JPH02164033A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02164033A JPH02164033A JP32125888A JP32125888A JPH02164033A JP H02164033 A JPH02164033 A JP H02164033A JP 32125888 A JP32125888 A JP 32125888A JP 32125888 A JP32125888 A JP 32125888A JP H02164033 A JPH02164033 A JP H02164033A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- aln
- etching
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000001312 dry etching Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 10
- 238000001020 plasma etching Methods 0.000 abstract description 5
- 239000012670 alkaline solution Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 3
- 238000005546 reactive sputtering Methods 0.000 abstract description 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体装置の製造方法に関し、特に、ドライエ
ツチングを用いて半導体基板、金属等を加工する方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of processing semiconductor substrates, metals, etc. using dry etching.
〔従来の技術１
第４図から第７図はＧａＡｓ基板１をドライエツチング
で加工する方法の従来例を示す各工程ごとのデバイス断
面図である。[Prior Art 1] FIGS. 4 to 7 are device cross-sectional views showing each step of a conventional method for processing a GaAs substrate 1 by dry etching.
本従来例は、まず、ＧａＡｓ基板１上に、中間層として
Ｎｉにッケル）、またはＴｉ（チタン）あるいはＷ（タ
ングステン）層２を形成し、つづいてホトレジスト３を
形成し、所定部分に紫外線を照射する（第４図）０次に
、紫外線照射された部分のホトレジスト３を除去する（
第５図）０次に、ホトレジスト３をマスクとしてＮ１（
Ｔｆ、Ｗ）層２をエツチング除去する（第６図）６次に
、Ｎｉ （Ｔｉ、Ｗ）層２をマスクとして、リアクティ
ブイオンエツチング（ＲＩ Ｅ）によりＧａＡｓ基板１
をエツチング加工する（第７図）。In this conventional example, first, a Ni (nickel), Ti (titanium), or W (tungsten) layer 2 is formed as an intermediate layer on a GaAs substrate 1, then a photoresist 3 is formed, and a predetermined portion is exposed to ultraviolet rays. Irradiate (Fig. 4) Next, remove the photoresist 3 in the area irradiated with ultraviolet rays (Fig. 4).
Figure 5) Next, using the photoresist 3 as a mask, N1 (
Next, using the Ni (Ti, W) layer 2 as a mask, the GaAs substrate 1 is removed by reactive ion etching (RIE).
is etched (Figure 7).
上述した従来の半導体装置の製造方法は、Ｎｉ等から成
る中間層２のエツチング加工の際、Ｈ（１等の強酸（ウ
ェットプロセス）を用いるとホトレジスト膜のはがれが
生じることがあり、ウェットエツチング条件が限定され
てしまう。また、サイドエツチングが生じるために、寸
法制御性に問題がある。In the conventional semiconductor device manufacturing method described above, when a strong acid such as H (wet process) is used when etching the intermediate layer 2 made of Ni or the like, the photoresist film may peel off, and the wet etching conditions are not suitable. Further, side etching occurs, causing problems in dimensional controllability.
また、ドライプロセスにより中間！２の加工を行うと、
上述した従来の方法では、この中間層の加工で使用した
プロセスがＧａＡｓや絶縁膜等加工時にそのまま使用で
きず、加工のためのプロセスが限定されるという問題が
ある。Also, due to the dry process, intermediate! After processing 2,
The conventional method described above has a problem in that the process used to process this intermediate layer cannot be used as is when processing GaAs, an insulating film, etc., and the processes for processing are limited.
〔課題を解決するための手段ｊ
本発明の半導体装置の製造方法は、被加工対象上に窒化
アルミニュウム薄膜を形成し、該窒化アルミニュウム薄
膜の一部を選択的に除去し、次に、残存する前記窒化ア
ルミニュウム薄膜をマスクとして用いて、ドライエツチ
ングにより前記被加工対象をエツチング加工する。[Means for Solving the Problems j] The method for manufacturing a semiconductor device of the present invention includes forming an aluminum nitride thin film on a workpiece, selectively removing a portion of the aluminum nitride thin film, and then removing the remaining aluminum nitride thin film. Using the aluminum nitride thin film as a mask, the object to be processed is etched by dry etching.
窒化アルミニュウム（ＡＩ２Ｎ）膜の耐ドライエツチン
グ性が使用ガスによらず充分高いため、例えば、Ｓ Ｆ
ａ 、Ｓ Ｉ Ｆ ａ 、 Ｂ Ｆ ４ 、 Ｓ Ｉ
ＣＡ ａ。Since the dry etching resistance of aluminum nitride (AI2N) film is sufficiently high regardless of the gas used, for example, S F
a , S I Fa , B F 4 , S I
CA a.
Ｂ ＣＡ ａ等のガスが使用でき、これにより炭素（Ｃ
）による汚染等のドライエツチングダメージが極めて低
減され、転写精度に優れた加工ができる。さらに、Ａβ
Ｎのパターン形成は、上層ホトレジストの現像時に同時
に行なえるため、簡便かつ制御性に優れている。Gases such as B CA a can be used, which allows carbon (C
) Dry etching damage such as contamination is extremely reduced, allowing processing with excellent transfer accuracy. Furthermore, Aβ
Since the N pattern formation can be carried out simultaneously with the development of the upper layer photoresist, it is simple and has excellent controllability.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図から第３図は本発明の半導体装置の製造方法の一
実施例を示す工程断面図である。1 to 3 are process cross-sectional views showing one embodiment of the method for manufacturing a semiconductor device of the present invention.
ガリウム砒素（ＧａＡｓ）基板１上に、まず反応性スパ
ッタにより、ＩＩＮ薄膜４を成長させ、さらに、ＡβＮ
１１４加工のためのホトレジスト膜３を形成し、紫外線
照射を行なう（第１図）０次に、適当なアルカリ溶液で
現像（ホトレジスト３の除去）を行なうが、このときに
ＡβＮｌｌ１４がアルカリ溶液に易溶であるため、この
ＡρＮｆｆ１４も同時に除去できる（第２図）０次に、
ホトレジストマスク３とＡｊ２ＮＩ２Ｎ薄膜スクとして
、Ｓ ｉ ＣＡ ａガスを用いた反応性イオンエツチン
グを行ない（第３図）、ＧａＡｓ基板ｌ内に垂直な溝部
５を形成する。このとき、ＡβＮ膜は耐ドライエツチン
グ性が充分に高いため、所望寸法通りの加工が可能であ
る。First, an IIN thin film 4 is grown on a gallium arsenide (GaAs) substrate 1 by reactive sputtering, and then an AβN
114 A photoresist film 3 for processing is formed and irradiated with ultraviolet rays (Fig. 1).Next, development is performed with an appropriate alkaline solution (removal of the photoresist 3), but at this time AβNll14 is easily exposed to the alkaline solution. Since it is a solution, this AρNff14 can also be removed at the same time (Fig. 2).
Using the photoresist mask 3 and the Aj2NI2N thin film mask, reactive ion etching is performed using S i CA a gas (FIG. 3) to form a vertical groove 5 in the GaAs substrate l. At this time, since the AβN film has sufficiently high dry etching resistance, it can be processed to desired dimensions.
上述の実施例ではＧａＡｓ基板をエツチング加工する場
合について説明したが、これに限定されるものではなく
、被加工対象は、例えばＳｉＱ。In the above-described embodiment, a case where a GaAs substrate is etched has been described, but the etching process is not limited thereto, and the target to be processed is, for example, SiQ.
膜等であってもよい。It may also be a film or the like.
ＡＪ２Ｎ中間薄膜を用いてＳｉＯ２膜加工を行なうと、
ＡＪ２Ｎ膜が耐ドライエツチング性が高いため、ＣＦ４
やＣＨＦ、以外（７） Ｓ Ｆ ａ、 Ｓ ｉ Ｆ ４
゜ＢＦ２等のガスでも５ｉｎ２膜加工が可能となり、こ
れにより炭素（Ｃ）汚染等によるドライエツチングダメ
ージが著しく低減される。When processing SiO2 film using AJ2N intermediate thin film,
Since AJ2N film has high dry etching resistance, CF4
and CHF, other than (7) S Fa, S i F 4
5in2 film processing is possible even with a gas such as BF2, thereby significantly reducing dry etching damage caused by carbon (C) contamination and the like.
［発明の効果］
以上説明したように本発明は、ドライエツチング加工時
に、ＡβＮＴＩＪ膜中間層をマスクとして用いることに
より、ドライエツチングダメージが極めて少なく、転写
精度に優れ、かつ簡便かつ制御性に優れた加工方法を提
供できる効果がある。[Effects of the Invention] As explained above, the present invention uses the AβNTIJ film intermediate layer as a mask during dry etching processing, resulting in very little dry etching damage, excellent transfer precision, and excellent simplicity and controllability. This has the effect of providing a processing method.
第１図から第３図は本発明の半導体装置の製造方法の一
実施例を示す工程断面図であり、第１図はＡ４８Ｍおよ
びホトレジスト膜形成後の断面図、第２図はパターン形
成時の断面図、第３図は反応性イオンエツチングによる
ＧａＡｓ基板加工後の断面図、第４図から第７図は従来
例を示す工程断面図である。
１ ・・・Ｇ ａ Ａ ｓ基板、
３・・・ホトレジスト、
４・−Ａ Ｉ２Ｎ薄膜、
５・・・溝部。1 to 3 are process cross-sectional views showing one embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 1 is a cross-sectional view after forming an A48M and photoresist film, and FIG. 3 is a sectional view after processing a GaAs substrate by reactive ion etching, and FIGS. 4 to 7 are process sectional views showing a conventional example. 1...GaAs substrate, 3...Photoresist, 4-A I2N thin film, 5...Groove.
Claims (1)
より加工するにあたり、被加工対象上に窒化アルミニュ
ウム薄膜を形成し、該窒化アルミニュウム薄膜の一部を
選択的に除去し、次に、残存する前記窒化アルミニュウ
ム薄膜をマスクとして用いて、ドライエッチングにより
前記被加工対象をエッチング加工する半導体装置の製造
方法。1. When processing semiconductor substrates, insulators, metals, etc. by dry etching, an aluminum nitride thin film is formed on the workpiece, a part of the aluminum nitride thin film is selectively removed, and then the remaining aluminum nitride thin film is removed. A method for manufacturing a semiconductor device, in which the target is etched by dry etching using an aluminum nitride thin film as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32125888A JPH02164033A (en) | 1988-12-19 | 1988-12-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32125888A JPH02164033A (en) | 1988-12-19 | 1988-12-19 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02164033A true JPH02164033A (en) | 1990-06-25 |
Family
ID=18130569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32125888A Pending JPH02164033A (en) | 1988-12-19 | 1988-12-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02164033A (en) |
-
1988
- 1988-12-19 JP JP32125888A patent/JPH02164033A/en active Pending
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