JPH02141497A - Epitaxial growth of iii-v compound semiconductor - Google Patents
Epitaxial growth of iii-v compound semiconductorInfo
- Publication number
- JPH02141497A JPH02141497A JP29434588A JP29434588A JPH02141497A JP H02141497 A JPH02141497 A JP H02141497A JP 29434588 A JP29434588 A JP 29434588A JP 29434588 A JP29434588 A JP 29434588A JP H02141497 A JPH02141497 A JP H02141497A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- epitaxially grown
- film
- epitaxial growth
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 150000001875 compounds Chemical class 0.000 title claims description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 239000012808 vapor phase Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 description 67
- 238000001947 vapour-phase growth Methods 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 101100313164 Caenorhabditis elegans sea-1 gene Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体ウェハ製造技術さらにはｍ −■族化
合物半導体の気相エピタキシャル成長方法に利用して有
効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a technology that is effective for use in a semiconductor wafer manufacturing technology and a vapor phase epitaxial growth method for an m-■ group compound semiconductor.
［従来の技術］
一般に、不純物をドーピングしたＧａＡｓ、ＧａＰ、Ｉ
ｎＰ、ＩｎＡｓ等の１■−■族化合物半導体を基板上に
気相エピタキシャル成長させるには、例えば第６図に示
すような気相成長装置を用いて行なっている。[Prior art] Generally, impurity-doped GaAs, GaP, I
In order to vapor phase epitaxially grow a 1-2 group compound semiconductor such as nP or InAs on a substrate, a vapor phase growth apparatus such as that shown in FIG. 6 is used, for example.
この気相成長装置は、両端が閉塞された円筒状をなす石
英製の反応管１と、この反応管１を外部から加熱する電
気炉２とからなり、電気炉２は反応管１の軸方向温度分
布を制御できるように構成されている。この気相成長装
置によりＧａＡｓを気相エピタキシャル成長させる場合
、反応管１内には、上流側（図では左側）に材料源であ
るガリウム３を収納した原料ボート４を配置し、下流側
に気相成長をさせるＧ ａ Ａ ｓ基板５を配置する。This vapor phase growth apparatus consists of a cylindrical quartz reaction tube 1 with both ends closed, and an electric furnace 2 that heats the reaction tube 1 from the outside. It is configured so that temperature distribution can be controlled. When GaAs is vapor-phase epitaxially grown using this vapor-phase growth apparatus, a raw material boat 4 containing gallium 3, which is a material source, is arranged on the upstream side (left side in the figure) in the reaction tube 1, and a vapor-phase epitaxy is placed on the downstream side. A GaAs substrate 5 to be grown is placed.
一方、反応管１の上流端には、原料ボート４をバイパス
してガスを基板５の上流に供給するための第１のガス導
入管６ａと第２のガス導入管６ｂが接続されている。ま
た、反応管１の上流端には原料ボート４にガスを供給す
るための第３のガス導入管６ｃが接続されている。On the other hand, a first gas introduction pipe 6a and a second gas introduction pipe 6b are connected to the upstream end of the reaction tube 1 to bypass the raw material boat 4 and supply gas upstream of the substrate 5. Further, a third gas introduction pipe 6c for supplying gas to the raw material boat 4 is connected to the upstream end of the reaction tube 1.
そして、ガス導入管６ｂ、６ｃの管路途中にはそれぞれ
Ａ ｓ Ｃｎ３の入ったバブラ８ｂ、８ｃが介装されて
いる。ガス導入管６ｂ、６ｃには、Ｈ２ガスが導入され
、バブラ８ ｂ、８ ｃ内のＡ ｓ Ｃｎ ３中へＨ２
ガスを吹き込むことによってＡ ｓ ＣＱ３＋Ｈ２の混
合ガスを反応管１内に供給できるように構成されている
。また、バブラ８ｂ、８ｃは温度制御可能な恒温槽（図
示省略）に入れ、温度を制御することによってＡ ｓ
ＣＱ ３の蒸発量を制御するようにしである。なお、９
は反応管１の下流端に接続された排気管である。Bubblers 8b and 8c containing A s Cn3 are interposed in the middle of the gas introduction pipes 6b and 6c, respectively. H2 gas is introduced into the gas introduction pipes 6b and 6c, and H2 gas is introduced into the A s Cn 3 in the bubblers 8b and 8c.
It is configured such that a mixed gas of A s CQ3+H2 can be supplied into the reaction tube 1 by blowing the gas. In addition, the bubblers 8b and 8c are placed in a temperature-controllable constant temperature bath (not shown), and by controlling the temperature, A s
This is to control the amount of CQ 3 evaporated. In addition, 9
is an exhaust pipe connected to the downstream end of the reaction tube 1.
以下の説明ではガス導入管６ａからなるガス供給系をＡ
系統と、また、バブラ８ｂおよびガス導入管６ｂからな
るガス供給系をＢ系統と、さらに、バブラ８ｃおよびガ
ス導入管８ｃからなるガス供給系をＣ系統と呼ぶ。In the following explanation, the gas supply system consisting of the gas introduction pipe 6a is referred to as A.
The gas supply system consisting of the bubbler 8b and the gas introduction pipe 6b is called the B system, and the gas supply system consisting of the bubbler 8c and the gas introduction pipe 8c is called the C system.
従来、上記構成の気相成長装置によりＧ ａ Ａ ｓの
気相成長を行なうには、先ずＣ系統からＡ ｓ ＣＱ３
＋Ｈ２の混合ガスの供給を開始する。次に、所定時間経
過後、Ｂ系統からＡｓＣθ３＋Ｈ２の混合ガスを供給す
ると同時に、Ａ系統からドーピングガスを供給し始め、
気相成長を行なう。そして、成長終了後は、Ａ、Ｂ、Ｃ
系統全てのガス供給を同時に停止していた。Conventionally, in order to perform vapor phase growth of Ga A s using a vapor phase growth apparatus having the above configuration, first, A s CQ3 is grown from the C system.
Start supplying +H2 mixed gas. Next, after a predetermined period of time has passed, the mixed gas of AsCθ3+H2 is supplied from the B system, and at the same time, the doping gas is started to be supplied from the A system,
Carry out vapor phase growth. After the growth is complete, A, B, C
Gas supply to all systems was stopped at the same time.
しかし、このようにガス供給を同時に停止すると、ドー
ピングガスの分圧の減少が遅れるために。However, if the gas supply is stopped simultaneously in this way, the reduction in the partial pressure of the doping gas will be delayed.
ドーピングガス分圧が相対的に高まって、エピタキシャ
ル成長膜の最終形成部分（表面部分）でキャリア濃度が
高くなってしまうという問題があった。キャリア濃度が
エピタキシャル成長膜の表面にて変動すると、ＦＥＴ等
のデバイスを製造する際、正常な金属−半導体電極を得
ることが困難となる。There is a problem in that the doping gas partial pressure becomes relatively high, resulting in a high carrier concentration in the final formed portion (surface portion) of the epitaxially grown film. If the carrier concentration varies at the surface of the epitaxially grown film, it becomes difficult to obtain a normal metal-semiconductor electrode when manufacturing devices such as FETs.
そこで、例えば特開昭６２−２０２５１．５号公報に開
示されるように、Ａ系統のドーピングガス供給とＣ系統
のエピタキシャル成長用ガス供給とを同時に停止した後
、５〜１０秒程度経過してからＢ系統ガス供給を停止す
ることにより、エピタキシャル成長膜内でのキャリア濃
度の均一化を図った技術が提案されている。これは、Ｂ
系統のＡｓＣＱ３＋Ｈ，の混合ガスが、反応管１内のＡ
ｓ２の分圧を高めてドーピングガスの分圧を下げ、不純
物濃度を下げる作用を有するためである。Therefore, as disclosed in JP-A No. 62-20251.5, for example, after stopping the supply of doping gas for system A and the supply of epitaxial growth gas for system C at the same time, after about 5 to 10 seconds have elapsed, A technique has been proposed in which the carrier concentration in the epitaxially grown film is made uniform by stopping the supply of B-system gas. This is B
The mixed gas of AsCQ3+H in the system is A in the reaction tube 1.
This is because it has the effect of increasing the partial pressure of s2, lowering the partial pressure of the doping gas, and lowering the impurity concentration.
［発明が解決しようとする課題］
しかし、上記公報に開示された気相エピタキシャル成長
方法では、ある程度のキャリア濃度の均一化を図ること
はできるものの、均一化のためのガス濃度の制御等が困
難で、エピタキシャル成長膜の表面部分と他の部分とで
完全な均一化を図ることはできなかった。[Problems to be Solved by the Invention] However, although the vapor phase epitaxial growth method disclosed in the above publication can achieve a certain degree of uniformity of carrier concentration, it is difficult to control the gas concentration for uniformity. However, it was not possible to achieve complete uniformity between the surface portion and other portions of the epitaxially grown film.
本発明は、かかる従来の問題点に鑑みてなされたもので
、成長させたエピタキシャル成長膜の表面にあるキャリ
ア濃度が不均一な部分をエツチングすることにより、エ
ピタキシャル成長膜の厚さ方向全体にわたってキャリア
濃度が均一な■−■族化合物半導体のエピタキシャル成
長膜を得ることができる■−■族化合物半導体の気相エ
ピタキシャル成長方法を提供することを目的とする。The present invention was made in view of such conventional problems, and by etching the portion where the carrier concentration is uneven on the surface of the epitaxially grown film, the carrier concentration is increased throughout the thickness direction of the epitaxially grown film. It is an object of the present invention to provide a method for vapor phase epitaxial growth of a ■-■ group compound semiconductor, which can obtain a uniform epitaxially grown film of a ■-■ group compound semiconductor.
［課題を解決するための手段］
上記目的を達成するために、本発明は、■族原料と基板
を収容した反応管中へエピタキシャル成長用ガスとドー
ピングガスとを供給して■−■族化合物半導体基板上に
不純物をドーピングした■−■族化合物半導体のエピタ
キシャル成長膜を気相成長させる気相エピタキシャル成
長方法において、所定の膜厚より厚くエピタキシャル層
が形成された後、基板上に形成したエピタキシャル成長
膜の表面を所定の膜厚までエツチングするようにした。[Means for Solving the Problems] In order to achieve the above object, the present invention supplies an epitaxial growth gas and a doping gas into a reaction tube containing a group III raw material and a substrate to produce a group III compound semiconductor. In a vapor phase epitaxial growth method in which an epitaxially grown film of a ■-■ group compound semiconductor doped with impurities is grown in a vapor phase on a substrate, the surface of the epitaxially grown film formed on the substrate after an epitaxial layer is formed thicker than a predetermined film thickness. is etched to a predetermined film thickness.
［作用］
上記のようなｍ−ｖ族化合物半導体の気相エピタキシャ
ル成長方法においては、キャリア濃度が不均一となり易
いエピタキシャル成長膜表面が、気相成長停止後に導入
されるエツチングガスにより削除されるため、基板表面
のエピタキシャル成長膜の厚さ方向全体に亘ってキャリ
ア濃度を均一化することができる。[Function] In the vapor phase epitaxial growth method for m-v group compound semiconductors as described above, the surface of the epitaxially grown film, where the carrier concentration tends to be non-uniform, is removed by the etching gas introduced after the vapor phase growth is stopped. The carrier concentration can be made uniform over the entire thickness of the epitaxially grown film on the surface.
［実施例］
第２図に、本発明に係る気相エピタキシャル成長方法に
使用する気相成長装置の一例を示す。[Example] FIG. 2 shows an example of a vapor phase growth apparatus used in the vapor phase epitaxial growth method according to the present invention.
この気相成長装置は、第７図に示すものとほぼ同様であ
るが、電気炉２は反応管１の軸方向に移動可能であり、
反応管１を室温で急冷することができるように構成され
ている。また、ガス導入管６ｂ、６ｃには、三方弁１０
ｂ、１０ｃ、ｌｌｃがそれぞれ介装されており、Ｎ２ガ
スをバブラ８ｂ、８ｃ内のＡ ｓ ＣＱ ３に吹き込ま
せてＡ ｓ ＣＱ ３＋Ｈ２の混合ガスとしたり、Ｎ２
ガスをそのまま反応管１内へ供給できるように設けられ
ている。This vapor phase growth apparatus is almost the same as that shown in FIG. 7, but the electric furnace 2 is movable in the axial direction of the reaction tube 1,
The reaction tube 1 is configured to be rapidly cooled at room temperature. In addition, a three-way valve 10 is provided in the gas introduction pipes 6b and 6c.
b, 10c, and llc are interposed respectively, and N2 gas is blown into A s CQ 3 in the bubblers 8b and 8c to form a mixed gas of A s CQ 3 + H2, and N2 gas is
It is provided so that the gas can be supplied into the reaction tube 1 as it is.
本実施例においては、上記気相成長装置を用いて第１図
に示すような手順に従って、Ａ、Ｂ、Ｃ系統のガスの供
給開始、停止を行なうことにより、Ｇ ａ Ａ ｓ基板
５上にＳｉドープＧ ａ Ａ ｓ層を気相成長させる。In this example, by starting and stopping the supply of gases of A, B, and C systems according to the procedure shown in FIG. 1 using the above-mentioned vapor phase growth apparatus, G A Si-doped GaAs layer is grown in a vapor phase.
すなわち、時刻Ｔ。−Ｔ１まではＢおよびＣ系統からＮ
２ガスを供給して反応管１内を一旦Ｎ２ガスで置換した
後、時刻Ｔ１〜Ｔ２までＮ２ガスを供給して反応管１内
をＮ２で置換し、電気炉２を作動させ、反応管１内の温
度分布を第３図に示すように、Ｇａ源は８２０℃に、基
板５は７５０℃になるように保持する。That is, time T. -N from B and C systems up to T1
After replacing the inside of the reaction tube 1 with N2 gas, supplying N2 gas from time T1 to T2 to replace the inside of the reaction tube 1 with N2, operating the electric furnace 2, and replacing the inside of the reaction tube 1 with N2 gas. As shown in FIG. 3, the temperature distribution of the Ga source is maintained at 820° C., and the temperature of the substrate 5 is maintained at 750° C.
次に、時刻Ｔ２から、ＢおよびＣ系統を介してＡ ｓ
ＣＱ ３を含有するＮ２ガスを供給する。すると、先ず
ボー１〜部４ではＡ ｓ ４がＧａ中に溶解限度まで溶
は込んでＧ ａ Ａ ｓクラストが生成されるとともに
、このとき発生したＨＣＱが下流に移動して基板５の表
面がエツチングされる。そして、Ｇａ源３がＧ ａ Ａ
ｓ膜で完全に覆われると、ＧａＡｓとＨＣＱが反応し
てＧａＣＱとＡｓ４が生成され、これが下流の基板５に
供給され、基板５の表面にてＧ ａ Ａ ｓが析出し、
Ｇ ａ Ａ ｓ Ｍが成長する。このとき、Ｂ系統から
供給されるＡ ｓ Ｃｎ ３＋ Ｈ２ガスは、成長され
るバッファ層の８１の取り込みを抑制するように作用す
る。Next, from time T2, A s
Supply N2 gas containing CQ3. Then, first, in parts 1 to 4, As 4 melts into Ga to the solubility limit and Ga As crust is generated, and the HCQ generated at this time moves downstream and the surface of substrate 5 is Etched. Then, Ga source 3 is Ga A
When completely covered with the S film, GaAs and HCQ react to generate GaCQ and As4, which are supplied to the downstream substrate 5, and GaAs is precipitated on the surface of the substrate 5.
G a A s M grows. At this time, the A s Cn 3+ H2 gas supplied from the B system acts to suppress the incorporation of 81 into the grown buffer layer.
バッファ層が所定の厚さまで成長すると、時刻Ｔ３でＢ
系統の供給ガスをＮ２に切換え、Ａ系統からはドーピン
グガスとして５ｉＨ４（水素稀釈］Ｏｐｐｍ）を供給し
始め、不純物をドーピングしながら基板５上にＧ ａ
Ａ ｓ活性層を所望の膜厚よりも後にエツチング除去す
る分だけ厚くエピタキシヤル成長させる。この際、Ｂ系
統から供給されるＮ２は、Ｓｉの取り込みを一定にする
作用をなす。When the buffer layer grows to a predetermined thickness, B
The supply gas of the system was switched to N2, and 5iH4 (hydrogen dilution Oppm) was started to be supplied as a doping gas from the A system, and Ga was applied onto the substrate 5 while doping impurities.
The As active layer is epitaxially grown to a thickness that is etched away after the desired thickness. At this time, N2 supplied from the B system acts to keep the Si uptake constant.
次に、時刻Ｔ４でＡ系統のドーピングガス（Ｓｊ、Ｈ，
）の供給を停止するとともに、Ｃ系統の供給ガス髪エピ
タキシャル成長用ガス（ＡｓＣＱ３＋Ｈ２）からＮ２ガ
スに切換え、Ｂ系統からはＮ２ガスの代わりにＡｓＣＱ
３＋Ｈ，の混合ガスを供給し始め、熱分解によって得ら
れたＨＣＱで基板５上に形成したエピタキシャル成長膜
の表面のエツチングを開始する。ただし、ドーピング停
止後。Next, at time T4, the A-system doping gas (Sj, H,
) and switched from the hair epitaxial growth gas (AsCQ3+H2) of the C system to N2 gas, and from the B system, AsCQ was used instead of N2 gas.
A mixed gas of 3+H is started to be supplied, and etching of the surface of the epitaxially grown film formed on the substrate 5 is started using HCQ obtained by thermal decomposition. However, after doping stops.
Ｂ系統の供給ガスを直ちにＮ２ガスからＡ ｓ ＣＱ＋
８２に切り替える代わりに、しばらく （数秒間）Ｂ系
統からＮ２ガスを流し続け、時刻Ｔ、、でＮ２ガスをＡ
ｓＣＱ＋Ｈ２の混合ガスに切り替えるようにしてもよい
。Immediately change the supply gas of B system from N2 gas to A s CQ+
Instead of switching to 82, continue to flow N2 gas from line B for a while (several seconds), and then switch to A at time T.
It is also possible to switch to a mixed gas of sCQ+H2.
その後、時刻Ｔｒ、でＢ系統の供給ガスをＮ２に切換え
、反応管１内のエツチング用ガスをＮ２で置換し、時刻
Ｔ７で電気炉２を反応管１の軸方向上流側（第２図にお
いて左側）に移動させ、室温で急冷を行なう。そして、
時刻ＴＩ、でＢおよびＣ系統の供給ガスをＮ２に切換え
、反応管１内をＮ２で置換し、時刻Ｔ９でエピタキシャ
ル成長した基板５を取り出して終了する。Thereafter, at time Tr, the supply gas of the B system is switched to N2, the etching gas in the reaction tube 1 is replaced with N2, and at time T7, the electric furnace 2 is switched to the upstream side of the reaction tube 1 in the axial direction (in Fig. 2). left side) and rapidly cooled at room temperature. and,
At time TI, the supply gas of the B and C systems is switched to N2, the inside of the reaction tube 1 is replaced with N2, and the epitaxially grown substrate 5 is taken out at time T9, and the process ends.
なお、上記実施例においては、バブラ８ｂ、８Ｃの温度
を２０℃とした。In the above example, the temperature of the bubblers 8b and 8C was 20°C.
以上のようにして得られた気相エピタキシャル成長膜の
キャリヤ濃度分布をＣ−ｖ？ＦＩＩＩ定により測定した
。その結果を第４図に示す。第４図は、横軸にエピタキ
シャル成長膜の表面からの深さを、縦軸にキャリア濃度
をとったものである。同図から判るように、表面から０
．０５〜０．５μｍの深さにおいて、キャリア濃度は６
Ｘ １０１７■−３で一定しており、表面近傍でキャ
リア濃度が変化することはなかった。The carrier concentration distribution of the vapor phase epitaxially grown film obtained as described above is C-v? Measured by FIII method. The results are shown in FIG. In FIG. 4, the horizontal axis represents the depth from the surface of the epitaxially grown film, and the vertical axis represents the carrier concentration. As can be seen from the figure, 0 from the surface
．． At a depth of 0.05-0.5 μm, the carrier concentration is 6
X was constant at 1017■-3, and the carrier concentration did not change near the surface.
また、上記実施例では、時刻ＴＧでＢ系統の供給ガスを
Ｎ２に切換え、反応管１内のエツチング用ガスをＮ２で
置換し、時刻Ｔ７で反応管１から電気炉２を移動して室
温で急冷することとしたので、各成長毎に所定のエピタ
キシャル成長膜の厚さを再現性良く得ることができ、ま
た面内均一性も良好となった。Furthermore, in the above example, at time TG, the supply gas of the B system is switched to N2, the etching gas in the reaction tube 1 is replaced with N2, and at time T7, the electric furnace 2 is moved from the reaction tube 1 to leave it at room temperature. Since rapid cooling was used, it was possible to obtain a predetermined epitaxially grown film thickness for each growth with good reproducibility, and the in-plane uniformity was also good.
第５図は、エツチング時間（ＴＧ ’ｒ５）と面内均
一性との関係を検討したもので、横軸にウェハ（基板）
内の位置を、縦軸に膜厚分布（１／シート抵抗×１０３
）をとったものである。第５図において、各実線１］〜
１５はエツチング時間を異ならせたもので、実線１１は
エツチング時間２０秒、実線１２は３０秒、実線１３は
４０秒、実線１４は５０秒、実線１５は６０秒とした場
合である。シー１〜抵抗測定結果の平均値（Ω／口）は
、実線１１が９９．２、実線１２が１０．７６、実線１
３が１４１．５、実線１４が１９５．２、実線１５が２
７４．７であった。また、標準偏差／平均値（％）は、
実線１１が２．８、実線１２が３．０、実線１３が３．
１、実線１４が５．３、実線１５が１４．５であった。Figure 5 examines the relationship between etching time (TG'r5) and in-plane uniformity, with the horizontal axis representing the wafer (substrate).
Film thickness distribution (1/sheet resistance x 103
). In FIG. 5, each solid line 1]~
No. 15 shows the case where the etching time was changed; solid line 11 shows the case where the etching time is 20 seconds, solid line 12 is 30 seconds, solid line 13 is 40 seconds, solid line 14 is 50 seconds, and solid line 15 is 60 seconds. Sea 1 ~ The average value (Ω/mouth) of the resistance measurement results are 99.2 for solid line 11, 10.76 for solid line 12, and 10.76 for solid line 1.
3 is 141.5, solid line 14 is 195.2, solid line 15 is 2
It was 74.7. In addition, the standard deviation/average value (%) is
The solid line 11 is 2.8, the solid line 12 is 3.0, and the solid line 13 is 3.
1, solid line 14 was 5.3, and solid line 15 was 14.5.
エツチング時間が６０秒以上になると膜厚分布のばらつ
きが大きくなり、１０秒以下ではエツチングの効果が現
われないので、エツチング時間としては１０秒を超え６
０秒未満、好ましくは２０秒以上５０秒以下の範囲で選
ばれる。対応するエツチングの厚みは０゜０５μｍを超
え０．３０μｍ未満、好ましくは０゜１ｃμｍ以上０．
２５μｍ以下である。If the etching time exceeds 60 seconds, the variation in the film thickness distribution will increase, and if the etching time is less than 10 seconds, the etching effect will not appear.
The time is selected to be less than 0 seconds, preferably in the range of 20 seconds or more and 50 seconds or less. The thickness of the corresponding etching is more than 0.05 μm and less than 0.30 μm, preferably more than 0.1 cm μm and 0.05 μm.
It is 25 μm or less.
なお、前記実施例においては、エツチングガスとしてＡ
Ｓ ＣＱ ３ ＋ Ｈ２の混合ガスを用いたが、本発
明はかかる実施例に限定されるものではなく、例えばＡ
ｓ ＣＱ３の代わりにＨＣＱおよびＡｓ分圧付与のた
めのＡ ｓ Ｈ３を含む気体を用いてもよく、エピタキ
シャル成長膜表面をエツチングできるものであればガス
に限らず、エツチング液、機械研磨、電解研磨などでも
よい。In the above embodiment, A is used as the etching gas.
Although a mixed gas of S CQ 3 + H2 was used, the present invention is not limited to such an example.
Instead of s CQ3, a gas containing HCQ and As H3 for imparting an As partial pressure may be used, and it is not limited to gases as long as the surface of the epitaxially grown film can be etched, such as etching liquid, mechanical polishing, electrolytic polishing, etc. But that's fine.
また、本発明は、ＧａＡｓの気相エピタキシャル成長方
法にのみ適用されるものではなく、ＧａＰ、ＩｎＰ、Ｉ
ｎＡｓ等の気相エピタキシャル成長方法にも適用できる
ことは勿論である。Furthermore, the present invention is not only applicable to the vapor phase epitaxial growth method of GaAs, but also applies to GaP, InP, I
Of course, it can also be applied to vapor phase epitaxial growth methods such as nAs.
［発明の効果］
以上のように、本発明のｍ−ｖ族化合物半導体の気相エ
ピタキシャル成長方法によれば、反応管内にエピタキシ
ャル成長用ガスとドーピングガスを供給して、基板上に
ｍ−ｖ族化合物半導体層を所定の膜厚より厚く成長させ
た後、基板上に形成したエピタキシャル成長膜の表面を
所定の膜厚までエツチングすることとしたので、膜厚方
向全体にわたり均一なキャリア濃度を有するエピタキシ
ャル成長膜を得ることができる。[Effects of the Invention] As described above, according to the vapor phase epitaxial growth method of an m-v group compound semiconductor of the present invention, an epitaxial growth gas and a doping gas are supplied into a reaction tube, and an m-v group compound semiconductor is grown on a substrate. After growing the semiconductor layer to a thickness greater than a predetermined thickness, the surface of the epitaxially grown film formed on the substrate is etched to a predetermined thickness, so that an epitaxially grown film having a uniform carrier concentration throughout the film thickness can be obtained. Obtainable.
第１図は本発明に係るＩＩＩ −Ｖ族化合物半導体の気
相エピタキシャル成長方法の一実施例におけるガス制御
タイミング図、
第２図は本発明の一実施例に用いた気相成長装置を示す
縦断正面図、
第３図は本発明の一実施例における反応管内の温度分布
を示すグラフ、
第４図は本発明の一実施例で得たエピタキシャル成長膜
のキャリア濃度分布を示すグラフ、第５図はエツチング
時間を変化させた場合のエピタキシャル成長膜の膜厚分
布を示すグラフ、第６図は従来のｍ−ｖ族化合物半導体
の気相エピタキシャル成長方法で用いた気相成長装置を
示す縦断正面図である。
１・・・・反応管、２・・・・電気炉、３・・・・Ｇａ
源、４・・・・原料ボート、５・・・・基板、６，６ａ
、６ｂ、６ｃ・・・・ガス導入管、８ｂ、８ｃ・・・・
バブ第
図
深
第
図
うエノ＼内Ｃ）４に苦巨
手続補正書
（自発）
１、事件の表示
昭和６３年特許願第２９４３４５号
２、発明の名称
■−■族化合物半導体のエピタキシャル成長方法３、補
正をする者
事件との関係FIG. 1 is a gas control timing diagram in one embodiment of the vapor phase epitaxial growth method for III-V group compound semiconductors according to the present invention. FIG. 2 is a vertical cross-sectional front view showing a vapor phase growth apparatus used in one embodiment of the present invention. Figure 3 is a graph showing the temperature distribution inside the reaction tube in an example of the present invention, Figure 4 is a graph showing the carrier concentration distribution of an epitaxially grown film obtained in an example of the present invention, and Figure 5 is a graph showing the carrier concentration distribution in the epitaxially grown film obtained in an example of the present invention. FIG. 6 is a graph showing the film thickness distribution of an epitaxially grown film as time is changed. FIG. 6 is a longitudinal sectional front view showing a vapor phase growth apparatus used in a conventional vapor phase epitaxial growth method for m-v group compound semiconductors. 1...Reaction tube, 2...Electric furnace, 3...Ga
Source, 4... Raw material boat, 5... Substrate, 6, 6a
, 6b, 6c...Gas introduction pipe, 8b, 8c...
1. Indication of the case Patent Application No. 294345 filed in 1988 2. Title of the invention ■-■ Epitaxial growth method for group compound semiconductors 3 , relationship with the person making the amendment
Claims (1)
エピタキシャル成長用ガスとドーピングガスとを供給し
て、上記半導体基板上に不純物をドーピングしたIII−
Ｖ族化合物半導体膜を気相成長させるIII−Ｖ族化合物
半導体の気相エピタキシャル成長方法において、エピタ
キシャル成長膜が所望の膜厚より厚く成長した後、基板
上に形成したエピタキシャル成長膜の表面を所望の膜厚
までエッチングすることを特徴とするIII−Ｖ族化合物
半導体の気相エピタキシャル成長方法。(1) Epitaxial growth gas and doping gas are supplied into a reaction tube containing a group III raw material and a semiconductor substrate, and the semiconductor substrate is doped with impurities.
In a method for vapor phase epitaxial growth of a III-V compound semiconductor in which a group V compound semiconductor film is grown in a vapor phase, after the epitaxially grown film has grown thicker than the desired thickness, the surface of the epitaxially grown film formed on the substrate is grown to the desired thickness. 1. A method for vapor phase epitaxial growth of III-V compound semiconductors, characterized by etching up to
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63294345A JP2753523B2 (en) | 1988-11-21 | 1988-11-21 | (III) -Epitaxial growth method of group V compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63294345A JP2753523B2 (en) | 1988-11-21 | 1988-11-21 | (III) -Epitaxial growth method of group V compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02141497A true JPH02141497A (en) | 1990-05-30 |
| JP2753523B2 JP2753523B2 (en) | 1998-05-20 |
Family
ID=17806505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63294345A Expired - Lifetime JP2753523B2 (en) | 1988-11-21 | 1988-11-21 | (III) -Epitaxial growth method of group V compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2753523B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5924224A (en) * | 1997-03-20 | 1999-07-20 | Rowenta-Werke Gmbh | Steam iron with anti-drip device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627700A (en) * | 1985-07-03 | 1987-01-14 | Nec Corp | Vapor phase epitaxial growth method for compound semiconductor |
| JPS6235577A (en) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1988
- 1988-11-21 JP JP63294345A patent/JP2753523B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627700A (en) * | 1985-07-03 | 1987-01-14 | Nec Corp | Vapor phase epitaxial growth method for compound semiconductor |
| JPS6235577A (en) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5924224A (en) * | 1997-03-20 | 1999-07-20 | Rowenta-Werke Gmbh | Steam iron with anti-drip device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2753523B2 (en) | 1998-05-20 |
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