JPH02181984A - Manufacture of superconducting circuit - Google Patents
Manufacture of superconducting circuitInfo
- Publication number
- JPH02181984A JPH02181984A JP1002340A JP234089A JPH02181984A JP H02181984 A JPH02181984 A JP H02181984A JP 1002340 A JP1002340 A JP 1002340A JP 234089 A JP234089 A JP 234089A JP H02181984 A JPH02181984 A JP H02181984A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- ion beam
- ions
- superconducting thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 22
- 150000002500 ions Chemical class 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000002238 attenuated effect Effects 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は超電導回路、詳しくは超電導薄膜回路、の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Field of Application> The present invention relates to a method for manufacturing a superconducting circuit, specifically a superconducting thin film circuit.
〈従来の技術〉
超電導薄膜回路を製作するには、従来、基板上にＮｂ等
の超電導体を蒸着させて−様な超電導薄膜を形成し、次
いでその表面にレジストを塗布し、露光および現像後に
エツチングを行い、更にレジストを除去するという工程
により、所望のパターンを有する超電導薄膜を得ていた
。<Conventional technology> Conventionally, in order to produce a superconducting thin film circuit, a superconducting material such as Nb is deposited on a substrate to form a -like superconducting thin film, a resist is then applied to the surface, and after exposure and development, A superconducting thin film having a desired pattern was obtained by etching and then removing the resist.
〈発明が解決しようとする課題〉
上述のような従来の超電導薄膜回路の製造方法によると
、工程が多く繁雑で、完成までに長時間を要するととも
に、光露光のためにはフォトマスクを製作する必要があ
り、また、薄膜を人気中にさらし、あるいは大気中と真
空中を往復させる工程があるため、大気からの吸着汚染
の惧れもある。<Problems to be Solved by the Invention> According to the conventional manufacturing method of superconducting thin film circuits as described above, there are many and complicated steps, it takes a long time to complete the circuit, and it is necessary to manufacture a photomask for light exposure. In addition, since there is a process in which the thin film is exposed to heat or sent back and forth between the atmosphere and vacuum, there is a risk of adsorption contamination from the atmosphere.
本発明の目的は、簡単な工程で、しかも、工程途中で超
電導薄膜を大気にさらす必要のない、超電導薄膜回路の
製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a superconducting thin film circuit using simple steps and which does not require exposing the superconducting thin film to the atmosphere during the process.
〈課題を解決するための手段〉
上記の目的を達成するため、本発明では、実施例に対応
する第１図に示すように、基板１上の表面に、超電導薄
膜の素材をイオン化して作った集束イオンビームＢを所
定のエネルギに減速して所定パターンで照射することに
より、そのイオンを基板１表面に直接蒸着させる。<Means for Solving the Problems> In order to achieve the above object, in the present invention, as shown in FIG. By decelerating the focused ion beam B to a predetermined energy and irradiating it in a predetermined pattern, the ions are deposited directly onto the surface of the substrate 1.
く作用〉
集束イオンビームをターゲットの直前であるエネルギ以
下に減速すると、そのイオンはクーゲノトの表面に蒸着
して膜を作る。Effect> When the focused ion beam is decelerated to below a certain energy just before the target, the ions are deposited on the surface of the Kugenot, forming a film.
本発明はこの性質を利用したもので、超電導薄膜素材を
イオン化して集束イオンビームを作り、これを直接蒸着
可能なエネルギにまで減速して基板１上に所望のパター
ンで照射すれば、基板１の表面にそのパターンの超電導
薄膜２が形成される。The present invention takes advantage of this property, and by ionizing a superconducting thin film material to create a focused ion beam, decelerating the beam to an energy level that allows direct vapor deposition, and irradiating it onto the substrate 1 in a desired pattern, the substrate 1 can be irradiated with a desired pattern. A superconducting thin film 2 having the pattern is formed on the surface of the superconducting film 2.
〈実施例〉
第１図は本発明実施例の工程説明図で、第２図はその工
程に使用される減速機能付の集束・イオンビーム装置の
構造説明図である。<Embodiment> FIG. 1 is a process explanatory diagram of an embodiment of the present invention, and FIG. 2 is a structural diagram of a focused ion beam device with a deceleration function used in the process.
まず、石英、Ｓｉ等の基板１の表面を清浄化し、これを
第２図に例示する減速機能付の集束イオンビーム装置の
サンプルステージ１７上に装着する。First, the surface of a substrate 1 made of quartz, Si, etc. is cleaned, and this is mounted on a sample stage 17 of a focused ion beam device with a deceleration function, as illustrated in FIG.
この減速機能付の集束イオンビーム装置は、チャンバ（
図示せず）内に液体金属イオン源１１、引出し電極１２
、静電型レンズ１３ａおよび１３ｂ１マスフイルタ１４
、偏向電極１５、減速電極１６、およびサンプルステー
ジ１７等を設けるとともに、イオンに加速エネルギを与
える加速電源１８と、・イオン源１１と引出し電極１２
間に電位差を与える引出し電源１９、および、イオンに
減速エネルギを与える減速電源２０を備えている。この
構成により、イオン源１１から引出されたイオンビーム
Ｂは静電型レンズ１３ａ、１３ｂで集束されると同時に
、マスフィルタ１４で所望イオンのみが選別されてサン
プルステージ１７に導かれるが、この集束イオンビーム
Ｂがサンプルステージ１７に到達するときのエネルギは
、加速電源１８と減速電源２０との出力電圧差に等しい
ものとなる。This focused ion beam device with deceleration function has a chamber (
(not shown) contains a liquid metal ion source 11 and an extraction electrode 12.
, electrostatic lenses 13a and 13b1 mass filter 14
, a deflection electrode 15, a deceleration electrode 16, a sample stage 17, etc., and an acceleration power supply 18 that provides acceleration energy to ions; an ion source 11 and an extraction electrode 12;
It includes an extraction power source 19 that provides a potential difference between the ions, and a deceleration power source 20 that provides deceleration energy to the ions. With this configuration, the ion beam B extracted from the ion source 11 is focused by the electrostatic lenses 13a and 13b, and at the same time only desired ions are selected by the mass filter 14 and guided to the sample stage 17. The energy when the ion beam B reaches the sample stage 17 is equal to the output voltage difference between the acceleration power source 18 and the deceleration power source 20.
すなわち、集束イオンビームＢは、減速電極１６に近づ
くまでは加速電源１８で与えられるエネルギを持ってい
るが、減速電極１日とサンプルステージ１７の電位を減
速電源２０によって上げると、基板１に入射する集束イ
オンビームＢはその分だけ減速される。従って、減速電
源２０の出力調整により、原理的には、０〜加速電源１
８出力までの間で、連続的に集束イオンビームＢの基板
１への到達エネルギを変化させ得ることになる。That is, the focused ion beam B has the energy given by the acceleration power source 18 until it approaches the deceleration electrode 16, but when the potentials of the deceleration electrode 1 and the sample stage 17 are raised by the deceleration power source 20, the focused ion beam B becomes incident on the substrate 1. The focused ion beam B is decelerated by that amount. Therefore, by adjusting the output of the deceleration power supply 20, in principle, the
This means that the energy that the focused ion beam B reaches the substrate 1 can be changed continuously between up to 8 outputs.
さて、このような装置のチャンバ内を真空引きするとと
もに、イオン源１１に例えばＮｂ−Ｎ合金を封入し、Ｎ
ｂ”イオンをサンプルステージ１６上の基板１に導くよ
うセツティングする。そして、減速電源２０の調節によ
り、Ｎｂ”が基板１の表面に直接蒸着できる程度（２０
０ｅＶ以下程度）に減速した集束イオンビームＢを発生
させる。この減速された集束イオンビームＢを偏向電極
１５で偏向させることにより、第１図に示すようにｕ＋
５．１の表面に所定のパターンで照射する。Now, the chamber of such an apparatus is evacuated, and the ion source 11 is filled with, for example, an Nb-N alloy,
Nb" ions are set to be guided to the substrate 1 on the sample stage 16. Then, by adjusting the deceleration power source 20, the Nb" ions are set to the extent that they can be directly deposited on the surface of the substrate 1 (20
A focused ion beam B decelerated to approximately 0 eV or less is generated. By deflecting this decelerated focused ion beam B with the deflection electrode 15, as shown in FIG.
5. Irradiate the surface of 1 in a predetermined pattern.
これにより、基板１の表面にはそのパターンのＮｂ製の
超電導薄膜２が形成される。As a result, a superconducting thin film 2 made of Nb having the pattern is formed on the surface of the substrate 1.
なお、超電導薄膜２の材質としては、Ｎｂのほか、Ｐｂ
、ＴｃあるいはＶ等を使用することができ、本発明の方
法によってこれらを用いた超電導薄膜回路を製造するこ
とができる。In addition to Nb, the material of the superconducting thin film 2 is Pb.
, Tc, V, etc. can be used, and a superconducting thin film circuit using these can be manufactured by the method of the present invention.
〈発明の効果〉
以上説明したように、本発明によれば、超電導薄膜素材
をイオン化した集束イオンビームを減速して基ヰ反に照
射することによって、そのイオンを基板表面に直接蒸着
させて所望のパターンの超電導薄膜を形成するので、従
来の製造方法に比してその工程を著しく簡略化すること
ができ、製造の所要時間の短縮とコストダウンを達成で
きる。<Effects of the Invention> As explained above, according to the present invention, a focused ion beam that ionizes a superconducting thin film material is decelerated and irradiated onto a substrate, thereby depositing the ions directly onto the surface of the substrate to achieve a desired effect. Since a superconducting thin film with a pattern is formed, the process can be significantly simplified compared to conventional manufacturing methods, and the required manufacturing time and cost can be reduced.
また、従来の製法のようにレジストの塗布工程や露光、
現像工程等を必要とせず、マスクの製作が不要となると
ともに、工程の途中で大気中に超電導薄膜をさらす必要
がなくなり、吸着汚染の惧れがなく、信頼性の高い超電
導回路が得られる。In addition, unlike conventional manufacturing methods, the resist coating process, exposure,
There is no need for a developing process, there is no need to manufacture a mask, there is no need to expose the superconducting thin film to the atmosphere during the process, there is no risk of adsorption contamination, and a highly reliable superconducting circuit can be obtained.
【図面の簡単な説明】
第１図は本発明実施例の工程説明図、
第２図はその工程で使用される減速機能付の集束イオン
ビーム装置の構造説明図である。
１・・・基板
２ ・ ・ 」＝【１′１１１：≦（１【ンＷ膜Ｂ・
・・集束イオンビームBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a process explanatory diagram of an embodiment of the present invention, and FIG. 2 is a structural diagram of a focused ion beam device with a deceleration function used in the process. 1...Substrate 2 ・ ・''=[1′111:≦(1[nW film B・
・Focused ion beam
Claims (1)
所定のエネルギに減速して基板の表面に所定パターンで
照射し、そのイオンを基板表面に直接蒸着させることを
特徴とする超電導回路の製造方法。A focused ion beam consisting of ions of superconducting thin film material,
1. A method for manufacturing a superconducting circuit, which comprises irradiating the surface of a substrate with ions at a predetermined energy deceleration in a predetermined pattern, and depositing the ions directly onto the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1002340A JP2890431B2 (en) | 1989-01-09 | 1989-01-09 | Superconducting circuit manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1002340A JP2890431B2 (en) | 1989-01-09 | 1989-01-09 | Superconducting circuit manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02181984A true JPH02181984A (en) | 1990-07-16 |
| JP2890431B2 JP2890431B2 (en) | 1999-05-17 |
Family
ID=11526570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1002340A Expired - Lifetime JP2890431B2 (en) | 1989-01-09 | 1989-01-09 | Superconducting circuit manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890431B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06158292A (en) * | 1992-11-30 | 1994-06-07 | Shimadzu Corp | Vapor deposition device using convergent ion beam |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57186342A (en) * | 1981-05-13 | 1982-11-16 | Toshiba Corp | Manufacture of semiconductor device |
| JPS60137012A (en) * | 1983-12-26 | 1985-07-20 | Ulvac Corp | Ion-beam epitaxial growth device |
| JPS6396921A (en) * | 1986-10-13 | 1988-04-27 | Nec Corp | Manufacture of semiconductor device |
-
1989
- 1989-01-09 JP JP1002340A patent/JP2890431B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57186342A (en) * | 1981-05-13 | 1982-11-16 | Toshiba Corp | Manufacture of semiconductor device |
| JPS60137012A (en) * | 1983-12-26 | 1985-07-20 | Ulvac Corp | Ion-beam epitaxial growth device |
| JPS6396921A (en) * | 1986-10-13 | 1988-04-27 | Nec Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06158292A (en) * | 1992-11-30 | 1994-06-07 | Shimadzu Corp | Vapor deposition device using convergent ion beam |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2890431B2 (en) | 1999-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4085330A (en) | Focused ion beam mask maker | |
| US4746587A (en) | Electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask | |
| EP0153854A2 (en) | Process for forming a pattern film | |
| US4608332A (en) | Electron lithography mask manufacture | |
| JPS58124230A (en) | Forming method for ultrafine pattern | |
| JPH02181984A (en) | Manufacture of superconducting circuit | |
| JPH03129349A (en) | Production of photomask | |
| JP3168593B2 (en) | Method for generating compound thin film pattern using high-intensity focused ion beam | |
| JPS6358446A (en) | Pattern forming method | |
| GB1597595A (en) | Manufacture of semiconductor elements | |
| JPS622700B2 (en) | ||
| JP2900490B2 (en) | Method for manufacturing MES field effect transistor | |
| JP3390181B2 (en) | Method for generating compound thin film pattern using high-intensity focused ion beam | |
| JPS6136928A (en) | Evacuator | |
| JPH04272640A (en) | Focused ion beam etching device | |
| GB2131608A (en) | Fabricating semiconductor circuits | |
| JPS63216257A (en) | Ion beam device | |
| JP2730269B2 (en) | Semiconductor device manufacturing equipment | |
| JPS5884429A (en) | Pattern formation | |
| JPS60157220A (en) | Electron beam exposing method | |
| JPS6075837A (en) | Mask for x-ray exposing and its production | |
| JPS60178623A (en) | Charged-beam exposure method | |
| Poole | Improvements in or relating to optical components | |
| JPH0626209B2 (en) | Etching method | |
| JPS62145816A (en) | Photoelectric image transferring apparatus |