JPH02133383A - Conductive paste and mullite multilayered wiring board formed by using this paste - Google Patents
Conductive paste and mullite multilayered wiring board formed by using this pasteInfo
- Publication number
- JPH02133383A JPH02133383A JP28357188A JP28357188A JPH02133383A JP H02133383 A JPH02133383 A JP H02133383A JP 28357188 A JP28357188 A JP 28357188A JP 28357188 A JP28357188 A JP 28357188A JP H02133383 A JPH02133383 A JP H02133383A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- paste
- weight
- mullite
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052863 mullite Inorganic materials 0.000 title claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 47
- 238000005245 sintering Methods 0.000 claims abstract description 36
- 239000012298 atmosphere Substances 0.000 claims abstract description 10
- 239000002562 thickening agent Substances 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims description 28
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 19
- FMZUHGYZWYNSOA-VVBFYGJXSA-N (1r)-1-[(4r,4ar,8as)-2,6-diphenyl-4,4a,8,8a-tetrahydro-[1,3]dioxino[5,4-d][1,3]dioxin-4-yl]ethane-1,2-diol Chemical compound C([C@@H]1OC(O[C@@H]([C@@H]1O1)[C@H](O)CO)C=2C=CC=CC=2)OC1C1=CC=CC=C1 FMZUHGYZWYNSOA-VVBFYGJXSA-N 0.000 abstract description 2
- 238000013329 compounding Methods 0.000 abstract description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 abstract description 2
- 229910004282 SiO—MgO Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 27
- 239000010409 thin film Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 238000002156 mixing Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003349 gelling agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ムライト多層配線基板、特に厚膜・薄膜混成
基板に適合する導体ペーストおよびこれを用いたムライ
ト多層配線基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a conductor paste suitable for mullite multilayer wiring boards, particularly thick film/thin film hybrid boards, and a mullite multilayer wiring board using the same.
最近、多層配線基板においてこれまで用いられてきたア
ルミナセラミック基板に比べ訪電率の低い、特公昭６１
−１５５３２号に記載されているようなムライトセラミ
ック基板が注目されている。第１図は厚膜基板にムライ
トセラミックスを用いた厚膜・薄膜混成基板の断面模式
図で、グリーンシート法によシ＆層したムライトセラミ
ック基板１０内部にスルーホール導体２と配線導体３を
厚膜で形成し、基板１と同時焼成した後、この基板表面
に有機絶層４と配線導体５を薄膜で形成し、薄膜導体５
にはんだ層６を介してＬＳＩチップ７を接続したもので
ある。この場合、スルーホール導体２を形成する材料と
して、従来、アルミナセラミック基板に用いられている
Ｗ粉末を含む導体ペーストがあるが、ムライト多層配線
基板に適合するものはなかった。Recently, in multi-layer wiring boards, the number of visitors has been lower than that of the alumina ceramic substrates that have been used up until now.
Mullite ceramic substrates such as those described in No. 15532 are attracting attention. Figure 1 is a schematic cross-sectional view of a thick film/thin film hybrid board using mullite ceramics as a thick film board, in which through-hole conductors 2 and wiring conductors 3 are thickly arranged inside a mullite ceramic board 10 which is formed and layered by the green sheet method. After forming a film and firing simultaneously with the substrate 1, an organic insulation layer 4 and a wiring conductor 5 are formed as a thin film on the surface of this substrate.
An LSI chip 7 is connected via a solder layer 6. In this case, as a material for forming the through-hole conductor 2, there is a conductor paste containing W powder that is conventionally used for alumina ceramic substrates, but there is no material suitable for mullite multilayer wiring boards.
従来、アルミナセラミック基板に用いられている導体ペ
ーストは、ムライトセラミックスとの焼結収縮率のマツ
チングについて配慮されていないため、ムライトセラミ
ック基板１と該基板のスルーホールに充填された導体ペ
ーストとを同時焼成した場合、第２図、第３図に示すよ
うに、スルーホール導体２が基板１の表面よ＃）１０〜
２５μｍと大きく突出して、突起部８が発生し、このた
め、基板表面への薄膜形成が困難であるという問題があ
った。Conventionally, the conductive paste used for alumina ceramic substrates does not take into account the matching of the sintering shrinkage rate with mullite ceramics, so the mullite ceramic substrate 1 and the conductive paste filled in the through holes of the substrate are simultaneously used. When fired, as shown in FIGS. 2 and 3, the through-hole conductor 2 is close to the surface of the substrate 1.
There was a problem in that the protrusions 8 were formed with a large protrusion of 25 μm, making it difficult to form a thin film on the surface of the substrate.
この点についてさらに詳しく説明すると次のようになる
。導体ペースト中のＷ粉末の焼結収縮量は平均粒径と関
係しているが、アルミナセラミック基板では、アルミナ
セラミックスに使用される焼結助剤がＷ粒子間に浸透す
るため、Ｗ粒子はアルミナセラミックスとほぼ同様の収
縮挙動を示す。This point will be explained in more detail as follows. The amount of sintering shrinkage of the W powder in the conductor paste is related to the average particle size, but in alumina ceramic substrates, the sintering aid used for alumina ceramics penetrates between the W particles, so the W particles are Shows almost the same shrinkage behavior as ceramics.
しかし、ムライトセラミック基板では、Ｗ粒子間への焼
結助剤の浸透が少なく、その浸透距離はムライトセラミ
ックスとＷ粉末との接触面から１０μｍ程度である。こ
のため、Ｗ粉末の焼結収縮率は３〜７％と小さく、ムラ
イトセラミックスの焼結収縮率１６〜２３％に比べ大き
な差がある。突起部８の発生要因となるこの焼結収縮差
を小さくすることが課題である。However, in the mullite ceramic substrate, the sintering aid hardly penetrates between the W particles, and the penetration distance is about 10 μm from the contact surface between the mullite ceramic and the W powder. Therefore, the sintering shrinkage rate of W powder is small at 3 to 7%, which is a large difference compared to the sintering shrinkage rate of mullite ceramics, which is 16 to 23%. The challenge is to reduce this difference in sintering shrinkage, which is a factor in the formation of the protrusions 8.
本発明の目的は、上記課題を解決し、薄膜形成の容易な
ムライト多層配線基板を製作するのに適した導体ペース
トおよびこれを用いたムライト多層配線基板を提供する
ことにるる。An object of the present invention is to solve the above-mentioned problems and provide a conductive paste suitable for manufacturing a mullite multilayer wiring board that can be easily formed into a thin film, and a mullite multilayer wiring board using the same.
上記目的は、７００〜８５０℃の還元雰囲気で作製した
Ｗ粉末（Ｉ）と９００〜１０００℃の還元雰囲気で作製
したＷ粉末（ｆｆ）とを含有し、Ｗ粉末（Ｉ）対Ｗ粉末
（ＩＩ）の重量比が２０ ：８０ないし６０二４０であ
る導体ペーストとすることで達成される。The above object contains W powder (I) produced in a reducing atmosphere of 700 to 850°C and W powder (ff) produced in a reducing atmosphere of 900 to 1000°C. ) in a weight ratio of 20:80 to 60:40.
Ｗ粉末の焼結収縮率を大きくする方法としては、ほかに
焼結助剤の利用とＷ粉末の粒径の適正化が挙げられる。Other methods for increasing the sintering shrinkage rate of W powder include using a sintering aid and optimizing the particle size of W powder.
しかし、焼結助剤の添加量が多いと、焼結後、基板のス
ルーホール近傍にクラックが発生しやすく、さらにペー
ストの粘度が高まシ、スルーホールへの充填が困難にな
る０また、Ｗ粉末は、ボールミル等で微粉化しても、そ
の焼結収縮率はそれほど小さくならず、かえって収縮バ
ラツキが大きくなる傾向がある。However, if the amount of sintering aid added is large, cracks are likely to occur near the through holes of the substrate after sintering, and the viscosity of the paste increases, making it difficult to fill the through holes. Even if W powder is pulverized using a ball mill or the like, its sintering shrinkage rate does not decrease so much, and the variation in shrinkage tends to increase.
本発明は、Ｗ粉床の作製過程での還元温度によシ焼結収
縮率の異なる点に着目してなされたものである。すなわ
ち、還元温度を種々変えて作製したＷ粉末について焼結
収縮率を調べた結果、７００〜８５０℃の還元雰囲気で
作製したＷ粉末（Ｉ）は、焼結収縮率が比較的大きく、
９００〜１０００℃の還元雰囲気で作製したＷ粉末（Ｉ
［）は、焼結収縮率が比較的小さく、ボールミル等で微
粉化しても、焼結収縮率は約１％小さくなる程度である
ことが判った。そこで、この還元温度の異なるＷ粉末（
Ｉ）とＷ粉末（Ｉ［）を混合し、その混合割合を前記の
範囲に選定することによシ、薄膜形成に支障のない程度
に基板表面に対するスルーホール導体の凹凸量を小さく
することを可能にした。The present invention was made by focusing on the fact that the sintering shrinkage rate varies depending on the reduction temperature during the process of producing a W powder bed. That is, as a result of examining the sintering shrinkage rate of W powder produced at various reducing temperatures, the sintering shrinkage rate of W powder (I) produced in a reducing atmosphere of 700 to 850°C was relatively large;
W powder (I
It was found that the sintering shrinkage rate of [) is relatively small, and even if it is pulverized using a ball mill or the like, the sintering shrinkage rate is only about 1% smaller. Therefore, this W powder with different reduction temperatures (
By mixing I) and W powder (I[) and selecting the mixing ratio within the above range, it is possible to reduce the amount of unevenness of the through-hole conductor on the substrate surface to the extent that it does not interfere with thin film formation. made possible.
４体ペーストは、スルーホールに充填しやすいことが必
要である。このため、ペースト原料とその配合比を次の
ように選定することが望ましい。The four-body paste needs to be easy to fill through holes. For this reason, it is desirable to select the paste raw materials and their blending ratios as follows.
焼結助剤・・・ａ５〜５Ｎ量部
解膠剤・・・・・・α０５〜２重量部
増粘剤・・・・・・α５〜５重量部
〔作用〕
焼結収縮率の大きいＷ粉末（Ｉ）と焼結収縮率の小さい
Ｗ粉末（ＩＩ）を、Ｗ粉末（ｒ） ２０〜６０重量％、
Ｗ粉末（ＩＩ） ４０〜８０重量％の割合で混合するこ
とＫよシ、Ｗ粉末の焼結収縮率はムライトセラミックス
の焼結収縮率に近くなシ、さらに焼結助剤として１２０
．−８１０−Ｍｇ０等を添加することで、基板表面に出
ているＷ粉末の焼結収縮が助成される。Sintering aid: a5-5 parts by weight Peptizer: α05-2 parts by weight Thickener: α5-5 parts by weight [Function] W with large sintering shrinkage rate Powder (I) and W powder (II) with a small sintering shrinkage rate were combined with W powder (r) 20 to 60% by weight,
W powder (II) should be mixed at a ratio of 40 to 80% by weight.The sintering shrinkage rate of W powder is close to that of mullite ceramics, and 120% as a sintering aid.
．． By adding -810-Mg0 or the like, sintering shrinkage of the W powder exposed on the substrate surface is assisted.
それによって、基板表面に対するスルーホール導体の凹
凸量を薄膜形成のだめの許容範囲内とすることができた
。As a result, the amount of unevenness of the through-hole conductor on the substrate surface could be kept within the allowable range for forming a thin film.
６ペーストのスルーホールに充填しにくい原因は、焼結
助剤がビヒクルとぬれＫくい、Ｗ微粉末がビヒクルとぬ
れるのに時間がかかる、あるいは増粘剤として用いるゲ
ル化剤のゲル化力のバラツキなどによる、チクソトロピ
ー性の過不足にあることから、チクソトロピー性を適正
化することによシ、ねばシが発生し充填しやすくなると
考え、解膠剤として効果のある表面活性剤等の添加によ
シ、粘度が低く、ねばシとチクソトロピー性が充填に適
した値と々るようにした。それＫよって、スルーホール
に充填しやすいペーストとすることができた。6. The reasons why it is difficult to fill through holes with paste are that the sintering aid does not get wet with the vehicle, that it takes time for the W fine powder to get wet with the vehicle, or that the gelling power of the gelling agent used as a thickener is insufficient. Since there is an excess or deficiency in thixotropy due to variations, etc., we believe that by optimizing thixotropy, stickiness will occur and it will be easier to fill. The viscosity is low, and the stickiness and thixotropy are at values suitable for filling. Therefore, the paste could be easily filled into through holes.
以下、本発明の実施例を第４図によシ説明する〇下記の
原料と配合比によυドクターブレード法で作製した生の
ムライトセラミックシート（以下、グリーンシートとよ
ぶ）を、１００℃、１２Ｋｇ／ｃｍ２でホットプレスに
よシ平坦化した後、ＮＧ穴明は機によシφα１３ｍｍの
スルーホールを必要数形成し九〇
グリーンシート原料と配合比
このグリーンシートのスルーホールに、下記の原料と配
合比による導体ペーストをスクリーン印刷法で充填した
。Hereinafter, an example of the present invention will be explained with reference to FIG. 4. A raw mullite ceramic sheet (hereinafter referred to as a green sheet) produced by the υ doctor blade method using the following raw materials and blending ratio was heated at 100°C. After flattening by hot press at 12Kg/cm2, NG Anamei is machined to form the required number of through holes of φα13mm. A conductive paste with a mixing ratio of
導体ペーストの原料と配合比
焼結助剤 ・・・ＣｔＳ〜５重量部解膠剤 ・
・・・・・（１０５〜２重量部増粘剤 ・・・・・
・α５〜３ 重量部ただし、上に示したＷ粉末は、７０
０〜８５０℃の還元雰囲気で作製したＷ粉末（Ｉ） ２
０〜６０重量％と、９００〜１０００℃の還元雰囲気で
作製したＷ粉末（ＩＩ） ４０〜８０重量％を混合した
ものである。Raw materials and compounding ratio of conductor paste Sintering aid: CtS ~ 5 parts by weight Deflocculant ・
・・・・・・(105~2 parts by weight thickener ・・・・・・
・α5~3 parts by weight However, the W powder shown above is 70 parts by weight.
W powder (I) produced in a reducing atmosphere at 0 to 850°C 2
It is a mixture of 0 to 60% by weight and 40 to 80% by weight of W powder (II) produced in a reducing atmosphere at 900 to 1000°C.
上記したＷ粉末（Ｉ）およびＷ粉末（ＩＩ）の還元温度
および混合割合は、後述するような所期の焼結収縮率を
満足する範囲を規定したもので、Ｗ粉末（Ｉ）の還元温
度が上記範囲の下限（７００℃）よシ低いと、焼結収縮
率が所期の値より大きくなり、Ｗ粉末（ＩＩ）の還元温
度が上記範囲の上限（１０００℃）を超えると、焼結収
縮率が所期の値よシ小さくなって、いずれも不適である
。また、１０００℃を超える還元温度では、Ｗ粉末の粒
成長が大きく、粒同士の固着力も強いため、粉砕が困難
となる０これらのＷ粉末（Ｉ）およびＷ粉末（Ｉ［）は
、作製された粉末をそのｉま使用しても良いし、ボール
ミル、かいらい機等で微粉化して使用しても良い。ビヒ
クルに対するＷ粉末の配合量が８４重ｆｔ％よシ少ない
と、ペーストの粘度が低過ぎて充填不良となる。The reduction temperature and mixing ratio of W powder (I) and W powder (II) described above are defined within a range that satisfies the desired sintering shrinkage rate as described below. is lower than the lower limit of the above range (700°C), the sintering shrinkage rate becomes larger than the desired value, and when the reduction temperature of W powder (II) exceeds the upper limit of the above range (1000°C), the sintering shrinkage rate becomes higher than the desired value. The shrinkage rate is smaller than the expected value, and both are unsuitable. In addition, at reduction temperatures exceeding 1000°C, the grain growth of W powder is large and the adhesion between grains is strong, making it difficult to grind. The resulting powder may be used as it is, or may be pulverized using a ball mill, miller, etc. If the amount of W powder added to the vehicle is less than 84 weight %, the viscosity of the paste will be too low, resulting in poor filling.
また、Ｗ粉末の配合量が８９重量％を超えると、ペース
トの粘度が高過ぎて充填できなくなる０ビヒクルは、一
般に使用されているエチルセルロース等のバインダをｎ
−ブチルカルピトールや、α−テルピネオールあるいは
ｎ−ブチルカルピトールアセテートやトリデカトール等
の溶剤に溶解したもので、粘度は２０００〜９０００
Ｐｑ、６ ／ ４５ｅｃ−’ （回転粘度計）が適当で
ある。焼結助剤にはＡＪ２０５−８ｉＯ−ＭｇＯを使用
するが、α５重量部未満では効果がなく、５重量部を超
えると、基板のスルーホール近傍にクラックが発生する
。解膠剤には、表面活性剤、カップリング剤あるいはへ
キサメチルホスホトリアミドのような極性非プロトン溶
媒を、Ｗ粉末のぬれ性向上も考慮して使用する。その添
加量は前記の範囲が適当でα０５重量部未満では効果が
なく、ペーストの粘度が高く、チクソトロピー性が強過
ぎてねばシがないため、スルーホールに充填できない。In addition, when the blending amount of W powder exceeds 89% by weight, the viscosity of the paste becomes too high and it becomes impossible to fill the vehicle.
-It is dissolved in a solvent such as butylcarpitol, α-terpineol, n-butylcarpitol acetate, or tridecatol, and has a viscosity of 2,000 to 9,000.
Pq, 6/45ec-' (rotational viscometer) is suitable. AJ205-8iO-MgO is used as a sintering aid, but if it is less than α5 parts by weight, it is ineffective, and if it exceeds 5 parts by weight, cracks will occur near the through holes of the substrate. As the deflocculant, a surfactant, a coupling agent, or a polar aprotic solvent such as hexamethylphosphotriamide is used in consideration of improving the wettability of the W powder. The appropriate amount of addition is within the above range; if it is less than α05 parts by weight, it will not be effective, and the paste will have a high viscosity and too strong thixotropy and will not be sticky, so it cannot be filled into through holes.
また、２重量部を超えると、ペースト印刷時の粘度変化
が犬きく、充填が不安定になる。解膠剤は１種でも艮い
し、数稚添加しても良い。また、添加方法としては、原
料粉末とともにボールミル処理等で付与しても良いし、
べ一スト化した状態で添加しても良い。増粘剤には、ジ
ベンジリデン−Ｄ−ソルビトール等のゲル化剤を使用す
るが、α５重量部未満では効果がなく、充填しにくい。Furthermore, if the amount exceeds 2 parts by weight, the viscosity changes significantly during paste printing and filling becomes unstable. One type of deflocculant may be used, or several types may be added. In addition, as for the addition method, it may be added by ball milling etc. together with the raw material powder,
It may be added in the form of a paste. A gelling agent such as dibenzylidene-D-sorbitol is used as a thickener, but if it is less than α5 parts by weight, it is ineffective and difficult to fill.
また、３重量部を超えると、チクソトロピー性が強過ぎ
て充填できなくなる。Moreover, if it exceeds 3 parts by weight, the thixotropic property becomes too strong and filling becomes impossible.
導体ペーストをスルーホールに充填した後、各層の配線
パターンをスクリーン印刷法で形成する。After filling the through holes with conductive paste, wiring patterns for each layer are formed by screen printing.
このようにしてスルーホール導体、配線導体を形成した
グリーンシート４〜６０枚をホットプレス法で熱圧溜し
た後、水素還元雰囲気で１時間、１６００〜１６５０℃
で焼結した。焼成された厚膜基板の表面のセラミックぐ
ずやスルーホール部の凹凸をできるだけなくすために、
軽く機械的に表面の平滑化処理を行なった。この表面に
ポリイミド等の有機絶縁材料を塗布、乾燥させ、その上
にＡ！！等の配線導体の薄膜をスパッタ法で形成した後
、エツチングによシ配線パターンを形成する工程を反覆
して、２〜４層の薄膜層を形成した。After 4 to 60 green sheets on which through-hole conductors and wiring conductors have been formed in this way are heat-pressed using a hot press method, they are heated at 1600 to 1650°C in a hydrogen reducing atmosphere for 1 hour.
Sintered with In order to eliminate as much as possible ceramic debris on the surface of the fired thick film substrate and unevenness in the through holes,
The surface was lightly smoothed mechanically. An organic insulating material such as polyimide is applied to this surface, dried, and A! ! After forming a thin film of a wiring conductor such as the above by sputtering, the process of forming a wiring pattern by etching was repeated to form two to four thin film layers.
このようにして製作した厚膜・薄膜混成多層配線基板は
、第４図に示すように％ ７００〜８５０℃の還元雰囲
気で作製したＷ粉末（Ｉ）を２０〜６０重量％配合した
領域（Ａ）で、基板表面に対するスルーホール導体の凹
凸量が±５μｍ以内となシ、薄膜形成での有機絶縁層お
よび薄膜導体の配線パターン形成不良の発生がなくなっ
た。また、スルーホール導体の凹凸量が±５μｍ以内で
あれば、スルーホール導体上に配線ペーストでスルーホ
ール径よシ大きいパッドを形成しても問題がなかった。The thick-film/thin-film hybrid multilayer wiring board manufactured in this way has an area (A ), as long as the amount of unevenness of the through-hole conductor with respect to the substrate surface was within ±5 μm, defects in the formation of wiring patterns of the organic insulating layer and the thin film conductor during thin film formation were eliminated. Further, as long as the amount of unevenness of the through-hole conductor was within ±5 μm, there was no problem even if a pad larger than the diameter of the through-hole was formed using wiring paste on the through-hole conductor.
本発明によれば、導体ペースト中のＷ粉末の焼結収縮率
をムライトセラミックスの焼結収縮率に近い値とするこ
とができるため、この導体ペーストをムライト多層配線
基板に使用することによυ、従来の導体ペーストを用い
た場合に比べ、基板表面に対するスルーホール導体の凹
凸量を十分小さくすることができる。それによって、厚
膜・薄膜混成基板の製作時に、厚膜基板（ムライトセラ
ミックス）表面への薄膜形成が容易となシ、歩留り艮く
製作することが可能となった。According to the present invention, the sintering shrinkage rate of the W powder in the conductor paste can be made close to the sintering shrinkage rate of mullite ceramics. Compared to the case of using a conventional conductor paste, the amount of unevenness of the through-hole conductor on the substrate surface can be sufficiently reduced. As a result, when manufacturing a thick-film/thin-film hybrid substrate, it is easy to form a thin film on the surface of the thick-film substrate (mullite ceramics), and it has become possible to manufacture the substrate at a high yield.
第１図は従来技術を説明するための厚膜・ｗＩ膜混成基
板の断面模式図、第２図は厚膜基板（ムライトセラミッ
クス）表面付近の拡大断面図、第５図は厚膜基板表面の
スルーホール導体の凹凸量とＷ粉末粒径の関係を示す従
来技術の説明図、第４図は厚膜基板表面のスルーホール
導体の凹凸量とＷ粉末混合割合の関係を示す本発明の説
明図である。
１・・・ムライトセラミック基板、２・・・スルーホー
ル導体（厚膜）、６・・・配線導体（厚膜）、４・・・
有機絶縁層（薄膜）、５・・・配線導体（薄膜）、６・
・・はんだ層、７・・・ＬＳＩチップ、８・・・突起部
（スルーホール導体）。
第２０Fig. 1 is a schematic cross-sectional view of a thick film/wI film hybrid substrate for explaining the conventional technology, Fig. 2 is an enlarged cross-sectional view of the vicinity of the surface of the thick film substrate (mullite ceramics), and Fig. 5 is a schematic cross-sectional view of the surface of the thick film substrate (mullite ceramics). An explanatory diagram of the prior art showing the relationship between the amount of unevenness of the through-hole conductor and the W powder particle size, and FIG. 4 is an explanatory diagram of the present invention showing the relationship between the amount of unevenness of the through-hole conductor on the surface of the thick film substrate and the W powder mixing ratio. It is. DESCRIPTION OF SYMBOLS 1... Mullite ceramic board, 2... Through-hole conductor (thick film), 6... Wiring conductor (thick film), 4...
Organic insulating layer (thin film), 5... Wiring conductor (thin film), 6.
...Solder layer, 7...LSI chip, 8...Protrusion (through-hole conductor). 20th
Claims (3)
Ｉ）と９００〜１０００℃の還元雰囲気で作製したＷ粉
末（II）とを含有し、Ｗ粉末（Ｉ）対Ｗ粉末（II）の重
量比が２０：８０ないし６０：４０である導体ペースト
。1. W powder produced in a reducing atmosphere at 700-850°C (
A conductive paste containing W powder (I) and W powder (II) produced in a reducing atmosphere at 900 to 1000° C., the weight ratio of W powder (I) to W powder (II) being 20:80 to 60:40.
イト多層配線基板。3. A mullite multilayer wiring board using the conductor paste according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28357188A JPH02133383A (en) | 1988-11-11 | 1988-11-11 | Conductive paste and mullite multilayered wiring board formed by using this paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28357188A JPH02133383A (en) | 1988-11-11 | 1988-11-11 | Conductive paste and mullite multilayered wiring board formed by using this paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02133383A true JPH02133383A (en) | 1990-05-22 |
Family
ID=17667251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28357188A Pending JPH02133383A (en) | 1988-11-11 | 1988-11-11 | Conductive paste and mullite multilayered wiring board formed by using this paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02133383A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5029462A (en) * | 1973-07-19 | 1975-03-25 | ||
| JPS6273791A (en) * | 1985-09-27 | 1987-04-04 | 株式会社日立製作所 | Ceramic circuit substrate |
| JPS63122195A (en) * | 1986-11-12 | 1988-05-26 | 株式会社日立製作所 | Conductor paste for mullite system ceramic multilayer interconnection board |
-
1988
- 1988-11-11 JP JP28357188A patent/JPH02133383A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5029462A (en) * | 1973-07-19 | 1975-03-25 | ||
| JPS6273791A (en) * | 1985-09-27 | 1987-04-04 | 株式会社日立製作所 | Ceramic circuit substrate |
| JPS63122195A (en) * | 1986-11-12 | 1988-05-26 | 株式会社日立製作所 | Conductor paste for mullite system ceramic multilayer interconnection board |
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