JPH02139965A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH02139965A
JPH02139965A JP63293257A JP29325788A JPH02139965A JP H02139965 A JPH02139965 A JP H02139965A JP 63293257 A JP63293257 A JP 63293257A JP 29325788 A JP29325788 A JP 29325788A JP H02139965 A JPH02139965 A JP H02139965A
Authority
JP
Japan
Prior art keywords
type
insulating films
sidewall insulating
formed
type mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63293257A
Inventor
Kunihiro Takahashi
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Priority to JP63293257A priority Critical patent/JPH02139965A/en
Publication of JPH02139965A publication Critical patent/JPH02139965A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent the deterioration of characteristics of a transistor by forming P-type and N-type MOS transistors so that their sidewall insulating films may be different in width.
CONSTITUTION: As to a silicon oxide film 16 which is formed with vapor growth in order to form sidewall insulating films, a region where a P-type transistor is formed is covered with a photoresist 17 and the silicon oxide film 16 is etched with a reactive ion etching process and further, removal of the resist 17 allows the sidewall insulating films 19 to be formed on both side faces of a gate electrode 13 in an N-type MOS transistor and the films 19 are covered with a resist 110. The silicon oxide film 16 which still remains on an N-type well is removed with the reactive ion etching process to form the sidewall insulating films on both sides of a gate electrode in a P-type MOS transistor. The sidewall insulating films in N-type and P-type MOS transistors are formed into different sizes W1 and W2 in width; however, W2 gets larger than W1.
COPYRIGHT: (C)1990,JPO&Japio
JP63293257A 1988-11-18 1988-11-18 Manufacture of semiconductor device Pending JPH02139965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63293257A JPH02139965A (en) 1988-11-18 1988-11-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63293257A JPH02139965A (en) 1988-11-18 1988-11-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02139965A true JPH02139965A (en) 1990-05-29

Family

ID=17792486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63293257A Pending JPH02139965A (en) 1988-11-18 1988-11-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02139965A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332123A (en) * 2005-05-23 2006-12-07 Toshiba Corp Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332123A (en) * 2005-05-23 2006-12-07 Toshiba Corp Manufacturing method of semiconductor device

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