JPH02174261A - Manufacture of infrared image pickup element - Google Patents
Manufacture of infrared image pickup elementInfo
- Publication number
- JPH02174261A JPH02174261A JP63327598A JP32759888A JPH02174261A JP H02174261 A JPH02174261 A JP H02174261A JP 63327598 A JP63327598 A JP 63327598A JP 32759888 A JP32759888 A JP 32759888A JP H02174261 A JPH02174261 A JP H02174261A
- Authority
- JP
- Japan
- Prior art keywords
- ccd
- window
- signal electrode
- bumps
- bandgap semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 5
- 238000003331 infrared imaging Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 abstract description 12
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、赤外線像を形成する赤外線撮像素子の製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method of manufacturing an infrared imaging element that forms an infrared image.
（従来の技術）
従来の赤外線撮像素子の例を第２図に示す。この第２図
に示す構造はＣｄＴｅ基板１０上のＰ形ＣｄＨｇＴｅ
（以下ＣＭＴと略記）エピタキシャル層１１にイオン注
入法でＮ領域１２を形成したフォトダイオードアレイと
、５ｔ−ＣＣＤ１３をＩｎバンプ１４で圧着接合したも
のである。１５はＩｎ信号電極、１６はパッシベーショ
ン用陽極硫化膜（ＣｄＳ）、そして１７はＺｎＳ表面保
護膜である。このフォトダイオードに裏面ＣｄＴｅ基板
から赤外線が入射するとＣＭＴ中に電子正孔対が発生し
、これらが信号電荷としてＰＮ接合の空乏層領域を通過
することにより、Ｉｎ信号電極とＩｎバンプを経由して
Ｓ １−ＣＯＤの電荷注入領域１８へ信号電流が送り込
まれる。１９はアース接地を表している。(Prior Art) An example of a conventional infrared imaging device is shown in FIG. The structure shown in FIG. 2 is made of P-type CdHgTe on a CdTe substrate 10.
(hereinafter abbreviated as CMT) A photodiode array in which an N region 12 is formed in an epitaxial layer 11 by ion implantation, and a 5t-CCD 13 are bonded together using In bumps 14. 15 is an In signal electrode, 16 is an anode sulfide film (CdS) for passivation, and 17 is a ZnS surface protection film. When infrared rays are incident on this photodiode from the backside CdTe substrate, electron-hole pairs are generated in the CMT, and these pass through the depletion layer region of the PN junction as signal charges, thereby passing through the In signal electrode and In bump. A signal current is sent to the charge injection region 18 of S 1 -COD. 19 represents earth grounding.
この様にして赤外線画像の映像信号が得られる。In this way, a video signal of an infrared image is obtained.
（発明が解決しようとする課題）
第２図に示した従来の赤外線固体撮像素子は、以下に述
べるような問題点がある。Ｉｎバンプは圧着接合の際、
図に示す様に先端部が広がり隣接するバンプ同士が接触
する確率が高い。これは画素間のクロストークとなり好
ましくない。(Problems to be Solved by the Invention) The conventional infrared solid-state imaging device shown in FIG. 2 has the following problems. When bonding In bumps by crimping,
As shown in the figure, there is a high probability that the tips will spread and that adjacent bumps will come into contact with each other. This results in crosstalk between pixels, which is undesirable.
本発明は上記のごとき問題を解決し、画素間のクロスト
ークが生じにくい赤外線固体撮像素子の製造方法を提供
することを目的とする。An object of the present invention is to solve the above problems and provide a method for manufacturing an infrared solid-state image sensor in which crosstalk between pixels is less likely to occur.
（課題を解決するための手段）
本発明にかかる赤外線固体撮像素子の製造方法は、赤外
線フォトダイオードアレイを形成するエピタキシャルウ
ェーハの最上部にある広禁制帯半導体薄膜を、階段状に
多重エツチングして窓を開け、その上からイオン注入と
信号電極を形成し、そしてＩｎバンプによりＳ １−Ｃ
ＯＤとの圧着接合を行う。(Means for Solving the Problems) A method for manufacturing an infrared solid-state imaging device according to the present invention involves multiple etching of a wide forbidden semiconductor thin film on the top of an epitaxial wafer forming an infrared photodiode array in a stepwise manner. A window is opened, ions are implanted from above, a signal electrode is formed, and S1-C is formed by In bumps.
Perform pressure bonding with OD.
（作 用）
ウェーハ最上層の広禁制帯半導体膜断面が、階段状にエ
ツチングされているので、Ｉｎバンプ先端部の圧着接合
時の広がりが抑制される。したがってバンプ間の接触に
よるクロストークが発生しにくい。(Function) Since the cross section of the wide forbidden band semiconductor film in the uppermost layer of the wafer is etched in a stepwise manner, the spreading of the tip of the In bump during pressure bonding is suppressed. Therefore, crosstalk due to contact between bumps is less likely to occur.
（実施例）
本発明の実施例を第１図を用いて説明する。赤外線フォ
トダイオードアレイを構成するウェーハは、ＣｄＴｅの
広禁制帯半導体基板１上にＰ形の狭禁制帯半導体ＣＭＴ
層２と広禁制帯半導体ＣｄＴｅ薄膜層３を、連続的にエ
ピタキシャル成長させたものである。まず最上部の広禁
制帯半導体ＣｄＴｅ薄膜層を、階段状に多重エツチング
して窓を開け、その大きさよりやや広くイオン注入して
Ｎ領域４を形成する。続いてＩｎ信号電極５を真空蒸着
して、５ｔ−ＣＣＤ（電荷転送素子）６への信号電流注
入口とする。一方、５ｉ−ＣＣＤの電荷注入領域７の上
にＩｎバンプ８を形成して、図に示す様にフォトダイオ
ードアレイと圧着接合する。(Example) An example of the present invention will be described with reference to FIG. The wafer constituting the infrared photodiode array is a P-type narrow bandgap semiconductor CMT on a CdTe wide bandgap semiconductor substrate 1.
The layer 2 and the wide bandgap semiconductor CdTe thin film layer 3 are epitaxially grown in succession. First, the uppermost wide forbidden band semiconductor CdTe thin film layer is multi-etched stepwise to form a window, and ions are implanted slightly wider than the window to form the N region 4. Subsequently, an In signal electrode 5 is vacuum-deposited to serve as a signal current injection port to a 5t-CCD (charge transfer device) 6. On the other hand, In bumps 8 are formed on the charge injection region 7 of the 5i-CCD and bonded to the photodiode array by pressure bonding as shown in the figure.
このような構造において、赤外線が裏面（ＣｄＴｅ基板
１側）から入射すると、赤外線はＣｄＴｅ基板を透過し
Ｐ形ＣＭＴ層２中で吸収される。ここで電子正孔対が発
生して、少数キャリアである電子がＰＮ接合領域（空乏
層領域）へ流れ込む。信号電流はＩｎ電極とＩｎバンプ
を経て、５Ｌ−ＣＯＤへ入力され画像信号が形成される
。In such a structure, when infrared rays are incident from the back surface (CdTe substrate 1 side), the infrared rays are transmitted through the CdTe substrate and absorbed in the P-type CMT layer 2. Here, electron-hole pairs are generated, and electrons, which are minority carriers, flow into the PN junction region (depletion layer region). The signal current is input to the 5L-COD via the In electrode and the In bump, and an image signal is formed.
図中、９はアース接地を表している。In the figure, 9 represents earth grounding.
本発明は、上記した実施例に限られるものではない。例
えば、広禁制帯半導体基板としてＣｄＴｅ以外にＧａＡ
ｓ％ＣｄＺｎＴｅ、ＺｎＴｅを、狭禁制帯半導体層とし
てＣＭＴ以外にＨｇＺｎ用いることが可能である。また
広禁制帯半導体薄膜３として、ＣｄＴｅ以外にＨｇ組成
比の小さいＣＭＴやＺｎＴｅを用いることができる。The present invention is not limited to the embodiments described above. For example, in addition to CdTe, GaA can be used as a wide-gap semiconductor substrate.
s%CdZnTe, ZnTe, and HgZn other than CMT can be used as the narrow bandgap semiconductor layer. Furthermore, as the wide forbidden band semiconductor thin film 3, CMT or ZnTe having a small Hg composition ratio can be used in addition to CdTe.
本発明の方法によって得られた赤外線固体撮像素子は、
Ｉｎパン１間の接触によるクロストーク発生が大幅に減
少する。The infrared solid-state imaging device obtained by the method of the present invention is
The occurrence of crosstalk due to contact between the In pans 1 is significantly reduced.
第１図は本発明の一実施例を説明するための断面構造図
を表す。第２図は、従来例を説明するための同様な図で
ある。
１ ： ＣｄＴｅ広禁制帯半導体基板、２二Ｐ形の狭禁
制帯半導体ＣＭＴ層、
３：広禁制帯半導体ＣｄＴｅ薄膜層、
４：Ｎ領域、
５：信号電極、
６ ： Ｓ １−ＣＣＤ。
７：電荷注入領域、
８：Ｉｎバンプ。
ネ
外
媒FIG. 1 shows a cross-sectional structural diagram for explaining one embodiment of the present invention. FIG. 2 is a similar diagram for explaining a conventional example. 1: CdTe wide bandgap semiconductor substrate, 22P type narrow bandgap semiconductor CMT layer, 3: wide bandgap semiconductor CdTe thin film layer, 4: N region, 5: signal electrode, 6: S1-CCD. 7: Charge injection region, 8: In bump. external medium
Claims (1)
に、赤外光を吸収する狭禁制帯半導体膜および表面を安
定化する広禁制帯半導体薄膜を連続的にエピタキシャル
成長させたウェーハを用いて、前記広禁制帯薄膜を階段
状に多重エッチングして狭禁制帯半導体膜層に窓を開け
、次にイオン注入と信号電極形成を行い、さらに導電性
バンプにより電荷転送素子の各画素電極との密着接続す
ることを特徴とする赤外線撮像素子の製造方法。A wafer is used in which a narrow bandgap semiconductor film that absorbs infrared light and a wide bandgap semiconductor thin film that stabilizes the surface are epitaxially grown on a wide bandgap semiconductor substrate that transmits infrared light in the desired wavelength range. Then, the wide bandgap thin film is multi-etched stepwise to open windows in the narrow bandgap semiconductor film layer, ions are implanted and signal electrodes are formed, and conductive bumps are formed to connect each pixel electrode of the charge transfer device. 1. A method for manufacturing an infrared imaging device, characterized in that the infrared imaging device is closely connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63327598A JPH02174261A (en) | 1988-12-27 | 1988-12-27 | Manufacture of infrared image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63327598A JPH02174261A (en) | 1988-12-27 | 1988-12-27 | Manufacture of infrared image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02174261A true JPH02174261A (en) | 1990-07-05 |
Family
ID=18200851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63327598A Pending JPH02174261A (en) | 1988-12-27 | 1988-12-27 | Manufacture of infrared image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02174261A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08322826A (en) * | 1995-05-31 | 1996-12-10 | Matsushita Electric Ind Co Ltd | X-ray radiographic system |
-
1988
- 1988-12-27 JP JP63327598A patent/JPH02174261A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08322826A (en) * | 1995-05-31 | 1996-12-10 | Matsushita Electric Ind Co Ltd | X-ray radiographic system |
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