JPH02135695A - Manufacture of electroluminescence display device - Google Patents
Manufacture of electroluminescence display deviceInfo
- Publication number
- JPH02135695A JPH02135695A JP63287404A JP28740488A JPH02135695A JP H02135695 A JPH02135695 A JP H02135695A JP 63287404 A JP63287404 A JP 63287404A JP 28740488 A JP28740488 A JP 28740488A JP H02135695 A JPH02135695 A JP H02135695A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting layer
- transparent electrode
- vacuum
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005401 electroluminescence Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 9
- 238000007789 sealing Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 5
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 4
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セラミック基板を用いたエレクトロルミネセ
ンス表示素子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing an electroluminescent display element using a ceramic substrate.
（従来の技術）
エレクトロルミネセンス表示素子は、アルミナを主成分
とした基板セラミック上に設けられた銀、パラジウム等
の内部電極と、この内部電極の上に積層し焼成された強
誘電体セラミックと、この強誘電体セラミックの上に成
膜された硫化亜鉛、硫化カルシウム等のＩ Ｉ−Ｖｌ族
材料を母体とし遷移金属、稀土類元素のＭｎ、Ｔｂ等を
発光中心として０．１〜６．０重量％混入した発光層と
、この発光層上に設けられたインジウム、錫等の酸化物
の透明電極とから成っている。セラミック基板の比誘電
率は１０００以上と非常に大きいため、絶縁層で消費さ
れる電圧が非常に小さく、約１００Ｖ程度の低電圧で駆
動することができ、またガラス基板型のものに比べて原
材料費が安く、高価な設備を必要とする薄膜工程が簡素
化されるので有利である。(Prior art) An electroluminescent display element consists of an internal electrode made of silver, palladium, etc. provided on a substrate ceramic mainly composed of alumina, and a ferroelectric ceramic laminated and fired on top of this internal electrode. , a film of 0.1-6. It consists of a light-emitting layer containing 0% by weight and a transparent electrode made of an oxide of indium, tin, etc. provided on the light-emitting layer. Ceramic substrates have a very high dielectric constant of over 1000, so the voltage consumed in the insulating layer is very low, and they can be driven at a low voltage of about 100V, and they require less raw material than glass substrate types. It is advantageous because it is inexpensive and simplifies thin film processes that require expensive equipment.
一方、ＭＩＳ型のエレクトロルミネセンス表示素子では
、所定パターンを有する透明電極が被覆された領域以外
ては薄膜の発光層が露出したままであり、また発光層の
材料である［Ｉ−Ｖｌ族の金属は耐湿性が低く、直ちに
劣化する欠点がある。特に、発光層を連続して長時間駆
動すると、電極パターンまで劣化が進行し、発光輝度も
低下する。また、所定パターンの透明電極を形成した後
、真空中に表示素子を對止すると、大気中にある場合よ
りも幾分劣化が少なくなるが、数１０時間で輝度の変化
が発生する。尚、内部電極に発光パターンを形成し、リ
ード電極を内部電極とスルーホールで接合するセグメン
トパターンのセラミック表示素子は、透明電極が一面に
形成されて共通電極として使用されるのでエツチング加
工は必要でなく、従って発光層が構造上大気に露出する
ことがないが、透明電極だけでは透湿し同様に劣化が生
ずる。On the other hand, in MIS-type electroluminescent display elements, the thin film light-emitting layer remains exposed except for the area covered with the transparent electrode having a predetermined pattern, and the material of the light-emitting layer [I-Vl group] Metals have the disadvantage of having low moisture resistance and deteriorating quickly. In particular, if the light-emitting layer is continuously driven for a long time, the electrode pattern will deteriorate and the luminance will also decrease. Furthermore, if the display element is left in a vacuum after forming a transparent electrode in a predetermined pattern, the deterioration will be somewhat less than in the atmosphere, but a change in brightness will occur in several tens of hours. Note that segment pattern ceramic display elements, in which a light-emitting pattern is formed on the internal electrode and the lead electrode is connected to the internal electrode through a through hole, do not require etching because the transparent electrode is formed on one side and is used as a common electrode. Therefore, the light-emitting layer is not exposed to the atmosphere due to its structure, but if only the transparent electrode is used, moisture permeates through it and similarly causes deterioration.
（ｆｉＷＵを解決するための手段）
本発明は、上記の課題を解決するために、アルミナを主
成分とした基板セラミック上に設けられた銀、パラジウ
ム等の内部電極とこの内部電極の上に積層焼成された強
誘電体セラミックとこの強誘電体セラミックの上に成膜
された硫化亜鉛、硫化カルシウム等のＩｆ−Ｖｌ族材料
を母体とし遷移金属、稀土類元素のＭｎ、Ｔｂ等を発光
中心としてＯ，１〜６．０重量％混入した発光層とこの
発光層上に設けられたインジウム、錫等の酸化物の透明
電極とから成るエレクトロルミネセンス表示素子を製造
する方法において、発光層の成膜及び透明電極の成膜は
真空雰囲気中で連続して行ない、引き続いて真空雰囲気
中で２酸化硅素、酸窒化硅素等のパシベーション膜を成
膜し、その後大気中に素子を取り出すことを特徴とする
エレクトロルミネセンス表示素子の製造方法を提供する
ものである。(Means for solving fiWU) In order to solve the above problems, the present invention provides an internal electrode made of silver, palladium, etc. provided on a substrate ceramic mainly composed of alumina, and a layer laminated on this internal electrode. A fired ferroelectric ceramic and If-Vl group materials such as zinc sulfide and calcium sulfide deposited on the ferroelectric ceramic are used as a matrix, and transition metals and rare earth elements such as Mn and Tb are used as luminescent centers. In a method for manufacturing an electroluminescent display element comprising a light-emitting layer containing 1 to 6.0% by weight of O, and a transparent electrode of an oxide such as indium or tin provided on the light-emitting layer, the formation of the light-emitting layer is The film and transparent electrode are formed continuously in a vacuum atmosphere, and then a passivation film of silicon dioxide, silicon oxynitride, etc. is formed in the vacuum atmosphere, and then the device is taken out into the atmosphere. The present invention provides a method for manufacturing an electroluminescent display element.
（作用）
このように１発光層と透明電極を真空雰囲気中で成膜し
、また引き続いて真空雰囲気中で透明電極上に２酸化硅
素、酸窒化硅素等のパシベーション膜を形成した後、素
子を大気中に取り出すと、直接または透明電極を通して
の吸湿がないから発光層の劣化が生ずることがなく、寿
命を相当に延長することができる。(Function) After forming one light-emitting layer and a transparent electrode in a vacuum atmosphere and subsequently forming a passivation film of silicon dioxide, silicon oxynitride, etc. on the transparent electrode in a vacuum atmosphere, the device is assembled. When taken out into the atmosphere, there is no moisture absorption directly or through the transparent electrode, so the luminescent layer does not deteriorate, and its life can be considerably extended.
本発明の実施例を図面を参照して詳細にのべると、第１
図は本発明によって製造されるエレクトロルミネセンス
表示素子ｌＯを示し、図示の実施例ではＭＩＳ型のエレ
クトロルミネセンス表示素子ｌＯが示されている。この
エレクトロルミネセンス表示素子ｌＯは、アルミナを主
成分とした基板セラミック１２と、この基板セラミック
１２上に設けられた銀、パラジウム等の内部電極１４と
、この内部電極１４の上に積層焼成されたチタン酸鉛、
チタン酸ストロンチウム等のペロブスカイト系の結晶構
造を有する強誘電体セラミック１６と、この強誘電体セ
ラミック１６の上に成膜された硫化亜鉛、硫化カルシウ
ム等のＴＩ−Ｖｌ族材料を母体とし遷移金属、稀土類元
素のＭｎ、Ｔｂ、Ｅｕ等を発光中心として０．１〜６．
０重量％混入した発光層１８と、この発光層１８上に成
膜しエツチングして所定のパターンで設けられたインジ
ウム、錫等の酸化物の透明電極２０とから成っている。Embodiments of the present invention will be described in detail with reference to the drawings.
The figure shows an electroluminescent display element IO manufactured according to the invention, in the illustrated embodiment an electroluminescent display element IO of the MIS type. This electroluminescent display element 10 includes a ceramic substrate 12 mainly composed of alumina, an internal electrode 14 made of silver, palladium, etc. provided on the ceramic substrate 12, and a laminated and fired layer on the internal electrode 14. lead titanate,
A ferroelectric ceramic 16 having a perovskite crystal structure such as strontium titanate, and a TI-Vl group material such as zinc sulfide or calcium sulfide formed on the ferroelectric ceramic 16 as a matrix, and a transition metal, 0.1 to 6.0 with rare earth elements such as Mn, Tb, and Eu as the luminescent center.
It consists of a light-emitting layer 18 mixed with 0% by weight, and a transparent electrode 20 made of an oxide of indium, tin, etc., formed on the light-emitting layer 18 and provided in a predetermined pattern by etching.
強誘電体セラミック１６のグリーンシートは１０５０℃
で焼成し、また発光層１８は電子ビーム蒸着法、スパッ
タリング法、ＭＯ−ＣＶＤ法等によりて３０００人〜１
００００人の厚みに形成され、そのエツチングはプラズ
マエ→チング１反応性イオンビームエツチング、マグネ
トロンスパッタエツチング等によって行なわれる本発明
の方法では、第２図に示すように、発光層１Ｂの成膜及
び透明電極２０の成膜、エツチングは真空雰囲気中で連
続して行ない、引き続いて真空雰囲気中で２酸化硅素、
酸窒化硅素等のパシベーションｌ！Ｉ２２を成膜し、そ
の後このようにして形成された表示素子ｌＯを大気中に
取り出す、この場合、パシベーション膜２２は、スパッ
タリング法、ＥＣＲプラズマＣｖＤ法等によって厚さ約
ＩＪＬ［ＩＩ程度に形成されるこのように１発光層１８
の成膜と透明電極２０の成膜、エツチングとを真空雰囲
気中で行ない、また引き続いて真空雰囲気中で透明電極
１８と露出された発光！２０とを含む面に２酸化硅素、
酸窒化硅素等のパシベーション膜を形成すると、素子を
大気中に取り出した後でも発光層が劣化することがなく
、従って、その後樹脂または真空封止するための実装作
業等を発光層１８の劣化を起すことなく行なうことがで
きる尚、上記実施例ては、透明電極が所定のパターンを
有する場合についてのべたが、内部電極が発光パターン
を有し、透明電極が一面に設けられてエツチングが施さ
れない場合でも透明電極を通しての透湿を防止するため
に同様の処理をすることができる。The green sheet of ferroelectric ceramic 16 is 1050℃
The light-emitting layer 18 is baked by an electron beam evaporation method, a sputtering method, an MO-CVD method, etc.
In the method of the present invention, in which the film is formed to a thickness of 1,000 mm and the etching is performed by plasma etching, reactive ion beam etching, magnetron sputter etching, etc., as shown in FIG. The film formation and etching of the electrode 20 are carried out continuously in a vacuum atmosphere, and then silicon dioxide and etching are performed in a vacuum atmosphere.
Passivation of silicon oxynitride, etc.! The passivation film 22 is formed to a thickness of about IJL [II] by a sputtering method, an ECR plasma CVD method, etc. 1 light emitting layer 18 like this
The film formation and the film formation and etching of the transparent electrode 20 are performed in a vacuum atmosphere, and subsequently, the transparent electrode 18 and the exposed light emitting film are formed in a vacuum atmosphere. silicon dioxide on the surface containing 20,
If a passivation film such as silicon oxynitride is formed, the light-emitting layer will not deteriorate even after the device is taken out into the atmosphere. Therefore, subsequent mounting work for resin or vacuum sealing will be performed to prevent deterioration of the light-emitting layer 18. In the above embodiment, the case where the transparent electrode has a predetermined pattern has been described, but if the internal electrode has a light emitting pattern and the transparent electrode is provided on one side, etching is not performed. Similar treatment can be applied to prevent moisture permeation through the transparent electrode.
（発明の効果）
本発明によれば、上記のように１発光層の劣化が有効に
防止されるので長期に亙って安定した発光特性を維持し
、素子の寿命を相当に延長することができる。(Effects of the Invention) According to the present invention, since deterioration of one light emitting layer is effectively prevented as described above, stable light emitting characteristics can be maintained over a long period of time, and the life of the device can be considerably extended. can.
第１図は本発明の方法によって製造されたエレクトロル
ミネセンス表示素子の一部を破断した斜視図、第２図は
本発明の製造方法の系統図である。FIG. 1 is a partially cutaway perspective view of an electroluminescent display element manufactured by the method of the present invention, and FIG. 2 is a system diagram of the manufacturing method of the present invention.
Claims (1)
銀、パラジウム等の内部電極と前記内部電極の上に積層
焼成された強誘電体セラミックと前記強誘電体セラミッ
クの上に成膜された硫化亜鉛、硫化カルシウム等の［
I −Ｖ］族材料を母体とし遷移金属、稀土類元素のＭｎ
、Ｔｂ等を発光中心として０．１〜６．０重量％混入し
た発光層と前記発光層上に設けられたインジウム、錫等
の酸化物の透明電極とから成るエレクトロルミネセンス
表示素子を製造する方法において、前記発光層の成膜及
び透明電極の成膜は真空雰囲気中で連続して行ない、引
き続いて真空雰囲気中で２酸化硅素、酸窒化硅素等のパ
シベーション膜を成膜し、その後大気中に素子を取り出
すことを特徴とするエレクトロルミネセンス表示素子の
製造方法。An internal electrode made of silver, palladium, etc. provided on a substrate ceramic mainly composed of alumina, a ferroelectric ceramic laminated and fired on the internal electrode, and a zinc sulfide film formed on the ferroelectric ceramic. , calcium sulfide, etc.
Mn of transition metals and rare earth elements based on I-V] group materials
, manufacture an electroluminescent display element comprising a light-emitting layer containing 0.1 to 6.0% by weight of Tb or the like as a light-emitting center and a transparent electrode of an oxide such as indium or tin provided on the light-emitting layer. In the method, the formation of the light-emitting layer and the transparent electrode are performed successively in a vacuum atmosphere, and then a passivation film of silicon dioxide, silicon oxynitride, etc. is formed in the vacuum atmosphere, and then the film is exposed to air. 1. A method for manufacturing an electroluminescent display element, characterized by taking out the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63287404A JPH02135695A (en) | 1988-11-14 | 1988-11-14 | Manufacture of electroluminescence display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63287404A JPH02135695A (en) | 1988-11-14 | 1988-11-14 | Manufacture of electroluminescence display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02135695A true JPH02135695A (en) | 1990-05-24 |
Family
ID=17716900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63287404A Pending JPH02135695A (en) | 1988-11-14 | 1988-11-14 | Manufacture of electroluminescence display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02135695A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111286A (en) * | 1994-10-07 | 1996-04-30 | Tdk Corp | Manufacture of organic electroluminescent element |
-
1988
- 1988-11-14 JP JP63287404A patent/JPH02135695A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111286A (en) * | 1994-10-07 | 1996-04-30 | Tdk Corp | Manufacture of organic electroluminescent element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0111568B1 (en) | Thin film electric field light-emitting device | |
| EP1352545A2 (en) | Insertion layer for thick film electroluminescent displays | |
| US5721562A (en) | Electroluminescent display device including a columnar crystal structure insulating film | |
| JPH02135695A (en) | Manufacture of electroluminescence display device | |
| JP2686170B2 (en) | Thin film EL element | |
| JPS5824915B2 (en) | Thin film EL element | |
| EP0450077A1 (en) | Thin-film electroluminescent element and method of manufacturing the same | |
| JPS6068590A (en) | Method of forming insulating film | |
| JPS6359519B2 (en) | ||
| CA1242021A (en) | Thin film electroluminescent element | |
| JPH02144883A (en) | Film type el element | |
| JPH01204394A (en) | Thin film el element | |
| KR910004067A (en) | Thin film EL display device and manufacturing method thereof | |
| JPS6298597A (en) | Thin film el device | |
| JPH0982474A (en) | Thin-film type electroluminescent element and its manufacture | |
| JPH02132791A (en) | Thin-film el element | |
| JPS63224192A (en) | Thin film el panel | |
| JPH01217884A (en) | Manufacture of thin film el element | |
| JPS62216194A (en) | Electroluminescence panel | |
| JPS6142895A (en) | Thin film el panel | |
| JPH01146290A (en) | Thin film el element | |
| JPH02297894A (en) | Film el element | |
| JP2000273448A (en) | Blue light emitting fluorescent substance for electroluminescent element | |
| JPH01107493A (en) | Manufacture of thin film electro-luminescence element | |
| JPS6314833B2 (en) |