JPH0220862Y2 - - Google Patents
Info
- Publication number
- JPH0220862Y2 JPH0220862Y2 JP3698984U JP3698984U JPH0220862Y2 JP H0220862 Y2 JPH0220862 Y2 JP H0220862Y2 JP 3698984 U JP3698984 U JP 3698984U JP 3698984 U JP3698984 U JP 3698984U JP H0220862 Y2 JPH0220862 Y2 JP H0220862Y2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- trimming
- resistor
- section
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009966 trimming Methods 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3698984U JPS60149147U (ja) | 1984-03-14 | 1984-03-14 | 薄膜抵抗素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3698984U JPS60149147U (ja) | 1984-03-14 | 1984-03-14 | 薄膜抵抗素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60149147U JPS60149147U (ja) | 1985-10-03 |
| JPH0220862Y2 true JPH0220862Y2 (OSRAM) | 1990-06-06 |
Family
ID=30542685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3698984U Granted JPS60149147U (ja) | 1984-03-14 | 1984-03-14 | 薄膜抵抗素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60149147U (OSRAM) |
-
1984
- 1984-03-14 JP JP3698984U patent/JPS60149147U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60149147U (ja) | 1985-10-03 |
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