JPH02187075A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPH02187075A
JPH02187075A JP1006781A JP678189A JPH02187075A JP H02187075 A JPH02187075 A JP H02187075A JP 1006781 A JP1006781 A JP 1006781A JP 678189 A JP678189 A JP 678189A JP H02187075 A JPH02187075 A JP H02187075A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
peripheral circuit
semiconductor device
circuit components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1006781A
Other languages
Japanese (ja)
Inventor
Takeshi Sekiguchi
剛 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP1006781A priority Critical patent/JPH02187075A/en
Publication of JPH02187075A publication Critical patent/JPH02187075A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

PURPOSE:To obtain the interchangeability of a receptacle with a device having no built-in peripheral circuit component by a method wherein a piercing hole is drilled at the center of a board and a protrusion formed on a bottom case is inserted through the piercing hole and an optical semiconductor element is mounted on the top of the protrusion. CONSTITUTION:A protrusion 11a formed on a bottom case 11 is inserted through a piercing hole 12a drilled at the center of an insulating board 12 on which peripheral circuit components 13a and 13b are mounted so as to make it protrude from the upper surface of the insulating board 12 and an optical semiconductor element 16 is mounted on the top of the protrusion 11a. With this constitution, as the optical semiconductor element 16 can be provided most closely to a window glass 18, it is not necessary to expand a mutual distance L2 between the optical semiconductor element 16 and the window glass 18 in order to avoid the interference between the window glass 18 and the peripheral circuit components 13a and 13b, so that the mutual distance L2 can be determined freely. Therefore, the optical semiconductor device can be coupled with an optical fiber without degrading a light coupling efficiency by using a receptacle for an optical semiconductor device having no built-in peripheral circuit component.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光ファイバと光結合される発光素子若しくは
受光素子といった光半導体素子と、これに電気接続され
るトランジスタ、チップコンデンサー、チップ抵抗等の
周辺回路部品とを有する光半導体装置に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to optical semiconductor devices such as light emitting devices or light receiving devices that are optically coupled to optical fibers, and transistors, chip capacitors, chip resistors, etc. that are electrically connected thereto. The present invention relates to an optical semiconductor device having peripheral circuit components.

〔従来の技術〕[Conventional technology]

第3図に、従来から知られている光半導体装置を示す。 FIG. 3 shows a conventionally known optical semiconductor device.

従来の光半導体装置は、図示したように、チップ状の光
半導体素子(発光素子又は受光素子)1を単体で絶縁基
板2上に実装し、この絶縁基板2を金属製のボトムケー
ス3上に固定した後、窓ガラス4が嵌め込まれた金属製
の窓付きキャップ5で覆って構成されている。
As shown in the figure, in a conventional optical semiconductor device, a chip-shaped optical semiconductor element (light emitting element or light receiving element) 1 is mounted singly on an insulating substrate 2, and this insulating substrate 2 is mounted on a metal bottom case 3. After being fixed, it is covered with a metal window cap 5 into which a window glass 4 is fitted.

このように構成された光半導体装置は、光ファイバと光
結合され、光通信に用いられる。
The optical semiconductor device configured in this manner is optically coupled with an optical fiber and used for optical communication.

第4図に、上述した光半導体装置と先ファイバとを光結
合する際に用いるレセプタクル6を示す。
FIG. 4 shows a receptacle 6 used when optically coupling the above-described optical semiconductor device and a destination fiber.

レセプタクル6は、略円筒形に形成され、その−端にて
、光ファイバ7の一端を担持し、その他端には、上述し
た光半導体装置に嵌脱自在に外嵌する嵌合凹部が形成さ
れている。レセプタクル6内には、光半導体装置の光半
導体素子(発光素子または受光素子)1と光ファイバ7
とを光結合するレンズ8が設けられている。そして、こ
のレンズ8の焦点距離に合わせて、光ファイバ7と光半
導体装置との間における光の結合効率が最高となるよう
に、レンズ8と光半導体装置の窓ガラス4との間隔S1
及び光ファイバ7の一端とレンズ8との間隔S2が定め
られている。
The receptacle 6 is formed into a substantially cylindrical shape, supports one end of the optical fiber 7 at its lower end, and has a fitting recess formed at the other end into which the above-mentioned optical semiconductor device is removably fitted. ing. Inside the receptacle 6 are an optical semiconductor element (light emitting element or light receiving element) 1 of an optical semiconductor device and an optical fiber 7.
A lens 8 is provided for optically coupling the two. Then, in accordance with the focal length of this lens 8, a distance S1 between the lens 8 and the window glass 4 of the optical semiconductor device is set so that the coupling efficiency of light between the optical fiber 7 and the optical semiconductor device is maximized.
And a distance S2 between one end of the optical fiber 7 and the lens 8 is determined.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、最近、上述した光半導体装置に、その周辺回
路部品を内蔵させることが要望されている。周辺回路部
品は、例えば、光半導体素子1としてフォトダイオード
等の受光素子を有した光半導体装置の場合には、受光素
子から取り出される信号を増幅するための増幅回路を構
成するアンプIC,チップコンデンサー、電界効果トラ
ンジスタ(FET)、チップ抵抗等の部品であり、光半
導体素子1としてレーザダイオード等の発光素子を有し
た光半導体装置の場合には、発光素子を駆動するための
駆動回路を構成する部品である。
Incidentally, recently there has been a demand for the above-mentioned optical semiconductor device to have peripheral circuit components built therein. For example, in the case of an optical semiconductor device having a light-receiving element such as a photodiode as the optical semiconductor element 1, the peripheral circuit components include an amplifier IC and a chip capacitor that constitute an amplifier circuit for amplifying a signal extracted from the light-receiving element. , a field effect transistor (FET), a chip resistor, etc., and in the case of an optical semiconductor device having a light emitting element such as a laser diode as the optical semiconductor element 1, it constitutes a drive circuit for driving the light emitting element. It is a part.

しかし、第5図に示したように、これら周辺回路部品1
0a、10bを、単に、光半導体素子1が実装されてい
る絶縁基板2上に実装したのでは、周辺回路部品の高さ
寸法(例えば、アンプICで200〜600μm1チツ
プコンデンサーで0゜6〜1.2mte)が、光半導体
素子1の高さ寸法(フォトダイオードで140μm)よ
りも大きいため、窓付きキャップらと周辺回路部品10
a若しくは10bとの干渉を避けるのに、窓付きキャッ
プ5の高さ寸法を大きくする必要が生ずる。この為、窓
付きキャップ5に嵌め込まれた窓ガラス4と光半導体素
子1との間隔り。(第3図に示す)がり、に拡張される
こととなる。この結果、第5図に示した光半導体装置を
、第4図に示したレセプタクル6の嵌合凹部に嵌め合わ
せた場合、1ノンズ8と光半導体装置の窓ガラス4との
間隔S1は変わらないが、窓ガラス4と光半導体素子1
との間隔がり。からし、に拡張された分、レンズ8と光
半導体素子1の相互間の光路長が長くなって、光の結合
効率が低下する不都合があり、この結合効率の低下を防
止するためには、それ専用に、レンズ8と光半導体装置
の窓ガラス4との間隔 Sを短縮化(−たレセプタクル
6を用意しなければならなかった。
However, as shown in FIG.
If 0a and 10b are simply mounted on the insulating substrate 2 on which the optical semiconductor element 1 is mounted, the height of the peripheral circuit components (e.g., 200 to 600 μm for an amplifier IC, 0°6 to 1 μm for a single chip capacitor) .2 mte) is larger than the height of the optical semiconductor element 1 (140 μm for a photodiode), so the window cap and peripheral circuit components 10
In order to avoid interference with a or 10b, it becomes necessary to increase the height dimension of the window cap 5. Therefore, the distance between the window glass 4 fitted into the window cap 5 and the optical semiconductor element 1 is increased. (shown in Figure 3) will be expanded to . As a result, when the optical semiconductor device shown in FIG. 5 is fitted into the fitting recess of the receptacle 6 shown in FIG. However, the window glass 4 and the optical semiconductor element 1
The gap between the two. The optical path length between the lens 8 and the optical semiconductor element 1 becomes longer due to the expansion of the optical semiconductor element 1, which causes a disadvantage that the coupling efficiency of light decreases.In order to prevent this decrease in the coupling efficiency, For this purpose, it was necessary to prepare a receptacle 6 with a shortened distance S between the lens 8 and the window glass 4 of the optical semiconductor device.

そこで、本発明は、上述の事情に鑑み、周辺回路部品を
内蔵させても、それ専用のレセプタクルを必要とせず、
周辺回路部品が内蔵されていない従来の光半導体装置と
の互換性を有し、周辺回路部品が内蔵されていない光半
導体装置用のレセプタクルを用いても、光ファイバとの
光の結合効率が低下することのない光半導体装置を提供
することを目的としている。
Therefore, in view of the above-mentioned circumstances, the present invention does not require a dedicated receptacle even if peripheral circuit components are built-in.
It is compatible with conventional optical semiconductor devices that do not have built-in peripheral circuit components, and even when using a receptacle for optical semiconductor devices that do not have built-in peripheral circuit components, the coupling efficiency of light with optical fibers decreases. The purpose of the present invention is to provide an optical semiconductor device that does not require any damage.

〔課題を解決するための手段〕[Means to solve the problem]

上述の目的を達成するため、本発明による光半導体装置
においては、周辺回路部品が実装される基板の中央部に
貫通孔を穿ち、この基板を担持するボトムケースに凸部
を形成し、この凸部を貫通孔に挿通して、その頂部に光
半導体素子を実装した構成となっている。
In order to achieve the above object, in the optical semiconductor device according to the present invention, a through hole is formed in the center of a substrate on which peripheral circuit components are mounted, a convex portion is formed in a bottom case supporting this substrate, and the convex portion is formed in a bottom case that supports the substrate. The structure is such that the optical semiconductor element is mounted on the top of the through hole.

〔作用〕[Effect]

この様な構成とすることによって、周辺回路部品よりも
高い位置に光半導体素子を配置することが可能となり、
光半導体素子を窓ガラスに近付けることが出来るように
なる。
With this configuration, it is possible to place the optical semiconductor element at a higher position than the peripheral circuit components,
It becomes possible to bring the optical semiconductor element closer to the window glass.

〔実施例〕〔Example〕

以下、本発明の実施例について第1図及び第2図を参照
しつつ、説明する。
Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.

第1図は、受光素子を有する光半導体装置に、本発明を
適用した実施例の縦断面図であり、第2図は、第1図に
示した光半導体装置の分部斜視図である。
FIG. 1 is a longitudinal sectional view of an embodiment in which the present invention is applied to an optical semiconductor device having a light receiving element, and FIG. 2 is a partial perspective view of the optical semiconductor device shown in FIG. 1.

図示した光半導体装置は、ボトムケース11と、これに
担持される絶縁基板12と、絶縁基板12上に実装され
る周辺回路部品13a及び13b等と、リード線15と
、光半導体素子16と、これらを光半導体素子16の上
方から覆ってボトムケース11に固定される窓付きキャ
ップ17とを備えている。
The illustrated optical semiconductor device includes a bottom case 11, an insulating substrate 12 supported by the bottom case 11, peripheral circuit components 13a and 13b etc. mounted on the insulating substrate 12, a lead wire 15, an optical semiconductor element 16, A cap 17 with a window is provided which covers the optical semiconductor element 16 from above and is fixed to the bottom case 11.

ボトムケース11は、金属製であり、これには、数本の
リード線15が、ケースの接地用のリード線を除いて、
樹脂等によって絶縁されつつ、固定されている。ボトム
ケース11の上面には、絶縁基板12が固定されている
。また、絶縁基板12の上面には、周辺回路部品13a
及び13b等が実装されている。なお、図示は省略した
が、絶縁基板12の上面には、メタライズパターンが、
スクリーンを用いた厚膜印刷、或いは、蒸着、スパッタ
による薄膜形成等の方法によって形成されている。
The bottom case 11 is made of metal, and has several lead wires 15, except for a lead wire for grounding the case.
It is fixed and insulated with resin or the like. An insulating substrate 12 is fixed to the upper surface of the bottom case 11. Further, peripheral circuit components 13a are provided on the upper surface of the insulating substrate 12.
and 13b etc. are implemented. Although not shown in the drawings, a metallized pattern is formed on the upper surface of the insulating substrate 12.
It is formed by a method such as thick film printing using a screen, or thin film formation by vapor deposition or sputtering.

絶縁基板12の中央部には、貫通孔12aが穿設されて
おり、また、ボトムケース11の中央部には、凸部11
aが例えばプレス成型されている。
A through hole 12a is formed in the center of the insulating substrate 12, and a convex portion 11 is formed in the center of the bottom case 11.
For example, a is press-molded.

凸部11aは、貫通孔12aに挿通され、その頂部は絶
縁基板12の上面から上方に突出しており、その頂部に
は、フォトダイオード等のチップ状の光半導体素子16
がダイボンディングされている。
The convex portion 11a is inserted into the through hole 12a, and the top thereof protrudes upward from the upper surface of the insulating substrate 12, and a chip-shaped optical semiconductor element 16 such as a photodiode is mounted on the top of the convex portion 11a.
is die bonded.

なお、頂部上面は、光半導体素子16のダイボンディン
グを容易にするため平坦に形成されている。
Note that the upper surface of the top portion is formed flat to facilitate die bonding of the optical semiconductor element 16.

光半導体素子16は、ワイヤボンディングによって周辺
回路部品13a、13b若しくは絶縁基板12上のメタ
ライズパターンと接続されており、また、周辺回路部品
13a、13b若しくは絶縁基板12上のメタライズパ
ターンは、ワイヤボンディングによってリード線15に
接続されている。
The optical semiconductor element 16 is connected to the peripheral circuit components 13a, 13b or the metallized pattern on the insulating substrate 12 by wire bonding, and the peripheral circuit components 13a, 13b or the metallized pattern on the insulating substrate 12 are connected to It is connected to the lead wire 15.

周辺回路部品13a及び13bは、例えば、電界効果ト
ランジスタ及びチップ抵抗であり、メタライズパターン
によって相互に接続され、図示しない他の周辺回路部品
と共に、光半導体素子16から取り出される信号を増幅
するための増幅回路を構成する。
The peripheral circuit components 13a and 13b are, for example, field effect transistors and chip resistors, and are connected to each other by a metallized pattern, and are used together with other peripheral circuit components (not shown) to amplify the signal taken out from the optical semiconductor element 16. Configure the circuit.

絶縁基板12、周辺回路部品13aq 13b%光半導
体素子16等は、第1図に示したように、窓付きキャッ
プ17によって覆われている。窓付きキャップ17は、
略円筒状の金属製の部材で、その底部にてボトムケース
11の外周部に外嵌して固定される。窓付きキャップ1
7の頂部には、光半導体索子16の上面と対向して窓ガ
ラス18が嵌め込まれている。
The insulating substrate 12, peripheral circuit components 13aq 13b% optical semiconductor element 16, etc. are covered with a window cap 17, as shown in FIG. The window cap 17 is
It is a substantially cylindrical metal member, and its bottom part is fitted onto and fixed to the outer peripheral part of the bottom case 11. Cap with window 1
A window glass 18 is fitted into the top of the optical semiconductor cable 7 so as to face the top surface of the optical semiconductor cable 16 .

上述したように構成された本発明による光半導体装置に
おいては、ボトムケース11に形成した凸部11aを、
絶縁基板12の中央部に穿設された貫通孔11aに挿通
し、絶縁基板12の上面がら突出させ、突出した凸部1
1aの頂部に光半導体素子16を実装しているので、光
半導体素子16を最も窓ガラス18に近接させて配置で
きる。
In the optical semiconductor device according to the present invention configured as described above, the convex portion 11a formed on the bottom case 11 is
A protruding portion 1 is inserted into a through hole 11a formed in the center of the insulating substrate 12 and protrudes from the upper surface of the insulating substrate 12.
Since the optical semiconductor element 16 is mounted on the top of 1a, the optical semiconductor element 16 can be placed closest to the window glass 18.

これによって、窓ガラス18と周辺回路部品13a、1
3bとの干渉を避けるために、光半導体素子16と窓ガ
ラス18との相互間隔L2を拡張する必要はなくなり、
該相互間隔L2を自由に決定することができる。従って
、L2を第3図に示したし。に一致きせることか容易に
でき、従来の周辺回路部品が内蔵されていない光半導体
装置用のレセプタクルを用いて、光の結合効率を低下さ
せることなく、光ファイバと光結合させることができる
As a result, the window glass 18 and the peripheral circuit components 13a, 1
In order to avoid interference with 3b, it is no longer necessary to extend the mutual distance L2 between the optical semiconductor element 16 and the window glass 18,
The mutual spacing L2 can be freely determined. Therefore, L2 is shown in FIG. The receptacle for optical semiconductor devices, which does not have conventional peripheral circuit components built in, can be used to optically couple optical fibers without reducing the optical coupling efficiency.

なお、上述した実施例においては、光半導体素子15と
して、フォトダイオード等の受光素子を用いているが、
光半導体素子15は、レーザダイオード等の発光素子で
あってもよい。この場合には、周辺回路部品は、発光素
子を駆動する駆動回路を構成する部品となる。
Note that in the above embodiment, a light receiving element such as a photodiode is used as the optical semiconductor element 15;
The optical semiconductor element 15 may be a light emitting element such as a laser diode. In this case, the peripheral circuit components are components that constitute a drive circuit that drives the light emitting element.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明による光半導体装置におい
ては、周辺回路部品が実装される基板の中央部に貫通孔
を穿ち、この基板を担持するボトムケースに凸部を形成
し、この凸部を貫通孔に挿通して、その頂部に光半導体
素子を実装した構成となっているので、周辺回路部品よ
りも高い位置に光半導体素子を配置することが可能とな
り、光半導体素子を窓ガラスに近接させることができる
As explained above, in the optical semiconductor device according to the present invention, a through hole is formed in the center of the board on which peripheral circuit components are mounted, a convex part is formed in the bottom case that supports this board, and this convex part is formed in the bottom case that supports the board. Since the optical semiconductor element is inserted into the through hole and mounted on the top, it is possible to place the optical semiconductor element at a higher position than the peripheral circuit components, allowing the optical semiconductor element to be placed close to the window glass. can be done.

それゆえ、光半導体素子よりも高さ寸法が大きい周辺回
路部品を内蔵させることによって光半導体素子と窓ガラ
スとの相互間隔が拡張することを防止でき、光半導体素
子と窓ガラスとの間隔を、周辺回路部品が内蔵されてい
ない従来の光半導体装置のそれに一致させることが可能
となる。よって、周辺回路部品が内蔵されていない従来
の光半導体装置との互換性を有するようになり、周辺回
路部品が内蔵されていない光半導体装置用に作製された
レセプタクルを用いても、光ファイバとの光の結合効率
が低下することがない。
Therefore, by incorporating peripheral circuit components whose height dimension is larger than that of the optical semiconductor element, it is possible to prevent the mutual distance between the optical semiconductor element and the window glass from increasing, and to reduce the distance between the optical semiconductor element and the window glass. It becomes possible to match that of a conventional optical semiconductor device in which peripheral circuit components are not built-in. Therefore, it is now compatible with conventional optical semiconductor devices that do not have built-in peripheral circuit components, and even if a receptacle manufactured for an optical semiconductor device that does not have built-in peripheral circuit components is used, it will not work with optical fibers. The coupling efficiency of light does not decrease.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による光半導体装置の縦断面図、第2図
は第1図に示した本発明による光半導体装置の部分斜視
図、第3図は従来の光半導体素子を示した縦断面図、第
4図は光半導体装置と光ファイバをレセプタクルを用い
て光結合したところを示した部分断面斜視図、第5図は
第3図に示した光半導体装置の絶縁基板上に周辺回路部
品を実装した場合の縦断面図である。 1.16・・・光半導体素子、2.12・・・絶縁基板
、3.11・・・ボトムケース、4.18・・・窓ガラ
ス、5.17・・・窓付きキャップ、6・・・レセプタ
クル、7・・・光ファイバ、8・・・レンズ、10 a
、10 b+13a、13b・・・周辺回路部品、11
a・・・凸部、12a・・・貫通孔、15・・・リード
線。 莢 )牝 例 第 図 爽づダJ 第1図 役   天   づア〕 第3図 七ギ゛瀉」本$1どレセプタクルし 第4図
FIG. 1 is a vertical cross-sectional view of an optical semiconductor device according to the present invention, FIG. 2 is a partial perspective view of the optical semiconductor device according to the present invention shown in FIG. 1, and FIG. 3 is a vertical cross-sectional view of a conventional optical semiconductor element. Figure 4 is a partial cross-sectional perspective view showing optical coupling between an optical semiconductor device and an optical fiber using a receptacle, and Figure 5 shows peripheral circuit components on the insulating substrate of the optical semiconductor device shown in Figure 3. FIG. 1.16... Optical semiconductor element, 2.12... Insulating substrate, 3.11... Bottom case, 4.18... Window glass, 5.17... Cap with window, 6...・Receptacle, 7... Optical fiber, 8... Lens, 10 a
, 10 b+13a, 13b... peripheral circuit components, 11
a...Convex portion, 12a...Through hole, 15...Lead wire. Pod) Female Example Figure 1 Sozuda J Figure 1 Role Ten Zua] Figure 3 Seven-Gear" Book $1 Receptacle Figure 4

Claims (1)

【特許請求の範囲】 光半導体素子を収容したケースに設けられた窓を通して
光ファイバと前記光半導体素子とが光結合される光半導
体装置であって、 前記光半導体素子に電気接続される周辺回路部品と、前
記周辺回路部品が実装されると共に、その中央部に貫通
孔が穿設された基板と、前記基板を担持して前記ケース
の下部を構成すると共に、前記貫通孔に挿入される凸部
を有したボトムケースとを備え、前記貫通孔に挿入され
た前記凸部の頂部に前記光半導体素子を実装したことを
特徴とする光半導体装置。
[Scope of Claims] An optical semiconductor device in which an optical fiber and the optical semiconductor element are optically coupled through a window provided in a case housing the optical semiconductor element, comprising a peripheral circuit electrically connected to the optical semiconductor element. a component, a substrate on which the peripheral circuit component is mounted and a through hole is bored in the center thereof, and a protrusion that supports the substrate and forms a lower part of the case and is inserted into the through hole. What is claimed is: 1. An optical semiconductor device, comprising: a bottom case having a bottom case, the optical semiconductor element being mounted on the top of the convex portion inserted into the through hole.
JP1006781A 1989-01-13 1989-01-13 Optical semiconductor device Pending JPH02187075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1006781A JPH02187075A (en) 1989-01-13 1989-01-13 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1006781A JPH02187075A (en) 1989-01-13 1989-01-13 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPH02187075A true JPH02187075A (en) 1990-07-23

Family

ID=11647715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1006781A Pending JPH02187075A (en) 1989-01-13 1989-01-13 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPH02187075A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6264979B1 (en) * 1994-05-10 2001-07-24 Pal Svedman Transdermal device for administration through de-epithelialized skin
JP2006261442A (en) * 2005-03-17 2006-09-28 Hamamatsu Photonics Kk Cap member and optical semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6264979B1 (en) * 1994-05-10 2001-07-24 Pal Svedman Transdermal device for administration through de-epithelialized skin
JP2006261442A (en) * 2005-03-17 2006-09-28 Hamamatsu Photonics Kk Cap member and optical semiconductor device

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