JPH02206147A - Manufacture of electrostatic chuck - Google Patents
Manufacture of electrostatic chuckInfo
- Publication number
- JPH02206147A JPH02206147A JP1027101A JP2710189A JPH02206147A JP H02206147 A JPH02206147 A JP H02206147A JP 1027101 A JP1027101 A JP 1027101A JP 2710189 A JP2710189 A JP 2710189A JP H02206147 A JPH02206147 A JP H02206147A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic molded
- tio2
- electrostatic chuck
- molded body
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 57
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 238000001179 sorption measurement Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 101100481408 Danio rerio tie2 gene Proteins 0.000 description 2
- 101100481410 Mus musculus Tek gene Proteins 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は導体或いは半導体材料からなる試料を電気的に
吸着・固定する静電チャックの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing an electrostatic chuck that electrically attracts and fixes a sample made of a conductor or semiconductor material.
（従来の技術）
シリコンウェハ了等の半導体ウェハーにパターンニング
、エツチング或いはＣＶＤ処理等を施してＬＳＩ等の大
集積回路チップを製造するにあ７ｊっでは、該ウェハー
を平坦な面に確実に固定して前記の各処理を行う必要が
あり、このための装置として減圧下でも有効な静電チャ
ックが特開昭５９−１．５２６３ｊ号等として知られて
いる。(Prior art) When manufacturing large integrated circuit chips such as LSI by patterning, etching, or CVD processing on a semiconductor wafer such as a silicon wafer, the wafer is securely fixed on a flat surface. It is necessary to perform each of the above-mentioned processes, and an electrostatic chuck that is effective even under reduced pressure is known as a device for this purpose, such as Japanese Patent Application Laid-Open No. 59-1.5263j.
静電チャックの構造は、一般に、セラミックス製基板上
に内部電極を形成し、この内部電極を誘電層にて覆うよ
うにしている。Generally, the structure of an electrostatic chuck is such that internal electrodes are formed on a ceramic substrate, and these internal electrodes are covered with a dielectric layer.
そして本出願人は誘電層の材料として、Ａ１２ＣＬ＋（
アルミナ）にＴｉ０２（チタニア）を添加したものを使
用することを提案している（特開昭６２−９４９５３号
）。The applicant has selected A12CL+(
It has been proposed to use Ti02 (titania) added to alumina (Japanese Patent Application Laid-Open No. 62-94953).
（発明が解決しようとする課題）
第５図は電圧印加時間と静電チャックの吸着力との関係
を示すグラフであり、誘電層の体積抵抗率（ρ）が吸着
力の印加電圧に対する応答性に密接な関連があることが
分る。つまり体積抵抗率（ρ）は（１ｏ゛ｌｌΩ・ｃｍ
）程度が適当である。(Problems to be Solved by the Invention) Figure 5 is a graph showing the relationship between the voltage application time and the adsorption force of an electrostatic chuck, and the volume resistivity (ρ) of the dielectric layer shows the response of the adsorption force to the applied voltage. It turns out that there is a close relationship between In other words, the volume resistivity (ρ) is (1o゛llΩ・cm
) is appropriate.
第６図は体積抵抗率（ρ）、温度（１／Ｔ：Ｔは絶対温
度）及び誘電層中のＴｉＯ２濃度（含有割合）との関係
を示すグラフであり、このグラフから明らかなように体
積抵抗率（ρ）は温度が上昇すると低下し、またＴｉＯ
２濃度が増すと低下することが分る。そして、例えば−
５０℃程度で行う低温エツチングに使用する静電チャッ
クの誘電層の当該使用温度における体積抵抗率（ρ）を
１ｏ１１（Ω・ｃｍ）程度とするにはお電層中のＴｉＯ
２濃度が少なくとも３．Ｏｗｔ！に以上でなければなら
ない。Figure 6 is a graph showing the relationship between volume resistivity (ρ), temperature (1/T: T is absolute temperature), and TiO2 concentration (content ratio) in the dielectric layer. The resistivity (ρ) decreases as the temperature increases, and TiO
It can be seen that as the concentration of 2 increases, it decreases. And for example -
To make the volume resistivity (ρ) of the dielectric layer of an electrostatic chuck used for low-temperature etching at about 50°C at the operating temperature to about 1011 (Ω cm), TiO in the dielectric layer is used.
2 concentration is at least 3. Owt! must be greater than or equal to .
一方、アルミナを主成分とするセラミックスを焼結させ
る場合、セラミックス中のＴｉＯ２の濃度が高くなると
液相生成温度が低下し、焼結が早く始まり、セラミック
ス中のバインダーがガス化して抜けきる前に液相が増し
、焼結が完了しガス化したバインダーが焼結体中に閉じ
込められて膨れとなる。したがってセラミックス中のＴ
ｉＯ２濃度は２、Ｏｗｔ！ｋが限度とされている。On the other hand, when sintering ceramics whose main component is alumina, when the concentration of TiO2 in the ceramics increases, the liquid phase formation temperature decreases, and sintering starts earlier, before the binder in the ceramics gasifies and escapes completely. The liquid phase increases, sintering is completed, and the gasified binder is trapped in the sintered body, forming a bulge. Therefore, T in ceramics
The iO2 concentration is 2, Owt! The limit is k.
このように誘電層中のＴｉＯ２濃度は嵩密度等を考慮す
ると２．０ｗｔ９６が上限であり、特に低温エツチング
用の静電チャックについては誘電層中のＴｉＯ□濃度が
少なく、吸着力不足を招いている。In this way, the upper limit of the TiO2 concentration in the dielectric layer is 2.0wt96 considering bulk density, etc., and especially for electrostatic chucks for low-temperature etching, the TiO2 concentration in the dielectric layer is low, leading to insufficient adsorption force. There is.
（課題を解決するための手段）
上記課題を解決すべく本発明は、ＴｉＯ２濃度を低くし
たセラミックス成形体の表面にＴｉＯ２成分を含むペー
ストを塗布し、これを加熱することでセラミックス焼結
体内にＴｉＯ２を熱拡散せしめるようにした。(Means for Solving the Problems) In order to solve the above problems, the present invention applies a paste containing a TiO2 component to the surface of a ceramic molded body with a low TiO2 concentration, and heats the paste to form a ceramic body inside the ceramic sintered body. The TiO2 was thermally diffused.
（作用）
Ｔｉ０２を熱拡散させることで、焼結体の膨れ（嵩密度
の低下）を招くことなく、ＴｉＯ２濃度の高い誘電層を
得ることができる。(Function) By thermally diffusing TiO2, a dielectric layer with a high TiO2 concentration can be obtained without causing swelling of the sintered body (reduction in bulk density).
（実施例）
以下に本発明の一実施例を添付図面に基づいて説明する
。(Example) An example of the present invention will be described below based on the accompanying drawings.
本発明方法にあっては先ず第１図に示すように複数のセ
ラミックス成形体１・・・を用意する。ここでセラミッ
クス成形体１としては例えばＡ ４２２０３を主成分と
するセラミックス粉末にＴｉＯ２を２．Ｏｗｔ！ｌｉ以
下混合して作成したスラリーをドクターブレード法によ
りテープ成形した０、５ｍｍ厚のグリーンシートを用い
る。In the method of the present invention, first, as shown in FIG. 1, a plurality of ceramic molded bodies 1 are prepared. Here, the ceramic molded body 1 is made of, for example, a ceramic powder containing A42203 as a main component and 2.0 mm of TiO2 added thereto. Owt! A green sheet with a thickness of 0.5 mm is used, which is formed by tape-forming a slurry prepared by mixing less than li by a doctor blade method.
一方、粒径１μ■程度のＴｉ（ｈ粉末をポリビニルブチ
ラール等の有機溶媒に混ぜてＴｉＯ２ペーストを調整し
、このＴｉ（ｈペースト２を最上層のセラミックス成形
体１ａの上面にスクリーン印刷法によって塗布する。塗
布回数は目的とするＴｉＯ２濃度に応じて選定する。上
記ペースト中のＴｉＯ２成分としては、上記Ｔｉｅ２の
他にＡ Ｊ２２０．４ｉ０２． Ｃａ０４ｉ０２゜Ｍｇ
Ｏ・ＴｉＯ２等を使用できる。On the other hand, a TiO2 paste is prepared by mixing Ti(h powder with a particle size of approximately 1 μι) with an organic solvent such as polyvinyl butyral, and this Ti(h paste 2 is applied to the top surface of the ceramic molded body 1a as the top layer by screen printing). The number of times of application is selected depending on the target TiO2 concentration.In addition to the Tie2 mentioned above, the TiO2 components in the paste include A J220.4i02.Ca04i02゜Mg.
O.TiO2 etc. can be used.
また上記のＴｉＯ□ペースト２とは別に調整したタング
ステンペースト３を上から２番目のセラミックス成形体
１ｂの上面にスクリーン印刷法によって塗布する。Further, a tungsten paste 3 prepared separately from the TiO□ paste 2 described above is applied to the upper surface of the second ceramic molded body 1b from the top by a screen printing method.
次いで各セラミックス成形体１・・・を積層し炉内に投
入して１５００℃〜１６００℃程度で加熱する。すると
セラミックス成形体１は第２図に示すようにセラミック
ス焼結体１１となり、最上層のセラミックス焼結体１１
ａの表面部にはＴｉＣｈが熱拡散した拡散層１２が形成
され、タングステンペースト３は内部電極１３となる。Next, the ceramic molded bodies 1 are stacked and put into a furnace and heated at about 1500°C to 1600°C. Then, the ceramic molded body 1 becomes a ceramic sintered body 11 as shown in FIG. 2, and the ceramic sintered body 11 of the uppermost layer
A diffusion layer 12 in which TiCh is thermally diffused is formed on the surface part a, and the tungsten paste 3 becomes an internal electrode 13.
さらに、表面を研削して、誘電層の厚さを３００μｍと
し、静電チャックとする。Furthermore, the surface is ground to give a dielectric layer thickness of 300 μm to form an electrostatic chuck.
第３図（Ａ）乃至（Ｇ）は拡散層１２及び内部電極１３
を形成する部分を異ならせた別実施例を示すものである
。FIGS. 3(A) to 3(G) show the diffusion layer 12 and the internal electrode 13.
This shows another embodiment in which the portions forming the .
上記積層法、ペーストの塗布回数、焼成温度と得られた
静電チャックの体積抵抗率とを表及び第４図に示す。The above lamination method, number of paste applications, firing temperature, and volume resistivity of the obtained electrostatic chuck are shown in the table and FIG. 4.
尚、試料Ｎｏ、８のグリーンシートはＴｉＯ２を １．
３ｗｔｋ、試料Ｎｏ、１２のグリーンシートはＴｉＯ２
を含まず、他はいずれもＴｉＯ２を０．８ｗｔ％ｉ含む
。In addition, the green sheet of sample No. 8 contained TiO2.
3wtk, sample No. 12 green sheet is TiO2
All the others contain 0.8wt%i of TiO2.
以上のことから明らかなように、本発明方法のようにグ
リーンシート積層法によって静電チャックを作成するよ
うにすれば、拡散層１２及び内部電極１３の位置を任意
に設定でき、体積抵抗率をコントロールするのが容易に
なる。As is clear from the above, if an electrostatic chuck is manufactured by the green sheet lamination method as in the method of the present invention, the positions of the diffusion layer 12 and the internal electrode 13 can be set arbitrarily, and the volume resistivity can be reduced. easier to control.
尚、内部電極１３については直接金属板を挿入するよう
にしてもよい。Note that a metal plate may be directly inserted into the internal electrode 13.
（発明の効果）
以上に説明したように本発明によれば、Ｔｉｅ、を誘電
層となるセラミックス成形体中に熱拡散させるようにし
たので、 ＴｉＯ２濃度の高い誘電層を膨れ等を生じる
ことなく得ることかでき、低温用の静電チャックとして
吸着力に優れたものを製造することができる。(Effects of the Invention) As explained above, according to the present invention, since the Tie is thermally diffused into the ceramic molded body that will become the dielectric layer, the dielectric layer with a high TiO2 concentration can be formed without causing blisters or the like. As a result, it is possible to manufacture an electrostatic chuck with excellent suction power for low temperatures.
また、本発明によれば塗布するＴｉｅ２ペーストの厚み
（量）及び積層方法を変えるだけで体積抵抗率を１０８
〜１０′４Ω・ｃｍ程度の広い範囲でコントロールする
ことができ、巾広い用途に対応することかでき、しかも
用意するセラミックス成形体の種類は少なくて済む。In addition, according to the present invention, the volume resistivity can be increased to 108 by simply changing the thickness (amount) of the Tie2 paste applied and the lamination method.
It can be controlled over a wide range of about 10'4 Ω·cm and can be used in a wide range of applications, and the number of types of ceramic molded bodies to be prepared can be reduced.
第１図は焼結前のセラミックス成形体の分解斜視図、第
２図はセラミックス成形体を焼結することで得られる静
電チャックの断面図、第３図（Ａ）乃至（Ｅ）は別実施
例を示す第２図と同様の図、第４図は各試料の体積抵抗
率を示すグラフ、第５図は電圧印加時間、吸着力及び体
積抵抗率の関係を示すグラフ、第６図は温度、体積抵抗
率及びＴｉＯ２濃度の関係を示すグラフである。
尚、図面中１．Ｉａ、Ｉｂはセラミックス成形体、２は
Ｔｉｅ、ペースト、３はタングステンペースト、１１は
セラミックス焼結体、１２はＴｉＯ２拡散層、１３は内
部電極である。Figure 1 is an exploded perspective view of a ceramic molded body before sintering, Figure 2 is a sectional view of an electrostatic chuck obtained by sintering the ceramic molded body, and Figures 3 (A) to (E) are separate. Figure 4 is a graph showing the volume resistivity of each sample; Figure 5 is a graph showing the relationship between voltage application time, adsorption force, and volume resistivity; Figure 6 is a graph showing the relationship between voltage application time, adsorption force, and volume resistivity. It is a graph showing the relationship between temperature, volume resistivity, and TiO2 concentration. In addition, in the drawing 1. Ia and Ib are ceramic molded bodies, 2 is a tie and paste, 3 is a tungsten paste, 11 is a ceramic sintered body, 12 is a TiO2 diffusion layer, and 13 is an internal electrode.
Claims (4)
ミックス成形体を複数用意し、これらセラミックス成形
体のうち誘電層となるセラミックス成形体の表面にＴｉ
Ｏ＿２成分を含むペーストを塗布し、次いで各セラミッ
クス成形体を積層して加熱することで塗布したペースト
中のＴｉＯ＿２をセラミックス成形体中に拡散せしめる
ようにしたことを特徴とする静電チャックの製造方法。(1) Prepare a plurality of ceramic molded bodies with a TiO_2 content of 2.0 wt% or less, and apply Ti to the surface of the ceramic molded body that will become the dielectric layer among these ceramic molded bodies.
A method for manufacturing an electrostatic chuck, characterized in that a paste containing an O_2 component is applied, and then each ceramic molded body is laminated and heated to diffuse TiO_2 in the applied paste into the ceramic molded body. .
シートであり、このセラミックスシートの焼結と前記ペ
ースト中のＴｉＯ＿２の熱拡散とを同時に行うようにし
たことを特徴とする請求項（１）に記載の静電チャック
の製造方法。(2) The ceramic molded body is an unsintered ceramic sheet, and the sintering of the ceramic sheet and the thermal diffusion of TiO_2 in the paste are performed at the same time. A method of manufacturing the electrostatic chuck described.
ラミックス成形体の表面又は裏面には内部電極となる金
属ペーストが塗布されていることを特徴とする請求項（
１）に記載の静電チャックの製造方法。(3) A metal paste serving as an internal electrode is coated on the front or back surface of a predetermined ceramic molded body among the laminated ceramic molded bodies.
1) The method for manufacturing an electrostatic chuck according to item 1).
ラミックス成形体間には内部電極となる金属板が挟持さ
れていることを特徴とすることを特徴とする請求項（１
）に記載の静電チャックの製造方法。(4) Claim (1) characterized in that a metal plate serving as an internal electrode is sandwiched between predetermined ceramic molded bodies among the laminated ceramic molded bodies.
) The method for manufacturing an electrostatic chuck described in
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1027101A JPH02206147A (en) | 1989-02-06 | 1989-02-06 | Manufacture of electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1027101A JPH02206147A (en) | 1989-02-06 | 1989-02-06 | Manufacture of electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02206147A true JPH02206147A (en) | 1990-08-15 |
Family
ID=12211695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1027101A Pending JPH02206147A (en) | 1989-02-06 | 1989-02-06 | Manufacture of electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02206147A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04133443U (en) * | 1991-05-30 | 1992-12-11 | 京セラ株式会社 | Ceramic electrostatic chuck |
| JPH08274150A (en) * | 1995-03-31 | 1996-10-18 | Nec Corp | Electrostatic attracting stage |
| US5909354A (en) * | 1995-08-31 | 1999-06-01 | Tocalo Co., Ltd. | Electrostatic chuck member having an alumina-titania spray coated layer and a method of producing the same |
| US6351367B1 (en) | 1997-09-30 | 2002-02-26 | Shin-Etsu Chemical Co., Ltd. | Electrostatic holding apparatus having insulating layer with enables easy attachment and detachment of semiconductor object |
| KR100407708B1 (en) * | 1996-02-01 | 2004-01-28 | 동경 엘렉트론 주식회사 | A retractable structure in which the object to be processed is placed |
| WO2024004778A1 (en) * | 2022-06-29 | 2024-01-04 | 住友大阪セメント株式会社 | Semiconductor manufacturing device member and electrostatic chuck device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6059104A (en) * | 1983-09-03 | 1985-04-05 | 新宅 光男 | Foot cover by sock knitting machine |
| JPS62264638A (en) * | 1987-04-21 | 1987-11-17 | Toto Ltd | Manufacture of electrostatic chucking substrate |
| JPS62286248A (en) * | 1986-06-05 | 1987-12-12 | Toto Ltd | Electrostatic chuck plate and manufacture thereof |
| JPS6395644A (en) * | 1986-10-13 | 1988-04-26 | Nippon Telegr & Teleph Corp <Ntt> | Electrostatic chuck |
-
1989
- 1989-02-06 JP JP1027101A patent/JPH02206147A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6059104A (en) * | 1983-09-03 | 1985-04-05 | 新宅 光男 | Foot cover by sock knitting machine |
| JPS62286248A (en) * | 1986-06-05 | 1987-12-12 | Toto Ltd | Electrostatic chuck plate and manufacture thereof |
| JPS6395644A (en) * | 1986-10-13 | 1988-04-26 | Nippon Telegr & Teleph Corp <Ntt> | Electrostatic chuck |
| JPS62264638A (en) * | 1987-04-21 | 1987-11-17 | Toto Ltd | Manufacture of electrostatic chucking substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04133443U (en) * | 1991-05-30 | 1992-12-11 | 京セラ株式会社 | Ceramic electrostatic chuck |
| JPH08274150A (en) * | 1995-03-31 | 1996-10-18 | Nec Corp | Electrostatic attracting stage |
| US5909354A (en) * | 1995-08-31 | 1999-06-01 | Tocalo Co., Ltd. | Electrostatic chuck member having an alumina-titania spray coated layer and a method of producing the same |
| KR100407708B1 (en) * | 1996-02-01 | 2004-01-28 | 동경 엘렉트론 주식회사 | A retractable structure in which the object to be processed is placed |
| US6351367B1 (en) | 1997-09-30 | 2002-02-26 | Shin-Etsu Chemical Co., Ltd. | Electrostatic holding apparatus having insulating layer with enables easy attachment and detachment of semiconductor object |
| WO2024004778A1 (en) * | 2022-06-29 | 2024-01-04 | 住友大阪セメント株式会社 | Semiconductor manufacturing device member and electrostatic chuck device |
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