JP3168593B2 - Method for generating compound thin film pattern using high-intensity focused ion beam - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a fine compound thin film pattern on a substrate surface using a high-intensity focused ion beam.

[0002]

2. Description of the Related Art Recently, a high-intensity focused ion beam apparatus using a liquid metal ion source has been regarded as important with miniaturization and high-density devices. In addition, ion implantation utilizing the kinetic energy of a high-speed ion beam and etching utilizing a sputtering effect can be formed without a mask. However, with such a high-speed ion beam, not only a physical sputtering effect but also a chemical effect induced by the ion beam can be sufficiently expected, and various utilization methods have been studied.

[0003]

SUMMARY OF THE INVENTION The present invention has been developed by focusing on the chemical effect induced by the irradiation of a high-intensity focused ion beam, and is developed by the irradiation of a high-intensity focused ion beam. By adjusting the kinetic energy of the ion beam to reach the target to a predetermined level, it is intended to form a fine thin film compound pattern using chemical bonding with an atmospheric gas.

[0004]

Therefore, according to the method of the present invention which has been made based on such an idea, a thin film pattern is formed by irradiating the substrate surface while deflecting and decelerating the high-speed ion beam emitted from the ion source. In this case, the ion beam irradiating the substrate surface is used as one of the ionic elements constituting the compound pattern to be generated, and the deceleration electrode is provided in the vicinity of the substrate surface where the ion beam is irradiated, and the compound pattern to be generated is formed. After the ion beam is focused, the kinetic energy of the ion beam reaching the substrate surface is adjusted to the extent that both ion elements are chemically bonded by maintaining the gas atmosphere of the other constituent element and focusing the ion beam. It is characterized by being adjusted and held at the level.

[0005]

According to the method of the present invention, when an ion beam emitted at a high speed from an ion source is deflected, decelerated and irradiated onto a substrate surface for vapor deposition, the vicinity of the target of the ion beam is chemically and ionically ionized. The kinetic energy of the ion beam reaching the substrate surface is adjusted to the level required for compound generation, and the kinetic energy of the ion beam when reaching the substrate surface is adjusted and held. As a result of the chemical bonding between the beam and the gas near the target, a fine thin film compound pattern corresponding to the ion beam diameter is formed on the substrate surface by chemically bonding the ion element and the gas.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a block diagram showing the configuration of a high-intensity focused ion beam apparatus A used in carrying out the method of the present invention. This focused ion beam apparatus is provided with a deceleration for adjusting the kinetic energy of an ion beam. It has control means.

The basic structure will be described. A liquid metal ion source 11, an extraction electrode 12, electrostatic lenses 13a and 13b, and a mass filter for selecting the type of ions to be emitted as a beam by mass in a chamber (not shown). 1
4, a deflection electrode 15 for deflecting the ion beam B to draw an arbitrary pattern on the substrate 1, a deceleration electrode 16 for decelerating the ion beam B, a sample stage 17, and the like are provided, and acceleration energy is given to the ion beam. Acceleration power supply 18, liquid metal ion source 11, and extraction electrode 1
An extraction power supply 19 for giving a potential difference between the two and a deceleration power supply 20 for giving a deceleration voltage of the ion beam B are provided. The deceleration power supply 20 and the sample stage 17 are housed in a chamber 21 into which gas is introduced. Chamber 2
A gas is supplied from a gas supply source (not shown) by a flow controller 22 to the inside of the apparatus 1. These are placed in a vacuum.

According to such a configuration, the ion beam B emitted from the liquid metal ion source 11 is focused by the electrostatic type lenses 13a and 13b, and only the desired ions are selected by the mass filter 14 to sample the ion beam B. If a predetermined deflection voltage is applied to the deflection electrode 15 before reaching the stage 17, an arbitrary pattern can be drawn on the surface of the substrate 1. At this time, the kinetic energy is reduced by the acceleration power supply 18 and the deceleration power supply 2
Since the adjustment can be made in accordance with the voltage difference from zero, by adjusting the output of the deceleration power supply 20, the arrival energy of the ion beam B can be continuously changed in principle from 0 to the output of the acceleration power supply. Therefore, if the arrival kinetic energy of the ion beam is adjusted, the substrate 1 can be used as an ion beam.
A fine thin film pattern can be formed into an arbitrary shape by chemically bonding the type of ion element irradiated to the target and a gas placed near the target.

According to the method of the present invention, for example,
If Si ions are selected as the ion beam B irradiated on the surface of the substrate 1 mounted on the sample stage 17 and N2 is selected as a gas to be supplied into the chamber 21, the substrate is mounted on the sample stage 17 in the chamber 21. The Si ions irradiated onto the surface of the substrate 1 are chemically bonded to N2 to form a thin film pattern of SiN. If O2 is selected as a gas, a thin film pattern of SiO or SiO2 can be formed.

[0010]

According to the present invention, the ion beam and the type of gas held in the vicinity of the target are selected using the high-intensity focused ion beam apparatus , and the ion beam is focused.
After that, by controlling the kinetic energy of the ion beam reaching the target to reach the substrate surface,
Fine patterns of thin film compounds can be continuously generated.

[Brief description of the drawings]

FIG. 1 is a diagram showing the internal configuration of a high-intensity focused ion beam device with a deceleration function used to carry out the method of the present invention.

[Explanation of symbols]

 A: High-intensity focused ion beam device 1: Substrate 11: Ion source B: Ion beam

Claims (1)

(57) [Claims] 1. A method for irradiating a substrate surface while deflecting and decelerating a high-speed ion beam emitted from an ion source to form a thin film pattern, wherein the ion beam irradiating the substrate surface is to be generated. A deceleration electrode is provided in the vicinity of the surface of the substrate where the ion beam is to be irradiated with the ion beam constituting one of the compound patterns, and a gas atmosphere comprising the other element constituting the compound pattern to be generated is maintained. A high-brightness focused ion beam characterized by adjusting the output of a deceleration electrode after focusing the beam so that the kinetic energy of the ion beam reaching the substrate surface is adjusted to a level at which both ion elements are chemically bonded. A method for forming a thin film pattern of a compound using the method.