JPH0213470B2 - - Google Patents
Info
- Publication number
- JPH0213470B2 JPH0213470B2 JP675486A JP675486A JPH0213470B2 JP H0213470 B2 JPH0213470 B2 JP H0213470B2 JP 675486 A JP675486 A JP 675486A JP 675486 A JP675486 A JP 675486A JP H0213470 B2 JPH0213470 B2 JP H0213470B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer
- mesa structure
- indium
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 17
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 14
- 238000005253 cladding Methods 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OKNLBTNZLUNRDW-UHFFFAOYSA-N hydrogen peroxide;hydrobromide Chemical compound Br.OO OKNLBTNZLUNRDW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】
〔概要〕
インジウム燐系半導体を用いダブルヘテロ接合
をなす活性層を帯状のメサ構造にする埋込み形半
導体発光装置の製造において、
メサ構造を形成するエツチングのエツチング液
に、臭化水素と過酸化水素と水との混合液または
臭化水素と過酸化水素と酢酸との混合液を使用す
ることにより、
活性層の側面が（111）Ａ面にならないように
したものである。[Detailed Description of the Invention] [Summary] In the manufacture of an embedded semiconductor light emitting device in which an active layer forming a double heterojunction is formed into a band-shaped mesa structure using an indium phosphorus semiconductor, an etching solution used in etching to form the mesa structure is used. By using a mixture of hydrogen bromide, hydrogen peroxide, and water or a mixture of hydrogen bromide, hydrogen peroxide, and acetic acid, the side of the active layer is prevented from becoming the (111) A side. be.
本発明は、インジウム燐系半導体を用いダブル
ヘテロ接合をなす活性層を帯状のメサ構造にする
埋込み形半導体発光装置の製造方法に係り、特
に、そのメサ構造の製造方法に関す。
The present invention relates to a method of manufacturing an embedded semiconductor light emitting device in which an active layer forming a double heterojunction is formed into a band-shaped mesa structure using an indium phosphorus semiconductor, and particularly relates to a method of manufacturing the mesa structure.
上記に類する半導体発光装置には、例えばBH
（Buried Heterostructure）レーザなどがある。 Semiconductor light emitting devices similar to the above include, for example, BH
(Buried Heterostructure) laser, etc.
そしてBHレーザの類のレーザは、発振しきい
値電流が比較的小さい特徴から光通信などの光信
号源として用いられるが、発振しきい値電流の一
層の低減が望まれている。 Lasers such as BH lasers are used as optical signal sources for optical communications and the like because of their relatively small oscillation threshold current, but it is desired to further reduce the oscillation threshold current.
第３図はBHレーザの模式側断面図である。 FIG. 3 is a schematic side sectional view of the BH laser.
同図において、１はｎ型インジウム燐（InP）
の基板、２はｎ型InPのバツフア層、３は発光領
域となるインジウムガリウム砒素燐（InGaAsP）
の活性層、４はｐ型InPのクラツド層、５はクラ
ツド層４と活性層３とバツフア層２とで形成する
帯状（図面に垂直な方向が長手方向になる）のメ
サ構造、６はｐ型InPの電流阻止層、７はｎ型
InPの電流阻止層、８は二酸化シリコン（SiO2）
の絶縁層、９と１０は金属の電極である。 In the same figure, 1 is n-type indium phosphide (InP)
2 is an n-type InP buffer layer, 3 is indium gallium arsenide phosphide (InGaAsP) which becomes the light emitting region.
4 is a p-type InP cladding layer, 5 is a band-shaped mesa structure (the longitudinal direction is perpendicular to the drawing) formed by the cladding layer 4, the active layer 3, and the buffer layer 2, and 6 is a p-type InP cladding layer. Type InP current blocking layer, 7 is n-type
InP current blocking layer, 8 is silicon dioxide (SiO 2 )
The insulating layers 9 and 10 are metal electrodes.
このレーザは、メサ構造５において活性層３が
ダブルヘテロ接合をなし、電極９から電極１０に
向けて電流を流すと、電流阻止層６および７の間
で形成する逆方向Ｐ−Ｎ接合と、電流阻止層６お
よびバツフア層２の間で形成し活性層３部より立
ち上げり電圧が高くなる順方向Ｐ−Ｎ接合の存在
により、電流が活性層３に集中する。そしてその
電流を或る値（発振しきい値電流）以上に大きく
すると、レーザ発振を起こし活性層３からレーザ
光を発する。 In this laser, the active layer 3 forms a double heterojunction in the mesa structure 5, and when a current is passed from the electrode 9 to the electrode 10, a reverse PN junction is formed between the current blocking layers 6 and 7. Current is concentrated in the active layer 3 due to the presence of a forward PN junction formed between the current blocking layer 6 and the buffer layer 2 and having a higher rising voltage than the active layer 3 portion. When the current is increased above a certain value (oscillation threshold current), laser oscillation occurs and the active layer 3 emits laser light.
このレーザの従来の製造方法は第４図の工程順
側断面図ａ〜ｃの如くである。 A conventional manufacturing method for this laser is shown in step-by-step side cross-sectional views a to c in FIG. 4.
即ち〔図ａ参照〕、基板１上全面に、バツフア
層２、活性層３、クラツド層４、を例えば液相成
長法で堆積する。 That is, [see Figure a], a buffer layer 2, an active layer 3, and a cladding layer 4 are deposited over the entire surface of a substrate 1 by, for example, a liquid phase growth method.
次いで〔図ｂ参照〕、上面のメサ構造５形成領
域にSiO2のマスク１１を形成した後、臭素
（Br2）とメタノール（CH3OH）との混合液をエ
ツチング液にして活性層３が側面に表出するまで
エツチングしメサ構造５を形成する。 Next [see Figure b], after forming a SiO 2 mask 11 in the mesa structure 5 formation region on the upper surface, the active layer 3 is etched using a mixed solution of bromine (Br 2 ) and methanol (CH 3 OH) as an etching solution. The mesa structure 5 is formed by etching until it is exposed on the side surface.
次いで〔図ｃ参照〕、マスク１１をそのままに
して例えば液相成長法により電流阻止層６および
７を堆積する。 Then (see FIG. c), current blocking layers 6 and 7 are deposited, for example by liquid phase growth, with mask 11 left in place.
次いで〔第３図参照〕、マスク１１を除去した
後、絶縁層８、電極９および１０を形成し劈開て
完成する。 Next (see FIG. 3), after removing the mask 11, an insulating layer 8 and electrodes 9 and 10 are formed and cleaved to complete the process.
このように製造されたBHレーザは、メサ構造
５が逆メサ状になり、その側面が熱損傷を受け易
い（111）Ａ面になつている。また、先に述べた
エツチング液でエツチングされたバツフア層２の
面にはピツトが発生するため、電流阻止層６を堆
積した際に図ｃに示す如く未成長部分１２が生ず
る。
In the BH laser manufactured in this manner, the mesa structure 5 has an inverted mesa shape, and the side surfaces thereof are (111) A planes that are susceptible to thermal damage. Further, since pits are generated on the surface of the buffer layer 2 etched with the above-mentioned etching solution, when the current blocking layer 6 is deposited, an ungrown portion 12 is generated as shown in FIG.
このため電流を流した際に、図ｃに示す如く、
活性層３に集中すべき電流の一部が漏れ電流I1お
よびI2となつて発光に寄与しなくなり、発振しき
い値電流が大きくなる問題がある。 Therefore, when current is applied, as shown in Figure c,
There is a problem in that a part of the current that should be concentrated in the active layer 3 becomes leakage currents I 1 and I 2 and does not contribute to light emission, resulting in an increase in the oscillation threshold current.
上記問題点は、インジウム（In）を含む−
族混晶からなりInP燐結晶またはInと燐（Ｐ）を
主成分にする−族混晶に接してダブルヘテロ
接合を形成し発光領域となる活性層が、半導体基
板上に設けられて多層構造をなす半導体板を用
い、その上面にマスクを設けエツチングして該活
性層が含まれる帯状のメサ構造を形成するに際し
て、該エツチングのエツチング液として、臭化水
素（HBr）と過酸化水素（H2O2）と水（H2O）
との混合液およびHBrとH2O2と酢酸
（CH3CO2H）との混合液の中の何れか一方を用
いる本発明の製造方法によつて解決される。
The above problem is caused by − containing indium (In).
An active layer is provided on a semiconductor substrate to form a double heterojunction in contact with the InP phosphorus crystal or a - group mixed crystal, which is made of a group mixed crystal and forms a light-emitting region, and the main components are In and phosphorus (P). When forming a strip-shaped mesa structure containing the active layer by etching a semiconductor substrate with a mask on its upper surface, hydrogen bromide (HBr) and hydrogen peroxide (HBr) are used as the etching solution. 2 O 2 ) and water (H 2 O)
The problem is solved by the production method of the present invention using either a mixture of HBr, H 2 O 2 and acetic acid (CH 3 CO 2 H).
上記二種類のエツチング液は、第４図ｂに示し
たメサ構造５を形成するエツチングの際にその側
面が（111）Ａ面にならないようにし、且つ第４
図に示したピツト１２が発生しないようにするも
のとして、本願発明者が多くの経験を通して見い
だしたものである。
The two types of etching solutions mentioned above are used so that the side surface does not become the (111) A surface during etching to form the mesa structure 5 shown in FIG.
The inventor of this application has discovered through much experience what prevents the occurrence of the pit 12 shown in the figure.
そしてこのエツチング液の上記作用は、第３図
における活性層３の材料がInを含む−族混晶
であり、バツフア層２およびクラツド層４の材料
がInP結晶またはInとＰを主成分にする−族
混晶である場合を包含する。 The above-mentioned action of this etching solution is due to the fact that the material of the active layer 3 in FIG. This includes the case where it is a - group mixed crystal.
従つて上記二種類のエツチング液の何れか一方
を用いて第４図ｂで説明したエツチングを行え
ば、形成されたメサ構造５の側面は（111）Ａ面
になることを回避することが出来、また第４図ｃ
で説明した電流阻止層６の堆積において未成長部
分１２の発生を回避することが出来る。 Therefore, if the etching described in FIG. 4b is performed using either of the above two types of etching liquid, the side surface of the formed mesa structure 5 can be avoided from becoming the (111) A surface. , and Fig. 4c
The generation of ungrown portions 12 can be avoided in the deposition of current blocking layer 6 as described in .
このことは先に述べた漏れ電流I1およびI2の発
生を抑え、当該レーザのしきい値電流を低減させ
ることに繋がる。 This suppresses the occurrence of the leakage currents I 1 and I 2 mentioned above, leading to a reduction in the threshold current of the laser.
以下本発明方法の実施例について第１図および
第２図を用い説明する。
Examples of the method of the present invention will be described below with reference to FIGS. 1 and 2.
第１図は本発明第一の実施例の工程順側断面図
ａ〜ｃ、第２図は同じく第２の実施例の工程順側
断面図ａ〜ｃ、であり、各ａ〜ｃは従来方法を示
す第４図のａ〜ｃに対応している。また全図を通
じ同一符号は同一材料同一機能の対象物を示す。 FIG. 1 is a side cross-sectional view a to c in the order of steps of the first embodiment of the present invention, and FIG. 2 is a side cross-sectional view a to c in the order of steps of the second embodiment. This corresponds to a to c in FIG. 4 showing the method. In addition, the same reference numerals throughout the drawings indicate objects having the same material and the same function.
第１図に示す実施例によるレーザの製造は以下
の如くである。 The manufacturing of the laser according to the embodiment shown in FIG. 1 is as follows.
即ち〔図ａ参照〕、従来方法と同様にしてｎ型
InP基板１上全面に、ｎ型InPバツフア層２、
InGaAsP活性層３、ｐ型InPクラツド層４、を堆
積する。バツフア層２、活性層３、クラツド層４
の厚さは、それぞれ例えば、約2μｍ、約0.15μｍ、
約1.5μｍ、である。 That is, [see Figure a], the n-type
On the entire surface of the InP substrate 1, an n-type InP buffer layer 2,
An InGaAsP active layer 3 and a p-type InP cladding layer 4 are deposited. Buffer layer 2, active layer 3, cladding layer 4
For example, the thickness of is approximately 2 μm, approximately 0.15 μm, and
It is approximately 1.5 μm.
次いで〔図ｂ参照〕、上面のメサ構造５形成領
域にSiO2マスク１１を形成した後、水または酸
20c.c.、臭化水素（47wt％）４c.c.、過酸化水素水
（31wt％）２c.c.、の混合液を用いて、活性層３が
側面に表出するまでマスク１１の両側をエツチン
グし、図示形状のメサ構造５を形成する。メサ構
造５の寸法は、例えば各層の上記厚さに対して、
マスク１１の幅を約3μｍ、エツチング深さを約
1.8μｍにした場合、頂上部の幅が約1.5μｍ、クラ
ツド層４におけるくびれ部の幅が約0.8μｍ、活性
層３の幅が約1.5μｍ、である。そしてメサ構造５
の上記くびれ部より下側即ち活性層３の側面が表
出する側には（111）Ａ面の存在しない側面が形
成される。 Next [see Figure b], after forming a SiO 2 mask 11 in the mesa structure 5 formation region on the upper surface, water or acid
Using a mixed solution of 20 c.c., hydrogen bromide (47 wt%), 4 c.c., and hydrogen peroxide (31 wt%), the mask 11 is heated until the active layer 3 is exposed on the side surface. Both sides are etched to form a mesa structure 5 in the shape shown. The dimensions of the mesa structure 5 are, for example, relative to the above-mentioned thickness of each layer.
The width of the mask 11 is approximately 3 μm, and the etching depth is approximately
When the width is 1.8 μm, the width of the top portion is approximately 1.5 μm, the width of the constriction of the cladding layer 4 is approximately 0.8 μm, and the width of the active layer 3 is approximately 1.5 μm. and mesa structure 5
A side surface in which the (111) A plane does not exist is formed below the constriction, ie, on the side where the side surface of the active layer 3 is exposed.
次いで〔図ｃ参照〕、従来方法と同様にして電
流阻止層６および７を堆積する。この場合、従来
方法で生じた未成長部分１２の発生は起こらな
い。 Then [see FIG. c] current blocking layers 6 and 7 are deposited in a conventional manner. In this case, the ungrown portion 12 that occurs in the conventional method does not occur.
次いで〔第３図参照〕、従来方法と同様に、マ
スク１１を除去した後、絶縁層８、電極９および
１０を形成して劈開して完成する。 Next (see FIG. 3), as in the conventional method, after removing the mask 11, the insulating layer 8, electrodes 9 and 10 are formed and cleaved to complete the process.
かく製造されたレーザは、先に述べた漏れ電流
I1およびI2の発生が抑えられ、発振しきい値電流
が、従来方法により活性層３を略同一寸法に製造
されたレーザの約1/2に低減した。 The laser manufactured in this way has the leakage current mentioned above.
The generation of I 1 and I 2 was suppressed, and the oscillation threshold current was reduced to about 1/2 of that of a laser manufactured by the conventional method with the active layer 3 having approximately the same dimensions.
第２図に示す実施例によるレーザの製造は、第
１図ｂ図示のSiO2マスク１１をレジスト（AZ）
のマスク１１ａに替え同一のエツチング液を使用
してメサ構造５を形成し、マスク１１ａを除去し
た後、第２図ｃ図示の如く電流阻止層６および７
とｐ型InPのキヤツプ層１３とを堆積するもので
ある。この場合は、第２図に示す如く、メサ構造
５の頂上部の幅が第一の実施例の場合より小さく
なつてクラツド層４におけるくびれが消失し、全
面に渡り（111）Ａ面の存在しない側面が形成さ
れる。そして発振しきい値電流が抵減するのは第
一の実施例と同様である。 To manufacture the laser according to the embodiment shown in FIG. 2, the SiO 2 mask 11 shown in FIG. 1b is used as a resist (AZ).
The mesa structure 5 is formed using the same etching solution in place of the mask 11a, and after removing the mask 11a, the current blocking layers 6 and 7 are formed as shown in FIG. 2c.
and a p-type InP cap layer 13 are deposited. In this case, as shown in FIG. 2, the width of the top of the mesa structure 5 is smaller than that of the first embodiment, the constriction in the cladding layer 4 disappears, and the (111) A plane exists over the entire surface. A side that does not exist is formed. Similarly to the first embodiment, the oscillation threshold current is reduced.
また図示はないが、クラツド層４の上に、厚さ
0.1μｍ程度のInGaAsP層を設ければ、SiO2マス
ク１１を使用しても第二の実施例と同様なメサ構
造５を形成することが出来る。 Although not shown in the figure, on top of the clad layer 4, a thickness
If an InGaAsP layer of about 0.1 μm is provided, a mesa structure 5 similar to that of the second embodiment can be formed even if the SiO 2 mask 11 is used.
なお上記実施例では、バツフア層２、活性層
３、クラツド層４の材料を特定しているが、活性
層３の材料がInを含む−族混晶であり、バツ
フア層２およびクラツド層４のそれぞれの材料が
InPまたはInとＰを主成分にする−族混晶で
あるならば、実施例と同一のエツチング液を使用
して実施例と同様なメサ構造５を形成することが
出来る。 In the above embodiment, the materials of the buffer layer 2, the active layer 3, and the cladding layer 4 are specified, but the material of the active layer 3 is a - group mixed crystal containing In, and the material of the buffer layer 2 and the cladding layer 4 is each material
If it is InP or a - group mixed crystal containing In and P as main components, the same mesa structure 5 as in the embodiment can be formed using the same etching solution as in the embodiment.
また上記実施例はBHレーザを例にして示した
が、上記材料を用いダブルヘテロ接合をなす活性
層３がメサ構造５に設けられる埋込み形半導体発
光装置であるならば、本発明の構成が有効である
ことは容易に類推可能である。 Furthermore, although the above embodiment has been shown using a BH laser as an example, the structure of the present invention is effective if it is a buried type semiconductor light emitting device in which the active layer 3 forming a double heterojunction using the above material is provided in the mesa structure 5. It can be easily inferred that this is the case.
以上説明したように本発明の構成によれば、イ
ンジウム燐系半導体を用いダブルヘテロ接合をな
す活性層を帯状のメサ構造に有する埋込み形半導
体発光装置の製造において、活性層の側面が
（111）Ａ面にならないようにすることが出来て、
例えばBHレーザの発振しきい値電流を低減させ
る効果がある。
As explained above, according to the configuration of the present invention, in manufacturing an embedded semiconductor light emitting device having an active layer forming a double heterojunction in a band-shaped mesa structure using an indium phosphorous semiconductor, the side surface of the active layer is (111). I was able to prevent it from becoming the A side,
For example, it has the effect of reducing the oscillation threshold current of a BH laser.
第１図は本発明第一の実施例の工程順側断面図
ａ〜ｃ、第２図は本発明第二の実施例の工程順側
断面図ａ〜ｃ、第３図はBHレーザ例の模式側断
面図、第４図はは第３図図示レーザの従来の製造
方法を示す工程順側断面図ａ〜ｃ、である。
図において、１は基板、２はバツフア層、３は
活性層、４はクラツド層、５はメサ構造、６，７
は電流阻止層、８は絶縁層、９，１０は電極、１
１，１１ａはマスク、１２は未成長部分、１３は
キヤツプ層、I1，I2は漏れ電流、である。
1 is a side sectional view a to c of the first embodiment of the present invention, FIG. 2 is a side sectional view a to c of the second embodiment of the present invention, and FIG. FIG. 4 is a schematic side sectional view, and FIG. 4 is a step-by-step side sectional view a to c showing a conventional manufacturing method of the laser shown in FIG. In the figure, 1 is a substrate, 2 is a buffer layer, 3 is an active layer, 4 is a cladding layer, 5 is a mesa structure, 6, 7
is a current blocking layer, 8 is an insulating layer, 9 and 10 are electrodes, 1
1 and 11a are masks, 12 is an ungrown portion, 13 is a cap layer, and I 1 and I 2 are leakage currents.
Claims (1)
ジウム燐結晶またはインジウムと燐を主成分にす
る−族混晶に接してダブルヘテロ接合を形成
し発光領域となる活性層が、半導体基板上に設け
られて多層構造をなす半導体板を用い、その上面
にマスクを設けエツチングして該活性層が含まれ
る帯状のメサ構造を形成するに際して、該エツチ
ングのエツチング液として、臭化水素と過酸化水
素と水との混合液および臭化水素と過酸化水素と
酢酸との混合液の中の何れか一方を用いることを
特徴とする半導体発光装置の製造方法。1. An active layer that forms a double heterojunction in contact with an indium phosphorous crystal made of a - group mixed crystal containing indium or a - group mixed crystal mainly composed of indium and phosphorus to form a light emitting region is provided on a semiconductor substrate. When using a semiconductor board with a multilayer structure and etching a mask on the top surface to form a band-shaped mesa structure containing the active layer, hydrogen bromide, hydrogen peroxide, and water are used as the etching solution. 1. A method for manufacturing a semiconductor light emitting device, the method comprising using one of a mixture of hydrogen bromide, hydrogen peroxide and acetic acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61006754A JPS62165384A (en) | 1986-01-16 | 1986-01-16 | Manufacture of semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61006754A JPS62165384A (en) | 1986-01-16 | 1986-01-16 | Manufacture of semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62165384A JPS62165384A (en) | 1987-07-21 |
| JPH0213470B2 true JPH0213470B2 (en) | 1990-04-04 |
Family
ID=11646971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61006754A Granted JPS62165384A (en) | 1986-01-16 | 1986-01-16 | Manufacture of semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62165384A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0641584U (en) * | 1992-11-18 | 1994-06-03 | 方義 渡辺 | Bath tub with stool |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6206247B2 (en) | 2014-02-26 | 2017-10-04 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
-
1986
- 1986-01-16 JP JP61006754A patent/JPS62165384A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0641584U (en) * | 1992-11-18 | 1994-06-03 | 方義 渡辺 | Bath tub with stool |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62165384A (en) | 1987-07-21 |
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| Date | Code | Title | Description |
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