JPH02137252A - Lead frame for semiconductor device - Google Patents

Lead frame for semiconductor device

Info

Publication number
JPH02137252A
JPH02137252A JP29138288A JP29138288A JPH02137252A JP H02137252 A JPH02137252 A JP H02137252A JP 29138288 A JP29138288 A JP 29138288A JP 29138288 A JP29138288 A JP 29138288A JP H02137252 A JPH02137252 A JP H02137252A
Authority
JP
Japan
Prior art keywords
lead frame
frame
socket
lead
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29138288A
Other languages
Japanese (ja)
Other versions
JP2693797B2 (en
Inventor
Takeshi Haga
剛 芳賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP63291382A priority Critical patent/JP2693797B2/en
Publication of JPH02137252A publication Critical patent/JPH02137252A/en
Application granted granted Critical
Publication of JP2693797B2 publication Critical patent/JP2693797B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the bending of a lead at the time of burn-in test by providing a linkage frame with notches so as to correspond with separating frames to divide a device into individual sections. CONSTITUTION:Stress at the time of resin sealing is absorbed by slits 15 arranged in separating frames 17. W-shaped notches 18 are formed at parts of linkage frames 16-1, 16-2 which correspond with the separating frames 17. When a device is mounted on a socket for a lead frame use, and subjected to BT test, stress is applied in the longitudinal direction of the lead frame by the difference of thermal expansion between the lead frame and the socket. This stress is absorbed by the deformation of portional put between the slits 15 and the notches 18. Thereby, the positional deviation between the socket and a package is not caused, so that the deformation of the lead can be prevented.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置用リードフレームに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to lead frames for semiconductor devices.

〔従来の技術〕[Conventional technology]

従来の半導体装置用リードフレームは第3図に示す様に
連結枠6−1.6.−2はその外辺が直線状であり幅も
一定となっている。
A conventional lead frame for a semiconductor device has a connecting frame 6-1.6 as shown in FIG. -2 has a straight outer edge and a constant width.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置用リードフレームは連結枠の
幅が一定であるため、半導体装置の製造工程において、
半導体チップを搭載しパッケージに封入し個別に切り離
す前の状態で、リードフレーム用ソケットに常温で組み
込み後、BT槽内で高温下に晒されるが、そのときソケ
ットとリードフレームの熱膨張量が異なる為に、特にリ
ード間ピッチの狭いリードフレームではリードが曲がっ
てしまうという欠点がある。
In the conventional lead frame for semiconductor devices described above, the width of the connection frame is constant, so in the manufacturing process of semiconductor devices,
After mounting a semiconductor chip and enclosing it in a package before separating it individually, it is assembled into a lead frame socket at room temperature and then exposed to high temperatures in a BT bath, but at that time the amount of thermal expansion between the socket and lead frame is different. Therefore, there is a drawback that the leads may be bent, especially in a lead frame with a narrow pitch between the leads.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置用リードフレームは、各こまに区切
る仕切り枠に対応して、連結枠に切り欠きが設けられて
いるというものである。
In the lead frame for a semiconductor device of the present invention, a notch is provided in the connecting frame corresponding to the partition frame dividing each frame.

〔実施例〕〔Example〕

次に本発明について1面を参照して説明する。 Next, the present invention will be explained with reference to the first page.

第1図は本発明の一実施例を示す平面図で、リードフレ
ームに半導体チップを搭載し、パッケージに封入し、タ
イバー(図示しない)を切り離した状態を示している。
FIG. 1 is a plan view showing an embodiment of the present invention, in which a semiconductor chip is mounted on a lead frame, enclosed in a package, and a tie bar (not shown) is cut away.

15は仕切り枠17に設けられたスリットで樹脂封入時
の歪を吸収する。連結枠16−1.16−2の仕切り枠
に対応する部分にはW字形の切り欠き18が設けられて
いる。
Reference numeral 15 denotes a slit provided in the partition frame 17 to absorb distortion during resin filling. A W-shaped notch 18 is provided in a portion of the connecting frame 16-1 and 16-2 that corresponds to the partition frame.

リードフレーム用ソケットに取り付けてBT試験を行な
う時、リードフレームとソケットの熱膨張差によりX方
向(リードフレームの長手方向)にストレスが加わるが
、スリット15と切り欠き18で挟まれた部分の変形で
吸収されるのでソケットとパッケージとの位置ずれは生
じないのでリードの変形は防止される。
When performing a BT test by attaching it to a lead frame socket, stress is applied in the X direction (longitudinal direction of the lead frame) due to the difference in thermal expansion between the lead frame and the socket, but the portion sandwiched between the slit 15 and the notch 18 is deformed. Since the deformation of the leads is prevented, there is no misalignment between the socket and the package.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に本発明は、リードフレームの連結枠に
熱膨張差吸収用の切り欠きを設けであるので、リードフ
レーム状態におけるバーンインテスト時に、リードの曲
りを防止出来、半導体装置の保留りが向上する効果があ
る。
As explained above, in the present invention, since the connecting frame of the lead frame is provided with a cutout for absorbing the difference in thermal expansion, bending of the leads can be prevented during a burn-in test in the lead frame state, and the retention of semiconductor devices can be prevented. It has an improving effect.

5.15・・・スリット、6 1.16−2・・・連結枠、7 18・・・切り欠き。5.15...Slit, 6 1.16-2...Connection frame, 7 18...notch.

、  6−2. 16− 17・・・仕切り枠、, 6-2. 16- 17... Partition frame,

Claims (1)

【特許請求の範囲】[Claims] 各こまに区切る仕切り枠に対応して、連結枠に切り欠き
が設けられていることを特徴とする半導体装置用リード
フレーム。
A lead frame for a semiconductor device, characterized in that a connecting frame is provided with a notch corresponding to a partition frame dividing each frame.
JP63291382A 1988-11-17 1988-11-17 Lead frame for semiconductor device Expired - Lifetime JP2693797B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63291382A JP2693797B2 (en) 1988-11-17 1988-11-17 Lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63291382A JP2693797B2 (en) 1988-11-17 1988-11-17 Lead frame for semiconductor device

Publications (2)

Publication Number Publication Date
JPH02137252A true JPH02137252A (en) 1990-05-25
JP2693797B2 JP2693797B2 (en) 1997-12-24

Family

ID=17768196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63291382A Expired - Lifetime JP2693797B2 (en) 1988-11-17 1988-11-17 Lead frame for semiconductor device

Country Status (1)

Country Link
JP (1) JP2693797B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19600393A1 (en) * 1995-02-02 1996-08-08 Mitsubishi Electric Corp Heat deformation absorbent conductive frame for semiconductor device
WO2007079122A2 (en) * 2005-12-29 2007-07-12 Sandisk Corporation Strip for integrated circuit packages having a maximized usable area

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103849U (en) * 1983-12-21 1985-07-15 新日本無線株式会社 Multiple lead frame
JPS6171655A (en) * 1984-09-17 1986-04-12 Rohm Co Ltd Lead frame
JPS61104650A (en) * 1984-10-29 1986-05-22 Rohm Co Ltd Lead frame

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103849U (en) * 1983-12-21 1985-07-15 新日本無線株式会社 Multiple lead frame
JPS6171655A (en) * 1984-09-17 1986-04-12 Rohm Co Ltd Lead frame
JPS61104650A (en) * 1984-10-29 1986-05-22 Rohm Co Ltd Lead frame

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19600393A1 (en) * 1995-02-02 1996-08-08 Mitsubishi Electric Corp Heat deformation absorbent conductive frame for semiconductor device
US5793100A (en) * 1995-02-02 1998-08-11 Mitsubishi Denki Kabushiki Kaisha Lead frame for semiconductor device
DE19600393B4 (en) * 1995-02-02 2007-08-23 Mitsubishi Denki K.K. leadframe
WO2007079122A2 (en) * 2005-12-29 2007-07-12 Sandisk Corporation Strip for integrated circuit packages having a maximized usable area
WO2007079122A3 (en) * 2005-12-29 2007-09-07 Sandisk Corp Strip for integrated circuit packages having a maximized usable area
KR101015267B1 (en) * 2005-12-29 2011-02-18 샌디스크 코포레이션 Strip for integrated circuit packages having a maximized usable area

Also Published As

Publication number Publication date
JP2693797B2 (en) 1997-12-24

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