JP2874591B2 - Semiconductor device manufacturing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus and, more particularly, to a semiconductor substrate (hereinafter simply referred to as a substrate).
The present invention relates to a technique for growing and forming a semiconductor crystal thereon.

[0002]

2. Description of the Related Art Conventionally, there are various methods for growing and forming a semiconductor crystal on a substrate.
The D (chemical vapor deposition) method is widely used. According to this CVD method, a semiconductor crystal can be formed on the entire substrate. However, if there is a demand for lowering the growth temperature or partially forming a crystal pattern, the following ion vapor deposition method is used.

[0003] This is achieved by ionizing a crystal material, accelerating it, and irradiating it with deceleration near the surface of the substrate.
A crystal film is formed by depositing crystal ions on the surface of a substrate, and an ion deposition apparatus as shown in the simplified diagram of FIG. 2 is used.

In FIG. 1, reference numeral 1 denotes a vacuum chamber, and 2 denotes an ion source for ionizing a crystal material (for example, silicon). A gas containing silicon is introduced, and the gas is turned into plasma in a high-frequency electric field. Is generated. The ions generated by the ion source 2 are extracted by the extraction electrode 3 and become an ion beam B.
It passes through the mass separator 4. This mass separator 4 is a kind of electromagnet, and guides only required ions into the beam path and deflects other ions out of the beam path. The required ions that have passed through the mass separator 4 are guided into the growth chamber 6, the irradiation destination is adjusted by the deflection electrode 5, the ion is decelerated by the deceleration electrode 7, and is vapor-deposited on the surface of the substrate m to grow a crystal.

[0005]

However, when a semiconductor crystal is formed using the above-described ion beam evaporation apparatus, there are the following problems.

The ion extraction port of the ion source 2 of the conventional apparatus has a certain size and is not equipped with an electron lens for focusing the ion beam B. B had a relatively wide beam. Therefore, it was very difficult to form a fine crystal pattern (for example, a crystal pattern of several μm) on the substrate m.

Further, since the ion beam B is wide and diverges, the ion current density becomes relatively small, and the growth rate of crystal ions deposited on the surface of the substrate m is slowed down. For this reason, it is susceptible to the residual gas in the growth chamber 6, and the film quality is deteriorated.

The present invention has been made in view of such circumstances, and a semiconductor capable of forming a fine crystal pattern and improving the growth rate of crystal ions by forming a fine ion beam. An object is to provide an element manufacturing apparatus.

[0009]

The present invention has the following arrangement to achieve the above object.

That is, according to the present invention, there is provided a semiconductor device manufacturing apparatus comprising: a liquid metal ion source using a semiconductor crystal material as a raw material;
An electron lens that focuses ions emitted from the liquid metal ion source to form a minute focused ion beam; an acceleration unit that accelerates the focused ion beam toward a semiconductor substrate to be processed; Deflection means for deflecting the irradiation destination of the ion beam on the semiconductor substrate,
A deceleration means for decelerating the focused ion beam to an energy of 100 eV to 200 eV to grow a semiconductor crystal pattern on the semiconductor substrate.

[0011]

According to the present invention, the ion source ionizes the semiconductor crystal material and emits the ions. The emitted ions are focused by an electron lens, and become a minute focused ion beam. The focused ion beam is accelerated toward the semiconductor substrate by the acceleration means, and the deflection means deflects the irradiation destination of the focused ion beam in accordance with a required circuit pattern. The accelerated and steered focused ion beam
The speed is reduced to a predetermined energy by the speed reduction means, and a fine crystal pattern grows on the semiconductor substrate.

[0012]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view schematically showing the configuration of an embodiment of a semiconductor device manufacturing apparatus according to the present invention.

This semiconductor device manufacturing apparatus is an apparatus for forming a semiconductor element by growing a fine crystal pattern on the surface of a substrate m.

In FIG. 1, reference numeral 10 denotes a vacuum chamber, which is a main body casing of the apparatus.
The following components are installed inside.

Reference numeral 11 denotes a liquid metal ion source for generating ions, which is formed as a melting furnace for melting a semiconductor crystal material (for example, silicon or germanium) and liquefying it. A needle 25 is provided at a sharp tip (a lower tip in the drawing) of the ion source 11, and the molten liquid material is configured to be supplied to the tip of the needle 25. . An acceleration power supply 23 is connected to the ion source 11 as acceleration means for applying acceleration energy to ions by the potential difference. The heater for heating the ion source 11 is as follows.
Illustration is omitted. Reference numeral 12 denotes an extraction electrode for extracting ionized fine particles from the ion source 11, and an extraction power source 22 is provided between the extraction electrode 12 and the ion source 11.
Is connected. 13a is a first electron lens for focusing the ion beam B, 14 is a mass filter for selecting only desired metal ions, 13b is a second electron lens,
The first electronic lens 13a and the second electronic lens 13b correspond to the electronic lens of the present invention. Reference numeral 15 denotes a deflection electrode for deflecting the irradiation destination of the focused ion beam B. The deflection of the focused ion beam B is adjusted by a deflection voltage controller 26 connected thereto. Reference numeral 16 denotes a deceleration electrode for decelerating the acceleration energy of the ion beam B to decrease the speed thereof. A deceleration power source 24 is connected between the deceleration electrode 16 and a stage 17 on which the substrate m is mounted. The deceleration power supply 24 and the deceleration electrode 16 correspond to the deceleration means of the present invention.

The stage 17 is mounted on an XY stage 20 which is movable in the X and Y directions (left and right directions in the drawing and directions orthogonal to the drawing), and a drive motor for driving the XY stage 20 21 is provided outside the vacuum chamber 10. The stage movement control unit 27 controls the drive of the drive motor 21 to move the stage 17. A communication pipe 18 is provided below the vacuum chamber 10 (below the drawing), and a vacuum pump 19 is connected to an end of the communication pipe 18.

Next, the operation of the above-described device will be described.

First, when a semiconductor crystal material (for example, silicon or germanium) is put into the ion source 11 and the ion source 11 is heated, the crystal material is melted and liquefied and supplied to the tip of the needle 25. Is done. With the temperature of the ion source 11 kept at the melting point, the extraction source 22
A potential difference of about 7 to 8 [kV] is applied between the lead electrode 12 and the tip of the needle 25 covered with the liquid material. When the electric field applied to the surface of the liquid material reaches the intensity of the evaporation electric field of the liquid material, the emission of ionized fine particles starts.
The fine particles extracted from the ion source 11 are accelerated toward the surface of the substrate m by the potential difference of 30 to 50 [kV] supplied from the acceleration power supply 23, are focused by the first electron lens 13a, and are focused. At this stage, selection of ions by the mass filter 14 is performed.

In general, melting a plurality of crystal materials can lower the melting point in some cases rather than melting only a single crystal. May form particulates. In this case, an operation of passing only desired particles through the regular beam path and deflecting the other particles out of the beam path to select them is required. The operation is performed by the mass filter 14. The mass filter 14 is like a kind of deflection electrode, and deflects unnecessary particles outside the beam path to pass only the required particle beam through the beam path.

The focused ion beam B that has passed through the mass filter 14 is focused again by the second electron lens 13b, and is formed by the deflection electrode 15 controlled by the deflection voltage control unit 26 into a desired crystal pattern. Its orientation is adjusted.

The focused ion beam B whose direction has been adjusted is
When passing through the deceleration electrode 16, it is decelerated to a predetermined energy and reaches the surface of the substrate m. At this time, the energy of the focused ion beam B is supplied to the acceleration power source 23 and the deceleration power source 24.
Is equal to the output voltage difference between That is, the focused ion beam B is not supplied to the acceleration power source 23 until it approaches the deceleration electrode 16.
Has the acceleration energy given by
When the potential of the stage 17 is increased by the deceleration power supply 24, the focused ion beam B incident on the substrate m is decelerated accordingly. Therefore, by adjusting the output of the deceleration power supply 24, the energy of the focused ion beam B can be continuously changed in principle from 0 to the output voltage value of the acceleration power supply 23. Therefore, by adjusting the output value of the deceleration power supply 24 so that the focused ion beam B is not injected into the substrate m, the focused ion beam B is vapor-deposited on the substrate m to grow a crystal pattern. Specifically, this can be achieved by adjusting the potential difference between the deceleration electrode 16 and the stage 17 to be 100 to 200 [V]. That is, the acceleration power supply 23 and the deceleration power supply
The output voltage difference from the output 24 is 100 to 200 [V], and the energy of the focused ion beam is the output voltage difference of 100 to 200 [V].
The speed will be reduced to 200 [V].

In the above description, when the desired crystal pattern is drawn by the focused ion beam B, the irradiation destination is adjusted by the deflection electrode 15. However, when the drawing range of the crystal pattern extends over a wide range, Due to the deflection limit of the deflection electrode 15 (the beam width of the focused ion beam B increases when the degree of deflection increases, and a fine crystal pattern cannot be formed, the deflection range is limited), so that all circuit patterns are drawn. May not cut. In such a case, the control signal from the stage movement control unit 27 is
And by moving the XY stage 20,
The substrate m is moved together with the stage 17, and the substrate m is positioned within the deflection range of the deflection electrode 15.

[0024]

As is apparent from the above description, the semiconductor manufacturing apparatus according to the present invention focuses ions extracted from an ion source using a semiconductor crystal material as a raw material with an electron lens to form a minute focused ion beam. Since the crystal pattern is formed and the crystal pattern is deposited on the semiconductor substrate using the fine focused ion beam, a fine crystal pattern can be easily formed.

Further, since a minute focused ion beam is used, the growth rate of the crystal is improved and the influence of the residual gas is reduced, so that a semiconductor element having a good crystal pattern can be manufactured.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a schematic configuration of an apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a schematic configuration of a conventional device.

[Explanation of symbols]

 11 ... Ion source 13a ... First electron lens 13b ... Second electron lens 15 ... Deflection electrode 16 ... Deceleration electrode 23 ... Acceleration power supply 24 ... Deceleration power supply

────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Ueda 1 Nishinokyo Kuwabaracho, Nakagyo-ku, Kyoto Shimazu Works Sanjo Plant (56) References JP-A-63-170940 (JP, A) JP-A-60- 137012 (JP, A) JP-A-2-112140 (JP, A) JP-A-2-44715 (JP, A) JP-A-61-239538 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/203 C30B 23/08

Claims (1)

(57) [Claims] 1. A liquid metal ion source made of a semiconductor crystal material, an electron lens for forming a fine focused ion beam by focusing ions emitted from the liquid metal ion source, and receiving the focused ion beam. Accelerating means for accelerating toward the semiconductor substrate as a processing object, deflecting means for deflecting the irradiation destination of the accelerated focused ion beam on the semiconductor substrate, and decelerating the focused ion beam to an energy of 100 eV to 200 eV, A semiconductor device manufacturing apparatus comprising: a speed-reducing means for growing a semiconductor crystal pattern on the semiconductor substrate.