473A (en) 1989-02-10 1989-02-10 Film forming device

Publications (1)

Publication Number Publication Date
JPH02209473A true JPH02209473A (en) 1990-08-20

Family

ID=12328329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3133389A Pending JPH02209473A (en) 1989-02-10 1989-02-10 Film forming device

Country Status (1)

Country Link
JP (1) JPH02209473A (en)

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