JPH0213286B2 - - Google Patents
Info
- Publication number
- JPH0213286B2 JPH0213286B2 JP57211312A JP21131282A JPH0213286B2 JP H0213286 B2 JPH0213286 B2 JP H0213286B2 JP 57211312 A JP57211312 A JP 57211312A JP 21131282 A JP21131282 A JP 21131282A JP H0213286 B2 JPH0213286 B2 JP H0213286B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- heat absorption
- substrate
- crystal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 28
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004990 Smectic liquid crystal Substances 0.000 claims description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 28
- 239000011521 glass Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 3
- WLPATYNQCGVFFH-UHFFFAOYSA-N 2-phenylbenzonitrile Chemical group N#CC1=CC=CC=C1C1=CC=CC=C1 WLPATYNQCGVFFH-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/132—Thermal activation of liquid crystals exhibiting a thermo-optic effect
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、光ビーム書込み液晶素子に係り、特
に少ない光ビームパワーで書込みを達成するに好
適な液晶素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a light beam writing liquid crystal device, and particularly to a liquid crystal device suitable for achieving writing with low light beam power.
従来の液晶素子の構成は、例えば“Absorbing
Films for Reflective Laser Beam Addressed，
Thermally Activated Liquid Crystal Cell”，
IBM Thchnical Disclosure Bulletin，Vol.18，
No.11，p3776，April 1976に示されている。その
内容は第１図に示したように、２枚のガラス基板
１，２により熱的に励起され得る液晶材料３（例
えばスメクチツクＡ相液晶など）をサンドイツチ
状に封入した構成になつている。また書込み側の
ガラス基板２の内側には、光ビームであるレーザ
ビームＬのエネルギーを吸収して発熱させる熱吸
収膜４及び投射光を反射する反射膜５が設けられ
ている。
The configuration of conventional liquid crystal elements is, for example, “Absorbing
Films for Reflective Laser Beam Addressed，
Thermally Activated Liquid Crystal Cell”
IBM Thchnical Disclosure Bulletin, Vol.18,
No.11, p3776, April 1976. As shown in FIG. 1, the structure is such that a liquid crystal material 3 (for example, Smectic A-phase liquid crystal) that can be thermally excited is sealed in a sandwich-like structure by two glass substrates 1 and 2. Further, on the inside of the glass substrate 2 on the writing side, there are provided a heat absorbing film 4 that absorbs the energy of the laser beam L, which is a light beam, and generates heat, and a reflective film 5 that reflects the projected light.
さらに、ガラス基板１の内面には液晶材料に電
界を印加する目的で透明電極６が設けられてい
る。なお、電界を印加するための他方の電極とし
て、導電体である反射膜５を利用する。 Furthermore, a transparent electrode 6 is provided on the inner surface of the glass substrate 1 for the purpose of applying an electric field to the liquid crystal material. Note that the reflective film 5, which is a conductor, is used as the other electrode for applying an electric field.
このような構成の液晶素子を用いると、書込み
用レーザビームのエネルギーは、熱吸収膜により
吸収されて発熱し、液晶材料を昇温せしめ、液晶
材料を熱励起して配向方向が変化して画像や文字
の書込みが達成できるが、このときより少ないレ
ーザパワーで上記機能を達成するためには、熱吸
収膜の吸収効率を大きくすることが最も重要であ
る。 When a liquid crystal element with such a configuration is used, the energy of the writing laser beam is absorbed by the heat absorption film and generates heat, raising the temperature of the liquid crystal material, thermally exciting the liquid crystal material, and changing the alignment direction to create an image. However, in order to achieve the above function with less laser power, it is most important to increase the absorption efficiency of the heat absorption film.
上記文献中には、熱吸収膜としてゲルマニウム
の薄膜（300―3000Å）を用いると65―80％の吸
収効率、色素を混入したポリマ（１―2μm）を用
いると90％の吸収効率を達成すると示されてい
る。 The above literature states that when a germanium thin film (300-3000 Å) is used as a heat absorption film, an absorption efficiency of 65-80% is achieved, and when a dye-mixed polymer (1-2 μm) is used, an absorption efficiency of 90% is achieved. It is shown.
また、他の文献“Low Power Laser―
Addressed Liquid Crrystal Projection Display
Device”，IBM Technical Disclosure Bulletin，
Vol.24，No.３，pp1570―1572，August 1981に
は、熱吸収膜にCr（300Å）を用いることが示さ
れている。 In addition, other documents “Low Power Laser―
Addressed Liquid Crystal Projection Display
Device”, IBM Technical Disclosure Bulletin,
Vol. 24, No. 3, pp 1570-1572, August 1981 describes the use of Cr (300 Å) for the heat absorption film.
しかし、これらに見られる熱吸収膜では90％を
越す吸収効率を実現することが不可能であつた。 However, it has been impossible to achieve an absorption efficiency of over 90% with the heat absorption films found in these.
発明の目的は、熱吸収膜の吸収効率を増大し
て、より少ない光ビームパワーでの書込み、ある
いは高速度の書込みを達成し得る液晶素子を提供
するにある。
An object of the invention is to provide a liquid crystal element that can achieve writing with less light beam power or high speed writing by increasing the absorption efficiency of a heat absorption film.
本発明は、熱吸収膜材料としてCr2O3を用いる
ことにより、光ビームのエネルギーを効率よく吸
収できるようにしたことを特徴としている。
The present invention is characterized in that the energy of the light beam can be efficiently absorbed by using Cr 2 O 3 as the heat-absorbing film material.
以下、本発明の一実施例を第２図により説明す
る。第２図は液晶表示素子の断面構造を示してお
り、対向面に透明電極２６が形成されるガラス基
板２１、対向面に熱吸収膜２４、熱吸収膜２４の
表面に設けられる反射膜２５が形成されるガラス
基板２２を対向させ、ガラス基板２１，２２の間
にスメクチツク液晶を保持する。なお、熱吸収膜
２４はCr2O3の蒸着膜（500―3000Å）、反射膜２
５はAlの蒸着膜（500―1000Å）を用いる。ま
た、透明電極２６としてインジウム―スズ酸化物
を用いている。さらに液晶分子の初期配向を定め
るため、液晶材料２３の界面は、本実施例では垂
直配向処理がなされているが、水平配向処理であ
つても本発明は適用できる。
An embodiment of the present invention will be described below with reference to FIG. FIG. 2 shows a cross-sectional structure of a liquid crystal display element, which includes a glass substrate 21 on which a transparent electrode 26 is formed on the opposing surface, a heat absorption film 24 on the opposing surface, and a reflective film 25 provided on the surface of the heat absorption film 24. The glass substrates 22 to be formed are made to face each other, and a smectic liquid crystal is held between the glass substrates 21 and 22. Note that the heat absorption film 24 is a vapor deposited film of Cr 2 O 3 (500-3000 Å), and a reflective film 2
No. 5 uses a vapor-deposited Al film (500-1000 Å). Furthermore, indium-tin oxide is used as the transparent electrode 26. Further, in order to determine the initial orientation of the liquid crystal molecules, the interface of the liquid crystal material 23 is subjected to vertical alignment treatment in this embodiment, but the present invention can also be applied to horizontal alignment treatment.
このような構成の液晶素子では、1.06μmの波
長で発振するYAGレーザよりの光ビームである
レーザビームＬを96％吸収することを本発明者等
は確認した。また本発明者等が実際に書込み実験
を行なつたところ、書込みに必要なレーザ照射時
間は１点り110msとなり、前述文献に開示されて
いるCrを熱吸収膜として用いた素子を製作して
同一条件で書込んだ場合の最小書込み時間にくら
べ約半分になることを確認した。 The inventors have confirmed that a liquid crystal element having such a configuration absorbs 96% of the laser beam L, which is a light beam from a YAG laser that oscillates at a wavelength of 1.06 μm. In addition, when the present inventors actually conducted a writing experiment, the laser irradiation time required for writing was 110 ms per point, and the device fabricated using Cr as a heat absorption film disclosed in the above-mentioned document was found. It was confirmed that the minimum writing time was approximately half that of writing under the same conditions.
なお、本発明者等は上記実験を素子面で約
10mWのレーザパワーを有する書込み系を用いて
行ない、また液晶材料としてシアノビフエニル系
スメクチツク液晶（Ｓ―１；BDH社製）を用い
た。 In addition, the inventors conducted the above experiment with approximately
This was carried out using a writing system with a laser power of 10 mW, and a cyanobiphenyl smectic liquid crystal (S-1; manufactured by BDH) was used as the liquid crystal material.
さらに第３図に示すように、書込み側ガラス基
板３１の表面にレーザ光の波長に合わせた反射防
止膜３２を設けることによつて数％程度の反射損
失が低減され、レーザエネルギーの利用率が向上
する。 Furthermore, as shown in FIG. 3, by providing an anti-reflection film 32 on the surface of the write-side glass substrate 31 that matches the wavelength of the laser beam, reflection loss is reduced by several percent, and the utilization rate of laser energy is increased. improves.
以上述べた実施例に於いては、熱吸収膜の表面
に反射膜を設けているが、熱吸収膜が電界を印加
する電極を兼ね、Alの反射膜を設けなくとも良
い。 In the embodiments described above, a reflective film is provided on the surface of the heat absorbing film, but the heat absorbing film also serves as an electrode for applying an electric field, and the reflective film of Al may not be provided.
本発明によれば、熱吸収膜による光ビームエネ
ルギーの吸収効率が増大するので、少ない光ビー
ムパワーによる書込み、あるいは書込み速度の向
上が達成できる。
According to the present invention, since the absorption efficiency of light beam energy by the heat absorption film is increased, writing with less light beam power or improvement in writing speed can be achieved.
第１図は、従来の液晶素子の断面図、第２図は
本発明による液晶素子の一実施例の断面図、また
第３図は本発明による液晶素子の他の一実施例の
書込み側ガラス基板の断面図である。
２１，２２……ガラス基板、２３……スメクチ
ツク液晶、２４……熱吸収膜、２５……反射膜、
２６……透明電極、３１……書込み側ガラス基
板、３２……反射防止膜。
FIG. 1 is a cross-sectional view of a conventional liquid crystal element, FIG. 2 is a cross-sectional view of an embodiment of a liquid crystal element according to the present invention, and FIG. 3 is a write-side glass of another embodiment of a liquid crystal element according to the present invention. FIG. 3 is a cross-sectional view of the substrate. 21, 22...Glass substrate, 23...Smectic liquid crystal, 24...Heat absorption film, 25...Reflection film,
26...Transparent electrode, 31...Writing side glass substrate, 32...Antireflection film.
Claims (1)
れる一方の基板と、対向面の少なくとも一部に熱
吸収膜が形成される他方の基板とを対向させ、上
記一方の基板と上記他方の基板との間に液晶を保
持し、上記熱吸収膜に光ビームを照射して上記液
晶の配向方向を変化させるものに於いて、上記熱
吸収膜は酸化クロムによつて形成されることを特
徴とする液晶素子。 ２ 特許請求の範囲第１項に於いて、上記熱吸収
膜の表面に反射膜を設けることを特徴とする液晶
素子。 ３ 特許請求の範囲第２項に於いて、上記反射膜
はアルミニウム膜であることを特徴とする液晶素
子。 ４ 特許請求の範囲第１項または第２項に於い
て、上記他方の基板の非対向面に反射防止膜を設
けることを特徴とする液晶素子。 ５ 特許請求の範囲第１項に於いて、上記液晶は
スメクチツク液晶であることを特徴とする液晶素
子。[Claims] 1. One substrate on which a transparent electrode is formed on at least a portion of the opposing surface and the other substrate on which a heat absorption film is formed on at least a portion of the opposing surface are placed facing each other, and In the device in which a liquid crystal is held between a substrate and the other substrate and the alignment direction of the liquid crystal is changed by irradiating the heat absorption film with a light beam, the heat absorption film is formed of chromium oxide. A liquid crystal element characterized by: 2. A liquid crystal element according to claim 1, characterized in that a reflective film is provided on the surface of the heat absorbing film. 3. The liquid crystal element according to claim 2, wherein the reflective film is an aluminum film. 4. The liquid crystal element according to claim 1 or 2, characterized in that an antireflection film is provided on the non-opposed surface of the other substrate. 5. The liquid crystal element according to claim 1, wherein the liquid crystal is a smectic liquid crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57211312A JPS59101622A (en) | 1982-12-03 | 1982-12-03 | Liquid crystal element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57211312A JPS59101622A (en) | 1982-12-03 | 1982-12-03 | Liquid crystal element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59101622A JPS59101622A (en) | 1984-06-12 |
| JPH0213286B2 true JPH0213286B2 (en) | 1990-04-03 |
Family
ID=16603850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57211312A Granted JPS59101622A (en) | 1982-12-03 | 1982-12-03 | Liquid crystal element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59101622A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61295530A (en) * | 1985-06-24 | 1986-12-26 | Semiconductor Energy Lab Co Ltd | Optical disk device with liquid crystal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57120235A (en) * | 1981-12-04 | 1982-10-30 | Yokogawa Hewlett Packard Ltd | Storage device |
-
1982
- 1982-12-03 JP JP57211312A patent/JPS59101622A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57120235A (en) * | 1981-12-04 | 1982-10-30 | Yokogawa Hewlett Packard Ltd | Storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59101622A (en) | 1984-06-12 |
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