JPH02140918A - Continuation type vapor growth device - Google Patents

Abstract

PURPOSE:To shut off gas between zones securely by arraying zones for treating process of epitaxial growth and moving a wafer in step feed at least between zones. CONSTITUTION:The size of each zone Z1-Z10 is determined so that a wafer carrying unit exceeding the interger which is greater than the value obtained by dividing the treatment time by a specified time unit can be stored. Thus, the zone Z1-Z10 are controlled under specific treatment conditions and a wafer 33 is step-carried and continuously treated in a relatively short time period determined in reference to the common divisor of treatment times in the zones Z1-Z10. Thus, gas sealing at the entrance, exit, and partitions between zones at a treatment room can be made more securely and the wafer 33 can be carried more continuously.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a refined vapor phase growth apparatus for epitaxially growing a wafer, and particularly to a continuous type apparatus.

(Prior Art and Problems to be Solved by the Invention) Conventionally, as vapor phase growth apparatuses for epitaxial growth, apparatuses called vertical type, horizontal type, and barrel type have been put into practical use. However, all of these devices are of the Bavchi type, and in order to increase productivity, it is necessary to increase the size of the device. In recent years, there has been a noticeable trend toward larger diameter wafers, and for this reason, there is an increasing demand for larger equipment. The size of the susceptor, which serves as the entire substrate, and the bell jar made of quartz, which forms the entire reaction chamber, must be increased in size. It is difficult to increase the size of the Furthermore, as another method of increasing productivity, continuous processing has been considered, and various continuous devices have been proposed. One continuous method is to set the wafer on a continuously running conveyor or the like and pass it through a processing chamber, but this continuous running method cannot completely seal the gas.

This problem is caused by explosive N2 gas and highly toxic B2H6 (
diborane), PH3+phosphine], and the more corrosive 8rC14 (silicon tetrachloride), 81H4
This is important in epitaxial growth using gases such as (monosilane). In addition, as another continuous method,
There are a total of three partitionable zones: a processing fund epitaxial growth zone, and zones for loading, unloading, and auxiliary processing before and after the zone, and wafers are sent to each zone for processing.

This has the disadvantage that the wafer transport interval is determined by the epitaxial growth step, which takes the longest processing time, so that the effect of improving productivity cannot be sufficiently achieved.

The present invention makes it possible to relatively shorten the total time interval between loading and unloading wafers, thereby increasing productivity, and at the same time, making it possible to connect processes before and after vapor phase growth, and furthermore, to provide a series of processing consisting of a relatively large number of steps. Our objective is to provide a complete continuous vapor phase growth apparatus that can perform gold deposition accurately.

[Structure of the invention]

(Means for Solving the Problems) The present invention improves the type and flow rate of gases necessary for vapor phase growth, wafer heating temperature, etc., such as purge gas such as N21 N2 gas, etching gas for purifying the wafer surface, and reaction gas. A continuous processing chamber in which one zone is formed each time the processing conditions change and these zones are sequentially arranged according to the processing sequence, and gas supply/exhaust means and heating means provided corresponding to the processing conditions of each zone. and a transport means for passing the wafer between each zone by step feeding based on a predetermined time unit in a predetermined transport unit,
The size of each zone is determined to be able to accommodate a number of wafer transport units X equal to or larger than the large integer value obtained by dividing the processing time there by the predetermined time unit.

Note that it is preferable that the entrance and exit of the processing chamber can be closed with single or double movable shutters, and zones within the processing chamber can also be partitioned with movable shutters. Additionally, the transport means can be driven independently for each zone↓
It is better to do so.

(Operation) Each zone is controlled to a predetermined processing condition, and wafers are carried stepwise at relatively short time intervals determined based on a common divisor of processing times in each zone to perform continuous processing. Since the process is carried out in steps, gas sealing between the entrance and exit of the processing chamber and between the zones is ensured, and the wafer is transported almost completely continuously.

(Example) Hereinafter, FIGS. 1 to 3 showing an example of the present invention will be described. 1o is a continuous processing chamber, with 1st to 7th processing chambers.
It is constructed by airtightly connecting units 11 to 17. The space between each unit is partitioned off by movable shutters 21 to 26 provided on one of the units. Also, inside the third unit 13, a moving table 31, a susceptor 32, and a wafer 33, which will be described later, are installed.
A partition 27 having a fixed opening 27a of the minimum size necessary for passage of the transported object 30 consisting of a partition 27 and a movable shaft 28.
It is divided into three parts in the longitudinal direction by
Inside the unit 14 is a fixed opening 29 similar to the partition 27.
It is divided into two by a partition 29 having a.

Therefore, the continuous processing chamber 1o has the movable shutter 2.
21-2 by 1-26 and 2g and partition 27.29
It is divided into 10 zones indicated by 00. The inlet +OA and outlet 10B of the processing chamber 10 can be opened and closed by movable shutters 18 and 19. Each zone Z1 to Z10 is provided with gas inlets 41 to 50 and exhaust ports 51 to 60, respectively, so that nine types of gas are supplied from a gas supply unit (not shown) to each zone with controlled flow rates. It has become.

Heating means 63 to 68 using infrared lamps 61 are provided above the zones Z3 to Z8 of the processing chamber 10, and are configured to perform heating with intensity depending on each zone. Note that these heating means 63 to 68 may be other heating methods such as RF" coils.

In each zone Z1 to Z10 of the processing chamber IO, in front of the inlet +OA and after the outlet 10B, conveying means 71 to 82 consisting of a large number of rotating bodies 70 are provided. Each conveyance means 7
1 to 82 are respectively provided with motors 91 shown in the third white, and are started and stopped independently of each other. In addition, the conveyance means 77Vi, 77a, 77b, 77C
It is divided into three parts. The motor 91 has a gear 92.9
3 and all the rotating bodies 70 via rotation transmission mechanisms such as a tin rocket 94 and a chain 95. Note that all of the rotating bodies 70 may not be driven; for example, every other rotating body 70 may be driven, and the others may be simply supported rotatably.

Conveying means 73-78 for zones Z3-Z8 where heating and further etching and epitaxial growth are performed
The rotating body 70 ↓ and these zones Z3 to Z8
3-2q) 13-I 4.15 is quartz glass or heat-resistant and corrosion-resistant ceramics,
The rotating body 70 is made of Si3N4, etc., and the rotating body 70 has a third
As shown, the attachment to the process chamber 10 is supported by a sub-ferrofluidic sealed bearing 96.96. The magnetic fluid sealed bearing 96.degree. 96 and both ends of the rotating body 70 engaged therewith are designed to be cooled by cooling means (not shown).

Other zones Zl, Z2. Z9, ZIO, and the rotary bodies 70 of each conveyance means 71, 72, 79 to 82 outside the processing chamber 10, and the units 12, 1 forming these zones.
6.17 may be made of stainless steel, and the seals of the rotating body 70 provided in zones Zl, Z2, Z9, and ZlO may be O-ring seals.

As shown in FIG. 3, the rotating body 70 is formed with a small diameter at a portion that supports the movable table 31, and has a stepped portion 70a,
70a It is designed to guide the K-machining moving table 31.

The moving table 31t''t1 is made of quartz glass or heat-resistant and corrosion-resistant ceramics, and a susceptor 32 whose base material is carbon is placed thereon, and two sea urchins 33 are placed on the susceptor 32. There is.

The periphery of the processing chamber 10 is covered with a cover 100 as shown in FIGS. And the heating means 63-68 are cooled.

The processing in each zone z1 to ZIO of the processing chamber 10 corresponds to sequence planes 1 to 10 of the epitaxial growth process in Table 1, respectively.

The zone Z1 shown in Table 1 is a room in which an N2 gas atmosphere is created so as not to bring air into subsequent zones, and N2 gas is supplied from the gas inlet 41 and exhausted from the exhaust port 51.

Zone Z2 is a room for changing the atmosphere from N2 gas to N2 gas in order to form an atmosphere based on N2 gas in the subsequent zones, and supplies N2 gas from two gas inlets 42 and 42, and Exhaust air from port 52.

Zone Z3 is a zone where the wafer 33 is placed in a N2 gas atmosphere.
Heat up the wafer 33 to 50°C. N2 gas is supplied from the gas inlet 43 and exhausted from the exhaust port 53, and the output of the heating means 63 is controlled to heat the wafer 33 to 850°C with a predetermined temperature gradient. Raise the temperature to

Zone Z4 heats the wafer 33 to 210°C following the sea 73.
()leat LIIJ 2) Tomorrow, the atmosphere is the same as Sea 73, but heating means 64
The output is set and controlled so as to correspond to the above-mentioned 1210°C.

Zone Z5 is H for cleaning the surface of the wafer 33.
This is a room in which etching is performed using Ct gas, and HCt gas and N2 gas, which is a carrier gas, are supplied through the gas inlet 45 and exhausted through the exhaust port 45. Note that the heating means 65 maintains the temperature of the wafer 33 at 1210° C., which is the etching temperature.

Zone Z6 is a room in which HCt+H2 gas for etching is purged by an H2 barge to prepare for epitaxial growth, and N2 gas is supplied from the gas inlet 46 and exhausted from the exhaust port 56.

Note that the heating means 66 in this zone Z6 is designed to lower the temperature of the wafer 33 to 1180° C., which is the epitaxial growth temperature, and maintain it at this temperature.

5iCL4) and N2 gas as a carrier gas are supplied. Incidentally, the reaction gas (including carrier gas, the same applies hereafter) from the gas inlet 47.47 is passed through the mesh-shaped nozzle port 47 provided in the partition 29, as shown in the first factor L and FIG.
A is blown out into the zone in a substantially laminar flow. This reaction gas is exhausted from exhaust ports 57.57. Further, the heating means 67 in this zone z7 maintains the temperature of the wafer 33 within this zone at 180° C., which is the epitaxial growth temperature.

In zone zgh, the reaction gas is purged with N2 gas and the temperature of the wafer 33 is lowered to 900°C (Heat d
N2 gas is supplied from the gas inlet 48 and exhausted from the exhaust port 58, and the heating means 68 is set to lower the temperature of the heating means 68 to 900°C with a predetermined temperature gradient. and controlled.

Zone Z9 is a contiguous room of the H2 barge following zone Z8, and N2 gas is supplied from the gas inlet 49 and exhausted from the exhaust port 59. Note that since there is no heating means in this zone Z9, the wafer 33 is cooled by the 1-12 gas, and the temperature is lowered here to 200 to 300°C.

In zone ZIO, N2 gas in zone z9 is connected to processing chamber 10.
This is a room for N2 purging to prevent air from leaking outside and to prevent air from flowing into zone Z9. N2 gas is supplied through the gas inlet 50, and the gas is supplied through the exhaust port 60.
Exhaust from.

In the above process, each zone Z1 to ZIO corresponds to changes in the processing conditions of the epitaxial growth process.
1 to Z10 are each placed under a preset type of gas atmosphere, and their flow rates are also determined according to the processing conditions, and the degree of heating by the heating means 63 to 68 is also determined in each process. It is determined according to.

In addition, the processing time (retention time) in each of the zones z1 to Z10 is shown in the [time (ratio) column of Table 1.The numerical value in the "time (ratio)" column [1] actually corresponds to approximately 2 minutes.

Therefore, the length of each of the zones Z1 to ZIO is the m1
The system is designed to be able to accommodate the number of movable platforms 31 corresponding to the value listed in the "Time (ratio)" column of the table. Next, the operation of this device will be explained. The susceptor 32 is placed thereon and the moving table 31 is transferred onto the transport means 81 located in front of the entrance OA of the processing chamber 10. Sebuto Ueno 33.

A moving table 31 on which a wafer 33 is placed, that is, a transported object 30
Then, the movable shutter 18 of the entrance +OA is opened, and the movable shutter 18, which is sent into the zone 21 of the processing chamber 10 by operating the conveying means 81 and 71, is immediately closed. Elizone Z to open the movable shutter 18
When the movable shutter 18 is closed, the air that has entered the interior of the gas inlet 18 is absorbed by the N supplied from the gas inlet 41.
2 gas is exhausted from the exhaust port 51, and the inside of the zone 21 returns to the N2 gas atmosphere again.

Thus, mobile platform 3! When a predetermined time (time corresponding to the value "1" in the "Time (ratio)" column of Table 1) has elapsed after entering zone Z1, the movable shutter 21 between zones Z1 and Z2 opens and , the conveying means 71 and 72 operate to send the moving table 31 to the zone Z2.The movable shutter 21
By opening, zones Zl and Z2 are filled with N2 gas and N2 gas.
However, by closing the movable shutter 21 after conveyance, the zone Z1 returns to the N2 gas atmosphere a little later, similar to when the movable shutter 18 is opened, and the zone Z2 becomes a mixed atmosphere of N2 gas. N2 gas is supplied from the inlet 42 and exhausted from the exhaust port 52. After a while, the atmosphere returns to the N2 gas atmosphere.

Then, open the movable shaft 18 of the entrance + OA again,
The next conveyed object 30 is transferred into the zone 21.

After a predetermined period of time has elapsed after the first conveyed object 30 is transferred from zone Z1 to Zone Z2, the movable shutter 22 is opened and the object 30 is transferred to Zone Z3. This zone z
3 has the same N2 gas atmosphere as zone Z2, so opening the movable shutter 22 does not change the atmosphere.

The wafer 33 that has entered the zone z3 is heated by the heating means 63. Which zone Z3 is formed to have a length that accommodates three transported objects 30, and
0 sequentially moves one space within the zone 21 every time a predetermined period of time elapses. So, sea urchin...33 is in zone 2.
The time spent in the chamber is three times the predetermined time unit, and the temperature is increased to 850° C. over this time. In other words, by controlling the output of the heating means 63, the temperature of the Weno S33 is raised to 850°C with a predetermined temperature gradient. Furthermore, as the first conveyed object 30 is fed by the II'jth step, a new The conveyed object 30 is then fed in. This situation is shown in the fourth factor. In Figure 4,
30a, 30b, 30C# 30d indicates objects to be conveyed sequentially, t is a time corresponding to a predetermined time unit, and S is a zone where the preceding object is located, or a zone where the preceding object is transferred from a predetermined position within the zone. This is the waiting time until the following conveyed object is transferred to the zone or a predetermined position within the zone.As mentioned above, this waiting time S is the waiting time when the movable shutters 21, 22... When the target opens and closes, the atmosphere in the previous zone returns to its original state. As is clear from this fourth factor, each of the transported objects 30a, 30b, 30
c.

30d are sequentially fed in steps at predetermined time intervals, and the transfer time interval for each conveyed object is (10 seconds).

Wafer 33 heated to 850°C in zone Z3
is sent to zone Z4 through the fixed opening 27a. The wafer 33 sent to this zone Z4 stays there for twice the predetermined time unit (2t), and during this time is heated to 1210° C. by the heating means 64.

The friend wafer 33 heated to 1210° C. is transferred to zone Z5 using the movable platen south cover 28. This zone Z5 is supplied with HUL+H2 etching gas from the gas inlet 45, so the wafer 33 sent there
Clean the surface by etching. The wafer 33 is kept at a temperature of 1210° C. by the heating means 65, remains there for twice the predetermined time unit (2t), is etched by a sufficient amount, and is transferred to the next zone Z6.

This zone Z6 is an N2 gas atmosphere, and the heating means 66
is the temperature of the wafer 33, which is the epitaxial growth temperature 1
Change the temperature to 180°C. In this zone Z6, wafer 3
3 stays for a time (1) corresponding to a predetermined time unit and is sent to zone Z7 where the next epitaxial growth will be performed.

A reaction gas is blown into this zone z7 from a mesh-shaped jet port 47a, and the object 30 is moved to the center due to the cooperative operation of the conveying means 77a located in front and the following central conveying means 77b. It is placed at the right end position in FIG. 2 of the conveying means 77b. This is to ensure uniform contact of the reaction gas over the entire surface of the wafer 33. The wafer 33 placed on the central transport means 77b is maintained at 1180° C. by the heating means 67, and epitaxial growth is performed using a reactive gas. This sea urchin/S33 is
If the epitaxial layer of a predetermined thickness is formed by staying here for a time corresponding to five times the predetermined time unit (5t) by the intermittent operation of the central conveying means 77b, and the time (5t) is suitable, the central The wafer 33t is sent to the wafer 33t-zone Z8 by the cooperative operation of the transporting means 77b and the transporting means 77C located after it. The heating means 68 in zone Z8 is
3 with a predetermined temperature gradient,
The temperature is lowered to 900°C while time (2t) passes.

Furthermore, this zone Z8 acts as a l (2 barge) to prevent the reaction gas leaking from zone Z7 from flowing to zone Z9 on the outlet 10B side by temporarily opening the movable shutter 24.

The wafer 33 that has left zone z8 is sent to the next zone Z9. This zone z9 is the ninth zone that does not have a heating means, and the transported object 30 such as the wafer 33 is cooled by H2 gas supplied from the gas inlet 49 and exhausted from the exhaust port 59, and then transferred to the next zone Z10. will be moved to

In this zone Z10, a N2 purge is performed to prevent the H2 gas from flowing out from the outlet 10B, and the temperature of the transported object 30 such as the wafer 33 is lowered to approximately room temperature. This zone Z1
By opening the movable shutter 19, the wafer 33 in the wafer 33 is sent from the outlet 10B onto the transfer means 82 outside the processing chamber 10, and is then stored in the wafer cassette 104 in an unloading device (not shown).

After this first wafer 33, the processing time (
Since the wafers 33 are being processed while being step-fed one after another at intervals of time (t+s), nine wafers 33 that have been epitaxially grown are sent out one after another from the exit 10B of the processing chamber 10 at intervals of time (t-)-s). .

After unloading the wafer 33, the moving stage 31 and susceptor 32 are returned to the transport means 81 provided in front of the entrance 10A of the processing chamber 10 by a transport means (not shown), and the unprocessed wafer 33 is loaded again. and sent to the processing chamber 10.

Figure 145 shows a part of another embodiment of the present invention,
The length of each zone Z1 to Z10 (zone Z5 and subsequent zones are not shown) is twice that of the previous embodiment. In this example, 扛, Zl, Z3, Z5. The front movable shutter 1g, 22° 1.25 of the odd-numbered zone of Z9 and the movable shutter 19 of the exit B, and the movable shutter 19 of the exit B, Z2. Z6. Z8. zl
Movable shutters 2 + , 23 on the front side of even-numbered zones of o
．． The movable shutters are divided into two groups, 24 and 26, and the movable shutters are opened and closed alternately for each group.

The conveyed object 30 in this embodiment is transferred as follows. First, open the first group of movable shutters 18, 22, 28, etc., and open the zone Z1 from the entrance + OA.
From zone z2 to zone Z3, from even zone to odd zone, and from zone Z10 to exit 10B
The conveyed objects 30 are simultaneously transferred to the outside.

The first group of movable shutters 18 and the like are then closed, returning each zone 21 to Z10 to their respective gas atmospheres. Note that when a time (t/3) corresponding to '/3 of a predetermined time unit has elapsed after the conveyed object 30 is transferred to the odd-numbered zone, the movable shaft 21 etc. of the second group is opened and the conveyed object 30 is transferred to the odd-numbered zone ZZ3 etc. Object 3 that entered first
0 to even zone z2. Send it to z4 etc. At this time, a space is left in the even-numbered zone to receive one conveyed object 30 from the odd-numbered zone. In addition, an empty space capable of receiving one conveyed object 30 is created in the odd-numbered zone by means of this transfer.

After the transfer from the odd-numbered zone to the even-numbered zone, the time ('/
3), the movable shutters +8, 22, 28, etc. of the first group are opened again, and the conveyed object 30 is sent to the odd-numbered zone in the same manner as above.

Then, when a further time ('/3) has elapsed, that is, when the time (tJ) has elapsed since the transported object 30 was sent to the odd-numbered zone before this time, the movable shutters 21, etc. of the second group are opened. Rear conveyed object 3 in odd-numbered zone
Send 0 to the even zone.

FIG. 6 shows a timing chart of the transfer of the transported object 30 between zones and within the zone in this embodiment. Note that a, b, etc. in the figure indicate positions within each zone.

As is clear from the figure, in this embodiment, a wafer 33 is sent into the processing chamber 10 every 21/3 hours, and a wafer 33 that has been epitaxially grown is sent out from the exit 10B of the processing chamber 10 every 21/3 hours.

In this embodiment, the movable shaft 18 and the like are opened and closed in every other zone, and the movement of gas between zones is limited to only adjacent zones, for example, when H2 gas in zone Z2 passes through zone Z1. Therefore, there is no leakage to the outside from the inlet +OA, and conversely, no outside air flows into the zone Z2.

Although the above-mentioned embodiment shows an example in which the processing chamber 10 is formed horizontally, the present invention is not limited to this, but it is possible to move the conveyed object 30 in the vertical direction, or to arrange each zone in a zigzag pattern. Alternatively, the processing chamber 10 can be made into an annular shape and the inlet + OA and the outlet 10B are adjacent to each other, so that various changes can be made, such as the construction, and the length of each zone and the timing of transfer are not limited to the above-mentioned embodiments. It goes without saying that it can be done. In addition, the inlet 10A and the outlet 10 of the processing chamber 10
B and movable shafter I between zones with different atmospheres.
It is preferable to have a structure that reliably shuts off the flow except when transferring an edge to a gas curtain, etc., but it may also be shut off by using a gas curtain or the like. Furthermore, in order to avoid more complete contact between the H2 gas and the air, the inlet + OA of the processing chamber 10 and the outlet 10B
Zones Zl and ZIO which are in contact with may be arranged doubly with a movable shutter interposed therebetween. Furthermore, the conveyed object 30 is fed in steps between zones in order to easily interrupt the atmosphere between zones, but may be fed continuously within a zone.

Furthermore, the zone Z7 for performing epitaxial growth is divided into the front and rear zones z6. It is also possible to provide two rows of branches for z8, and use one when etching or maintenance is performed to clean the inside of the processing chamber of that part, and the other.

Furthermore, etching or the like is performed to clean the moving stage 31 and the susceptor 32 during the transport path of the moving stage 31 and the susceptor 32, which are taken out from the exit 10B of the processing chamber 10, loaded with the wafer 33, and then returned to the processing chamber 100 entrance + OA. do the
Furthermore, it is preferable to provide a processing chamber for coating the susceptor 32 with Si.

Furthermore, the moving table 31 and the susceptor 32 are moved to the exit 10.
If a processing chamber for performing the above-mentioned etching is provided on the way back from B to the entrance + OA, a new wafer 33 is carried onto the susceptor 32 in front of this processing chamber, and the wafer 33 is etched at the same time. , the zone z5 for the next ebbing described above is omitted, and the zone z4 before and after it is omitted.
, z6 from 850 tl: to 11g0°C.

〔Effect of the invention〕

As described above, the present invention arranges the next zones according to the epitaxial growth process and transports the wafer in steps at least between the zones. The atmosphere allows for quick and accurate wafer processing, which is determined by predetermined processing conditions, and because the time interval between wafer transfers is relatively short, it is possible to achieve continuity with previous and subsequent processes. It is easy to use, and has the advantage of greatly increasing productivity.

[Brief explanation of the drawing]

FIG. 1 is a schematic plan sectional view showing one embodiment of the present invention, m2
3 is a partially enlarged sectional view showing an example of the transfer means, FIG. 4 is a timing chart of wafer transfer in the embodiment shown in the first and second factors, and FIG. 5
This figure is a partially schematic plan sectional view showing another embodiment of the present invention, and the sixth factor is shown in FIG. 5, which is a timing chart for transporting sea urchins in the next embodiment. 10...Processing chamber, Z1-ZIO...Zone, 1g, l'? , 21-26, 28... Movable shutter, 27a, 2'? a...Fixed opening, 30...Transferred object, 33...Feno・41-50
...Gas inlet, 51-60...Exhaust port, 63-68...Heating means, 71-82...Transporting means, 96...Magnetic fluid seal bearing.

Claims (1)

[Claims] 1. A continuous type in which one zone is formed each time the processing conditions such as the type and flow rate of gas required for vapor phase growth and the wafer heating temperature change, and these zones are sequentially arranged according to the processing sequence. a processing chamber, a gas supply/exhaust means and a heating means provided corresponding to the processing conditions of each zone, and the wafer is passed between each zone by step feeding based on a predetermined time unit in a predetermined transport unit. and a transport means, each zone having a size determined to be capable of accommodating a number of wafer transport units or more corresponding to an integer larger than the value obtained by dividing the processing time there by the predetermined time unit. Continuous vapor phase growth equipment. 2. Claim 1, characterized in that the inlet and outlet of the processing chamber are closed by movable shutters.
Continuous vapor phase growth apparatus described in Section 1. 3. The continuous vapor phase growth apparatus according to claim 1 or 2, wherein the conveying means is configured to be driven independently for each zone. 4. Claim 3, characterized in that the zones are partitioned by movable shutters.
Continuous vapor phase growth apparatus described in Section 1. 5. The continuous vapor phase growth apparatus according to claim 4, characterized in that the zones in contact with the inlet and outlet of the processing chamber are arranged in duplicate with a movable shutter interposed therebetween.