JPH0215630A - Formation of protective film for semiconductor device - Google Patents
Formation of protective film for semiconductor deviceInfo
- Publication number
- JPH0215630A JPH0215630A JP16570588A JP16570588A JPH0215630A JP H0215630 A JPH0215630 A JP H0215630A JP 16570588 A JP16570588 A JP 16570588A JP 16570588 A JP16570588 A JP 16570588A JP H0215630 A JPH0215630 A JP H0215630A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- formation
- discharge
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 11
- 239000007789 gas Substances 0.000 abstract description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 3
- 238000010790 dilution Methods 0.000 abstract description 2
- 239000012895 dilution Substances 0.000 abstract description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の保護膜形成に関し、特に高信頼性
を有する半導体装置に必要な保護膜の形成法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the formation of a protective film for a semiconductor device, and particularly to a method for forming a protective film necessary for a highly reliable semiconductor device.
従来、アルミニウム配線等を含む半導体装置の保護膜と
して、プラズマ化学気相成長法を用いたプラズマシリコ
ン窒化膜が一般に用いられている。2. Description of the Related Art Conventionally, a plasma silicon nitride film produced by plasma chemical vapor deposition has generally been used as a protective film for semiconductor devices including aluminum wiring and the like.
プラズマシリコン窒化膜は保護膜としての機械的強度、
耐湿性、アルカリイオンバリア性を有している。Plasma silicon nitride film has mechanical strength as a protective film,
It has moisture resistance and alkaline ion barrier properties.
上述した優れた保護膜特性を有するプラズマシリコン窒
化膜を得るためには膜を緻密にする必要がある。緻密な
膜を得るためには、５０ＫＨｚ。In order to obtain a plasma silicon nitride film having the above-mentioned excellent protective film properties, it is necessary to make the film dense. 50KHz to obtain a dense film.
４００ＫＨｚなどの比較的低周波数で膜形成を行なう必
要がある。It is necessary to perform film formation at a relatively low frequency, such as 400 KHz.
しかしながら５０ＫＨｚや４００ＫＨｚの低周波数で膜
形成を行なった場合には、プラズマ中で発生したイオン
に下地表面がたたかれ、膜が緻密になる反面、下層の絶
縁膜、アルミニウム配線およびシリコン窒化膜自身がチ
ャージアップして、下層のデバイスの特性が変動すると
いう問題がある。特にＭＯＳデバイスにおいては素子分
離領域のリーク電流の発生、バイポーラデバイスではベ
ース抵抗の変動等、大きな問題となっている。However, when film formation is performed at a low frequency of 50KHz or 400KHz, the underlying surface is struck by ions generated in the plasma, making the film denser, but at the same time, the underlying insulation film, aluminum wiring, and silicon nitride film themselves are There is a problem in that the characteristics of the underlying device change due to the charge-up. Particularly in MOS devices, leakage current occurs in the element isolation region, and in bipolar devices, variations in base resistance are serious problems.
また上述の様な、緻密なプラズマシリコン窒化膜は非常
に大きな圧縮応力を有しているため、アルミニウム配線
のストレスマイグレーションの原因となっている。Furthermore, the dense plasma silicon nitride film as described above has a very large compressive stress, which causes stress migration in the aluminum wiring.
逆に１３．５６ＭＨｚの様な高周波数でプラズマシリコ
ン窒化膜を形成した場合には、イオンの発生量及びイオ
ンのエネルギーが低いために、緻密な膜が得られず、保
護膜としての特性は劣る。On the other hand, when a plasma silicon nitride film is formed at a high frequency such as 13.56 MHz, the amount of ions generated and the energy of the ions are low, so a dense film cannot be obtained and its properties as a protective film are poor. .
本発明の半導体装置の保護膜形成方法は、高い放電周波
数を用いた第１のプラズマ成膜工程と、低い放電周波数
を用いた第２のプラズマ成膜工程とを有している。The method of forming a protective film for a semiconductor device according to the present invention includes a first plasma film forming step using a high discharge frequency and a second plasma film forming step using a low discharge frequency.
この保護膜としては、ケイ素（Ｓｉ）、窒素（Ｎ）。This protective film includes silicon (Si) and nitrogen (N).
水素（Ｈ）によって形成されている絶縁膜や、ケイ素（
Ｓｉ）、窒素（Ｎ）、酸素（０）、水素（Ｈ）によって
形成されている絶縁膜、そしてケイ素（Ｓｉ）、窒素（
Ｎ）、弗素（Ｆ）、水素（Ｈ）によって形成されている
絶縁膜を用いることができる。Insulating films formed of hydrogen (H) and silicon (
An insulating film formed of silicon (Si), nitrogen (N), oxygen (0), and hydrogen (H), and an insulating film formed of silicon (Si), nitrogen (
An insulating film formed of N), fluorine (F), or hydrogen (H) can be used.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の半導体装置の保護膜形成方法の第１の
実施例（保護膜がプラズマシリコン窒化膜である）を説
明するためのものであり、保護膜の製造工程順の配線部
断面図である。FIG. 1 is for explaining a first embodiment of the method for forming a protective film for a semiconductor device according to the present invention (the protective film is a plasma silicon nitride film), and shows a cross section of a wiring part in the order of the manufacturing process of the protective film. It is a diagram.
まず、半導体素子を形成した単結晶シリコン基板１０１
上に絶縁膜１０２を形成し、更にアルミニウム配線１０
３をエツチングを用いて形成する（第１図（ａ））。First, a single crystal silicon substrate 101 on which a semiconductor element is formed
An insulating film 102 is formed thereon, and an aluminum wiring 10 is further formed on the insulating film 102.
3 is formed using etching (FIG. 1(a)).
次に第１プラズマシリコン窒化膜１０４をプラズマ気相
成長法で５００ｏ人程度形成する（第１図（ｂ））。第
１プラズマシリコン窒化膜１０４はモノシランガフ、
（Ｓ ｉ Ｈ４）を１７０ （ＳＣＣＭ） ７７モ：、
７ガス（ＮＨ３）を３００ （ＳＣＣＭ）、希釈用窒素
ガス（Ｎ２）を１７８０ （ＳＣＣＭ）を流し、全ガス
圧力を０．３５Ｔｏｒｒに設定後、周波数１３．５６Ｍ
Ｈｚで放電電力９００ｗを印加し、基板温度３００℃の
条件下で形成した。この条件下で形成したシリコン窒化
膜の屈折率は１．９８であり、バッフアート弗酸に対す
るエツチングレートは約１００人／分、組成はＥ Ｓ
ＣＡ（ＥｌｅｃｔｒｏｎＳｐｅｃｔｒｏｓｃｏｐｙ ｆ
ｏｒ Ｃｈｅｍｉｃａｌ Ａｎａｌｙｓｉｓ）を用いた
分析値でＳｉ：Ｎ＝５４：４６である。また堆積速度は
約２００人／分であった。Next, a first plasma silicon nitride film 104 of about 500 layers is formed by plasma vapor deposition (FIG. 1(b)). The first plasma silicon nitride film 104 is a monosilane guff,
(S i H4) 170 (SCCM) 77Mo:,
After flowing 7 gas (NH3) at 300 (SCCM) and diluting nitrogen gas (N2) at 1780 (SCCM) and setting the total gas pressure to 0.35 Torr, the frequency was 13.56 M.
A discharge power of 900 W was applied at Hz and a substrate temperature of 300° C. was formed. The refractive index of the silicon nitride film formed under these conditions is 1.98, the etching rate for buffered hydrofluoric acid is approximately 100 people/min, and the composition is E S
CA (Electron Spectroscopy f
Si:N=54:46 according to an analysis value using a method (or Chemical Analysis). The deposition rate was about 200 people/min.
次に第１のプラズマシリコン窒化膜１０４を形成し、放
電停止後、別電源を用いて放電周波数５０ＫＨｚ、放電
電力９００ｗを印加し、第２プラズマシリコン窒化膜１
０５を５０００人形成した（第１図（Ｃ））。第２プラ
ズマシリコン窒化膜１０５の形成のためのガス流量、圧
力、基板温度は第１プラズマシリコン窒化膜１０４の形
成時と全く同じである。この条件下で形成した第２プラ
ズマシリコン窒化膜１０５の屈折率は１．９９であり、
バッフアート弗酸に対するエツチングレートは約５０人
／分、組成はＥＳＣＡ分析値でＳｉ：Ｎ＝５４：４６で
あり、第１プラズマシリコン窒化膜１０４よりも密度が
大きく緻密な膜が形成されている。Next, a first plasma silicon nitride film 104 is formed, and after stopping the discharge, a discharge frequency of 50 KHz and a discharge power of 900 W are applied using a separate power source, and a second plasma silicon nitride film 1 is formed.
05 was formed for 5,000 people (Figure 1 (C)). The gas flow rate, pressure, and substrate temperature for forming the second plasma silicon nitride film 105 are exactly the same as those for forming the first plasma silicon nitride film 104. The refractive index of the second plasma silicon nitride film 105 formed under these conditions is 1.99.
The etching rate for buffered hydrofluoric acid is about 50 people/min, the composition is Si:N=54:46 according to ESCA analysis values, and a denser and more dense film is formed than the first plasma silicon nitride film 104. .
この時の膜堆積速度は約３５０人／分である。The film deposition rate at this time was about 350 people/min.
以上の様に保護膜を形成した半導体装置においては、絶
縁膜１０２に発生する正電荷を１０１６〜１０１７個／
Ｃ♂に抑えることができ、素子の特性変動が非常に小さ
くなる。絶縁膜１０２上に直接第２プラズマシリコン窒
化膜１０５の放電周波数で膜形成を行った場合には、絶
縁膜１０２中には１０１８〜１０１９個／ ｃｆの正電
荷が発生し、素子の特性変動が大きい。In the semiconductor device in which the protective film is formed as described above, the number of positive charges generated in the insulating film 102 is 1016 to 1017/
C♂ can be suppressed, and the variation in device characteristics becomes extremely small. When a film is formed directly on the insulating film 102 at the discharge frequency of the second plasma silicon nitride film 105, 1018 to 1019 positive charges/cf are generated in the insulating film 102, causing variations in device characteristics. big.
また第１のプラズマシリコン窒化膜１０４の膜応力は８
Ｘ １０ ”ｄｙｎ／ｃｕｔ （圧縮）で第２プラズ
マシリコン窒化膜１０５ （８Ｘ １０９ｄｙｎ／ｃＪ
（圧縮））に比べて小さいため、本発明の形成方法を
用いることにより、アルミニウム配線１０３に加わる応
力も小さくなり、ストレスマイグレーションの抑制効果
がある。The film stress of the first plasma silicon nitride film 104 is 8
The second plasma silicon nitride film 105 (8X 109 dyn/cJ
(compression)), by using the formation method of the present invention, the stress applied to the aluminum wiring 103 is also reduced, which has the effect of suppressing stress migration.
もちろん緻密な第２プラズマシリコン窒化膜１０５を最
終膜として用いているため、保護膜特性上もまったく問
題ない。Of course, since the dense second plasma silicon nitride film 105 is used as the final film, there is no problem in terms of protective film characteristics.
第２図は本発明の第２の実施例であるＭＯＳデバイス上
の保護膜製造工程順の断面図である。本実施例では保護
膜として酸素を含有したプラズマシリコン酸化膜を用い
ている。FIG. 2 is a cross-sectional view showing the steps of manufacturing a protective film on a MOS device according to a second embodiment of the present invention. In this embodiment, a plasma silicon oxide film containing oxygen is used as the protective film.
第２図（ａ）はアルミニウム配線２０５まで形成したＭ
Ｏ３構造の縦断面図である。２０１は単結晶シリコン基
板、２０２はシリコン酸化膜、２０３はゲート電極とな
る多結晶シリコン、２０４は層間絶縁膜、２０５はアル
ミニウム配線である。FIG. 2(a) shows the M formed up to the aluminum wiring 205.
FIG. 3 is a longitudinal cross-sectional view of the O3 structure. 201 is a single crystal silicon substrate, 202 is a silicon oxide film, 203 is polycrystalline silicon that becomes a gate electrode, 204 is an interlayer insulating film, and 205 is an aluminum wiring.
次に保護膜を２つの反応室を持つプラズマ気相成長装置
を用いて形成する。２つの反応室のうち第１反応室の放
電周波数は１３．５６ＭＨｚ、第２反応室の放電周波数
は３８０ＫＨｚである。Next, a protective film is formed using a plasma vapor deposition apparatus having two reaction chambers. Of the two reaction chambers, the discharge frequency of the first reaction chamber is 13.56 MHz, and the discharge frequency of the second reaction chamber is 380 KHz.
まず、第２図（ａ）の構造を有するシリコン基板上に、
放電周波数１３．５６ＭＨｚの第一反応室において第一
プラズマシリコン酸化窒化膜２０６を５０００人形成す
る（第２図（ｂ））。第１プラズマシリコン酸化窒化膜
２０６はモノシランガス（Ｓ ｉ Ｈ４）を１７０ （
ＳＣＣＭ）、アンモニアガス（Ｎ Ｈｓ ）を３００
（ＳＣＣＭ）、亜酸化窒素ガス（Ｎ２０）を２５０ （
ＳＣＣＭ）、希釈用窒素ガス（Ｎ２）を１５３０ （Ｓ
ＣＣＭ）を流し、全ガス圧力を０．３５Ｔｏｒｒに設定
後、放電周波数１３．５６ＭＨｚ、放電電力９００ｗを
印加し、基板温度３００℃の条件下で形成した。First, on a silicon substrate having the structure shown in FIG. 2(a),
A first plasma silicon oxynitride film 206 is formed by 5,000 people in a first reaction chamber with a discharge frequency of 13.56 MHz (FIG. 2(b)). The first plasma silicon oxynitride film 206 is made of monosilane gas (S i H4) at 170% (
SCCM), ammonia gas (NHs) at 300
(SCCM), nitrous oxide gas (N20) at 250 (
SCCM), nitrogen gas (N2) for dilution at 1530 (S
After setting the total gas pressure to 0.35 Torr, a discharge frequency of 13.56 MHz and a discharge power of 900 W were applied, and the substrate temperature was 300° C..
この条件下で形成したシリコン酸化窒化膜２０６の屈折
率は１．７９、バッフアート弗酸に対するエツチングレ
ートは約３００人／分、組成はＥＳＣＡ分析値でＳｉ：
Ｎ：０＝４５：３２：２３であり、その膜応力は３ Ｘ
ｌ Ｏ”ｄｙｎ／ｃｎ！ （引張）と非常に小さい。The refractive index of the silicon oxynitride film 206 formed under these conditions is 1.79, the etching rate for buffered hydrofluoric acid is about 300 people/min, and the composition is Si:
N:0=45:32:23, and the film stress is 3X
l O”dyn/cn! (tensile), which is very small.
第１反応室で第１プラズマシリコン酸化窒化膜２０６を
形成後、第２図（ｂ）の構造を有するシリコン基板をロ
ードロック室を介して第２反応室へ設置し、第２プラズ
マシリコン酸化窒化膜２０７を５０００人形成した（第
２図（Ｃ））。第２プラズマシリコン酸化窒化膜２０７
の形成は、放電周波数３８０ＫＨｚ、放電電力９００Ｗ
で行なった。After forming the first plasma silicon oxynitride film 206 in the first reaction chamber, the silicon substrate having the structure shown in FIG. The film 207 was formed by 5,000 people (FIG. 2(C)). Second plasma silicon oxynitride film 207
The formation of the discharge frequency is 380KHz and the discharge power is 900W.
I did it.
ガス流量、圧力、基板温度は第１プラズマシリコン窒化
膜形成時と全く同じである。第２プラズマシリコン酸化
窒化膜２０７の屈折率は１．８１、バッフアート弗酸に
対するエツチングレートは約２１０人、組成はＥＳＣＡ
分析値でＳｉ：Ｎ：０＝４５：３２：２３であり第１シ
リコン酸化窒化膜２０６よりも密度の大きな緻密なシリ
コン酸化窒化膜が形成されている。The gas flow rate, pressure, and substrate temperature are exactly the same as in the first plasma silicon nitride film formation. The refractive index of the second plasma silicon oxynitride film 207 is 1.81, the etching rate for buffered hydrofluoric acid is approximately 210, and the composition is ESCA.
The analysis value is Si:N:0=45:32:23, and a dense silicon oxynitride film with a higher density than the first silicon oxynitride film 206 is formed.
以上の様に保護膜を形成した半導体装置においては、ア
ルミニウム配線も大きなチャージアップなせずに、多結
晶シリコンを介したゲート酸化膜への影響も非常に小さ
く、閾値電圧Ｖ丁の変動も抑制される。In the semiconductor device in which the protective film is formed as described above, there is no large charge-up in the aluminum wiring, the influence on the gate oxide film through the polycrystalline silicon is very small, and the fluctuation of the threshold voltage V is also suppressed. Ru.
また第２の実施例では酸素を含有したシリコン酸化窒化
膜を用いているために膜応力が非常に小さく、第１の実
施例よりもストレスマイグレーションの抑制効果が大き
い。Further, in the second embodiment, since a silicon oxynitride film containing oxygen is used, the film stress is very small, and the effect of suppressing stress migration is greater than that of the first embodiment.
またこの他に弗素（Ｆ）を含有したシリコン窒化膜を２
層に用いた場合は半導体素子への水素の影響の少ない保
護膜を形成することができる。In addition to this, a silicon nitride film containing fluorine (F) was
When used as a layer, it is possible to form a protective film with less hydrogen influence on semiconductor elements.
なお以上説明した本発明の放電周波数を第１層目形成に
はＩＭＨｚ以上を第２層目形成にはＩＭＨｚ以下を用い
るのが有効である。Note that it is effective to use the above-described discharge frequency of the present invention at IMHz or more for forming the first layer and below IMHz for forming the second layer.
以上説明した様に本発明はプラズマ気相成長法を用いて
、第１の高い放電周波数によって１層目の保護絶縁膜を
形成し、続いて、第２の低い放電周波数によって２層目
の保護絶縁膜を形成することによって、下層の絶縁膜や
アルミニウム配線がチャージアップすることなく、機械
的強度、耐湿性、アルカリイオンバリア性を有した保護
膜を形成できる効果がある。As explained above, the present invention uses plasma vapor phase epitaxy to form a first protective insulating film at a first high discharge frequency, and then to form a second protective insulating film at a second low discharge frequency. By forming the insulating film, it is possible to form a protective film having mechanical strength, moisture resistance, and alkali ion barrier properties without charging up the underlying insulating film or aluminum wiring.
更に１層目に膜応力の小さな保護絶縁膜が形成されるた
め、アルミニウム配線のストレスマイグレーション抑制
効果がある。Furthermore, since a protective insulating film with low film stress is formed in the first layer, there is an effect of suppressing stress migration of the aluminum wiring.
第１図（ａ）〜（ｃ）は本発明の第１の実施例を説明す
るための主な製造工程の断面図、第２図は（ａ）〜（ｃ
）は本発明の第２の実施例を説明するための主な製造工
程の断面図である。
１０１・・・・・・シリコン基板、１０２・・・・・・
絶縁膜、１０３・・・・・・アルミニウム配線、１０４
・・・・・・第１プラズマシリコン窒化膜、１０５・・
・・・・第２のプラズマシリコン窒化膜、２０１・・・
・・・シリコン基板、２０２・・・・・・シリコン酸化
膜、２０３・・・・・・多結晶シリコン、２０４・・・
・・・層間絶縁膜、２０５・・・・・・アルミニウム配
線、２０６・・・・・・第１プラズマシリコン酸化窒化
膜、２０７・・・・・・第２プラズマシリコン酸化窒化
膜。FIGS. 1(a) to (c) are cross-sectional views of the main manufacturing steps for explaining the first embodiment of the present invention, and FIG. 2 is (a) to (c).
) is a cross-sectional view of the main manufacturing process for explaining the second embodiment of the present invention. 101...Silicon substrate, 102...
Insulating film, 103... Aluminum wiring, 104
...First plasma silicon nitride film, 105...
...Second plasma silicon nitride film, 201...
... Silicon substrate, 202 ... Silicon oxide film, 203 ... Polycrystalline silicon, 204 ...
. . . interlayer insulating film, 205 . . . aluminum wiring, 206 . . . first plasma silicon oxynitride film, 207 . . . second plasma silicon oxynitride film.
Claims (1)
縁膜を形成する工程において、該保護絶縁膜を、第１の
印加放電周波数および、続いて該第１の印加放電周波数
より低周波数の第２の印加放電周波数を用いて形成する
ことを特徴とする半導体装置の保護膜形成方法。In a step of forming a protective insulating film of a semiconductor device using high-frequency plasma vapor phase epitaxy, the protective insulating film is applied at a first applied discharge frequency and then at a second applied discharge frequency lower than the first applied discharge frequency. 1. A method for forming a protective film for a semiconductor device, the method comprising: forming a protective film using an applied discharge frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16570588A JPH0215630A (en) | 1988-07-01 | 1988-07-01 | Formation of protective film for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16570588A JPH0215630A (en) | 1988-07-01 | 1988-07-01 | Formation of protective film for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0215630A true JPH0215630A (en) | 1990-01-19 |
Family
ID=15817490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16570588A Pending JPH0215630A (en) | 1988-07-01 | 1988-07-01 | Formation of protective film for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0215630A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714408A (en) * | 1995-12-14 | 1998-02-03 | Denso Corporation | Method of forming silicon nitride with varied hydrogen concentration |
| US6316794B1 (en) | 1998-04-22 | 2001-11-13 | Fuji Electric Co., Ltd. | Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region |
| WO2007037094A1 (en) * | 2005-09-29 | 2007-04-05 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device with nitride and oxide layers |
| US8588692B2 (en) | 2005-02-02 | 2013-11-19 | Panasonic Corporation | Communication terminal and communication service decision method |
-
1988
- 1988-07-01 JP JP16570588A patent/JPH0215630A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714408A (en) * | 1995-12-14 | 1998-02-03 | Denso Corporation | Method of forming silicon nitride with varied hydrogen concentration |
| US6137156A (en) * | 1995-12-14 | 2000-10-24 | Denso Corporation | Semiconductor device employing silicon nitride layers with varied hydrogen concentration |
| US6316794B1 (en) | 1998-04-22 | 2001-11-13 | Fuji Electric Co., Ltd. | Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region |
| US6558983B2 (en) | 1998-04-22 | 2003-05-06 | Fuji Electric Co., Ltd. | Semiconductor apparatus and method for manufacturing the same |
| US8588692B2 (en) | 2005-02-02 | 2013-11-19 | Panasonic Corporation | Communication terminal and communication service decision method |
| WO2007037094A1 (en) * | 2005-09-29 | 2007-04-05 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device with nitride and oxide layers |
| JP2007123825A (en) * | 2005-09-29 | 2007-05-17 | Toshiba Corp | Method of manufacturing semiconductor device |
| US7772129B2 (en) | 2005-09-29 | 2010-08-10 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device |
| US8557717B2 (en) | 2005-09-29 | 2013-10-15 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device |
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