JPH02192210A - Crystal resonator - Google Patents
Crystal resonatorInfo
- Publication number
- JPH02192210A JPH02192210A JP980189A JP980189A JPH02192210A JP H02192210 A JPH02192210 A JP H02192210A JP 980189 A JP980189 A JP 980189A JP 980189 A JP980189 A JP 980189A JP H02192210 A JPH02192210 A JP H02192210A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- crystal
- sputtering
- crystal chip
- cathodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 4
- 238000010849 ion bombardment Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 16
- 239000007789 gas Substances 0.000 abstract description 9
- 229910052786 argon Inorganic materials 0.000 abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 239000010953 base metal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は水晶片に金属薄膜電極を設けた水晶振動子に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a crystal resonator in which a metal thin film electrode is provided on a crystal piece.
従来においては、特開昭６３−２４０１１３号公報に示
されるように、水晶片の表面にベース金属膜を設け、冷
陰極放電スパッタリングによりベース金属膜上に金属薄
膜を形成することにより、水晶振動子の共振周波数を所
定の値にしており、また特開昭６３−２４０１１２号公
報に示される。ように、水晶片の表面に電極としての膜
厚よりも厚い金属膜を設け、冷陰極放電スパッタリング
により金属膜をエツチングすることにより、水晶振動子
の共振周波数を所定の値にしている。Conventionally, as shown in Japanese Unexamined Patent Publication No. 63-240113, a crystal resonator is manufactured by providing a base metal film on the surface of a crystal piece and forming a metal thin film on the base metal film by cold cathode discharge sputtering. The resonant frequency is set to a predetermined value, and is disclosed in Japanese Patent Application Laid-Open No. 63-240112. Thus, by providing a metal film thicker than the electrode film on the surface of a crystal blank and etching the metal film by cold cathode discharge sputtering, the resonant frequency of the crystal resonator is set to a predetermined value.
しかし、このような水晶振動子においては、共振周波数
を高くすることができない。However, in such a crystal resonator, the resonant frequency cannot be increased.
この発明は上述の課題を解決するためになされたもので
、共振周波数が高い水晶振動子を提供することを目的と
する。This invention was made in order to solve the above-mentioned problem, and an object thereof is to provide a crystal resonator with a high resonance frequency.
この目的を達成するため、この発明においては、水晶片
の少なくとも片面をイオン衝撃、電子衝撃、レーザ光照
射、放電、スパッタリングの非化学的エツチング法によ
りエツチングし、上記水晶片の両面に金属薄膜電極を設
ける。In order to achieve this object, in the present invention, at least one side of the crystal piece is etched by a non-chemical etching method such as ion bombardment, electron bombardment, laser beam irradiation, electric discharge, and sputtering, and metal thin film electrodes are formed on both sides of the crystal piece. will be established.
この水晶振動子においては、水晶片の少なくとも片面を
イオン衝撃、電子衝撃、レーザ光照射、放電、スパッタ
リングの非化学的エツチング法によりエツチングするか
ら、水晶片を薄くすることができる。In this crystal resonator, since at least one side of the crystal piece is etched by a non-chemical etching method such as ion bombardment, electron bombardment, laser beam irradiation, discharge, or sputtering, the crystal piece can be made thin.
第１図はこの発明に係る水晶振動子を製造するための装
置を示す概略断面図である。図において、１はスパッタ
リング容器、１ａは容器１の側壁円板、２は容器１によ
って形成されたスパッタリング室、３はスパッタリング
室２内に設けられた円筒状の陽極で、陽極３は内径が１
０ ｍ 、外径が１１ ｍ。FIG. 1 is a schematic sectional view showing an apparatus for manufacturing a crystal resonator according to the present invention. In the figure, 1 is a sputtering container, 1a is a side wall disk of the container 1, 2 is a sputtering chamber formed by the container 1, 3 is a cylindrical anode provided in the sputtering chamber 2, and the anode 3 has an inner diameter of 1.
0 m, outer diameter 11 m.
長さが８ｍである。４は陽極３に取り付けられた陽極支
持棒で、陽極支持棒４は直流高電圧電源（図示せず）に
接続されている。５は陽極支持棒４を容器１に固定する
絶縁体、７，８は容器１に取り付けられた一対の円形対
向陰極で、陰極７゜８は陽極３の両側に位置しており、
陰極７．８は陽極３の中心線と直角であり、また陰極７
．８はアース電位であり、さらに陰極７．８は金からな
り、直径が３０ａｗ、厚さが１閣である。６は容器１に
設けられたベローズで、可変装置（図示せず）によって
陽極３の陰極７．８に対する位置を変化することができ
る。９はスパッタリング容器１に取り付けられた試料容
器、１０は試料容器９によって形成された試料室、１１
はスパッタリング容器１と試料容器９とで構成された真
空容器で、真空容器１１には排気管（図示せず）および
ガス導入管（図示せず）が接続されている９１２は側壁
円板１ａに取り付けられた試料取付部材、１３は側壁円
板１ａ、陰極７に設けられた透過孔、１４は試料取付部
材１２に設けられた透過孔で、透過孔１３．１４の中心
線は一致しており、透過孔１４の直径は４ａｍである。The length is 8m. Reference numeral 4 denotes an anode support rod attached to the anode 3, and the anode support rod 4 is connected to a DC high voltage power source (not shown). 5 is an insulator that fixes the anode support rod 4 to the container 1; 7 and 8 are a pair of circular opposing cathodes attached to the container 1; the cathodes 7.8 are located on both sides of the anode 3;
The cathode 7.8 is perpendicular to the center line of the anode 3, and the cathode 7.8
．． 8 is at ground potential, and the cathode 7.8 is made of gold, has a diameter of 30 AW, and a thickness of 1 mm. 6 is a bellows provided in the container 1, and the position of the anode 3 relative to the cathode 7.8 can be changed by a variable device (not shown). 9 is a sample container attached to the sputtering container 1; 10 is a sample chamber formed by the sample container 9; 11
912 is a vacuum container composed of a sputtering container 1 and a sample container 9, and an exhaust pipe (not shown) and a gas introduction pipe (not shown) are connected to the vacuum container 11. The attached sample mounting member, 13 is a transmission hole provided in the side wall disk 1a and the cathode 7, 14 is a transmission hole provided in the sample mounting member 12, and the center lines of the transmission holes 13 and 14 are aligned. , the diameter of the transmission hole 14 is 4 am.
１５は試料取付部材１２に取り付けられた水晶片で二水
晶片１５の直径は１０−であり、水晶片１５の表面には
金からなるベース金属膜が設けられており、水晶片１５
の共振周波数は２９．３３４ＭＩ（ｚである。なお、真
空容器１１の外側に磁石（図示せず）が設けられ、磁石
の磁力線の方向は陽極３の中心線と平行であり、磁石の
磁束密度は０．ＩＴである。Reference numeral 15 denotes a crystal piece attached to the sample mounting member 12, and the diameter of the crystal piece 15 is 10-.A base metal film made of gold is provided on the surface of the crystal piece 15.
The resonance frequency is 29.334 MI (z). A magnet (not shown) is provided outside the vacuum vessel 11, and the direction of the magnetic field lines of the magnet is parallel to the center line of the anode 3, and the magnetic flux density of the magnet is is 0.IT.
この装置によりこの発明に係る水晶振動子を製造するに
は、まず透過孔１３．１４の中心線が陽極３の内側を通
るようにした状態で、真空容器１１内を真空に排気した
うえで、真空容器１１内にアルゴンガスを導入すること
により、真空容器１１内を２．７Ｘ １０−”Ｐａのア
ルゴンガス雰囲気としたのち、直流高電圧電源により陽
極３に１．５ｋＶの正電位を１１０分間与える。すると
、陽極３と陰極７．８との間に放電電流が１０ｍＡの冷
陰極放電が生じ、これによって生成されるアルゴンガス
の正イオンが陰極７．８の表面を衝撃し、陰極７，８か
ら金原子がスパッタリングされ、スパッタリングされた
金原子の一部が透過孔１３．１４を透過して、水晶片１
５の表面を衝撃し、水晶片１５の表面の透過孔１４に対
向した部分のベース金属膜および水晶片１５自身がエツ
チングされ、水晶片１５の表面に凹部が形成される。つ
ぎに、側壁円板１ａから試料取付部材１２を取り外し、
直径が６ｒ！ｎの透過孔を有する試料取付部材（図示せ
ず）を側壁円板１ａに取り付け、その試料取付部材に水
晶片１５を取り付け、透過孔１３の中心線が陽極３の外
側を通るようにした状態で、真空容器１１内を真空に排
気したうえで、真空容器１１内にアルゴンガスを導入す
ることにより、真空容器１１内を２．７Ｘ １０−”Ｐ
ａのアルゴンガス雰囲気としたのち、直流高電圧電源に
より陽極３に１．５ｋＶの正電位を２．５分間与える。In order to manufacture the crystal resonator according to the present invention using this apparatus, first, the center line of the transmission hole 13, 14 passes through the inside of the anode 3, and the inside of the vacuum container 11 is evacuated, and then, After introducing argon gas into the vacuum container 11 to create an argon gas atmosphere of 2.7×10-”Pa, a positive potential of 1.5 kV was applied to the anode 3 for 110 minutes using a DC high voltage power supply. Then, a cold cathode discharge with a discharge current of 10 mA occurs between the anode 3 and the cathode 7.8, and the positive ions of the argon gas generated thereby impact the surface of the cathode 7.8, causing the cathode 7, Gold atoms are sputtered from 8, and a part of the sputtered gold atoms passes through the transmission holes 13 and 14 to form the crystal blank 1.
5, the base metal film on the surface of the crystal blank 15 facing the transmission hole 14 and the crystal blank 15 itself are etched, and a recess is formed on the surface of the crystal blank 15. Next, remove the sample mounting member 12 from the side wall disk 1a,
The diameter is 6r! A sample mounting member (not shown) having n transmission holes is attached to the side wall disc 1a, a crystal piece 15 is attached to the sample mounting member, and the center line of the transmission hole 13 passes through the outside of the anode 3. After evacuating the inside of the vacuum container 11, argon gas is introduced into the vacuum container 11, so that the inside of the vacuum container 11 is evacuated to 2.7X 10-''P.
After creating an argon gas atmosphere as shown in a., a positive potential of 1.5 kV is applied to the anode 3 for 2.5 minutes using a DC high voltage power supply.
すると、陽極３と陰極７．８との間に放電電流が１０＋
＊Ａの冷陰極放電が生じ、これによって生成されるアル
ゴンガスの正イオンが陰極７．８の表面を衝撃し、陰極
７．８から金原子がスパッタリングされ、スパッタリン
グされた金原子の一部が透過孔１３を透過して、水晶片
１５の表面に付着する。この結果、水晶片１５の共振周
波数は４４．６８９ＭＨｚとなった。Then, the discharge current between the anode 3 and the cathode 7.8 is 10+
*A cold cathode discharge occurs, and positive ions of argon gas generated thereby impact the surface of the cathode 7.8, and gold atoms are sputtered from the cathode 7.8, and some of the sputtered gold atoms It passes through the transmission hole 13 and adheres to the surface of the crystal piece 15 . As a result, the resonant frequency of the crystal blank 15 was 44.689 MHz.
このように、水晶片１５を冷陰極放電スパッタリングに
よりエツチングして、水晶片１５を薄くすることにより
、共振周波数を約３０ＭＨｚから約４５ＭＨｚに高める
ことができた。In this way, by etching the crystal blank 15 by cold cathode discharge sputtering and making the crystal blank 15 thinner, the resonance frequency could be increased from about 30 MHz to about 45 MHz.
また、共振周波数が４４．６８９Ｍ ）ｆｚの水晶片を
上述と同様の条件の冷陰極放電スパッタリングにより１
０秒間エツチングしたところ、水晶片の共振周波数は４
４．７１１ＭＨｚとなった。In addition, a crystal piece with a resonant frequency of 44.689M)fz was subjected to cold cathode discharge sputtering under the same conditions as described above.
After etching for 0 seconds, the resonance frequency of the crystal piece was 4.
The frequency was 4.711MHz.
なお、上述実施例においては、第２図に示すように、水
晶片１５の片面のみをエツチングしたが。In the above embodiment, only one side of the crystal piece 15 was etched, as shown in FIG.
第３図に示すように、水晶片１５の両面をエツチングし
てもよい、また、上述実施例においては、中空状の陽極
として円筒状の陽極３を用いたが、角筒状等の陽極、中
心線と平行な切欠きを有する筒状の陽極、２つのリング
を数本の棒体で連結した陽極等を用いてもよい。As shown in FIG. 3, both sides of the crystal blank 15 may be etched.Also, in the above embodiment, a cylindrical anode 3 was used as the hollow anode, but an anode having a rectangular cylindrical shape, etc. A cylindrical anode having a notch parallel to the center line, an anode formed by connecting two rings with several rods, etc. may be used.
以上説明したように、この発明に係る水晶振動子におい
ては、水晶片の少なくとも片面をイオン衝撃、電子衝撃
、レーザ光照射、放電、スパッタリングの非化学的エツ
チング法によりエツチングするから、水晶片を薄くする
ことができるので、共振周波数が高い。このように、こ
の発明の効果は顕著である。As explained above, in the crystal resonator according to the present invention, at least one side of the crystal piece is etched by a non-chemical etching method such as ion bombardment, electron bombardment, laser beam irradiation, discharge, or sputtering, so that the crystal piece can be thinned. Therefore, the resonant frequency is high. As described above, the effects of this invention are remarkable.
第１図はこの発明に係る水晶振動子を製造するための装
置を示す概略断面図、第２図、第３図はそれぞれこの発
明に係る水晶振動子を示す概略断面図である。
２・・・スパッタリング室
３・・・陽極
７．８・・・対向陰極
１５・・・水晶片FIG. 1 is a schematic cross-sectional view showing an apparatus for manufacturing a crystal resonator according to the present invention, and FIGS. 2 and 3 are schematic cross-sectional views each showing a crystal resonator according to the present invention. 2... Sputtering chamber 3... Anode 7.8... Opposed cathode 15... Crystal piece
Claims (1)
レーザ光照射、放電、スパッタリングの非化学的エッチ
ング法によりエッチングし、上記水晶片の両面に金属薄
膜電極を設けたことことを特徴とする水晶振動子。1. At least one side of the crystal piece is subjected to ion bombardment, electron bombardment,
A crystal resonator characterized in that the crystal piece is etched by a non-chemical etching method such as laser beam irradiation, discharge, and sputtering, and metal thin film electrodes are provided on both sides of the crystal piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP980189A JPH02192210A (en) | 1989-01-20 | 1989-01-20 | Crystal resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP980189A JPH02192210A (en) | 1989-01-20 | 1989-01-20 | Crystal resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02192210A true JPH02192210A (en) | 1990-07-30 |
Family
ID=11730295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP980189A Pending JPH02192210A (en) | 1989-01-20 | 1989-01-20 | Crystal resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02192210A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999010938A1 (en) * | 1997-08-22 | 1999-03-04 | Cts Corporation | Piezoelectric resonator using sacrificial layer for tuning |
-
1989
- 1989-01-20 JP JP980189A patent/JPH02192210A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999010938A1 (en) * | 1997-08-22 | 1999-03-04 | Cts Corporation | Piezoelectric resonator using sacrificial layer for tuning |
| US6249074B1 (en) * | 1997-08-22 | 2001-06-19 | Cts Corporation | Piezoelectric resonator using sacrificial layer and method of tuning same |
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