JPH0212817A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH0212817A JPH0212817A JP16404088A JP16404088A JPH0212817A JP H0212817 A JPH0212817 A JP H0212817A JP 16404088 A JP16404088 A JP 16404088A JP 16404088 A JP16404088 A JP 16404088A JP H0212817 A JPH0212817 A JP H0212817A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- dry etching
- gaas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000001312 dry etching Methods 0.000 title claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 18
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 16
- 150000002367 halogens Chemical class 0.000 claims abstract description 16
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000009257 reactivity Effects 0.000 claims abstract description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- -1 bromine compound Chemical class 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 35
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 18
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 abstract description 3
- 235000019404 dichlorodifluoromethane Nutrition 0.000 abstract description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 16
- 230000005669 field effect Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 4
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- BAPZCSMFCUVUHW-UHFFFAOYSA-N dichloro(fluoro)methane Chemical compound F[C](Cl)Cl BAPZCSMFCUVUHW-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体装置の製造方法に係わり、特にペテロ構
造を有する半導体装置のドライエツチング方法に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of dry etching a semiconductor device having a Peter structure.
（従来の技術）
近年、特にペテロ接合材料を用いた化合物半導体装置の
研究開発が盛んになっている。一般に、ペテロ接合を含
む化合物半導体装置の製造工程で用いるドライエ乙チン
グにおいては、高選択性、高均一性及び低損傷ドライエ
ツチング技術が重要である。従来例えばＡｌＧａＡｓと
ＧａＡｓからなる半導体結晶において、ＧａＡｓを選択
的に除去する方法として「信学技報」、第８７巻、２２
５号（１９８７）１頁に示されているようにＣＣｌ２Ｆ
２とＨｅからなる混合ガスによる反応性イオンエツチン
グを用いた方法がある。この場合、ＣＣｌ２Ｆ２の分圧
とＨｅの分圧の圧力比は１対１である。(Prior Art) In recent years, research and development of compound semiconductor devices using Peter junction materials has been particularly active. Generally, in dry etching used in the manufacturing process of compound semiconductor devices including Peter junctions, high selectivity, high uniformity, and low damage dry etching techniques are important. Conventionally, for example, a method for selectively removing GaAs from a semiconductor crystal made of AlGaAs and GaAs has been described in "IEICE Technical Report", Vol. 87, 22.
No. 5 (1987), p. 1, CCl2F
There is a method using reactive ion etching using a mixed gas of 2 and He. In this case, the pressure ratio between the partial pressure of CCl2F2 and the partial pressure of He is 1:1.
（発明が解決しようとする課題）
前記従来の半導体の製造方法では、ＧａＡｓのエツチン
グ速度を高めるためにエツチング中の高周波エネルギー
を高くする必要があるが、この場合、ＡｌＧａＡｓのエ
ツチング速度も同時に上昇するため、ＧａＡｓとＡｌＧ
ａＡｓのエツチング選択比が低下し、所望のＧａＡｓの
選択エツチングの制御性が低下する問題がある。また、
エツチング中の高周波エネルギーを高くするとエツチン
グ領域直下の結晶内で欠陥が生じてしよい、素子特性を
劣化させ、しかも信頼性を損ねてしまう問題がある。(Problems to be Solved by the Invention) In the conventional semiconductor manufacturing method described above, it is necessary to increase the high frequency energy during etching in order to increase the etching rate of GaAs, but in this case, the etching rate of AlGaAs also increases at the same time. Therefore, GaAs and AlG
There is a problem that the etching selectivity of aAs decreases and the controllability of desired selective etching of GaAs decreases. Also,
If the high-frequency energy during etching is increased, defects may occur within the crystal immediately below the etching region, deteriorating device characteristics and further impairing reliability.
本発明の目的は、このような問題を解決し、選択性が高
く高均一、かつ低損傷のドライエツチング方法を提供す
ることにある。An object of the present invention is to solve these problems and provide a dry etching method with high selectivity, high uniformity, and low damage.
（問題を解決するだめの手段）
上記目的を達成するために基板上に第１の材料と第２の
材料が設けてあり、これらの材料に対するエツチング用
ガスの反応性の違いを利用して選択的に材料を除去する
ドライエツチング方法において、エツチング用ガスとし
て塩素もしくは臭素の化合物から構成されるハロゲンガ
スと不活性ガスを含み、かつハロゲンガスの分圧は不活
性ガスの分圧より大きいガスを用いることを特徴とする
ドライエツチング方法を提供するものである。(Another means to solve the problem) In order to achieve the above object, a first material and a second material are provided on the substrate, and the etching gas is selected based on the difference in reactivity of the etching gas to these materials. In the dry etching method, which removes material at a constant rate, the etching gas contains a halogen gas consisting of a chlorine or bromine compound and an inert gas, and the partial pressure of the halogen gas is greater than the partial pressure of the inert gas. The present invention provides a dry etching method characterized in that it is used.
また、本発明の他のドライエツチング方法としてはエツ
チング用ガスとしてＳＦ６と塩素もしくは臭素の化合物
から構成されるハロゲンガスを含むことを特徴とするガ
スを用いたドライエツチング方法を提供するものである
。Further, as another dry etching method of the present invention, there is provided a dry etching method using a gas characterized in that the etching gas contains a halogen gas composed of SF6 and a compound of chlorine or bromine.
（作用）
本発明のドライエツチング方法によれば、例えば、ＣＩ
もしくはＢｒの化合物からなるハロゲンガスと不活性ガ
スとの混合ガスをエツチングとして用いる場合、不活性
ガスの分圧よりもハロゲンガスの分圧を大きくすること
により、ガスとの反応性によるＧａＡｓのエツチングが
高められるため、ＧａＡｓ 仁ＡｌＧａＡｓのエツチン
グの選択比を向上でき、高制御な化合物半導体の選択エ
ツチングが行える。また、反応性エツチングが主体とな
るため、ＧａＡｓのエツチング速度がエツチング中の高
周波エネルギーに支配されにくくなり、結晶の欠陥発生
を低減できる。従って、信頼性の高い半導体装置が再現
性よく高歩留まりで実現できる。さらに望ましくは不活
性ガスとして質量の軽いＨｅガスなどを用いることによ
り、エツチングによる結晶の損傷を抑制できる。ハロゲ
ンガスとしてはＣ１もしくはＢｒの化合物であるＣＣｌ
２Ｆ２、ＣＣｌ４．５ｉＣ１４、ＣＢｒＦ３などを用い
ることができる。また、他のエツチング用ガスとしては
これらのハロゲンガスとＳＦ６の混合ガスを用いること
ができる。ＳＦ６は、Ｆラジカルを生成し、このＦラジ
カルがＡｌＧａＡｓに作用して表面でＡｌＦ３を形成す
る。このため、ＡｌＧａＡｓのエツチングが抑制され、
ＱａＡｓとの選択性が向上できる。(Function) According to the dry etching method of the present invention, for example, CI
Alternatively, when a mixed gas of a halogen gas consisting of a Br compound and an inert gas is used for etching, the partial pressure of the halogen gas is made larger than the partial pressure of the inert gas, thereby etching GaAs due to its reactivity with the gas. Since the etching rate is increased, the etching selectivity between GaAs and AlGaAs can be improved, and highly controlled selective etching of compound semiconductors can be performed. Furthermore, since reactive etching is the main method, the etching rate of GaAs is less likely to be dominated by high frequency energy during etching, and the occurrence of defects in the crystal can be reduced. Therefore, highly reliable semiconductor devices can be realized with good reproducibility and high yield. Furthermore, damage to the crystal due to etching can be suppressed by desirably using He gas, which has a light mass, as the inert gas. The halogen gas is CCl, which is a compound of C1 or Br.
2F2, CCl4.5iC14, CBrF3, etc. can be used. Further, as another etching gas, a mixed gas of these halogen gases and SF6 can be used. SF6 generates F radicals, which act on AlGaAs to form AlF3 on the surface. Therefore, etching of AlGaAs is suppressed,
Selectivity with QaAs can be improved.
（実施例１） 次に本発明の実施例について図面を参照して説明する。(Example 1) Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ）から第１図（ｅ）は、本発明の半導体装置
の製造方法の一実施例を説明するために示した半導体装
置の工程ごとの要部構造断面図である。FIGS. 1(a) to 1(e) are cross-sectional views of the main part structure of each step of a semiconductor device shown for explaining one embodiment of the method of manufacturing a semiconductor device of the present invention.
まず、第１図（ａ）に示すように半絶縁性ＧａＡｓ基板
１ 上 に 第１ のＧａＡｓ層２ を５００ＯＡ 、
Ｓｉ を２Ｘ１０１８ａｍ ”ドーピングしたＮ型
ＧａＡｓ層３を１００Ａ、第１のＡｌＧａＡｓ層４を２
００Ａ、第２のＧａＡｓ層５を５０Ａ第２のＡｌＧａＡ
ｓ層６を５０Ａ、第３のＧａＡｓ層７を２０ＯＡを連続
的にエピタキシャル成長する。First, as shown in FIG. 1(a), a first GaAs layer 2 is deposited at 500 OA on a semi-insulating GaAs substrate 1.
The N-type GaAs layer 3 doped with 2×1018 am of Si was doped with 100 A, and the first AlGaAs layer 4 was doped with 2
00A, the second GaAs layer 5 is 50A second AlGaA
The s-layer 6 is epitaxially grown to a thickness of 50 Å, and the third GaAs layer 7 is epitaxially grown to a thickness of 20 OA.
次に第１図（ｂ）に示すように、一部の領域の前記第３
のＧａＡｓ層７をＣＣＩ。Ｆ２とＨｅの混合ガスを用い
て反応性ドライエツチング法により、選択的に除去する
。この場合、ＣＣｌ２Ｆ２とＨｅの圧力比は２列１、ガ
ス圧力は１０Ｐａである。この条件下においては、Ｇａ
ＡｓとＡｌＧａＡｓのエツチングの選択比は約４０００
と極めて大きい。ＡｌＧａＡｓ中のＡｌの組成比は１０
％以上あれば極めて高い選択比が得られる。Next, as shown in FIG. 1(b), the third
The GaAs layer 7 is CCI. It is selectively removed by a reactive dry etching method using a mixed gas of F2 and He. In this case, the pressure ratio of CCl2F2 and He is 2 rows 1, and the gas pressure is 10 Pa. Under this condition, Ga
The etching selectivity between As and AlGaAs is approximately 4000.
It's extremely large. The composition ratio of Al in AlGaAs is 10
% or more, an extremely high selectivity can be obtained.
次に第１図（ｅ）に示すようにゲート電極８をＷＳｉを
用いて形成し、第１図（ｄ）に示すように前記ゲート電
極８をマスクとしてＳｉを１５０ＫｅＶ、 ｌＸｌ０”
’ｃｍ ”注入しその後８００°Ｃで熱処理を行いコン
タクト領域９を形成し、続いて第１図（ｅ）に示ずよう
にオーミック電極１０をＡｕＧｅ／Ｎｉを用いて形成す
る。Next, as shown in FIG. 1(e), a gate electrode 8 is formed using WSi, and as shown in FIG. 1(d), using the gate electrode 8 as a mask, Si is heated at 150 KeV and lXl0''.
cm'' implanted and then heat treated at 800° C. to form a contact region 9, and then, as shown in FIG. 1(e), an ohmic electrode 10 is formed using AuGe/Ni.
本実施例における２つの電界効果トランジスタのしきい
値電圧は、各々、約０．２ｖ及び約−〇、６ｖであり、
各々のしきい値電圧の標準偏差は約２０ｍＶと良好であ
った。尚、前記エツチングガスの圧力が１０Ｐａ以下の
場合でも十分なエツチングの選択比をとることが可能で
ある。また、前記ハロゲンガスとしては、ＣＣ１□Ｆ２
の他に、ＣＣｌ４．５ＩＣ１４、ＣＢｒＦ３などのガス
を使用することも可能である。また、不活性ガスとして
はＨｅ以外の例えばＮｅ、 Ａｒでも構わない。The threshold voltages of the two field effect transistors in this example are approximately 0.2v and approximately -0.6v, respectively.
The standard deviation of each threshold voltage was about 20 mV, which was good. Incidentally, even when the pressure of the etching gas is 10 Pa or less, it is possible to obtain a sufficient etching selectivity. Further, as the halogen gas, CC1□F2
In addition, it is also possible to use gases such as CCl4.5IC14 and CBrF3. Furthermore, the inert gas may be other than He, such as Ne or Ar.
（実施例２）
第２図（ａ）から第２図（ｅ）は、本発明の半導体装置
の製造方法の一実施例を説明するために示した半導体装
置の工程ごとの要部構造断面図である。(Example 2) FIGS. 2(a) to 2(e) are cross-sectional views of the main part structure of each process of a semiconductor device shown for explaining one embodiment of the method for manufacturing a semiconductor device of the present invention. It is.
まず、第２図（ａ）に示すように半絶縁性ＧａＡｓ基板
１上 に 第１ のＧａＡｓ層２ を５００ＯＡ 、
Ｓｉ を２×１０１８ｃｍ−３ドーピングしたＮ型Ａ
ｌＧａＡｓ層３を１０ＯＡ、第１のＡｌＧａＡｓ層４を
２００Ａ、第２のＧａＡｓ層５を５０Ａ、第２のＡｌＧ
ａＡｓ層６を５０Ａ、第３のＧａＡｓ層７を２０ＯＡを
連続的にエピタキシャル成長する。First, as shown in FIG. 2(a), a first GaAs layer 2 is deposited at 500 OA on a semi-insulating GaAs substrate 1.
N-type A doped with 2×1018 cm-3 of Si
The lGaAs layer 3 is 10OA, the first AlGaAs layer 4 is 200A, the second GaAs layer 5 is 50A, and the second AlG
The aAs layer 6 is epitaxially grown to a thickness of 50 Å, and the third GaAs layer 7 is epitaxially grown to a thickness of 20 Å.
次に第２図（ｂ）に示すように第１の電界効果トラ６ン
ジスタのゲート領域の前記Ｎ型ＧａＡｓ層１２をＣＣｌ
３ＦとＳＦ６の混合ガスを用いて反応性ドライエツチン
グ法により、選択的に除去すｐｏこの場合、ＣＣｌ３Ｆ
とＳＦ６の圧力比は２対１、ガス圧力は１０Ｐａである
。その後、前記開口部の第３のＡｌＧａＡｓ層１１をフ
ッ酸を使用して除去する。Next, as shown in FIG. 2(b), the N-type GaAs layer 12 in the gate region of the first field effect transistor 6 is coated with CCl.
In this case, CCl3F is selectively removed by a reactive dry etching method using a mixed gas of 3F and SF6.
The pressure ratio of SF6 and SF6 is 2:1, and the gas pressure is 10 Pa. Thereafter, the third AlGaAs layer 11 in the opening is removed using hydrofluoric acid.
次に第２図（ｅ）に示すように第２の電界効果トランジ
スタのゲート領域のレジスト１３を開口し、再びＣＣｌ
３ＦとＳＦ６の混合ガスを用いて反応性ドライエツチン
グ法により、第１の電界効果トランジスタは、第３のＧ
ａＡｓ層を、第２の電界効果トランジスタは第１のＮ型
ＧａＡｓ層を各々選択的に除去する。その場合、ガス圧
力比及びガス圧力は、前記反応性ドライエツチングの条
件と同様である。その後、第２図（ｄ）に示すようにＡ
Ｉを蒸着し、リフトオフ法によりゲート電極８を形成す
る。次に第２図（ｅ）に示すようにＡｕＧｅ／Ｎｉを用
いたオーミック電極１０を形成することにより同一基板
内に２種類のしきい値電圧を有する電界効果トランジス
タが形成される。ＣＣｌ３ＦとＳＦの圧力比はＳＦ６か
ら解離したＦラジカルがＡｌＧａＡｓ表面で、ＡｌＦ３
を生成し、ＡｌＧａＡｓエツチングを抑制する。このた
め選択性をＣＣｌ３ＦとＳＦ６の圧力比としては、実施
例１で説明したハロゲンガスと不活性ガスの場合とは異
なり、ＣＣｌ３Ｆの比が多いことは必要ではない。但し
、ＳＦ６の比率を多くし過ぎるとＡｓ抜けが起きるので
、望ましくはＳＦ６の比率は５０％以下が良い。またＣ
Ｃ１３ＦＩＳＦ６のみでなく、ＣＣ１４ＦＩＳＦ６．５
ｉＣ１４１ＳＦ６、ＣＢｒＦ３ノＳＦ６などの組み合せ
でも良い。Next, as shown in FIG. 2(e), the resist 13 in the gate region of the second field effect transistor is opened, and the CCl
By a reactive dry etching method using a mixed gas of 3F and SF6, the first field effect transistor is etched by the third G
The aAs layer is selectively removed from the second field effect transistor, and the first N-type GaAs layer is selectively removed from the second field effect transistor. In that case, the gas pressure ratio and gas pressure are the same as the conditions for the above-mentioned reactive dry etching. After that, as shown in FIG. 2(d),
A gate electrode 8 is formed by vapor depositing I and using a lift-off method. Next, as shown in FIG. 2(e), by forming an ohmic electrode 10 using AuGe/Ni, field effect transistors having two types of threshold voltages are formed within the same substrate. The pressure ratio of CCl3F and SF is such that F radicals dissociated from SF6 are on the AlGaAs surface, and AlF3
and suppresses AlGaAs etching. Therefore, when determining the selectivity as the pressure ratio of CCl3F and SF6, unlike the case of halogen gas and inert gas explained in Example 1, it is not necessary that the ratio of CCl3F is large. However, if the ratio of SF6 is too high, As dropout will occur, so desirably the ratio of SF6 is 50% or less. Also C
Not only C13FISF6 but also CC14FISF6.5
A combination of iC141SF6, CBrF3-SF6, etc. may also be used.
本実施例において、得られた素子のしきい値電圧の標準
偏差は、約２０ｍＶと良好であり、反応性イオンエツチ
ングに伴う損傷も極めて小さかった。In this example, the standard deviation of the threshold voltage of the obtained device was good, about 20 mV, and damage caused by reactive ion etching was extremely small.
以上の実施例においてはＡｌＧａＡｓ／ＧａＡｓについ
て選択比の高いエツチングが行える例を示した。材料は
これらに限らず、ＩｎＰ／ＧａＡｓあるいはＧａＰ／Ｓ
ｉ 。In the above embodiments, an example was shown in which etching with a high selectivity of AlGaAs/GaAs can be performed. The material is not limited to these, but may include InP/GaAs or GaP/S.
i.
Ａｌ／ＧａＡｓなと他の組み合せであっても構わない。Other combinations such as Al/GaAs may also be used.
（発明の効果）
以上説明したように本発明は、高均一かつ低損傷の化合
物半導体結晶の選択ドライエツチングが可能なため、制
御性及び信頼性に優れた半導体装置を歩留まりよく実現
できる効果を有する。(Effects of the Invention) As explained above, the present invention enables selective dry etching of compound semiconductor crystals with high uniformity and low damage, and has the effect of realizing semiconductor devices with excellent controllability and reliability at a high yield. .
第１図（ａ）から第１図（ｅ）は、本発明の一実施例を
説明するために示した半導体装置の工程ごとの要部構造
断面図で、第２図（ａ）から第２図（ｅ）は本発明の他
の実施例を説明するために示した半導体装置の工程ごと
の要部構造断面図である。
１・・・半絶縁性ＧａＡｓ基板
２・・・第１のＧａＡｓ層
３・・・第１のＮ型ＧａＡｓ層
４・・・第１のＡｌＧａＡｓ層
５・・・第２のＧａＡｓ層
６・・・第２のＡｌＧａＡｓ層
７・・・第３のＧａＡｓ層
８・・・ゲート電極
９・・・コンタクト領域
１０・・・オーミック電極
１１・・・第３のＡｌＧａＡ４
１２・・・第２のＮ型ＧａＡｓ層
１３・・・第１のＮ型ＡｌＧａＡｓ層FIG. 1(a) to FIG. 1(e) are cross-sectional views of the main part structure for each process of a semiconductor device shown for explaining one embodiment of the present invention, and FIG. 2(a) to FIG. FIG. 3(e) is a cross-sectional view of the structure of a main part of a semiconductor device shown in order to explain another embodiment of the present invention for each step. 1... Semi-insulating GaAs substrate 2... First GaAs layer 3... First N-type GaAs layer 4... First AlGaAs layer 5... Second GaAs layer 6...・Second AlGaAs layer 7...Third GaAs layer 8...Gate electrode 9...Contact region 10...Ohmic electrode 11...Third AlGaA4 12...Second N type GaAs layer 13...first N-type AlGaAs layer
Claims (2)
けてあり、これらの材料に対するエッチング用ガスの反
応性の違いを利用して選択的に材料を除去するドライエ
ッチング方法において、エッチング用ガスとして塩素も
しくは臭素の化合物から構成されるハロゲンガスと不活
性ガスを含み、かつハロゲンガスの分圧は不活性ガスの
分圧より大きいガスを用いることを特徴とするドライエ
ッチング方法。(1) In a dry etching method in which at least a first material and a second material are provided on a substrate and the materials are selectively removed by utilizing the difference in reactivity of an etching gas to these materials, etching is performed. 1. A dry etching method characterized in that a gas containing a halogen gas composed of a chlorine or bromine compound and an inert gas is used, and the partial pressure of the halogen gas is greater than the partial pressure of the inert gas.
けてあり、これらの材料に対するエッチング用ガスの反
応性の違いを利用して選択的に材料を除去するドライエ
ッチング方法において、エッチング用ガスとしてＳＦ＿
６と塩素もしくは臭素の化合物から構成されるハロゲン
ガスを含むガスを用いることを特徴とするドライエッチ
ング方法。(2) In a dry etching method in which at least a first material and a second material are provided on a substrate and the materials are selectively removed by utilizing the difference in reactivity of an etching gas to these materials, etching is performed. SF_ as a gas for
A dry etching method characterized by using a gas containing a halogen gas composed of a compound of 6 and chlorine or bromine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16404088A JPH0212817A (en) | 1988-06-29 | 1988-06-29 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16404088A JPH0212817A (en) | 1988-06-29 | 1988-06-29 | Dry etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0212817A true JPH0212817A (en) | 1990-01-17 |
Family
ID=15785660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16404088A Pending JPH0212817A (en) | 1988-06-29 | 1988-06-29 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0212817A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04221825A (en) * | 1990-12-24 | 1992-08-12 | Nec Corp | Selective dry etching |
| US5355342A (en) * | 1992-04-27 | 1994-10-11 | Nec Corporation | Semiconductor memory device having multiple selector unit simultaneously selecting memory cells from memory cell blocks in diagnostic mode of operation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147122A (en) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | Dry etching method for compound semiconductor |
| JPS62156818A (en) * | 1985-12-28 | 1987-07-11 | Oki Electric Ind Co Ltd | Manufacture of semiconductor deice |
| JPS63164221A (en) * | 1986-09-22 | 1988-07-07 | インテル・コーポレーション | Plasma etching of tungsten |
| JPS63202028A (en) * | 1987-02-18 | 1988-08-22 | Hitachi Ltd | Treatment of amorphous silicon |
-
1988
- 1988-06-29 JP JP16404088A patent/JPH0212817A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147122A (en) * | 1982-02-26 | 1983-09-01 | Fujitsu Ltd | Dry etching method for compound semiconductor |
| JPS62156818A (en) * | 1985-12-28 | 1987-07-11 | Oki Electric Ind Co Ltd | Manufacture of semiconductor deice |
| JPS63164221A (en) * | 1986-09-22 | 1988-07-07 | インテル・コーポレーション | Plasma etching of tungsten |
| JPS63202028A (en) * | 1987-02-18 | 1988-08-22 | Hitachi Ltd | Treatment of amorphous silicon |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04221825A (en) * | 1990-12-24 | 1992-08-12 | Nec Corp | Selective dry etching |
| US5355342A (en) * | 1992-04-27 | 1994-10-11 | Nec Corporation | Semiconductor memory device having multiple selector unit simultaneously selecting memory cells from memory cell blocks in diagnostic mode of operation |
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