JPH02194501A - Resistor - Google Patents

Abstract

PURPOSE:To stabilize characteristics of electric resistance even under a condition of a large temperature change by using a composite material of a compound composed of a combination of three elements, i.e., zirconium, silicon and carbon, especially by using a composite material of zirconium carbide and silicon carbide. CONSTITUTION:A vacuum tank 1 is first evacuated to produce a vacuum; zirconium 3 evaporated by using an electron-beam evaporation apparatus 2. A prescribed voltage and a prescribed electric current are arranged to be applied on an ionization electrode 4 and a discharge plasma is formed. Then, after an electric discharge has been stabilized, tetramethylsilane(Si(CH3)4) gas is introduced; a reactive ion plating operation is executed by means of zirconium and tetramethylsilane; a thin film is formed on a ceramic substrate 5 which has been placed at the upper part of a zirconium evaporation source. Thereby, a composite film 8 composed mainly of zirconium carbide and silicon carbide can be formed; it is possible to obtain an extremely excellent characteristic as a heat-generating resistor such as a thermal head or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a heating resistor in a thermal head or the like.

[Summary of the invention]

The present invention provides a high-performance resistor for a heat generating resistor used in a thermal head etc. by using a composite material of a compound consisting of a combination of three elements, zirconium silicon and carbon, as the resistor material.

(Prior art) Conventionally, three-film resistors made by vapor phase plating, printing, and firing have been used as resistors for thermal heads, etc., but these thin-film resistor materials include tantalum nitride, nichrome, and ruthenium oxide. etc. were used.

[Problem to be solved by the invention]

With the recent development of the electronic industry, it is desired to improve the precision and stability of heating resistors in thermal heads and the like. However, conventionally used resistor materials have problems with the resistivity itself, changes in resistivity due to temperature, and reproducibility and reliability. For example, metals such as nichrome 4-cuntal or interstitial metal compounds such as tantalum nitride and titanium carbide exhibit metal-type electrical conductivity and have low specific resistivity, so when used as a thin film resistor, the film thickness must be reduced. mosquito,
Or, the wiring needed to be thinner and longer. For this reason, the yield in manufacturing resistors has been reduced, and reliability has also been reduced. Furthermore, in such resistor materials, a large increase in specific resistivity due to temperature rise due to the application of electric power causes a deviation from the originally intended resistance value.

Furthermore, ruthenium oxide, tantalum, and silicon oxide resistors exhibit extremely unstable resistivity due to electrical conduction due to oxygen defects, and cannot be applied to products that require high reliability.

r! ! Means for Solving Problem W] In order to solve the above problems, in the present invention, a composite compound consisting of a combination of the three elements zirconium, silicon, and carbon, particularly zirconium carbide and silicon carbide, is used. composite material is used as a resistor.

[Effect]

As mentioned above, zirconium as the resistor material.

By using a composite material of a compound consisting of a combination of the three elements silicon and carbon, it is possible to create a resistor that has a higher specific resistivity than metallic electrical conductivity and has a smaller change in specific resistivity with respect to temperature changes. Of the compounds made from the combination of these three elements, a composite material of zirconium carbide and silicon carbide has a particularly large effect on this effect. In other words, zirconium carbide exhibits similar properties to the conventionally used tantalum nitride. On the other hand, silicon carbide exhibits semiconductor-like electrical conductivity. That is, near room temperature, it exhibits a resistance ratio of 10 3 to 10 7 times that of zirconium carbide, and at high temperatures, this decreases to 10' to 10 3 times. Therefore, at low temperatures, silicon carbide acts like an insulator in zirconium carbide, so it is possible to obtain a higher specific resistivity overall than conventional interstitial metal compounds such as tantalum nitride, and at the same time, the temperature dependence of resistivity is can be made smaller.

In addition, both zirconium carbide and silicon carbide have a cubic crystal structure, and even when combined, the composite material is extremely stable. ! : Therefore, quality aspects such as reliability can be improved.

In this way, by combining zirconium carbide, which exhibits metallic electrical conductivity, and silicon carbide, which exhibits semiconducting electrical conductivity, a synergistic effect of both properties appears, resulting in excellent electrical resistance properties even under conditions of large temperature changes. Therefore, it is possible to fabricate a resistor having the following properties.

〔Example〕

As an example of the present invention, a composite membrane resistor fabricated by a reactive ion blating method will be described.

FIG. 1 is a longitudinal cross-sectional view of a reactive ion blating apparatus for forming a composite film resistor of a compound made of a combination of the three elements of zirconium, silicon, and carbon according to the present invention.

First, the vacuum chamber 1 was evacuated to 10-' Torr, and zirconium 3 was evacuated using the electron beam evaporator 2.

At this time, a voltage of 40 V - 30 A was applied to the ionized Tl pole 4 to form a discharge plasma.
Next, after the discharge stabilized, tetramethylanran (S
i (CHx)4) Gas l x 10- 'Tor
A thin film of 2,000 layers was formed on a ceramic substrate placed above the zirconium source by reactive ion blating with zirconium and tetramethylsilane. When this thin film was analyzed, it was found that it was a composite film whose main components were zirconium carbide and silicon carbide, as shown in FIG. Further, when the relationship between temperature and specific resistance of this thin film was investigated, the result was as shown in FIG. 3, and it showed extremely excellent characteristics as a heat generating resistor for a thermal head or the like.

〔Effect of the invention〕

According to the present invention, by using a composite material of a compound consisting of a combination of two or more of the three elements zirconium, ion, and carbon, in particular a composite material whose main components are zirconium carbide and silicon carbide, Compared to interstitial metal carbides and nitrides, it has become possible to increase the specific resistivity and to reduce the dependence of the specific resistivity on temperature. This brings us to thermal.

It can be applied as a highly reliable and stable resistor material f4 to fine heat generating resistors such as wires and the like. In other words, the increased specific resistivity eliminates the need to increase the thickness of the thin film resistor, which is the heat generating part, and to intentionally narrow the wiring width, which not only improves reliability but also improves mass production. In terms of aspects as well, it is possible to significantly improve yields in photolithography processes and the like compared to conventional methods. Furthermore, since the temperature dependence of specific resistivity is small, high-speed temperature control can be achieved.

In addition, in the example, the relationship between temperature and resistivity is shown in Figure 3, but it is possible to change the resistance value over a wide range by changing the ratio of the combination of three elements, the ratio of compounds, etc. We know this from experiments.

In the examples, reactive ion blating was used as a method for manufacturing the composite material resistor of the present invention, but other methods such as sputtering or CVD may be used, or powder of this material itself may be used in the form of a paste. One possible method is to print, bake, and make a resistor.
It goes without saying that either method can be expected to have the same effect as the methods cited in the practical examples.

[Brief explanation of the drawing]

Figure 1 is a longitudinal cross-sectional view of a reactive ion brating device, which is a method for manufacturing a resistor according to the present invention described in Example 1. Figure 2 is an Auger analysis of the resistor manufactured in Example 1. It is a figure showing a result. FIG. 3 is a diagram showing the relationship between temperature and specific resistivity of the resistor manufactured in Example-1. l...Vacuum chamber 2...Electron beam evaporator 3...Zirconium 4...Ionization electrode 5...Ceramics substrate
Toshio Hirai, agent for Seiko Electronics Industries Co., Ltd., patent attorney; Takayuki Hayashi, assistant;
Longitudinal cross-sectional view of I"4 constant 1i ion play Kambu Chichioki 81 Figure 5PuTTERTIME (min)
Diagram 2 showing analysis of lees

Claims (2)

[Claims] (1) In a heating resistor used for a thermal head etc.,
A resistor characterized in that the heating resistor material is a composite material of a compound consisting of a combination of three elements: zirconium, silicon, and carbon. (2) The resistor according to claim 1, wherein the compound comprising a combination of three elements, zirconium, silicon, and carbon, constituting the composite material is zirconium carbide and silicon carbide.