JPH021232B2 - - Google Patents
Info
- Publication number
- JPH021232B2 JPH021232B2 JP16952782A JP16952782A JPH021232B2 JP H021232 B2 JPH021232 B2 JP H021232B2 JP 16952782 A JP16952782 A JP 16952782A JP 16952782 A JP16952782 A JP 16952782A JP H021232 B2 JPH021232 B2 JP H021232B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- oxide film
- ions
- present
- capacitor electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- -1 oxygen ions Chemical class 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明は、酸化膜の形成方法、特に半導体装置
に用いるポリシリコン酸化膜の形成方法に係る。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method of forming an oxide film, particularly a method of forming a polysilicon oxide film used in a semiconductor device.
(2) 従来技術と問題点
第１図は１トランジスタ・１セルのダイナミツ
ク・メモリの１例を示すものである。例えば、ｐ
型シリコン基板１に、ドレイン２、絶縁膜３上の
ゲート４、ソース（反転層）５からなるトランジ
スタ（FET）と、キヤパシタ電極６、絶縁膜７、
反転層（キヤパシタ電極）５からなるキヤパシタ
とが形成され、これらでメモリ・セルが構成され
ている。ゲート４及びキヤパシタ電極６は普通に
はポリシリコンで形成され、これらの間に絶縁膜
８が存在するが、この絶縁膜８はキヤパシタ電極
６のポリシリコンを熱酸化して形成される。しか
し、最近、メモリ容量が64キロビツトから256キ
ロビツト、さらに１メガビツトへと増大するにつ
れて、セル寸法が小さくなり、絶縁膜も薄く形成
せざるを得ず、欠陥のない絶縁耐圧の大きい膜を
精度よく形成することが必要になつてきている。(2) Prior Art and Problems Figure 1 shows an example of a one-transistor, one-cell dynamic memory. For example, p
A transistor (FET) consisting of a drain 2, a gate 4 on an insulating film 3, a source (inversion layer) 5, a capacitor electrode 6, an insulating film 7,
A capacitor consisting of an inversion layer (capacitor electrode) 5 is formed, and a memory cell is constituted by these. The gate 4 and the capacitor electrode 6 are usually formed of polysilicon, and an insulating film 8 exists between them, and this insulating film 8 is formed by thermally oxidizing the polysilicon of the capacitor electrode 6. However, as memory capacity has recently increased from 64 kilobits to 256 kilobits and then to 1 megabit, cell dimensions have become smaller and insulating films have to be made thinner. It has become necessary to form
(3) 発明の目的
こうした従来技術に鑑み、本発明は、ポリシリ
コン酸化膜の耐圧を向上させることを目的とす
る。(3) Purpose of the Invention In view of these conventional techniques, the present invention aims to improve the withstand voltage of a polysilicon oxide film.
(4) 発明の構成
そして、上記目的を達成するために、本発明
は、多結晶シリコン層の表面部にイオン打込みを
行なつた後、酸素含有雰囲気中で熱処理して多結
晶シリコン層表面を良質な熱酸化膜に変換するこ
とを特徴とする熱酸化膜の形成方法を提供する。(4) Structure of the Invention In order to achieve the above object, the present invention implants ions into the surface of a polycrystalline silicon layer, and then heat-treats the surface of the polycrystalline silicon layer in an oxygen-containing atmosphere. Provided is a method for forming a thermal oxide film, which is characterized by converting the film into a high-quality thermal oxide film.
すなわち、本発明の方法では、従来のようにポ
リシリコンを熱酸化する以前に、先ずポリシリコ
ンにイオン打ち込みを行なう。このイオン打ち込
みは、ポリシリコンの結晶粒を微細化（アモルフ
アス化）し、続いて行なう熱酸化において、結晶
粒が大きいと酸化が結晶粒の内部までは進行しに
くいという不都合を軽減又は除去する。従つて、
イオン打ち込みを行なつたポリシリコンを熱酸化
すれば、イオン打ち込みなしの場合よりも、ポリ
シリコンがより容易に、より均一に酸化され、そ
してより緻密な酸化膜を与える。従つて、ポリシ
リコン酸化膜の耐圧も向上する。又、打ち込むイ
オンは酸素イオン（O+）、窒素イオン（N+）、ア
ルゴンイオン（Ar+）などのいずれでもよいが、
酸素イオン（O+）を用いれば、上記の効果に加
えて、打ち込まれた酸素イオンがポリシリコンの
内部における酸化を促進するので、より好ましい
結果を得ることができる。尚、イオン打ち込みの
時間は短時間で済むことはプロセス上都合がよ
い。 That is, in the method of the present invention, ions are first implanted into polysilicon before thermally oxidizing the polysilicon as in the conventional method. This ion implantation makes the crystal grains of polysilicon fine (amorphous), and reduces or eliminates the disadvantage that, in the subsequent thermal oxidation, if the crystal grains are large, oxidation is difficult to proceed to the inside of the crystal grains. Therefore,
Thermal oxidation of ion-implanted polysilicon oxidizes the polysilicon more easily, more uniformly, and provides a denser oxide film than without ion implantation. Therefore, the breakdown voltage of the polysilicon oxide film is also improved. In addition, the ions to be implanted may be oxygen ions (O + ), nitrogen ions (N + ), argon ions (Ar + ), etc.
If oxygen ions (O + ) are used, in addition to the above effects, the implanted oxygen ions promote oxidation inside the polysilicon, so more favorable results can be obtained. Note that it is convenient for the process that the ion implantation can be performed in a short time.
(5) 発明の実施例
前に述べた１トランジスタ・１セルのダイナミ
ツク・メモリにおけるキヤパシタ電極６とゲート
４間のポリシリコン酸化膜８の形成に、本発明の
方法を適用する（第２図〜第４図参照）。シリコ
ン基板又はウエーハ１表面に絶縁膜７を形成し、
その上にポリシリコンを厚さ4000Åに被着し、拡
散処理でシート抵抗を調整後、パターニングし
て、キヤパシタ電極６を形成する。それから、
O+，N+等をドーズ量1018／cm3、打ち込みエネル
ギー10〜100keVで、深さ数100Å程度に（層10）
イオン打ち込みする。次いで、1100℃の温度で熱
酸化（O2）し、厚さ1000〜3000Åの酸化膜８を
形成する。その後通常の工程でダイナミツク・メ
メモリを作成する。こうして形成されるポリシリ
コン酸化膜８は従来よりもより均質でより緻密な
酸化膜を与え、耐圧も大きく向上する。(5) Embodiments of the Invention The method of the present invention is applied to the formation of the polysilicon oxide film 8 between the capacitor electrode 6 and the gate 4 in the one-transistor, one-cell dynamic memory described above (see FIGS. (See Figure 4). Forming an insulating film 7 on the surface of the silicon substrate or wafer 1,
Polysilicon is deposited thereon to a thickness of 4000 Å, the sheet resistance is adjusted by diffusion treatment, and then patterned to form the capacitor electrode 6. after that,
O + , N +, etc. are implanted at a dose of 10 18 /cm 3 and an implantation energy of 10 to 100 keV to a depth of about 100 Å (layer 10).
Implant ions. Next, thermal oxidation (O 2 ) is performed at a temperature of 1100° C. to form an oxide film 8 with a thickness of 1000 to 3000 Å. Dynamic memory is then created using the normal process. The polysilicon oxide film 8 thus formed provides a more homogeneous and denser oxide film than the conventional one, and the withstand voltage is also greatly improved.
以上はダイナミツク・メモリのポリシリコン層
間絶縁用の酸化膜形成に本発明を適用した例であ
るが、本発明はスタツクドキヤパシタの酸化膜形
成その他にも適用できることは明らかである。 The above is an example in which the present invention is applied to the formation of an oxide film for insulation between polysilicon layers in a dynamic memory, but it is clear that the present invention can also be applied to the formation of an oxide film for stacked capacitors and other applications.
(6) 発明の効果
本発明に依ればポリシリコン熱酸化膜の耐圧を
向上させることが可能になる。(6) Effects of the Invention According to the present invention, it is possible to improve the breakdown voltage of a polysilicon thermal oxide film.
第１図はダイナミツク・メモリの断面図、第２
図から第４図は本発明の実施例を説明する工程順
の断面図である。
４：ゲート（ポリシリコン）、６：キヤパシタ
電極（ポリシリコン）、８：ポリシリコン酸化膜、
１０：イオン打ち込み層。
Figure 1 is a cross-sectional view of dynamic memory, Figure 2
FIGS. 4 to 4 are cross-sectional views in order of steps for explaining an embodiment of the present invention. 4: Gate (polysilicon), 6: Capacitor electrode (polysilicon), 8: Polysilicon oxide film,
10: Ion implantation layer.
Claims (1)
行なつた後、酸素含有雰囲気中で熱処理して多結
晶シリコン層表面を良質な熱酸化膜に変換するこ
とを特徴とする熱酸化膜の形成方法。1. A method for forming a thermal oxide film, which comprises implanting ions into the surface of a polycrystalline silicon layer, and then performing heat treatment in an oxygen-containing atmosphere to convert the surface of the polycrystalline silicon layer into a high-quality thermal oxide film. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16952782A JPS5964517A (en) | 1982-09-30 | 1982-09-30 | Formation of oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16952782A JPS5964517A (en) | 1982-09-30 | 1982-09-30 | Formation of oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5964517A JPS5964517A (en) | 1984-04-12 |
| JPH021232B2 true JPH021232B2 (en) | 1990-01-10 |
Family
ID=15888150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16952782A Granted JPS5964517A (en) | 1982-09-30 | 1982-09-30 | Formation of oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5964517A (en) |
-
1982
- 1982-09-30 JP JP16952782A patent/JPS5964517A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5964517A (en) | 1984-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6306742B1 (en) | Method for forming a high dielectric constant insulator in the fabrication of an integrated circuit | |
| US6087229A (en) | Composite semiconductor gate dielectrics | |
| JP2761685B2 (en) | Method for manufacturing semiconductor device | |
| US4447272A (en) | Method for fabricating MNOS structures utilizing hydrogen ion implantation | |
| JPS6016457A (en) | Stack cmos capable of self-aligning and method of producing same | |
| US4814291A (en) | Method of making devices having thin dielectric layers | |
| US6953722B2 (en) | Method for patterning ceramic layers | |
| JPH10135207A (en) | Formation of thin film by using n2o gas | |
| JPS6410107B2 (en) | ||
| JP3487407B2 (en) | Manufacturing method of capacitor | |
| US5569619A (en) | Method for forming a capacitor of a semiconductor memory cell | |
| TWI308378B (en) | Method for manufacturing a semiconductor device | |
| JP2624709B2 (en) | Method for manufacturing semiconductor device | |
| KR20020014095A (en) | Method for fabricating gate oxide film | |
| JP2671312B2 (en) | Method for manufacturing semiconductor device | |
| JPH021232B2 (en) | ||
| JPS61185950A (en) | Manufacture of semiconductor device | |
| JPH0656877B2 (en) | Method for producing tantalum oxide thin film | |
| JPS6261345A (en) | Manufacture of semiconductor device | |
| JP3033579B2 (en) | Manufacturing method of thin film transistor | |
| JP2710410B2 (en) | Method for manufacturing MOS semiconductor device | |
| JP3050989B2 (en) | Method for manufacturing semiconductor device | |
| JP2511852B2 (en) | Method for manufacturing semiconductor device | |
| JP3384439B2 (en) | Method for manufacturing semiconductor device | |
| JPS63200528A (en) | Manufacture of semiconductor device |