JPH0218848A - Charged particle beam device - Google Patents

Charged particle beam device

Info

Publication number
JPH0218848A
JPH0218848A JP16962988A JP16962988A JPH0218848A JP H0218848 A JPH0218848 A JP H0218848A JP 16962988 A JP16962988 A JP 16962988A JP 16962988 A JP16962988 A JP 16962988A JP H0218848 A JPH0218848 A JP H0218848A
Authority
JP
Japan
Prior art keywords
electrode
target
deceleration
charged particle
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16962988A
Other languages
Japanese (ja)
Inventor
Hiroshi Sawaragi
宏 澤良木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP16962988A priority Critical patent/JPH0218848A/en
Publication of JPH0218848A publication Critical patent/JPH0218848A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form the deceleration field with low aberration by arranging an auxiliary electrode between a focusing lens and a decelerating electrode and applying the voltage to this auxiliary electrode. CONSTITUTION:An auxiliary electrode 10 is provided between an objective lens 2 and a decelerating electrode 8, an intermediate potential between the potential of the outside electrode of the objective lens 2 and the potential of the decelerating electrode 8 is applied to this auxiliary electrode 10. The decelerating voltage of about 30kV is applied to a target 3 and the decelerating electrode 8 by power sources 11 and 12, 10kV is applied to the auxiliary electrode 10 by the power source 11, for example. The aberration due to the objective lens and the deceleration field is sharply reduced.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、ターゲットにイオンビームや電子ビームを集
束するようにした装置に関し、特に、荷電粒子ビームを
減速してターゲットに照射するよにした荷電粒子ビーム
装置に関する。
[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a device that focuses an ion beam or an electron beam on a target, and in particular, a device that decelerates a charged particle beam and irradiates the target with it. This invention relates to a charged particle beam device.

(従来技術) 第2図は従来のイオンビーム装置を示しており、図中1
はイオン源である。イオン源1から発生しJJII速さ
れたイオンビームは、対物レンズ2にょ−)てターゲラ
1−3上に集束される。対物レンズ2は電源4からレン
ズ電圧が印加される中心電極5と接地電位の外側電極6
とから構成され、この外側電極6とターゲット3との間
には、ffi源7がら減速電圧が印加されている。
(Prior art) Figure 2 shows a conventional ion beam device.
is the ion source. An ion beam generated from an ion source 1 and accelerated to JJII speed is focused onto a target lens 1-3 by an objective lens 2. The objective lens 2 has a center electrode 5 to which a lens voltage is applied from a power source 4 and an outer electrode 6 at ground potential.
A deceleration voltage is applied between the outer electrode 6 and the target 3 from an ffi source 7.

この構成で、イオン源1においてイオンビー11は、例
えば、30kVの加速電圧で加速され、この加速された
イオンビームは、例えば、ターゲット3に27kVの電
圧が印加されることによって減速されて3kVのランデ
ィングエネルギーでターゲット3に照射される。この結
果、イオンビームは高いエネルギーで対物レンズ2にへ
削スることから対物レンズのレンズ収差は低くおさえら
れ、イオンビームはターゲット3に細く集束される。
With this configuration, the ion beam 11 is accelerated in the ion source 1 with an acceleration voltage of, for example, 30 kV, and this accelerated ion beam is decelerated by applying a voltage of 27 kV to the target 3, for example, to land at 3 kV. Target 3 is irradiated with energy. As a result, since the ion beam abrades the objective lens 2 with high energy, the lens aberration of the objective lens is suppressed to a low level, and the ion beam is narrowly focused on the target 3.

又、ターゲット3には減速されてイオンビームが照射さ
れることから、ターゲット3のイオンビ−ム照射点のΩ
山は防止される。
Also, since the target 3 is irradiated with the ion beam at a reduced speed, the Ω of the ion beam irradiation point on the target 3 is
Mountains are prevented.

上記第2図の構成では、減速電界がターゲット3に直接
露出しているために、2次電子が検出できない、あるい
は、ターゲットの移動に伴い、イオンビームが不正に偏
向されてしまう等の問題があった。第3図は、このよう
な問題を解決するために考えられたイオンビームの集束
系を示しており、第2図と同一部分には同一番号を付し
である。
In the configuration shown in FIG. 2 above, since the deceleration electric field is directly exposed to the target 3, there are problems such as the secondary electrons cannot be detected or the ion beam is incorrectly deflected as the target moves. there were. FIG. 3 shows an ion beam focusing system designed to solve this problem, and the same parts as in FIG. 2 are given the same numbers.

この第3図の構成では、対物レンズ2とターゲット3ど
の間に、ターゲット3と同電位の減速電極8が配置され
、この減速電極8とターゲット3との間に2次電子検出
器9が配置される。このように構成することにより、タ
ーゲット3の表面は減速電界に直接露出することがなく
なり、2次電子の検出が可能となる。又、ターゲット3
を移動しても、減速電界が乱されることはなく、イオン
ビームが不正に偏向されることはない。
In the configuration shown in FIG. 3, a deceleration electrode 8 having the same potential as the target 3 is placed between the objective lens 2 and the target 3, and a secondary electron detector 9 is placed between the deceleration electrode 8 and the target 3. be done. With this configuration, the surface of the target 3 is not directly exposed to the deceleration electric field, making it possible to detect secondary electrons. Also, target 3
Even if the ion beam is moved, the deceleration electric field will not be disturbed and the ion beam will not be improperly deflected.

(発明が解決しようとする課題) 第4図は、第3図の構成における対物レンズ2゜減速電
極8.ターゲット3の近傍の軸上ポテンシャルを示して
いる。への線は減速電極8がない場合、Bの線は、減速
電極を配置した場合である。
(Problem to be Solved by the Invention) FIG. 4 shows the objective lens 2° deceleration electrode 8. The on-axis potential near target 3 is shown. The line B shows the case where the deceleration electrode 8 is not provided, and the line B shows the case where the deceleration electrode 8 is provided.

この例では、イオンビームの加速エネルギーは30kV
であり、ランディングエネルギーは1kVである。への
線では、ポテンシャル分布が直線的であり、対物レンズ
および減速電界によるレンズの収差は低い。一方、Bの
線ではポテンシャルはターゲット3からかなり離れた位
置で略1kV程度まで低下しており、減速電界によるレ
ンズの収差は高くなると共に、この急なボテンシ(・ル
変化により、イオンビームの集束点がターゲット3表面
よりも前方となってしまう。
In this example, the acceleration energy of the ion beam is 30kV
, and the landing energy is 1 kV. In the line to , the potential distribution is linear and the lens aberrations due to the objective lens and the retarding electric field are low. On the other hand, in line B, the potential drops to approximately 1 kV at a position quite far from the target 3, and the aberration of the lens due to the deceleration electric field increases, and this sudden change in potency causes the ion beam to become focused. The point ends up being in front of the target 3 surface.

本発明はこのような点に鑑みてなされたもので、その目
的は、収差の低い減速電場を形成することができる荷電
粒子ビーム装置を実現することにある。
The present invention has been made in view of these points, and its purpose is to realize a charged particle beam device that can form a deceleration electric field with low aberrations.

(課題を解決するための手段) 本発明に基づく荷電粒子ビーム装置は、荷電粒子ビーム
源と、荷電粒子ビーム源から発生して加速された荷電粒
子ビームをターゲット上に細く集束するための集束レン
ズと、集束レンズとターゲットとの間に荷電粒子ビーム
を減速する減速電場を介り゛させる減速手段と、集束レ
ンズとターゲットとの間に配置され、ターゲットと略同
電位の減速電極とを備えた荷電粒子ビーム装置において
、集束レンズと減速電極との間に補助電極を配置し、こ
の補助電極に電圧を印加するにうに構成したことを特徴
としている。
(Means for Solving the Problems) A charged particle beam device based on the present invention includes a charged particle beam source and a focusing lens for narrowly focusing a charged particle beam generated from the charged particle beam source and accelerated onto a target. a deceleration means for interposing a deceleration electric field that decelerates the charged particle beam between the focusing lens and the target; and a deceleration electrode disposed between the focusing lens and the target and having approximately the same potential as the target. The charged particle beam device is characterized in that an auxiliary electrode is disposed between the focusing lens and the deceleration electrode, and a voltage is applied to the auxiliary electrode.

(作用) 集束レンズとターゲットとの間に減速電極を配置し、更
に、集束レンズと減速電極との間に補助電極を配置し、
この補助電極に高電圧を印加して減速電界による収差を
少なくする。
(Function) A deceleration electrode is placed between the focusing lens and the target, and an auxiliary electrode is placed between the focusing lens and the deceleration electrode,
A high voltage is applied to this auxiliary electrode to reduce aberrations caused by the deceleration electric field.

(実施例) 以下、図面を参照して本発明の実施例を詳細に説明する
。第1図は本発明に塞づくイオンビーム装置の要部を示
しており、第3図の従来装置と同一部分には同一番号を
付しである。この実施例において、第3図の従来装置と
相異する点は、対物レンズ2と減速電極8との間に補助
電極10を59け。この補助電極10に対物レンズ2の
外側電極の電位と、減速電極8の電位の中間の電位を印
加した点である。すなわち、電源11.12ににって、
ターゲット3と減速電極8に30kVP?度の減速電圧
を印加し、電源11によって補助電極10には、例えば
、10kVが印加される。
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows the main parts of an ion beam apparatus according to the present invention, and the same parts as those of the conventional apparatus shown in FIG. 3 are given the same numbers. This embodiment is different from the conventional device shown in FIG. 3 in that an auxiliary electrode 10 is provided between the objective lens 2 and the deceleration electrode 8. This is the point where a potential intermediate between the potential of the outer electrode of the objective lens 2 and the potential of the deceleration electrode 8 is applied to the auxiliary electrode 10. That is, at power supply 11.12,
30kVP to target 3 and deceleration electrode 8? A deceleration voltage of, for example, 10 kV is applied to the auxiliary electrode 10 by the power source 11.

このように構成することにより対物レンズおよび減速電
界による収差は著しく減少する。次の第1表は、計算に
よって求めた色収差係数CCおよび倍率Mを示したもの
で、■は対物レンズ2とターゲット3との間でイオンビ
ームを減速し、減速電極と補助電極とが配置されていな
い場合、■は減速電極8が設けられた場合、■および■
は減速電極8と補助電極の両方が配置された場合である
With this configuration, aberrations caused by the objective lens and the deceleration electric field are significantly reduced. Table 1 below shows the calculated chromatic aberration coefficient CC and magnification M. ■ indicates that the ion beam is decelerated between the objective lens 2 and the target 3, and the deceleration electrode and auxiliary electrode are arranged. If not, ■, if deceleration electrode 8 is provided, ■ and ■
This is the case where both the deceleration electrode 8 and the auxiliary electrode are arranged.

いずれの場合もイオンビームの加速電圧は30kv1ラ
ンデイングエネルギーは1kVである。又、■の場合の
補助電極電位は10kV1■の場合の補助電極の電位は
5kVである。
In either case, the acceleration voltage of the ion beam is 30 kV, and the landing energy is 1 kV. Further, the potential of the auxiliary electrode in the case of ■ is 10 kV, and the potential of the auxiliary electrode in the case of ■ is 5 kV.

第  1  表 Cc   M ■ 0,9 0,31 ■ 3.5 0.18 ■ 1,0 0,25 ■ 1,4 −0.27 上記第1表により、補助電極10@設け、この補助?1
!極に電圧を印加することによって補助電極を段【ノな
い場合(■)に比べ、色収差係数を箸しく小さくするこ
とができることが分かる。又倍率も減速電場を設けない
場合(■)に近い値どなり、集束点が苔しく変化するこ
とは防止される。
Table 1 Cc M ■ 0,9 0,31 ■ 3.5 0.18 ■ 1,0 0,25 ■ 1,4 -0.27 According to Table 1 above, auxiliary electrode 10@ is provided, and this auxiliary ? 1
! It can be seen that by applying a voltage to the pole, the chromatic aberration coefficient can be significantly reduced compared to the case (■) without the auxiliary electrode. Also, the magnification is close to the value when no deceleration electric field is provided (■), and the focal point is prevented from changing in a mossy manner.

L記実施例では、補助電極を1枚設けたが、この補助電
極を多段に設けても良い。又、イオンご−ム装置を例に
説明したが、ターゲットに減速して電子ビームを照射す
るようにした電子ビーム装はにも本発明を適用すること
ができる。
In the embodiment L, one auxiliary electrode is provided, but this auxiliary electrode may be provided in multiple stages. Further, although the ion beam device has been described as an example, the present invention can also be applied to an electron beam device that irradiates a target with an electron beam at a reduced speed.

(発明の効果) 以上詳細に説明したように、本発明では、集束レンズと
減速電極どの間に補助′iri極を配置し、この補助電
極に電圧を印加するように構成したので、減速電界の収
差を低減することができ、又、減速電場によるビームの
集束点の変化を少なくすることができる。
(Effects of the Invention) As explained in detail above, in the present invention, an auxiliary pole is arranged between the focusing lens and the deceleration electrode, and a voltage is applied to the auxiliary electrode, so that the deceleration electric field is Aberrations can be reduced, and changes in the focal point of the beam due to the deceleration electric field can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例であるイオンビーム装置の
要部を示す図、第2図および第3図は従来のイオンビー
ム装置を示す図、第4図は第3図の装置の軸上ポテンシ
ャル分布を示す図である。 1・・・イオン源     2川対物レンズ3・・・タ
ーゲット    4・・・電源5・・・中心電極   
  6・・・外側電極7・・・電源       8・
・・減速電極9・・・2次電子検出i%f  1o・・
・補助電極11.12・・・電源 特許出願人  日  本  電  子  株  式  
会  礼式  理  人    弁  理  士   
 井  島  藤  冶外1名 第2じ口 第3図 第4 図 植置
FIG. 1 is a diagram showing the main parts of an ion beam device that is an embodiment of the present invention, FIGS. 2 and 3 are diagrams showing a conventional ion beam device, and FIG. FIG. 3 is a diagram showing an axial potential distribution. 1... Ion source 2 Objective lens 3... Target 4... Power source 5... Center electrode
6... Outer electrode 7... Power supply 8.
...Deceleration electrode 9...Secondary electron detection i%f 1o...
・Auxiliary electrode 11.12... Power supply patent applicant Japan Electronics Co., Ltd.
Ceremony for the meeting Patent attorney
Fuji Ijima, 1 person, 2nd entrance, figure 3, figure 4, planting

Claims (1)

【特許請求の範囲】[Claims]  荷電粒子ビーム源と、荷電粒子ビーム源から発生して
加速された荷電粒子ビームをターゲット上に細く集束す
るための集束レンズと、集束レンズとターゲットとの間
に荷電粒子ビームを減速する減速電場を発生させる減速
手段と、集束レンズとターゲットとの間に配置され、タ
ーゲットと略同電位の減速電極とを備えた荷電粒子ビー
ム装置において、集束レンズと減速電極との間に補助電
極を配置し、補助電極に電圧を印加するように構成した
ことを特徴とする荷電粒子ビーム装置。
A charged particle beam source, a focusing lens for narrowly focusing the accelerated charged particle beam generated from the charged particle beam source onto a target, and a deceleration electric field for decelerating the charged particle beam between the focusing lens and the target. In a charged particle beam device comprising a deceleration means for generating and a deceleration electrode arranged between a focusing lens and a target and having substantially the same potential as the target, an auxiliary electrode is arranged between the focusing lens and the deceleration electrode, A charged particle beam device characterized in that it is configured to apply a voltage to an auxiliary electrode.
JP16962988A 1988-07-06 1988-07-06 Charged particle beam device Pending JPH0218848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16962988A JPH0218848A (en) 1988-07-06 1988-07-06 Charged particle beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16962988A JPH0218848A (en) 1988-07-06 1988-07-06 Charged particle beam device

Publications (1)

Publication Number Publication Date
JPH0218848A true JPH0218848A (en) 1990-01-23

Family

ID=15890043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16962988A Pending JPH0218848A (en) 1988-07-06 1988-07-06 Charged particle beam device

Country Status (1)

Country Link
JP (1) JPH0218848A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216491A (en) * 2003-10-17 2011-10-27 Applied Materials Inc Ion implanter electrode
WO2014057918A1 (en) * 2012-10-12 2014-04-17 株式会社日立ハイテクノロジーズ Ion-beam device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224254A (en) * 1985-03-28 1986-10-04 Jeol Ltd Charged particle beam device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224254A (en) * 1985-03-28 1986-10-04 Jeol Ltd Charged particle beam device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216491A (en) * 2003-10-17 2011-10-27 Applied Materials Inc Ion implanter electrode
WO2014057918A1 (en) * 2012-10-12 2014-04-17 株式会社日立ハイテクノロジーズ Ion-beam device
JP2014078458A (en) * 2012-10-12 2014-05-01 Hitachi High-Technologies Corp Ion beam device

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