JPH02165686A - Optical element and optoelectronic device - Google Patents

Abstract

PURPOSE:To improve heat radiating characteristics by providing a recess or a groove in a semiconductor substrate or multiple growing layers facing a resonator. CONSTITUTION:A groove 14 is provided in the fixing surface side of a substrate 2 of a semiconductor laser element 1 so that the part of the substrate facing a resonator 12 becomes thin. The groove 14 is filled with solder 15 which fixes the semiconductor laser element 1 to a submount 24 without a gap. In this way, the substrate 2 whose thermal resistance is high can be made thin. Since the solder whose heat conductivity is more excellent than the substrate 2 penetrates into the groove 14 without the gap, the thermal resistance between the resonator 12 and a heat sink 23 becomes small, and heat radiation becomes excellent. Therefore, the temperature characteristics of the semiconductor laser device are improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical device and an optoelectronic device incorporating the optical device, and particularly to a semiconductor laser device and an optoelectronic device incorporating the semiconductor laser device.

[Conventional technology]

Light sources for optical communications or digital audio discs,
Semiconductor laser elements with various structures have been developed as light sources for information processing devices such as video disks. Semiconductor lasers (semiconductor laser elements) generate a large amount of heat when they operate. Therefore, efficient heat dissipation is also important in the structural design of a semiconductor laser device incorporating a semiconductor laser element. Further, since the semiconductor laser element is small in length, width, and height of 0.4 mm or less, it is handled by being fixed on a support called a submount in order to improve its handling. Such a semiconductor laser element is fixed to a heat sink in a package of a semiconductor laser device via a submount.

For example, "Semiconductor laser and optical integrated circuit", published by Ohmsha Co., Ltd., April 25, 1985, P450-P2S5.
shows an example of mounting an rnP (indium phosphorus) long wavelength laser. In this example, in order to improve the heat dissipation effect, a multilayer growth layer including an active layer is provided on the p side (main surface side of the substrate) on top of the substrate, and an anode is provided on the top layer of this multilayer growth layer. ) is mounted facing the heat sink to lower the thermal resistance between the active layer and the heat sink and improve heat dissipation. Note that the laser chip is fixed to the heat sink by diamond (submount) 1 (Sn), and the diamond is fixed to the heat sink by Sn. Also,
The same document states, ``In order to perform CW optical oscillation, it is necessary to reduce the thermal resistance and improve the heat dissipation effect to suppress the temperature rise.

” is stated.

On the other hand, as one of the parameters indicating temperature characteristics, the droop characteristic is known in which the laser light output value decreases over time due to the thermal resistance of the element. Improving droop characteristics is important in increasing the output power of semiconductor lasers. Regarding droop characteristics, for example, published by Mitsubishi Electric Corporation's Semiconductor Division, August 1988, "°
87 Mitsubishi Semiconductor Data Book, Optical Semiconductor Device W" 1-2
It is described on page 9.

On the other hand, published by Nikkei McGraw-Hill, “Nikkei Electronics, September 24, 11984 issue, P2S5 and P2S6
describes an example using a submount made of silicon carbide (StC). Since this submount is fixed on a copper (Cu) stem and has high thermal conductivity and electrical insulation, the semiconductor laser element fixed on the submount has its substrate side facing up, contrary to the above-mentioned literature. fixed to the submount.

[Problem to be solved by the invention]

As mentioned above, the structure for fixing the semiconductor laser element to the submount requires a substrate as thick as 80 to 100 μm (Ga
As (gallium/arsenic) substrate or InPi plate, etc.]
A structure in which it is fixed to a submount with solder (substrate side fixing structure), or a structure of several μm to more than 10 μm formed on the main surface of the board.
A structure in which the multilayer growth layer side, which has an active layer constituting a resonator in a relatively thin part, is fixed to the submount with solder (growth layer side fixed i11) is adopted.The active layer that emits laser light is Because it exists within the multilayer growth layer, the heat transfer path from the resonator to the heat sink is much longer in the substrate side fixed structure compared to the growth layer side fixed structure, and the temperature characteristics (
Droop characteristics) decrease.

On the other hand, the growth layer side fixing structure has better temperature characteristics compared to the substrate side fixing structure, but when the solder fixing the semiconductor laser element and the submount is fixed, the pressing force protrudes due to the force and bulges on the periphery. This raised solder comes into contact with the active layer portion, causing a short circuit in the pn junction and deterioration of the withstand voltage (vm).

For this reason, the substrate side fixing structure is still frequently used in terms of chip bonding workability and bonding yield.

When improving the device temperature characteristics (droop characteristics) of a semiconductor laser device with a fixed structure on the substrate side, shorten the distance from the active layer to the back surface of the substrate, which serves as the heat dissipation surface, to make it easier to dissipate the heat generated in the active layer during laser oscillation. I can think of something that should be done.

However, if the thickness of the wafer made up of the substrate is reduced during the process in order to make the substrate thinner, the wafer becomes more likely to break, resulting in lower yields and poor handling of the wafer, making it unsuitable as a mass production technology. .

An object of the present invention is to provide an optical element and a photoelectronic device with excellent heat dissipation characteristics.

The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

- [Means for Solving the Problems] A brief overview of typical inventions disclosed in this application is as follows.

That is, in the semiconductor laser device of the present invention, the semiconductor laser element is fixed by solder to a submount whose substrate side is fixed to a heat sink, and a resonator is mounted on the fixed surface side of the substrate of the semiconductor laser element. A groove is provided to thin the portion of the substrate facing the substrate, and this groove portion is filled without any gaps with solder for fixing the semiconductor laser element to the submount.

In addition, as another example, a metal having better thermal conductivity than the substrate or solder is buried in the groove to form a heat dissipation promoting body, and this heat dissipating promoting body is also soldered. It is fixed to the submount via.

[Effect]

According to the above-mentioned means, since the semiconductor laser device of the present invention has the groove formed on the fixed surface side of the substrate corresponding to the resonator of the semiconductor laser element, the substrate with high thermal resistance can be thinned, and the groove Since the solder, which has better thermal conductivity than the substrate, is filled inside the resonator without any gaps, the thermal resistance between the resonator and the heat sink is reduced, resulting in good heat dissipation (
As a result, the temperature characteristics (droop characteristics) of the semiconductor laser device are improved.

In addition, in a structure in which a heat dissipation promoter is provided by embedding a metal with good thermal conductivity in the groove, the thermal resistance at the heat dissipation promoter portion is smaller than that in the case of the solder.
The temperature characteristics of the semiconductor laser device are further improved.

〔Example〕

(First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view showing a part of a semiconductor laser device according to a first embodiment of the present invention, FIG. 2 is a perspective view showing a semiconductor laser device according to a first embodiment of the present invention, and FIGS. 3 to 5 3 is a cross-sectional view of each step of manufacturing a semiconductor laser device, and FIG. 3 is a perspective view of a wafer on which a C3P type device structure is formed and a photoresist film is formed in stripes on the surface of the substrate, and FIG. FIG. 5 is a perspective view of a wafer with grooves and electrodes provided on its surface; FIG. 5 is a perspective view of strips obtained by cutting the wafer along the lateral direction of semiconductor laser elements; FIG. 1 is a perspective view showing a semiconductor laser device of the present invention with a portion cut away; FIG.

In this example, CS P (ChanneledSu
An example in which the present invention is applied to a semiconductor laser device (optoelectronic device) incorporating a (bstrate-planar) type semiconductor laser device (optical device) will be described. The semiconductor laser element is an element that emits laser light with an oscillation wavelength of 830 nm, and is incorporated as described later to form a high-output semiconductor laser device suitable as a light source for, for example, an optical disk memory.

As shown in FIG. 2, the semiconductor laser element 1 has a striped channel (
Groove) 3 is provided. This channel 3 is the n-type G
It is formed by partially etching the main surface of the aAs substrate 2. On the main surface of the n-type GaAS substrate 2 on which the striped channel 3 is formed, n-type GaA
n-shaped rad layer consisting of IAs;4. Active layer made of GaAnAs5. A p-type rad layer 6 made of p-type CaAfLAS and an n-type cap layer 7 made of n-type GaAs are formed. These layers, ie, the multilayer growth layer 8, are formed by liquid phase epitaxial growth.

Further, in the surface layer part of the multilayer growth layer 8, that is, in the center of the n-type cap layer 7 and the p-type rad layer 6, a p-medium diffusion layer 9 (dotted) is formed by zinc diffusion for current confinement. area) is provided. Further, an anode is provided on the n-type cap 117, and an anode is provided on the n-type cap 117.
A cathode electrode 11 is provided on the surface of the shaped substrate.

The active layer 5 ii1 region facing the channel 3 constitutes a resonator 12 as shown by the two-dot chain line. Then, the anode 't8ilO and the cathode electrode 11
When a predetermined voltage is applied to the resonator 12, the laser beam 13 is emitted from the end face (emission surface) of the resonator 12.

That is, the C3P type semiconductor laser device is made of n-type GaA
By providing a channel 3 on the main surface of the s-substrate 2, more light leaks into the p-shaped rad layer 6 above the channel 3 than in other parts, and the active layer corresponding to the upper part of the channel 3 5 portion (resonator 12) has an effective refractive index higher than that of the active layer 5 portion extending on both sides thereof (so that the light confinement effect in the resonator 12 is improved,
It has a structure that generates laser oscillation.

By the way, this is one of the features of the present invention.
The surface of the GaAs base vi2 facing the resonator 12 is removed to provide striped grooves 14. Since the thickness of the NFF3 GaAs substrate 2 is approximately 95 μm, the depth d of the groove 14 is approximately 40 to 60 μm, taking into consideration mechanical strength. Further, the groove bottom width W of the groove 14 is approximately 10 μm. Note that the thickness of the semiconductor laser element l is approximately 100 μm.

Next, a method for manufacturing such a semiconductor laser device 1 will be explained. In FIG. 3, a channel 3 has already been provided on the main surface of an n-type GaAs substrate 2, and a multilayer growth layer 8 has been formed.
is formed and an anode electrode 10 is formed on the surface of the multilayer growth layer 8.
FIG. 2 is a perspective view showing a part of a rectangular wafer 15 on which is formed. Such a wafer 15 is made so that the exposed surface of the n-type GaAs substrate 2 with a thickness of about 95 pm is the upper surface, and then a conventional photolithography process is performed to form the stripe-shaped grooves 14. The technique forms a mask 16 with photoresist. The distance a between the masks 16 and the adjacent masks 16 is about 100-150 μm, and the channel 3 is located in the center between the masks 16.

Then, using the mask 16 as a mask, sulfuric acid-based etchant (for example, H, So,: H, O□: Cm H
z(OH)*) to form an n-type GaAs substrate 2 with
Remove to a depth of m. As a result, as shown in FIG. 4, striped grooves 14 are formed with a depth of 40 to 60 μm and a groove bottom width of about 10 II m. Then, the n-type Ga
A u G e Ni / Cr on the surface of the As5 plate 2
/ A cathode electrode 1 with a thickness of about lum
form 1.

Next, the wafer 15 is cut into strips 17 such that the semiconductor laser elements are arranged laterally and the width corresponds to the resonator length to form strips 17 as shown in FIG. Thereafter, this strip 17 is cut into a predetermined length to obtain a semiconductor laser device I as shown in FIG.

Such a semiconductor laser element 1 is assembled into a package as shown in FIG. 6, for example, to form a semiconductor laser device. This semiconductor laser device 20 includes a plate-shaped stem 21 and a cap 22 hermetically fixed to the main surface of the stem 21, each of which is the main component of the assembly.

The stem 21 is a circular metal plate with a thickness of several mm, and a heat sink 23 made of copper is fixed to the center of its main surface (upper surface) with a brazing material or the like.

A semiconductor laser element l is fixed to the side surface of this heat sink 23 via a submount 24.

FIG. 1 is an enlarged view showing the fixed state of the semiconductor laser element 1. The semiconductor laser element l has a width of, for example, 40 mm.
The laser beam 13 is emitted from both ends of the resonator 12.0IIm, the length is 300 am, and the height is 100 μm. The semiconductor laser element 1 has an n-type GaAs substrate 2.
is fixed to the submount 24 by a solder 25 made of lead (pb)-tin (Sn). In addition, the submount 24 (support body) is also made of the same solder 2 although the composition is different.
6 is fixed to the heat sink 23.

The solder 25 is made of n-type GaA of the semiconductor laser device 1.
It is embedded in the groove 14 of the s-substrate 2 without any gaps. As a result, the heat generated in the resonator 12 is transferred to the bottom of the groove 14.
Since the light propagates vertically through the 2 portions of the n-type GaAs substrate, which is as thin as 5 μm, it reaches the solder 25 in a short time. Also, solder 25
The thermal conductivity of the n-type GaAs substrate 2 is 0.55 W/ (cm-d eg), and the thermal conductivity of the n-type GaAs substrate 2 is 0.47 W/ (cm-d eg).
cm -deg), so the thermal resistance is small. Therefore, the speed of heat transmitted through the solder 25 portion filled in the groove 14 is faster than that of the conventional structure in which it passes through a GaAs substrate, and has good thermal conductivity. The heat is transmitted to the submount 24 [thermal conductivity 1.68W/(cm-deg)]. Therefore, in this semiconductor laser device 20, when the semiconductor laser element 1 oscillates, the resonator 1 of the active layer 5
The heat generated in the two parts passes through the substrate part made thin by the groove 14 provided in the n-type GaAs substrate 2, and is quickly dissipated to the heat sink 23 via the submount 24, resulting in improved droop characteristics. .

On the other hand, the main surface of the stem 21 receives the laser beam 13 emitted from the lower end of the semiconductor laser element 1.
A light receiving element 27 for monitoring the light output of No. 3 is fixed. This light receiving element 27 is fixed to an inclined surface 28 provided on the main surface of the stem 21 via a bonding material (not shown). This prevents the reflected light from the light receiving surface of the light receiving element 27 of the laser light 13 emitted from the semiconductor laser element 1 from entering the window of the cap, thereby preventing disturbance of the far field image. It is.

On the other hand, three leads 29 are fixed to the stem 21. One lead 29 is electrically and mechanically fixed to the back surface of the stem 21, and the other two leads 29 pass through the stem 21 and are electrically connected to the stem 21 through an insulator 30 such as glass. is insulated and fixed. The upper ends of the two beam parts 29 protruding from the main surface of the stem 21 are connected to respective electrodes of the semiconductor laser element 1 and the light receiving element 27 via wires 31, respectively.

Further, a metal cap 22 having a window 32 is hermetically fixed to the main surface of the stem 21 to seal the semiconductor laser element 1 and the heat sink 23. The window 32
is formed by airtightly closing a circular hole provided in the ceiling of the cap 22 with a transparent glass plate 33. Therefore, the laser beam 13 emitted from the upper end of the semiconductor laser element 1 passes through the transparent glass plate 33 and is emitted outside the package formed by the stem 21 and the cap 22.

Note that a pair of V-shaped notches 34 and a rectangular notch 3 are provided on the outer peripheral portion of the stem 21 to face each other.
5 is provided and is used for positioning during assembly, etc.

Such a semiconductor laser device 20 includes a semiconductor laser element 1
nJltGa located in the fixed part of and facing the resonator 12
Since the As substrate 2 is formed thin and a solder 25 having better thermal conductivity than the n1GaAsl temporary 2 is embedded in the resonator 12 portion, the heat generated in the resonator 12 is quickly transferred to the heat sink 23. Since the heat is transferred to and dissipated, droop characteristics are improved.

(Second Embodiment) FIGS. 7 and 8 are diagrams showing a second embodiment of the present invention. FIG. 7 is a perspective view showing the semiconductor laser device 1, and FIG. 8 is a perspective view showing a part of the semiconductor laser device 20.

The semiconductor laser device 1 of this embodiment is the same as the semiconductor laser device 1 of the first embodiment, but the groove 14 has a thermal conductivity of 2. 51W/ (cm-d e g) and aAs and P
It is filled with a metal made of Au-5n, which is better than b5n solder. This embedded heat dissipation promoter 4
The main surface 41 of the laser diode 0 is flush with the flat surface of the cathode itt, and its end surface 42 is flush with the end surface of the semiconductor laser element 1. The heat dissipation promoter 40
The filling is performed by selective vapor deposition or the like, and the groove 1
4 is embedded flatly.

As shown in FIG. 8, such a semiconductor laser element is fixed by a solder 25 to a submount 24 (support) fixed to a heat sink 23 of a semiconductor laser device 20 via a solder 26. The semiconductor laser element l has a structure in which the main surface 41 side of the heat dissipation promoter 40 is fixed to the submount 24. Therefore, when the semiconductor laser device 1 operates, the heat generated in the resonator 12 is transmitted through the etched and thinned n-type GaAs substrate 2 portion within a short time, as in the first embodiment. It passes through an n-type GaAs substrate 2. In addition, the n-type GaAs substrate 2
The heat that has passed through passes through the heat dissipation promoter 40, which has better thermal conductivity than the solder 25, and reaches the submount 24 in a short time. The heat that reaches the submount 24 is transferred to the heat sink 2
3 and is dissipated.

As a result, the semiconductor laser device of the second embodiment has better heat conduction for heat radiation than the first embodiment, so that the temperature characteristics are further improved.

(Third Embodiment) FIG. 9 is a front view of a semiconductor laser device according to a third embodiment of the present invention.

In this embodiment, the present invention is applied to an internal confinement type semiconductor laser device 1. The internal confinement type semiconductor laser device 1 has a structure as shown in FIG. That is, this semiconductor laser device 1 has a pair of internal confinement layers 52 made of n-type GaAs on the main surface of a p-type GaAs substrate 50 with a striped channel 51 in between.

Furthermore, a multilayer growth layer 53 is provided on the main surface of this p*GaAs substrate 50. This multilayer growth layer 53 is formed by epitaxial growth into a p-type rad layer 54 made of p-type GaAJLAsN. Active layer 55 made of GaAs. n-shaped rad layer 56 consisting of n@GaAlAs eyebrows
．． It is formed by sequentially stacking an n-type cap layer 57 made of n-type GaAs1i. In addition, the p
An anode electrode 10 is provided on the back surface of the GaAs substrate 50, and a cathode electrode 8i11 is provided on the n-type cap layer 57.

This internal confinement type semiconductor laser element l is, for example, on a p-type GaAs base vi, 50 with a thickness of several 1100 tI.
After forming an n-type block layer (internal confinement layer) 52 with a thickness of 0.8 μm, a channel 51 is formed, and then a p-type rad layer 54 with a thickness of 0.15 to 0.45 μm is formed by liquid phase epitaxial growth. Active layer 55 with a thickness of 0°1 μm or less. Thickness 1
．． 5-2.5 μm n-shaped rad layer 56. Thickness 10~2
An n-type cap layer 57 with a thickness of about 0 am is formed, and the p-type cap layer 57 is
The back surface of the shaped GaAs substrate 50 is etched to form the entire surface 11.
The thickness of the p-type GaAs substrate 5 is approximately 00p.
0, an anode electrode 8ilo on the surface of the n-type cap layer 57
It is manufactured by forming a cathode electrode 11 on the surface of. This semiconductor laser device 1 includes an n-type cap layer 5
Since the cap layer 7 is formed thick, the n-type cap layer 57 is fixed to a support such as a submount via solder when the semiconductor laser element l is mounted.

Therefore, in this embodiment, a heat dissipation promoter 58 is provided on the multilayer growth 1153 side, which is the fixed surface side during mounting. That is, when manufacturing this internally constricted semiconductor laser device l,
The p-type rad layer 54 is formed on the main surface of the p-type GaAs substrate 50. Active layer 55. N-shaped rad 1156. After forming the multilayer growth layer 53 as the n-type cap layer 57, the n-type cap N57 is dug down by etching corresponding to the channel 51 to form a groove 59. This groove 59 is formed to be wider than the channel 51. Further, after forming the cathode electrode 11 on the surface of the n-type cap layer 57 including the groove 59, the recessed groove 58 is formed with a thermal conductivity of, for example, 2.51 W/(cm - de g
) and a high metal (Au-3n) are buried so that the hollow is flat.This filling is performed by selective vapor deposition, etc.The existence of the heat dissipation promoter 58 formed by filling in this way makes the semiconductor laser element 1 as a multilayer growth layer 530
1 is fixed to a support such as a submount with solder, as in the second embodiment, the heat generated in the resonator of the active layer 55 corresponding to the channel 51 is transferred to the groove. The heat is transmitted to the submount through the thin p-type GaAS substrate 50 at the bottom of 59 and the heat dissipation promoter 58 with good thermal conductivity, so the thermal resistance becomes small and the thermal characteristics are good. Note that the heat dissipation promoter 58 has a thermal conductivity of 1. 48W
/ (cm・deg), and the thermal conductivity is 2.95.
Au with a thermal conductivity of W/(cm-deg) of 4.24
Even if it is made of Ag or the like having W/(cm-d e g), the same effect as in the above embodiment can be obtained.

(Fourth Embodiment) FIG. 10 is a perspective view showing a semiconductor laser device according to a fourth embodiment of the present invention.

In the semiconductor laser device 1 of this example, n-type Ga
Instead of a groove provided on the As substrate 2 side, a groove with a depth of 40 to 60μ
The depression 60 has a rectangular shape of about m. In this structure, when the semiconductor laser element l is fixed to a support such as a submount with solder, the solder having better thermal conductivity than the n-type GaAs substrate enters the recess 60, so that the resonator 12
The heat generated in the thin n-type GaAs substrate 2. Since it passes through solder with good thermal conductivity to the submount and further to the heat sink, the thermal characteristics are good. In addition, the depression 6
The portion of the n-type GaAs substrate 2 between the rib 6 and the recess 60 is
1, and an effect that the mechanical strength does not decrease so much can be obtained compared to a semiconductor laser element made of a rectangular body.

Note that in the semiconductor laser device 1 having this structure as well, if a metal with high thermal conductivity is embedded in the recess 60, the second
Similar to the embodiment and the third embodiment, the thermal characteristics can be further improved.

According to the first to fourth embodiments, the following effects can be obtained.

(1) In the semiconductor laser device of the present invention, grooves and depressions are formed on the surface of the GaAs substrate, which is the fixed surface during mounting, to correspond to the resonator, so that the thickness of the substrate portion with high thermal resistance is reduced. Since it is thinner, the heat generated in the resonator can pass through the substrate in a short time.

(2) According to (1) above, when the semiconductor laser element of the present invention is fixed to the submount on the substrate side, the fixing solder enters the grooves and grooves provided on the substrate. The heat generated in the resonator has a relatively good thermal conductivity, so the heat generated in the resonator is quickly dissipated by passing through the thin substrate and, after passing through the substrate, through the solder, which has good thermal conductivity. Therefore, the temperature characteristics of a semiconductor laser device incorporating this semiconductor laser element can be improved.

(3) According to the above (2), a semiconductor laser device incorporating the semiconductor laser element of the present invention has good heat dissipation performance, and thus has the effect of being an excellent high-power semiconductor laser device.

(4) In the semiconductor laser device of the present invention, in a structure in which a recess is partially provided in the surface of the GaAs substrate, which is a fixed surface during mounting, in correspondence with the resonator, the thermal characteristics can be improved as described above. In addition, the periphery of the depression becomes a lip, and the mechanical strength of the element structure is less likely to decrease.

(5) In the semiconductor laser device of the present invention, grooves and depressions are formed on the surface of the GaAs substrate, which is a fixed surface during mounting, in correspondence with the resonators, and the heat conductivity of the grooves and grooves is low. Since a good metal is embedded to form a heat dissipation promoter, in a semiconductor laser device incorporating this semiconductor laser element, the heat generated in the resonator must pass through a thin substrate, By passing through the heat dissipation promoter having good thermal conductivity, the heat sink quickly reaches the heat sink, and as a result, the temperature characteristics (droop characteristics) of the semiconductor laser device are further improved.

(6) According to the above (1) to (5), according to the present invention, the thermal resistance of the semiconductor laser element is reduced, so that the temperature characteristics of the semiconductor laser device incorporating this semiconductor laser element are improved. A synergistic effect that the life of the semiconductor laser device F (semiconductor laser element) becomes longer can be obtained.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. For example, even if the material buried in the recess or groove is a material other than metal, the same effects as in the above embodiment can be obtained as long as the material has good thermal conductivity.

The above explanation has mainly focused on the case where the invention made by the present inventor is applied to the manufacturing technology of high-output semiconductor laser elements and high-output semiconductor laser devices for optical disk memories, which is the background field of application. It is not limited thereto, and includes, for example, a semiconductor laser device with another structure, an optical element such as a light-emitting diode, a light-receiving device, a single semiconductor laser device, a light-emitting diode device, a photoelectronic device with other structure such as an optical IC other than the light-receiving device, etc. The same applies to devices.

The present invention is applicable to at least optical devices such as semiconductor laser devices that generate heat, and optoelectronic devices incorporating such optical devices.

〔Effect of the invention〕

According to the present invention, the semiconductor laser element incorporated in the semiconductor laser device has the GaAs substrate side fixed to the heat sink via the submount with solder, and the region of the semiconductor laser element facing the resonator on the substrate side Because the is provided with grooves, the heat generated in the resonator passes through the thin substrate, and G
Exit through the aAs substrate area. Furthermore, since the solder embedded in the groove has better thermal conductivity than the GaAs substrate, the thermal resistance from the resonator to the submount is smaller than in the past. As a result, the semiconductor laser device not only has stable characteristics due to improved temperature characteristics, but also becomes capable of higher output.

In particular, in a structure in which a metal with good thermal conductivity is embedded in the groove of a GaAs substrate, the thermal resistance is further reduced, and further improvement in temperature characteristics can be achieved.

[Brief explanation of the drawing]

1 is a perspective view showing a part of a semiconductor laser device according to a first embodiment of the present invention, FIG. 2 is a perspective view showing a semiconductor laser device according to a first embodiment of the present invention, and FIG. 3 is a perspective view showing a semiconductor laser device according to a first embodiment of the present invention. A perspective view showing a wafer on which an element structure is formed during device manufacturing and a photoresist film is provided in stripes on the substrate surface. FIG. 4 is a perspective view of a wafer on which grooves and electrodes are also provided on the substrate surface. 5 is a perspective view showing a strip obtained by cutting a wafer in the lateral direction of a semiconductor laser device, and FIG. 6 is a perspective view showing a semiconductor laser device with a portion cut away. 7 is a perspective view showing a semiconductor laser device according to a second embodiment of the present invention, FIG. 8 is a perspective view showing a part of a semiconductor laser device according to a second embodiment of the present invention, and FIG. 9 is a perspective view showing a semiconductor laser device according to a second embodiment of the present invention. FIG. 10 is a front view of a semiconductor laser device according to a third embodiment, and FIG. 10 is a perspective view showing a semiconductor laser device according to a fourth embodiment of the present invention. I... Semiconductor laser element, 2... N-type GaAs substrate, 3... Channel, 4... N-type rad layer, 5...
・Active layer, 6...p-type cladding layer, 7...n-type camp layer, 8...multilayer growth layer, 9...p"swelling diffusion layer,
lO... Anode electrode, 11... Cathode electrode, 1
2... Resonator, 13... Laser light, 14... Groove,
DESCRIPTION OF SYMBOLS 15... Wafer, 16... Mask, 17... Strip, 20... Semiconductor laser device, 21... Stem,
22...Cap, 23...Heat sink, 24.
...Submount, 25.26...Solder, 27...
- Light receiving element, 28... Inclined surface, 29... Lead, 3
0...Insulator, 31...Wire, 32...Window, 3
3...Glass plate, 34...V-shaped notch, 35...
- Rectangular notch, 40... heat dissipation promoter, 41...
Main surface, 42... end surface, 50... p-type GaAs substrate,
51... Channel, 52... Internal constriction layer, 53...
・Multilayer growth layer, 54...p-type cladding layer, 55...
Active layer, 56... N-type rad layer, 57... N-type cap layer, 58... Heat dissipation promoter, 59... Groove, 6
0...dent, 61...rep.

Claims (1)

[Scope of Claims] 1. An optical device having at least an optical device portion consisting of a semiconductor substrate and a multilayer growth layer having an active layer forming a resonator formed on the main surface of the semiconductor substrate, the optical device having at least An optical device characterized in that a depression or a groove is provided on the surface of the semiconductor substrate or the multilayer growth layer facing the resonator. 2. An optical element having at least an optical element part consisting of a semiconductor substrate and a multilayer growth layer having an active layer forming a resonator formed on the main surface of the semiconductor substrate, the optical element facing at least the resonator. 1. An optical element characterized in that a depression or groove is provided on the surface of a semiconductor substrate or a multilayer growth layer, and a heat dissipation promoter having high thermal conductivity is embedded in the depression or groove. 3. An optoelectronic device comprising a support and an optical element fixed to the support by a bonding material, wherein a depression or groove is provided on the surface of the optical element to be bonded to the support, and the depression or A photoelectronic device characterized in that the groove is filled with a bonding material. 4. An optoelectronic device having a support and an optical element fixed to the support by a bonding material, wherein a depression or groove is provided on the surface of the optical element to be bonded to the support, and the depression or A photoelectronic device characterized in that a heat dissipation promoter with high thermal conductivity is embedded in the groove.