JPH02151069A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02151069A JPH02151069A JP30412388A JP30412388A JPH02151069A JP H02151069 A JPH02151069 A JP H02151069A JP 30412388 A JP30412388 A JP 30412388A JP 30412388 A JP30412388 A JP 30412388A JP H02151069 A JPH02151069 A JP H02151069A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- cathode electrode
- electrode
- end section
- surface protecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010931 gold Substances 0.000 claims abstract description 17
- 229910052737 gold Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910001020 Au alloy Inorganic materials 0.000 claims abstract description 6
- 239000003353 gold alloy Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 230000035939 shock Effects 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Die Bonding (AREA)
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、中間緩衝板を有する圧接型半導体装置のカソ
ード電極端部構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cathode electrode end structure of a pressure contact type semiconductor device having an intermediate buffer plate.
従来の半導体装置のカソード電極は、特公昭４８−４２
０２２の構成図説明の通り、全面アルミニウム、又は、
全面金−アンチモン合金、又は、全面金部材を使用して
半導体基板とのオーミック性をとっている。最近では、
材料コスト、加工性から全面アルミニウムが一般的に使
用されている。中間緩衝板は、このカソード電極とカソ
ードポストとの間にあり、圧接時の応力緩和の役目をし
ており、カソード電極および、カソードポストへの熱的
接着（合金、半田揚げ等）は行なわず無圧接の場合は、
すべりがあるようになっている。その為、無圧接時の固
定は半導体基板接合の表面保護材を硬化させるときに型
を形成し、その型の中には中間緩衝板を入れて横ずれを
止める固定方式となっている。その型部の表面保護材接
着面はカソード電極のアルミニウムをそのまま使用する
構成とされており、表面保護材の接着力についての配慮
がされていなかった。The cathode electrode of conventional semiconductor devices was developed by Japanese Patent Publication No. 48-42
As explained in the configuration diagram of 022, the entire surface is made of aluminum, or
Ohmic properties with the semiconductor substrate are achieved by using a full gold-antimony alloy or a full gold member. recently,
Fully aluminum is generally used due to material cost and workability. The intermediate buffer plate is located between the cathode electrode and the cathode post, and serves to relieve stress during pressure bonding, and does not require thermal adhesion (alloy, soldering, etc.) to the cathode electrode and cathode post. In the case of pressureless welding,
There is some slippage. Therefore, for fixing during pressureless bonding, a mold is formed when the surface protection material used to bond the semiconductor substrates is cured, and an intermediate buffer plate is inserted into the mold to prevent lateral displacement. The aluminum of the cathode electrode was used as is for the surface protection material adhesive surface of the mold, and no consideration was given to the adhesive strength of the surface protection material.
上記従来例では、カソード電極の部材が一般的にアルミ
ニウムの為、半導体基板端部の接合表面処理によりアル
ミニウム表面粒界が亀裂溝状に進行し、その粒界溝に入
いった処理液が洗浄でとりきれず残る。その上へ表面保
護材（一般にシリコンゴム系）を塗布し硬化されるが、
粒界溝に残留処理液があるため、その部分では表面保護
材の接着が起こらない。見掛上は、粒界溝で固定されて
いるようにみえるが、組込後の熱処理工程、特に、エイ
ジング試験での熱サイクル、又は通電動作の半導体基板
温度上昇、下降等により、表面保護材に膨張収縮のサイ
クルが加わり、接着してない界面から剥離が発生する。In the above conventional example, since the cathode electrode material is generally aluminum, the aluminum surface grain boundaries develop into crack grooves due to the bonding surface treatment at the edge of the semiconductor substrate, and the processing liquid that enters the grain boundary grooves is cleaned. I can't take it all and it remains. A surface protection material (generally silicone rubber type) is applied on top of it and cured.
Since there is residual treatment liquid in the grain boundary grooves, adhesion of the surface protection material does not occur in those areas. Although it appears to be fixed by grain boundary grooves, the surface protective material may be damaged due to the heat treatment process after assembly, especially the heat cycle during aging tests, or the rise and fall of the semiconductor substrate temperature during energizing operation. A cycle of expansion and contraction is added to the bond, and peeling occurs from the unbonded interface.
又、薬品の残留分と表面保護材を硬化する架橋剤との反
応により、アルミニウム表面の腐食が発生し、さらに接
着力の低下を招く。この状態で組込まれた場合、半導体
基板上の中間緩衝板積ずれ防止の為のガイドの役を果さ
ず、無圧接でのｉｍ取扱い中の震動により中間緩衝板が
ずれる。ずれた状態で圧接すると偏荷重となり半導体装
置の特性不良を起こさせる問題があった。本発明は、カ
ソード電極端部での表面保護材剥離を防止し、中間緩衝
板の横ずれしない半導体装置を提供することを目的とす
る。In addition, the reaction between the chemical residue and the crosslinking agent that hardens the surface protection material causes corrosion of the aluminum surface, further leading to a decrease in adhesive strength. When assembled in this state, the intermediate buffer plate does not serve as a guide to prevent displacement of the intermediate buffer plate on the semiconductor substrate, and the intermediate buffer plate is displaced due to vibrations during im handling without pressure. If the two are pressed together in a misaligned state, an uneven load will be generated, causing a problem that the characteristics of the semiconductor device will be deteriorated. SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device in which peeling of a surface protection material at the end of a cathode electrode is prevented, and in which an intermediate buffer plate does not shift laterally.
上記問題点は、半導体装置カソード電極の表面保護材と
接触する端部の２ケ所以上、もしくは全周を化学的に安
定な材料である金、または金の合金部材にすることによ
り解決される。The above-mentioned problem can be solved by using gold, which is a chemically stable material, or a gold alloy member at two or more locations or the entire circumference of the end portion of the semiconductor device cathode electrode that contacts the surface protection material.
金、または金の合金で構成された表面は、化学的に安定
であり、半導体基板端部の薬品処理による溶は出しがな
く、粒界の発生が起こりにくい為、微細なところでの処
理液残りがなく、処理後に塗布し硬化形成する表面保護
材と、界面での接着不具合がなくなり、中間緩衝板が横
ずれなく固定される。Surfaces made of gold or gold alloys are chemically stable and do not bleed out during chemical treatment at the edges of the semiconductor substrate, making it difficult for grain boundaries to form, so processing liquid remains in minute areas. There is no adhesion problem at the interface with the surface protection material that is applied and hardened after treatment, and the intermediate buffer plate is fixed without lateral displacement.
以下図面を参照してこの発明の一実施例について説明す
る。An embodiment of the present invention will be described below with reference to the drawings.
第１図において、半導体装置の中にカソードボスト１と
アノードボスト８がある。半導体支持板７と半導体基板
６の上に、半導体基板６とオーミック性をほどこしたカ
ソード電極３があり、その端部に蒸着または、メツキ等
により接着させた金電極４を形成した。その金電極４の
上に表面保護林５を塗布、硬化してガイドとし、カソー
ド電極３の上にのせた中間緩衝板２を固定する。In FIG. 1, there are a cathode post 1 and an anode post 8 in a semiconductor device. On the semiconductor support plate 7 and the semiconductor substrate 6, there was a cathode electrode 3 which had ohmic properties with the semiconductor substrate 6, and a gold electrode 4 was formed at the end thereof by adhesion by vapor deposition or plating. A surface protection layer 5 is applied onto the gold electrode 4 and hardened to serve as a guide, and the intermediate buffer plate 2 placed on the cathode electrode 3 is fixed.
第２図は、従来のカソード電極３の端部上面に金電極を
形成した構造を示し、その他部材の構成は第１図と同一
である。第１図、第２図の構成共、表面保護材の接着強
度は１８ｋｇ／ａＪ以上となる。FIG. 2 shows a structure in which a gold electrode is formed on the upper surface of the end of a conventional cathode electrode 3, and the configuration of other members is the same as in FIG. 1. In both the configurations shown in FIGS. 1 and 2, the adhesive strength of the surface protection material is 18 kg/aJ or more.
第３図は、カソード電極３と金電極４の構成を上面より
みたものである。金電極４の構成は、この図のように円
周全体でなくともよく、円周上最低２ケ所の配置構成で
もよい。この場合、金電極表面積を合計でＩＣｉ以上確
保することが望ましく、金電極部の表面保護材の接着強
度を１８ｋｇ／ｃｄ以上確保できる。又、金電極４は、
金の含有が８０％以上の合金電極（例えば金とスズの合
金又は、金とアンチモンの合金等）でもよい。FIG. 3 shows the structure of the cathode electrode 3 and gold electrode 4 viewed from above. The configuration of the gold electrodes 4 does not have to be over the entire circumference as shown in this figure, but may be arranged at at least two locations on the circumference. In this case, it is desirable to ensure that the total surface area of the gold electrodes is equal to or greater than ICi, and the adhesive strength of the surface protection material of the gold electrode portion can be ensured equal to or greater than 18 kg/cd. Moreover, the gold electrode 4 is
An alloy electrode containing 80% or more of gold (for example, an alloy of gold and tin or an alloy of gold and antimony) may be used.
いずれの場合も第４図の従来構成による表面保護材の接
着強度０．５〜９ｋｇ／ａｌに比べ、表面保護材の引張
り強さ同等の１８ｋｇ／ｄ以上を確保でき、中間緩衝板
の保持に必要な接着強度４．６ｋｇ／ｃＪの３倍以上に
改善される。In either case, compared to the adhesive strength of the surface protection material of 0.5 to 9kg/al in the conventional configuration shown in Fig. 4, it is possible to secure a tensile strength of 18kg/d or more, which is equivalent to the tensile strength of the surface protection material, and to hold the intermediate buffer plate. This improves the adhesive strength by more than three times the required adhesive strength of 4.6 kg/cJ.
本発明によれば、カソード電極端部での表面保護材の剥
離が起こらず、接着強度を表面保護材の引張り強さ同等
の１８ｋｇ／ａ＋Ｔ以上とすることができ中間緩衝板の
固定が確実となる。According to the present invention, the surface protection material does not peel off at the end of the cathode electrode, and the adhesive strength can be increased to 18 kg/a+T or more, which is equivalent to the tensile strength of the surface protection material, and the intermediate buffer plate can be securely fixed. Become.
第１図は本発明の一実施例の構成部材を示す図、第２図
は要部を示す図、第３図は要部構成の上面図、第４図は
従来装置の要部を示す図である。
１・・カソードボスト、２・・・中間緩衝板、３・・・
カソード電極、４・・・金電極、５・・・表面保護材、
６・・・半導体基板、７・・・半導体支持板、８・・・
アノードボスト。Fig. 1 is a diagram showing the constituent members of an embodiment of the present invention, Fig. 2 is a diagram showing the main parts, Fig. 3 is a top view of the main part configuration, and Fig. 4 is a diagram showing the main parts of a conventional device. It is. 1...Cathode boss, 2...Intermediate buffer plate, 3...
Cathode electrode, 4... Gold electrode, 5... Surface protection material,
6... Semiconductor substrate, 7... Semiconductor support plate, 8...
Anode Bost.
Claims (1)
半導体基板表面保護材にて固定する圧接型半導体装置に
おいて、前記カソード電極の端部を金または、金の合金
部材で構成したことを特徴とする半導体装置。1. A press-contact type semiconductor device in which an intermediate buffer plate is fixed with a semiconductor substrate surface protection material applied to the end of the cathode electrode, characterized in that the end of the cathode electrode is made of gold or a gold alloy member. semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30412388A JPH02151069A (en) | 1988-12-02 | 1988-12-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30412388A JPH02151069A (en) | 1988-12-02 | 1988-12-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02151069A true JPH02151069A (en) | 1990-06-11 |
Family
ID=17929311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30412388A Pending JPH02151069A (en) | 1988-12-02 | 1988-12-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151069A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04120772A (en) * | 1990-09-11 | 1992-04-21 | Mitsubishi Electric Corp | Pressure contact type semiconductor device |
-
1988
- 1988-12-02 JP JP30412388A patent/JPH02151069A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04120772A (en) * | 1990-09-11 | 1992-04-21 | Mitsubishi Electric Corp | Pressure contact type semiconductor device |
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