JPH02180063A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To align bumps by a simple method and enable the lamination of semiconductor wafers by equalizing all the relative positional relation of the facet of each semiconductor wafer with a plurality of the through holes where bumps are made. CONSTITUTION:At least 3 through holes 3 parallel to the axis 2 of a column are formed, and a facet 4 comprising a plane parallel to the axis 2 of the column is made on the flank of a columnlike semiconductor ingot 1. Besides, a plurality of sheets of semiconductor wafers 11 are made by slicing the columnlike semiconductor ingot 1 at planes crossing at right angles to the axis 2 of the column. Accordingly, the relative positional relation of the facet 4 of each semiconductor wafer 11 with the through holes 3 becomes all equal. And, the alignment of bumps 9 formed in the through holes 3 is done automatically if semiconductor wafers 11 are aligned mutually through facets 4. This makes it possible to laminate the semiconductor wafers 11 easily.

Description

[Detailed Description of the Invention] (Summary) Regarding an improvement in a method for manufacturing a semiconductor device that includes a step of stacking semiconductor wafers on which semiconductor elements are formed, the present invention relates to an improvement in a method for manufacturing a semiconductor device that includes a step of stacking semiconductor wafers on which semiconductor elements are formed. The purpose of the present invention is to provide a method for manufacturing a semiconductor device in which semiconductor wafers can be stacked by aligning humps. A facet consisting of a plane parallel to the axis of the cylinder is formed on the side surface of the cylindrical semiconductor ingot, and the cylindrical semiconductor ingot is sliced with a plane perpendicular to the axis of the cylinder to form a plurality of semiconductors. A wafer is formed, an insulating film is formed on the inner surface of the through hole of this semiconductor wafer, a conductive layer is formed inside the through hole covered with the insulating film, and a mask is formed on both end surfaces of the conductive layer. After forming semiconductor elements on the semiconductor wafer, removing the mask and forming bumps on the conductor layer, and removing the plurality of semiconductor wafers on which the bumps are formed. They are configured to be aligned and stacked via facets.

[Industrial application field]

The present invention relates to an improvement in a method for manufacturing a semiconductor device, and particularly to an improvement in a method for manufacturing a semiconductor device that includes a step of stacking semiconductor wafers on which semiconductor elements are formed.

[Conventional technology]

In recent years, as ICs have become faster and smaller, semiconductor elements are becoming more and more miniaturized, but it is thought that there will eventually come a limit to miniaturization.

Therefore, as a countermeasure to this problem, a method of stacking semiconductor elements is being considered. Lamination methods include lamination at the semiconductor element level, lamination at the semiconductor chip level, and lamination at the semiconductor wafer level, and the present invention relates to a lamination technology at the semiconductor wafer level.

Lamination at the semiconductor wafer level refers to forming bumps 9 connected to power lines, ground lines, signal lines, etc. on each of a plurality of semiconductor wafers on which elements are formed, and forming bumps 9 connected to power lines, ground lines, signal lines, etc. on each semiconductor wafer so that the corresponding bumps on each semiconductor wafer In this method, a plurality of semiconductor wafers are stacked on top of each other so that they are in contact with each other, and are pressed together to form a layer.

[Problem to be solved by the invention]

Refer to FIG. 6 By the way, in order to stack the semiconductor wafers 11 so that the corresponding bumps 9 of each semiconductor wafer 11 are in contact with each other, it is necessary to align the corresponding bumps of each semiconductor wafer 111 with each other. .

Up to now, as shown in FIG. 6, positioning has been carried out while monitoring the relative positional relationship of bumps 9 on two semiconductor wafers 11 using a monitor camera 10. Therefore, each time the semiconductor wafers 11 are stacked, alignment must be performed using a monitor camera, which increases the number of man-hours and reduces throughput.

An object of the present invention is to eliminate this drawback, and is a semiconductor device capable of stacking semiconductor wafers by aligning bumps formed on semiconductor wafers in a simple manner without using a monitor camera. [Means for Solving the Problem] The above object is to provide a cylindrical semiconductor ingot (1) with at least three through holes parallel to the axis (2) of the cylinder. (3), and the cylindrical semiconductor ingot (1
) is formed with a facet (4) consisting of a plane parallel to the axis (2) of the cylinder, and the cylindrical semiconductor ingot (1) is sliced with a plane perpendicular to the axis (2) of the cylinder. Forming a plurality of semiconductor wafers (11),
An insulating film (5) is formed on the inner surface of the through hole (3) of this semiconductor wafer (11), and a conductor layer (
7) and a mask (
8) to form a semiconductor element on the semiconductor wafer (11), remove the mask (8) and form bumps (9) on the conductor layer (7), This is achieved by stacking the plurality of semiconductor wafers (11) on which the bumps (9) are formed, aligned through the facets (4).

[Effect]

In the method for manufacturing a semiconductor device including the step of stacking semiconductor wafers according to the present invention, each semiconductor wafer 11
Since the relative positional relationships between the facets 4 formed on each semiconductor wafer 11 and the plurality of through holes 3 in which the humps 9 are formed are all the same, if alignment is performed via the facets 4 formed on each semiconductor wafer 11, Each semiconductor wafer 11
The alignment of the bumps 9 formed on the surface is automatically performed.

〔Example〕

Hereinafter, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.

Referring to FIG. 1, a cylindrical semiconductor ingot 1 manufactured using the pulling method is cut into predetermined lengths. This predetermined length is a length that can slice the number of semiconductor wafers required to form at least one laminate. At least three through holes 3 having a diameter of about 1 to 3 mm are formed in the cut cylindrical semiconductor ingot 1 in parallel with the axis 2 of the cylinder using a broaching machine or the like. This through hole 3
are formed in regions where bumps for interconnecting power lines, ground lines, signal lines, etc. formed on each semiconductor wafer are to be formed. A part of the side surface of the cylindrical semiconductor ingot 1 is cut off using a planer, etc., and the axis 2 of the cylinder is removed.
A facet 4 is formed by a plane parallel to the plane.

Referring to FIG. 2, a plurality of semiconductor wafers 11 are formed by slicing a cylindrical semiconductor ingot 1 to a desired thickness, and an insulating film 5 having a thickness of about 6,000 wafers is formed on the inner surface of the through hole 3. This insulating film 5 is generally formed in the same process as the formation of a field insulating film for element isolation. That is, a silicon nitride film 6 is formed on both sides of a semiconductor wafer 11, and is patterned and removed from a field insulating film formation region (not shown) and a region corresponding to a through hole 3, and oxidized to form a field insulating film. (not shown) and an insulating film 5 of a through hole are formed.

3, the silicon nitride film 6 is removed, a conductive layer 7 made of aluminum or the like is formed by patterning it, and a conductive layer 7 made of aluminum or the like is formed in the through hole 3 by using a sputtering method or the like. After forming a silicon nitride film again and patterning it to form a mask 8 made of a silicon nitride film with a thickness of approximately 6,000 wafers on both end faces of the conductor layer 7, a normal method is used for the semiconductor wafer 11. A desired semiconductor element is then formed.

Referring to FIG. 4, silicon nitride film 8 is removed, a resist film having an opening is formed on conductor layer 7, and plating is performed to form bumps 9.

Referring to FIG. 5, a plurality of semiconductor wafers 11 on which bumps 9 are formed are aligned via facets and then pressed together via humps 9.

〔Effect of the invention〕

In a method for manufacturing a semiconductor device that includes a step of stacking semiconductor wafers, at least three through holes and facets are formed in parallel with the axis of the cylinder before slicing a cylindrical semiconductor ingot into semiconductor wafers. Therefore, if this semiconductor ingot is sliced to form semiconductor wafers, the relative positions of the facets and through holes of each semiconductor wafer will all be the same, and if the semiconductor wafers are aligned with each other via the facets, Since the bumps formed in the through holes are automatically aligned, semiconductor wafers can be stacked extremely easily without using a monitor camera.

[Brief explanation of the drawing]

1 to 5 are process diagrams of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 6 is a diagram showing a method for aligning bumps on a semiconductor wafer according to the prior art. As explained above, the element according to the present invention is formed...
Semiconductor ingot, 2 ・ ・ 3 ・ ・ 4 ・ ・ 5 ・ ・ 6 ・ 7 ・ ・ 8 ・ ・ 9 ・ ・ 10 ・ 11 Silicon nitride film, ・Conductor layer, ・Mask, ・Bump, ・Monitor camera, ・Semiconductor wafer.

Claims (1)

[Claims] At least three through holes (3) are formed in a cylindrical semiconductor ingot (1) parallel to the axis (2) of the cylinder, and on a side surface of the cylindrical semiconductor ingot (1). , forming a facet (4) consisting of a plane parallel to the axis (2) of the cylinder, and slicing the cylindrical semiconductor ingot (1) with a plane perpendicular to the axis (2) of the cylinder to form a plurality of semiconductor wafers. (11), an insulating film (5) is formed on the inner surface of the through hole (3) of the semiconductor wafer (11), and the through hole (3) is covered with the insulating film (5).
) a conductor layer (7) is formed inside the conductor layer (7);
After forming a mask (8) on both end faces of the semiconductor wafer (11) and forming a semiconductor element on the semiconductor wafer (11), the mask (8) is
) is removed to form bumps (9) on the conductor layer (7), and the plurality of semiconductor wafers (11) on which the bumps (9) are formed are aligned via the facets (4). 1. A method for manufacturing a semiconductor device, comprising the step of stacking the layers.