JPH02149769U - - Google Patents

Info

Publication number
JPH02149769U
JPH02149769U JP5756989U JP5756989U JPH02149769U JP H02149769 U JPH02149769 U JP H02149769U JP 5756989 U JP5756989 U JP 5756989U JP 5756989 U JP5756989 U JP 5756989U JP H02149769 U JPH02149769 U JP H02149769U
Authority
JP
Japan
Prior art keywords
susceptor
epitaxial growth
type epitaxial
nozzle
belgear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5756989U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5756989U priority Critical patent/JPH02149769U/ja
Publication of JPH02149769U publication Critical patent/JPH02149769U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP5756989U 1989-05-18 1989-05-18 Pending JPH02149769U (OSRAM)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5756989U JPH02149769U (OSRAM) 1989-05-18 1989-05-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5756989U JPH02149769U (OSRAM) 1989-05-18 1989-05-18

Publications (1)

Publication Number Publication Date
JPH02149769U true JPH02149769U (OSRAM) 1990-12-21

Family

ID=31582397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5756989U Pending JPH02149769U (OSRAM) 1989-05-18 1989-05-18

Country Status (1)

Country Link
JP (1) JPH02149769U (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524250A (ja) * 2004-02-25 2007-08-23 アイクストロン、アーゲー Ｍｏｃｖｄ反応器のための入口システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844833A (OSRAM) * 1971-05-21 1973-06-27
JPS51112263A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor surface processor base
JPS599084B2 (ja) * 1977-02-21 1984-02-29 横河電機株式会社 磁気ディスクの予備トラツク切換装置
JPS61212014A (ja) * 1985-03-18 1986-09-20 Tokyo Erekutoron Kk 化学的気相成長法による半導体ウエハ処理装置
JPS63117417A (ja) * 1986-11-05 1988-05-21 Nec Corp 気相成長装置
JPS63147894A (ja) * 1986-12-09 1988-06-20 Kyushu Denshi Kinzoku Kk 気相成長方法と縦型気相成長装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844833A (OSRAM) * 1971-05-21 1973-06-27
JPS51112263A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor surface processor base
JPS599084B2 (ja) * 1977-02-21 1984-02-29 横河電機株式会社 磁気ディスクの予備トラツク切換装置
JPS61212014A (ja) * 1985-03-18 1986-09-20 Tokyo Erekutoron Kk 化学的気相成長法による半導体ウエハ処理装置
JPS63117417A (ja) * 1986-11-05 1988-05-21 Nec Corp 気相成長装置
JPS63147894A (ja) * 1986-12-09 1988-06-20 Kyushu Denshi Kinzoku Kk 気相成長方法と縦型気相成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007524250A (ja) * 2004-02-25 2007-08-23 アイクストロン、アーゲー Ｍｏｃｖｄ反応器のための入口システム

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