JPH02151088A - Compound magnetoresistance effect element - Google Patents
Compound magnetoresistance effect elementInfo
- Publication number
- JPH02151088A JPH02151088A JP63304107A JP30410788A JPH02151088A JP H02151088 A JPH02151088 A JP H02151088A JP 63304107 A JP63304107 A JP 63304107A JP 30410788 A JP30410788 A JP 30410788A JP H02151088 A JPH02151088 A JP H02151088A
- Authority
- JP
- Japan
- Prior art keywords
- film
- soft magnetic
- bias
- magnetoresistance
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 14
- 150000001875 compounds Chemical class 0.000 title 1
- 239000000696 magnetic material Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 14
- 230000001747 exhibiting effect Effects 0.000 abstract 2
- 230000007423 decrease Effects 0.000 description 7
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気ディスク、磁気テープ装置等の磁気ヘッド
の構造とその製造法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a magnetic head of a magnetic disk, magnetic tape device, etc., and its manufacturing method.
従来、磁気抵抗効果膜へのバイアス磁界印加法には多く
の方法が考案されているが１本発明に近い発明には軟磁
性体近接法（米国特許第３９４０７９７号）磁気抵抗膜
とバイアス電流線を２層にしたシャントバイアス法（特
開昭４９−７４５２２ ）がある。Conventionally, many methods have been devised for applying a bias magnetic field to a magnetoresistive film, but one invention that is close to the present invention is the soft magnetic material proximity method (US Pat. No. 3,940,797), magnetoresistive film and bias current line. There is a shunt bias method (Japanese Unexamined Patent Publication No. 74522/1983) that uses two layers.
シャントバイアス法では、第２図で示すように磁気抵抗
膜１とバイアス電流用非磁性金属膜２を一体化して用い
る。したがって、バイアス膜２へ電流が分流するため、
磁気抵抗膜１への実効電流が減少し、出力電圧が低くな
るという欠点がある。In the shunt bias method, as shown in FIG. 2, a magnetoresistive film 1 and a nonmagnetic metal film 2 for bias current are used integrally. Therefore, since the current is shunted to the bias film 2,
This has the disadvantage that the effective current to the magnetoresistive film 1 decreases and the output voltage decreases.
他方、軟磁性体近接法では、第３図で示すように、磁気
抵抗膜１に対して軟磁性膜５を絶縁膜３を介して設置す
る。この方法では磁気抵抗効果膜１の実効電流値は１０
０％であるから、シャントバイアス法に比較して出力電
圧は高いが、磁気抵抗効果膜１と軟磁性膜５の間による
絶縁膜を数１０ｎｍ以下の厚さとするため、両者間の短
絡を生ずるといった欠点があった。On the other hand, in the soft magnetic material proximity method, as shown in FIG. 3, a soft magnetic film 5 is placed on the magnetoresistive film 1 with an insulating film 3 interposed therebetween. In this method, the effective current value of the magnetoresistive film 1 is 10
0%, the output voltage is higher than that of the shunt bias method, but since the thickness of the insulating film between the magnetoresistive film 1 and the soft magnetic film 5 is several tens of nanometers or less, a short circuit occurs between the two. There were some drawbacks.
上記従来技術はシャントバイアス法では出力向上の点、
軟磁性体近接法では信頼性の点が配慮されていなかった
。The above conventional technology has the points of improving output in the shunt bias method.
Reliability was not considered in the soft magnetic material proximity method.
本発明はヘッド出力が高く、かつ高信頼度の磁気ヘッド
を提供すること目的とする。An object of the present invention is to provide a magnetic head with high head output and high reliability.
本発明は上記目的を達成するために、磁気抵抗効果膜に
磁気抵抗効果を示さない軟磁性膜を重ね合せて、シャン
トバイアス法と軟磁性体近接法とを複合化したものであ
る。In order to achieve the above object, the present invention combines a shunt bias method and a soft magnetic material proximity method by superimposing a soft magnetic film that does not exhibit a magnetoresistive effect on a magnetoresistive film.
また、本発明に於てはシャントバイアス膜を兼ねる軟磁
性金属膜への電流の分流量の調整のために、磁気抵抗効
果膜の電気抵抗率より軟磁性膜の電気抵抗率を高くした
ものである。Furthermore, in the present invention, in order to adjust the amount of current shunted to the soft magnetic metal film that also serves as the shunt bias film, the electrical resistivity of the soft magnetic film is made higher than the electrical resistivity of the magnetoresistive film. be.
さらに、素子出力の直線性の改善と出力向上のために、
差動構造としたものである。Furthermore, in order to improve the linearity of the element output and increase the output,
It has a differential structure.
本発明の複合磁気抵抗効果素子の構造は第１図で示すよ
うに、磁気抵抗膜１に対して電気的に接合された軟磁性
膜６が配置されており、軟磁性膜６が金属であれば、そ
れぞれの電気抵抗率と膜厚によって分流量が決まる。As shown in FIG. 1, the structure of the composite magnetoresistive element of the present invention includes a soft magnetic film 6 electrically connected to a magnetoresistive film 1. For example, the divided flow rate is determined by each electrical resistivity and film thickness.
磁気抵抗膜１に印加されるバイアス磁界は軟磁性膜に流
れる電流による電流バイアスおよび軟磁性膜と磁気抵抗
効果膜の磁気的結合によるバイアス磁界の和である。し
たがって、磁気的結合によるバイアス磁界分だけ電流バ
イアスは少なくてすむ。これによって、磁気抵抗効果膜
への分流量が実効的に増大するので、素子の出力も増大
する。The bias magnetic field applied to the magnetoresistive film 1 is the sum of the current bias caused by the current flowing through the soft magnetic film and the bias magnetic field caused by the magnetic coupling between the soft magnetic film and the magnetoresistive film. Therefore, the current bias can be reduced by the bias magnetic field due to magnetic coupling. This effectively increases the amount of diversion to the magnetoresistive film, thereby increasing the output of the element.
−例としてシャント膜にＴｉ（電気抵抗率６０μΩＧ）
、Ｎｂ（電気抵抗率３０μΩ■）、Ｃ。-For example, the shunt film is made of Ti (electrical resistivity 60μΩG)
, Nb (electrical resistivity 30 μΩ■), C.
Ｔ ａ −Ｚ ｒアモルファス軟磁性体（電気抵抗率３
０μΩ印）を使用した場合、磁気抵抗効果膜の電気抵抗
率が２０μΩ〔、厚さが４５ｎｍであれば、Ｔｉは１３
０ｎｍ、Ｎｂは６０ｎｍの厚さで最適バイアス磁界とな
る。これに対し上記のアモルファス軟磁性体をバイアス
膜に使用すれば２０ｎｍで最適バイアス磁界を得られる
ので、バイアス膜への分流量が減少し、このため素子の
出力は約２倍となる。T a -Z r amorphous soft magnetic material (electrical resistivity 3
0 μΩ mark), the electrical resistivity of the magnetoresistive film is 20 μΩ [and the thickness is 45 nm, Ti is 13
The optimum bias magnetic field is obtained with a thickness of 0 nm and a thickness of 60 nm for Nb. On the other hand, if the amorphous soft magnetic material described above is used for the bias film, an optimum bias magnetic field can be obtained at 20 nm, so the amount of shunt to the bias film is reduced, and the output of the device is approximately doubled.
しかし、アモルファス磁性体の電気抵抗率が磁気抵抗効
果膜の電気抵抗率より低くなると、磁気的結合によるバ
イアス磁界が急激に減少する。これは、磁気的結合にバ
イアス膜の空間的配置条件があり、軟磁性膜の電気抵抗
率が低くなると、必要とする膜厚が減少し、軟磁性膜に
侵入する磁界が十分でなくなるためである。この条件は
、軟磁性体の飽和磁束密度および透磁率によっても大き
な影響を受ける。However, when the electrical resistivity of the amorphous magnetic material becomes lower than that of the magnetoresistive film, the bias magnetic field due to magnetic coupling rapidly decreases. This is because there are spatial arrangement conditions for the bias film for magnetic coupling, and as the electrical resistivity of the soft magnetic film decreases, the required film thickness decreases and the magnetic field penetrating the soft magnetic film becomes insufficient. be. This condition is also greatly influenced by the saturation magnetic flux density and magnetic permeability of the soft magnetic material.
一方、当該素子の出力の直線性を改善し、出力を増大す
るためには、差動化が極めて効果的である。On the other hand, differentialization is extremely effective in improving the linearity of the output of the device and increasing the output.
差動素子は第４図で示すような構造で、磁気抵抗効果膜
１と軟磁性膜６の２層膜に７．８．９で示す電極および
リード線を設けたものである。電流によるバイアス磁界
は通電の向きを矢印１０゜１１のように逆向きとすれば
電極７と８、および８と９間の素子には逆のバイアス磁
界が印加され、画素子の軟磁性体によるバイアス磁界も
通電による発生磁界が保磁力以上であれば互いに逆向き
に磁化され、磁気抵抗効果膜には等しいバイアス磁界が
印加される。The differential element has a structure as shown in FIG. 4, in which a two-layer film of a magnetoresistive film 1 and a soft magnetic film 6 is provided with electrodes and lead wires shown at 7.8.9. If the bias magnetic field due to the current is reversed as shown by the arrows 10 and 11, the opposite bias magnetic field will be applied to the element between electrodes 7 and 8 and between electrodes 8 and 9. If the bias magnetic field is greater than or equal to the coercive force, the bias magnetic fields are magnetized in opposite directions, and the same bias magnetic field is applied to the magnetoresistive film.
以下、本発明の一実施例を説明する。 An embodiment of the present invention will be described below.
実施例１
基板として１本実施例では磁気シールドも兼ねるＮ ｉ
−Ｚ ｎフェライト上にＡＱｚＯｓ膜を用いた。Example 1 In this example, Ni was used as a substrate and also served as a magnetic shield.
-AQzOs film was used on Zn ferrite.
磁気ギャップ膜としてはスパッタ法で形成した基板上に
、Ｎｉ−１９％Ｆｅのパーマロイ膜を５０ｎｍ蒸着する
。次にＮｂ−５％Ｔ ａ −３％Ｚｒアモルファス磁性
体を３０ｎｍスパッタにより形成する。As a magnetic gap film, a Ni-19% Fe permalloy film is deposited to a thickness of 50 nm on a substrate formed by sputtering. Next, a 30 nm thick Nb-5% Ta-3% Zr amorphous magnetic material is formed by sputtering.
これを例えば第４図で示すような形状に加工し、次に磁
気ギャップ用のＡ Ｑ ｘ○３膜を形成したのち。After processing this into a shape as shown in FIG. 4, for example, and then forming an A Q x○3 film for a magnetic gap.
磁気シールド用のパーマロイ膜あるいはフェライトを形
成する。Form a permalloy film or ferrite for magnetic shielding.
以上のようにして作製した複合磁気抵抗効果素子の電圧
−磁界特性を第５図の曲線１２に示す６第５図から明ら
かなように本実施例ではバイアス磁界は最適となってい
るが、同時に比較のために作製したＮｂ／パーマロイ複
合膜でＮｂを３０ｎｍ、パーマロイを５０ｎｍとした素
子では、曲線１３で示すように、電流バイアスによる効
果だけしかないので、バイアス磁界は本発明の約１／３
で、不十分なバイアス強度である。The voltage-magnetic field characteristics of the composite magnetoresistive element fabricated as described above are shown in curve 12 of FIG. 5.6 As is clear from FIG. In the device fabricated for comparison with a Nb/permalloy composite film in which Nb is 30 nm and permalloy is 50 nm, as shown by curve 13, there is only an effect due to current bias, so the bias magnetic field is about 1/3 of that of the present invention.
Therefore, the bias strength is insufficient.
実施例２
実施例１と同じ素子構造でアモルファス磁性体の代りに
軟磁性体であるセンタスト合金を用いた素子でも同様な
バイアス磁界強度を示す素子が得られた。本実施例にお
いても、センタストと同じ電気抵抗率の金属膜を用いた
素子では、バイアス強度が不十分であった。Example 2 An element having the same element structure as Example 1 but using a centast alloy, which is a soft magnetic material, instead of an amorphous magnetic material, was also obtained, showing a similar bias magnetic field strength. In this example as well, the bias strength was insufficient in an element using a metal film having the same electrical resistivity as Centast.
実施例３
実施例１に於て、本発明の第５図１２で示した特性を得
るためには、Ｎｂをシャント膜に用いた場合、６０ｎｍ
の厚さが必要であった。Ｎｂの厚さを増大することによ
って磁気抵抗膜への分流は約３１５となり、素子出力も
３１５となった。すなわち、本発明により、最適バイア
ス状態で素子出力は従来の約２倍となる。Example 3 In Example 1, in order to obtain the characteristics shown in FIG. 5 and 12 of the present invention, when Nb is used for the shunt film,
thickness was required. By increasing the thickness of Nb, the shunt to the magnetoresistive film became approximately 315, and the device output also became 315. That is, according to the present invention, the element output in the optimum bias state is approximately twice that of the conventional device.
本発明によれば、磁気抵抗効果素子の出力が従来のシャ
ントバイアス型素子に比較して、出力が約２倍に向上す
る。従って磁気ヘッドのトラック幅の減少によって出力
が低下する高密度磁気記録装置においても、シャント型
磁気抵抗ヘッドの実用化が可能となる。According to the present invention, the output of the magnetoresistive element is approximately twice as high as that of a conventional shunt bias type element. Therefore, the shunt type magnetoresistive head can be put to practical use even in high-density magnetic recording devices where the output decreases due to a decrease in the track width of the magnetic head.
第１図は本発明の一実施例の複合型ヘッドの断面図、第
２図は従来のシャントバイアス型磁気抵抗効果ヘッドの
断面図、第３図は従来の軟磁性体近接バイアス型ヘッド
の断面図、第４図は本発明の実施例の差動型素子の斜視
図、第５図は本発明と従来のシャント型素子の出力特性
図である。
毛 ｌ 旧
第 ２ 口
”Ｊｓ 口FIG. 1 is a sectional view of a composite head according to an embodiment of the present invention, FIG. 2 is a sectional view of a conventional shunt bias type magnetoresistive head, and FIG. 3 is a sectional view of a conventional soft magnetic proximity bias type head. 4 is a perspective view of a differential type element according to an embodiment of the present invention, and FIG. 5 is an output characteristic diagram of a shunt type element of the present invention and a conventional shunt type element. Hair l old second mouth”Js mouth
Claims (1)
合金膜に磁気抵抗効果を示さない軟磁性膜を重ね合せた
２層膜を用い、軟磁性膜への電流の分流によるバイアス
磁界印加と軟磁性膜と磁気抵抗膜の磁気的結合によるバ
イアス効果とを複合させたことを特徴とする複合磁気抵
抗効果素子。 ２、請求項第１項記載の磁気抵抗素子に於て、差動型構
造になつていることを特徴とする複合磁気抵抗効果素子
。 ３、磁気ヘッドのセンサ部とこれに群がるリード線部分
まで磁気抵抗膜と軟磁性金属膜との２層膜となつている
ことを特徴とする複合磁気抵抗効果素子。 ４、前記軟磁性膜がアモルファス磁性体であることを特
徴とする請求項第１項記載の複合磁気抵抗効果素子。 ５、軟磁性膜がセンタスト合金であることを特徴とする
請求項第１項記載の複合磁気抵抗効果素子。[Claims] 1. In a magnetoresistive element, a two-layer film in which a soft magnetic film that does not show a magnetoresistive effect is superimposed on an alloy film that shows a magnetoresistive effect is used, and current is shunted to the soft magnetic film. What is claimed is: 1. A composite magnetoresistive element characterized by combining the application of a bias magnetic field by a magnetic field and a bias effect by magnetic coupling between a soft magnetic film and a magnetoresistive film. 2. A composite magnetoresistive element according to claim 1, characterized in that it has a differential structure. 3. A composite magnetoresistive element characterized in that the sensor part of the magnetic head and the lead wires clustered around the sensor part are made of a two-layer film of a magnetoresistive film and a soft magnetic metal film. 4. The composite magnetoresistive element according to claim 1, wherein the soft magnetic film is an amorphous magnetic material. 5. The composite magnetoresistive element according to claim 1, wherein the soft magnetic film is a centast alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304107A JPH02151088A (en) | 1988-12-02 | 1988-12-02 | Compound magnetoresistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304107A JPH02151088A (en) | 1988-12-02 | 1988-12-02 | Compound magnetoresistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02151088A true JPH02151088A (en) | 1990-06-11 |
Family
ID=17929115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63304107A Pending JPH02151088A (en) | 1988-12-02 | 1988-12-02 | Compound magnetoresistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151088A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909344A (en) * | 1995-11-30 | 1999-06-01 | International Business Machines Corporation | Magnetoresistive sensor with high resistivity flux guide |
| US7746207B2 (en) | 2003-11-05 | 2010-06-29 | Tdk Corporation | Coil device |
-
1988
- 1988-12-02 JP JP63304107A patent/JPH02151088A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5909344A (en) * | 1995-11-30 | 1999-06-01 | International Business Machines Corporation | Magnetoresistive sensor with high resistivity flux guide |
| US7746207B2 (en) | 2003-11-05 | 2010-06-29 | Tdk Corporation | Coil device |
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