JPH02170449A - Composite metal piece for ground connection use - Google Patents
Composite metal piece for ground connection useInfo
- Publication number
- JPH02170449A JPH02170449A JP63323262A JP32326288A JPH02170449A JP H02170449 A JPH02170449 A JP H02170449A JP 63323262 A JP63323262 A JP 63323262A JP 32326288 A JP32326288 A JP 32326288A JP H02170449 A JPH02170449 A JP H02170449A
- Authority
- JP
- Japan
- Prior art keywords
- metal piece
- paste
- composite metal
- diameter
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 title claims abstract description 42
- 239000002131 composite material Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000919 ceramic Substances 0.000 abstract description 9
- 239000004020 conductor Substances 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 6
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000005219 brazing Methods 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 5
- 229910000833 kovar Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体パッケージに関し、具体的には、セラ
ミック基板上に取付けられた半導体素子のセラミック基
板取付面からアースを取出すアース導出用複合金属片に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor package, and specifically, a composite metal for grounding from a ceramic substrate mounting surface of a semiconductor element mounted on a ceramic substrate. Regarding pieces.
［従来の技術］
従来、サーデイツプ型ＩＣパッケージは、セラミック基
板上に取付けられた半導体素子のセラミック基板取付面
からアースを取出す構造になっている０図面を参照して
説明すると、第３図に示すように、セラミック基板ｌＯ
の中央凹部に半導体素子１２を固定し、半導体素子１２
のセラミック基板取付面からアースを取るために、中央
四部の底部には予め金ペーストを塗布し、金ペーストを
焼成して導体Ｋｌ膜１４を形成しである。さらに、導体
薄［１４上に半導体素子１２とアース導出用複合金属片
１６とをろう付は加工によって固定し、アルミニウム合
金線２０．２２を半導体素子１２およびアース導出用複
合金属片１６とリードフレーム１８との間に接続しであ
る。[Prior Art] Conventionally, a deep dip type IC package has a structure in which a ground is drawn from the ceramic substrate mounting surface of a semiconductor element mounted on a ceramic substrate. As such, the ceramic substrate lO
The semiconductor element 12 is fixed in the central recess of the semiconductor element 12.
In order to ground from the mounting surface of the ceramic substrate, gold paste is applied in advance to the bottom of the four central parts, and the conductive Kl film 14 is formed by firing the gold paste. Further, the semiconductor element 12 and the composite metal piece 16 for ground lead-out are fixed on the conductor thin film 14 by brazing or processing, and the aluminum alloy wires 20 and 22 are connected to the semiconductor element 12 and the composite metal piece 16 for ground lead-out to the lead frame. 18.
近年、中央凹部の底部の導体薄膜１４用のペーストとし
て、銀ガラスペーストが使用されてきたが、銀ガラスペ
ーストを焼成して導体薄ｒｆＡ１４を形成する作業と同
時にアース導出用複合金属片１６を固定する手段が採ら
れている。In recent years, silver glass paste has been used as the paste for the conductor thin film 14 at the bottom of the central recess, but the composite metal piece 16 for ground lead-out is fixed at the same time as the silver glass paste is fired to form the conductor thin rfA 14. Measures are being taken to do so.
［発明が解決しようとする課題］
従来、アース導出用複合金属片１６は、打抜加工等によ
って成型され、比較的単純な円筒型の形状をしている。[Problems to be Solved by the Invention] Conventionally, the ground lead-out composite metal piece 16 is formed by punching or the like, and has a relatively simple cylindrical shape.
そのため、銀ガラスペースト中へ接地する際、傾斜等の
不具合が発生し易い傾向にある。従って、アース導出用
複合金属片１６のリード取付面が定位置を外れてＭＩ斜
することが多く、半導体デバイスの信頼性を著しく低下
させるという致命的な欠陥を生じるという問題があった
。Therefore, when grounding into the silver glass paste, problems such as tilting tend to occur. Therefore, the lead mounting surface of the ground lead-out composite metal piece 16 often deviates from its regular position and tilts at the MI, resulting in a fatal defect that significantly reduces the reliability of the semiconductor device.
本発明は、上記問題点を解決するため、アース導出用複
合金属片の形状について種々検討した結果、特定の形状
よりアース導出用複合金属片を銀カラスペースト中に安
定して設置することが可能であることを見出だした。In order to solve the above-mentioned problems, the present invention has been developed as a result of various studies on the shape of the composite metal piece for grounding, and it is possible to stably install the composite metal piece for earthing in silver color paste with a specific shape. It was found that
従って、本発明は、セラミック基板の銀ガラスペースト
に安定して配置でき、ペースト焼成と同時に固定が可能
なアース導出用複合金属片を提供することを目自勺とす
る。Therefore, an object of the present invention is to provide a composite metal piece for grounding that can be stably placed on a silver glass paste of a ceramic substrate and can be fixed at the same time as the paste is fired.
［課題を解決するための手段］
以上の目的を達成するために本発明のアース導出用複合
金属片は、ペースト固定部とワイヤーボンディング部と
を有し、ペースト固定部の直径又は対辺距離がワイヤー
ボンディング部の直径又は対辺距離に比べて小さく、更
にペースト固定部の先端が面取りされている。[Means for Solving the Problems] In order to achieve the above object, the composite metal piece for ground lead-out of the present invention has a paste fixing part and a wire bonding part, and the diameter or the distance across opposite sides of the paste fixing part is the same as that of the wire. It is smaller than the diameter of the bonding part or the distance across opposite sides, and the tip of the paste fixing part is chamfered.
［作用］
上記のように構成されたアース導出用複合金属片で半導
体パッケージを製作すると、ペースト導体薄膜の焼成と
同時に導体薄膜上にアース導出用複合金属片を固定する
パッケージ作業で、ダイボンディング部の直径または対
辺距離に比べてペースト固定部の直径または対辺距離を
小さくしであるから、ペースト中でのアース導出用複合
金属片の安定性が向上し、高性能で低廉なアース導出用
複合金属片ができる。[Function] When a semiconductor package is manufactured using the composite metal piece for ground lead-out configured as described above, the die bonding part is removed during the packaging process in which the composite metal piece for ground lead-out is fixed on the conductor thin film at the same time as the paste conductor thin film is fired. Since the diameter or distance across flats of the paste fixing part is smaller than the diameter or distance across flats of Pieces form.
更に、ペースト固定部の先端を面取りしたから、ペース
ト中でのアース導出用複合金属片の設置作業の作業性が
向上する。Furthermore, since the tip of the paste fixing part is chamfered, the workability of installing the composite metal piece for grounding in the paste is improved.
［実施例］
以下、本発明にかかるアース導出用複合金属片の実施例
を図面に従い説明するが、本発明はこれに限定されるも
のでない。[Example] Hereinafter, an example of the composite metal piece for grounding according to the present invention will be described with reference to the drawings, but the present invention is not limited thereto.
本実施例によるアース導出用複合金属片１６の形状を第
１図およおび第２図に示す０本実施例によるアース導出
用複合金属片１６の形状の特徴は、タイボンデインク部
１６ａの直径（Ｄｌ）に比べてペースト固定部１６ｂの
直径（Ｄ２）を小さくし、更に、ペースト固定部１６ｂ
の先端に面取り１６ｃをしたことである。The shape of the composite metal piece 16 for grounding according to this embodiment is shown in FIG. 1 and FIG. The diameter (D2) of the paste fixing part 16b is made smaller than that of the paste fixing part 16b (Dl).
The reason is that a chamfer 16c is formed on the tip of the .
アース導出用複合金属片１６の直径比に関しては、Ｄ２
／Ｄ、＝０．４〜０．７５の範囲が好ましい、この数値
は、一方には加工方法として冷間すえ込み加工（ヘッダ
加工）を適用できること、他方にはペースト中でのアー
ス導出ｍａ合金属片の安定性を得ることの関係から決定
される。Regarding the diameter ratio of the composite metal piece 16 for grounding, D2
/D, is preferably in the range of 0.4 to 0.75. This value is determined by the fact that cold swaging (header processing) can be applied as a processing method on the one hand, and the ground derivation ma ratio in the paste on the other hand. It is determined from the relationship of obtaining stability of the metal piece.
次に、アース導出用複合金属片１６の厚さＴ１は半導体
素子１２−であるシリコンチップの厚さによって決定さ
れる０通常、厚さＴ１は０．３４ｍｒｎあるいは０．５
ｍｍが一般的である。また、ペースト固定部の高さ（Ｔ
ｔ ７２ ＞は塗布される銀カラスペーストの厚さ
によって決定される。具体的には、厚さＴ’ｌ＝０．３
４ｍｍの場合は、（Ｔ −７２）＝０．２〜０．２７
ｍｍである。Next, the thickness T1 of the composite metal piece 16 for grounding is determined by the thickness of the silicon chip which is the semiconductor element 12-.Normally, the thickness T1 is 0.34 mrn or 0.5 mrn.
mm is common. Also, the height of the paste fixing part (T
t 72 > is determined by the thickness of the applied silver color paste. Specifically, the thickness T'l=0.3
In the case of 4mm, (T −72) = 0.2 to 0.27
It is mm.
アース導出用複合金属片１６のタイボンディング部１６
ａとペースト固定部部１６ｂは、被覆層を設けるベース
となるように一体に形成されており、材質は熱膨張係数
のｒｗＪ係からコバールが用いられいる。銀カラスペー
ストとのなじみを向上させるため、コバール表面に銀メ
ツキ層２４を形成させである。 また、アース導出用複
合金属片１６のダイボンデインク部１６ａには、アルミ
ニウムおよびアルミニウム合金を被覆してワイヤーボン
ド面２６を形成しである。Tie bonding part 16 of composite metal piece 16 for ground lead-out
The paste fixing portion 16b and the paste fixing portion 16b are integrally formed to form a base on which a coating layer is provided, and Kovar is used as the material due to its coefficient of thermal expansion rwJ. In order to improve compatibility with silver color paste, a silver plating layer 24 is formed on the surface of Kovar. Further, the die bond ink portion 16a of the composite metal piece 16 for grounding is coated with aluminum and aluminum alloy to form a wire bond surface 26.
また、複合金属片のペースト固定用端部を面取りしであ
るから、集合した複合金属片を１個ずつ自動的に送り出
して半導体パッケージに供給する際に、金属片を円滑に
供給することかできる。これは自動フィーダによる選別
作業の時に特に有利である。また、ペースト固定部より
タイボンディング部の横方向大きさを大きくしたから、
ダイボンド作業時にワイヤーの接触面積を大きくとるこ
とかできる。In addition, since the ends of the composite metal pieces for fixing the paste are chamfered, the metal pieces can be smoothly fed when the assembled composite metal pieces are automatically sent out one by one and supplied to the semiconductor package. . This is particularly advantageous during sorting operations using automatic feeders. Also, since the lateral size of the tie bonding part is larger than that of the paste fixing part,
It is possible to increase the contact area of the wire during die bonding work.
尚、本実施例のアース導出用複合金属片１６は第３図の
半導体パッケージに従来のアース導出用複合金属片１６
と同様に取り付けられることは言うまでもない、さらに
、本発明にかかるアース導出用複合金属片は電気接点材
料で応用されているクラツド材から加工することも可能
である。Incidentally, the composite metal piece 16 for ground lead-out of this embodiment is attached to the conventional composite metal piece 16 for ground lead-out in the semiconductor package shown in FIG.
Needless to say, the composite metal piece for ground lead-out according to the present invention can be fabricated from a cladding material that is used as an electrical contact material.
さらに、本実施例のアース導出用複合金属片１６は全体
を円筒形に形成されているが、少なくとも一部を角型に
形成することが可能であり、この場合は直径のかわりに
対辺距離で限定すれば良い。Furthermore, although the entire ground lead-out composite metal piece 16 of this embodiment is formed into a cylindrical shape, it is possible to form at least a part into a square shape, and in this case, the distance across opposite sides can be used instead of the diameter. It should be limited.
実方甑例１
直径０．５ｍｍのコバール線に冷間すえ込み加工（ヘッ
ダー加工）を施して、直径Ｄ１＝０．９１１１ｍ、直径
Ｄ ＝０．５ｍｍ、厚さＴ ｉ ＝ ０ 、３４ｍｍ
、厚さＴ２＝０．０９ｍｍに成型加工しな。Practical Koshiki Example 1 Kovar wire with a diameter of 0.5 mm is subjected to cold swaging processing (header processing), and the diameter D1 = 0.9111 m, the diameter D = 0.5 mm, and the thickness T i = 0, 34 mm.
, and molded to a thickness T2=0.09mm.
この部品にＡｇメツキを厚さ３μｍに施した後、直径Ｄ
１ ＝０．９ ｍ ｍの表面側に蒸着法にてＡ１合金
層を５μｍ厚さに形成し、アース導出用複合金属片を作
製した。After applying Ag plating to a thickness of 3 μm on this part, the diameter D
1 = 0.9 mm An A1 alloy layer with a thickness of 5 μm was formed by vapor deposition on the surface side to produce a composite metal piece for ground lead-out.
このアース導出用複合金属片を市販のパーツフィーダー
に入れ、自動的に表裏選別を実施した後、ダイボンダー
を用いて市販の銀ガラスペーストを塗布したサーデイツ
プパッケージ中へ設置した。This composite metal piece for ground lead-out was placed in a commercially available parts feeder, and after automatically sorting the front and back sides, it was placed in a solder dip package coated with a commercially available silver glass paste using a die bonder.
この時、アース導出用複合金属片の選別および配置か極
めて効率良く行えた。At this time, the selection and arrangement of the composite metal pieces for ground lead-out could be carried out extremely efficiently.
ソノ後、このパッケージを最高温度１２５℃±５℃、２
分保持の乾燥工程、および４５０℃±５℃、２，５分保
持の焼成工程に通しな、焼成後、第３図と同様な半導体
パッケージのリードフレームとこのアース導出用複合金
属片とを直径２５μｍのアルミニウム合金線でボンディ
ングした。この結果得られた半導体パッケージの性質は
良好であった。After sowing, this package was heated to a maximum temperature of 125℃±5℃, 2
After the baking process, the lead frame of a semiconductor package similar to that shown in FIG. Bonding was performed using a 25 μm aluminum alloy wire. The properties of the resulting semiconductor package were good.
［発明の効果］
本発明は、上述のように構成されているので、ペースト
導体膜の焼成作業と同時にアース導出用複合金属片を固
定するサーディッグパッケージにおいて、アース導出片
の固定安定性の向上ならびにワイヤーボンディング信頼
性の向上の効果がある。[Effects of the Invention] Since the present invention is configured as described above, the fixing stability of the earth lead-out piece is improved in a cerdig package in which the composite metal piece for earth lead-out is fixed at the same time as the baking of the paste conductor film. It also has the effect of improving wire bonding reliability.
また、ヘッダー加工の利用等製造技術面では、電気部品
等のプロセスとして確立した方法を利用でき容易である
。In terms of manufacturing technology, such as the use of header processing, it is easy to use methods established as processes for electrical components.
【図面の簡単な説明】
第１図は一本発明のアース導出用複合金属片の実施例を
示す斜視図。
第２図は、第１図のアース導出用複合金属片の縦方向断
面図。
第３図は、従来の円筒形アース導出用複合金属片を収り
付けた半導体パッケージを示す断面図。
図中、参照数字は次のものを表す。
１０・・・セラミック基板、
１２・・・半導体素子、
１４・・・導体薄膜、
１６・・・アース導出用複合金属片、
１８・・・リードフレーム、
２０．２２・・・アルミニウム合金線、２４・・・銀メ
ツキ層２４．
２６・・・ワイヤーボンド面。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing an embodiment of a composite metal piece for grounding according to the present invention. FIG. 2 is a longitudinal sectional view of the composite metal piece for ground lead-out shown in FIG. 1. FIG. 3 is a sectional view showing a semiconductor package in which a conventional cylindrical composite metal piece for grounding is housed. In the figure, reference numbers represent the following: DESCRIPTION OF SYMBOLS 10... Ceramic substrate, 12... Semiconductor element, 14... Conductor thin film, 16... Composite metal piece for ground lead-out, 18... Lead frame, 20.22... Aluminum alloy wire, 24 ...Silver plating layer 24. 26...Wire bond surface.
Claims (1)
ーボンディング部とを有するアース導出用複合金属片に
おいて、ペースト固定部の直径又は対辺距離がワイヤー
ボンディング部の直径又は対辺距離に比べて小さく、更
にペースト固定部の先端が面取りされていることを特徴
とするアース導出用複合金属片。In a composite metal piece for grounding that is used in a semiconductor package and has a paste fixing part and a wire bonding part, the diameter or the distance across opposite sides of the paste fixing part is smaller than the diameter or the distance across opposite sides of the wire bonding part, and the paste fixing part A composite metal piece for grounding, characterized by a chamfered tip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323262A JPH02170449A (en) | 1988-12-23 | 1988-12-23 | Composite metal piece for ground connection use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323262A JPH02170449A (en) | 1988-12-23 | 1988-12-23 | Composite metal piece for ground connection use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02170449A true JPH02170449A (en) | 1990-07-02 |
Family
ID=18152830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323262A Pending JPH02170449A (en) | 1988-12-23 | 1988-12-23 | Composite metal piece for ground connection use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02170449A (en) |
-
1988
- 1988-12-23 JP JP63323262A patent/JPH02170449A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3292241A (en) | Method for connecting semiconductor devices | |
| EP0537982A2 (en) | Semiconductor device having improved leads | |
| EP0935286A4 (en) | Copper circuit junction substrate and method of producing the same | |
| US4099200A (en) | Package for semiconductor beam lead devices | |
| EP0090439A2 (en) | Electrically isolated semiconductor power device | |
| US4067041A (en) | Semiconductor device package and method of making same | |
| US5550086A (en) | Ceramic chip form semiconductor diode fabrication method | |
| JPH0286184A (en) | Optoelectronic device | |
| JPH08139257A (en) | Surface mount semiconductor device | |
| JPH02170449A (en) | Composite metal piece for ground connection use | |
| US5917245A (en) | Semiconductor device with brazing mount | |
| JPH04352436A (en) | Semiconductor device | |
| GB2308736A (en) | Mounting a semiconductor element | |
| JPH0314002Y2 (en) | ||
| JPH04247645A (en) | Metal substrate mounting structure | |
| JPS5824442Y2 (en) | semiconductor equipment | |
| GB2147457A (en) | Encapsulated semiconductor device with composite conductive leads | |
| JPH083018Y2 (en) | Connected lead frame for semiconductor package | |
| JPS63168031A (en) | Semiconductor device | |
| JPH09219462A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS6292354A (en) | Hybrid ic | |
| JPS6155778B2 (en) | ||
| JPH0218581B2 (en) | ||
| JP2001156215A (en) | Ceramic package | |
| JPH05226554A (en) | Production of semiconductor device |