JPH02122584A - Semiconductor laser array and optical disk device - Google Patents
Semiconductor laser array and optical disk deviceInfo
- Publication number
- JPH02122584A JPH02122584A JP63276504A JP27650488A JPH02122584A JP H02122584 A JPH02122584 A JP H02122584A JP 63276504 A JP63276504 A JP 63276504A JP 27650488 A JP27650488 A JP 27650488A JP H02122584 A JPH02122584 A JP H02122584A
- Authority
- JP
- Japan
- Prior art keywords
- oscillation
- semiconductor laser
- laser array
- regions
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 title claims description 22
- 230000010355 oscillation Effects 0.000 claims abstract description 52
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 6
- 238000005253 cladding Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、動作時に均一な波長で発光する半導体レーザ
アレイと、この半導体レーザアレイを光源に用いた窩速
光ディスクに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor laser array that emits light at a uniform wavelength during operation, and a laser beam optical disc using this semiconductor laser array as a light source.
（従来の技術）
半導体レーザアレイを光源に用いて、その複数の出力を
同一トラック上に集光し、消去、記録、エラー検出のた
めの再生を分担して実行することにより記録速度の速い
光ディスク装置が実現できる。これまでに報告された独
立駆動型の半導体レーザアレイは、発振領域の構造・形
状が均一であった。第３図は、雑誌“Ａｐｐｌ、Ｐｈｙ
ｓ。(Prior art) Optical discs with high recording speeds are created by using a semiconductor laser array as a light source, focusing multiple outputs on the same track, and performing erasing, recording, and playback for error detection in a shared manner. The device can be realized. In the independently driven semiconductor laser arrays reported so far, the structure and shape of the oscillation region were uniform. Figure 3 shows the magazine “Appl, Phy”
s.
Ｌｅｔｔ、 、１９８２年４１巻１０４０〜１０４
２頁に記載された半導体レーザアレイの構造を示す断面
図である。１はｎ型ＧａＡｓ基板、２と１２はｎ型Ａｌ
ＧａＡｓクラッド層、１３はｎ型ＡｌＧａＡｓガイド層
、３はＡｌＧａＡｓ活性層、４はｐ型ＡｌＧａＡｓクラ
ッド層、１４はｐ型ＧａＡｓキャップ層、６と７はｐｆ
ｆｌ電極とｎ（！Ｉ＠＆、１５は絶縁膜を示している。Lett, 1982, 41, 1040-104.
FIG. 2 is a cross-sectional view showing the structure of the semiconductor laser array described on page 2. 1 is an n-type GaAs substrate, 2 and 12 are n-type Al
GaAs cladding layer, 13 is n-type AlGaAs guide layer, 3 is AlGaAs active layer, 4 is p-type AlGaAs cladding layer, 14 is p-type GaAs cap layer, 6 and 7 are pf
fl electrode and n(!I@&, 15 indicates an insulating film.
それぞれの発振領域の幅や各層の厚さは均一で、電流光
出力特性や発振波長はほぼ均−であった。The width of each oscillation region and the thickness of each layer were uniform, and the current-light output characteristics and oscillation wavelength were almost uniform.
（発明が解決しようとする課題）
半導体レーザアレイを光源に用いた上記光ディスク装置
では、２０〜３０ｍＷのレーザ端面出力で消去と記録を
、２〜３ｍＷの出力でエラー検出再生を行う、ところが
、発振波長は光出力に依存して変化するのに、従来の半
導体レーザアレイでは、発振領域の構造や形状が単一の
半導体レーザと同様に均一であったから、高出力で使用
する消去と記録用レーザの発振波長が、低出力で使用す
るエラー検出再生用レーザの発振波長に比べて数１０人
長くなる。このように、発振波長に違いがあると、消去
ビームと記録ビームとがエラー検出再生ビームに対して
焦点位置ずれを起こし、Ｓ／Ｎ特性やトラック間のタロ
ストーク特性が低下する。かくの如く、従来の半導体レ
ーザアレイには解決すべき課題があった。(Problems to be Solved by the Invention) In the above-mentioned optical disk device using a semiconductor laser array as a light source, erasing and recording are performed with a laser end face output of 20 to 30 mW, and error detection and reproduction is performed with a laser output of 2 to 3 mW. However, oscillation Although the wavelength changes depending on the optical output, in conventional semiconductor laser arrays, the structure and shape of the oscillation region was uniform like that of a single semiconductor laser. The oscillation wavelength of the laser is several tens of times longer than the oscillation wavelength of the error detection and reproduction laser used at low output. If there is a difference in the oscillation wavelength in this way, the erase beam and the recording beam cause a focal position shift with respect to the error detection reproduction beam, and the S/N characteristic and the inter-track Talostalk characteristic deteriorate. As described above, conventional semiconductor laser arrays have had problems that need to be solved.
本発明の目的は、上記従来の課題を解決した半導体レー
ザアレイとそれを光源に用いた高速光ディスク装置を提
供することにある。An object of the present invention is to provide a semiconductor laser array that solves the above-mentioned conventional problems and a high-speed optical disk device using the same as a light source.
（課題を解決するための手段）
本発明の半導体レーザアレイは、互いに独立に駆動され
る複数の発振領域を具備し、前記複数の発振領域には幅
か狭いものと幅が広いものとの少なくとも２つがあるこ
とを特徴とする。また本発明の光ディスク装置は、上記
半導体レーザアレイを光源とし、複数の出力ビームの同
一トラック上に並べて集光し、幅の狭い発振領域からの
光出力で消去または記録をし、幅の広い発振領域からの
光出力で再生をすることを特徴とする。(Means for Solving the Problems) A semiconductor laser array of the present invention includes a plurality of oscillation regions that are driven independently of each other, and the plurality of oscillation regions have at least one narrow width and one wide width. It is characterized by two things. Further, the optical disk device of the present invention uses the semiconductor laser array as a light source, condenses a plurality of output beams in line on the same track, erases or records with optical output from a narrow oscillation area, and oscillates a wide oscillation area. It is characterized by reproduction using the optical output from the area.
（作用）
半導体レーザの発振波長は、レーザ構造に依存する９発
振光に対して大きな吸収係数を持つ吸収層を発振領域近
傍に設け、発振モードの一部が損失を受けることで活性
層に平行な方向に実効的な屈折率導波機構を形成した半
導体レーザ構造では、発振領域の幅により発振モードの
受ける損失が異なり、闇値ゲインが異なることから発振
波長が影響を受ける０幅の狭い発振領域は、閾値ゲイン
が高く、発振に高い注入キャリア密度を必要とする。(Function) The oscillation wavelength of a semiconductor laser is determined by providing an absorption layer near the oscillation region that has a large absorption coefficient for the 9 oscillation light that depends on the laser structure, and by causing a loss in a part of the oscillation mode, the oscillation wavelength is parallel to the active layer. In a semiconductor laser structure in which an effective refractive index waveguide mechanism is formed in the direction of The region has a high threshold gain and requires high injected carrier density for oscillation.
注入キャリア密度が高くなるほど最大ゲインが得られる
点は高エネルギー化し、発振波長は短波長化する。この
発振波長の発＠領域幅依存性を利用して、幅による波長
差が出力の差による波長差を補うように、消去と記録に
使用する発振領域の幅を狭く、再生に使用する発振領域
の幅を広く設けたｍｅの半導体レーザアレイを作製でき
る。この半導体レーザアレイは、各発振領域が所定の光
出力で動作しているときに波長の揃ったビームを出力す
る。As the injected carrier density increases, the point where the maximum gain is obtained becomes higher in energy and the oscillation wavelength becomes shorter. Utilizing this dependence of the oscillation wavelength on oscillation@region width, the width of the oscillation region used for erasing and recording is narrowed, and the oscillation region used for reproduction is narrowed so that the wavelength difference due to the width compensates for the wavelength difference due to the difference in output. It is possible to fabricate a me semiconductor laser array with a wide width. This semiconductor laser array outputs beams with uniform wavelengths when each oscillation region operates with a predetermined optical output.
この半導体レーザアレイを光源に用いることにより、光
ディスク装置における消去ビームと記録ビームとのエラ
ー検出再生ビームに対する焦点付；りずれによるＳ／Ｎ
特性やトラック間クロストーク特性の低下を改善できる
。By using this semiconductor laser array as a light source, it is possible to detect errors between the erasing beam and the recording beam in an optical disk device.Focusing of the reproducing beam; S/N due to misalignment
It is possible to improve the deterioration of characteristics and inter-track crosstalk characteristics.
（実施例）
第１図は本発明の半導体レーザアレイの一実施例のＪ１
Ｍ造を示す断面図である。この図において１はｎ型Ｇａ
Ａｓ基板、２はｎ型ＡｌＧａＡｓクラッド層、３はＡｌ
ＧａＡｓ活性層、４はｎ型ＡｌＧａＡｓクラッド層、５
はｎ型ＧａＡｓブロック層、６はｐ側電極、７はｎ１Ｆ
ｌ電極を示す。この半導体レーザアレイは、ｎ型ＧａＡ
ｓブロック層５で挾まれた直下の活性層を発振領域とす
る。３つの発振領域８，９．ＩＱは分離溝１１で互いに
分離されており、独立に駆動することができる。各発振
領域は、ｎ型ＧａＡｓブロック層５の幅Ｗで限定されて
おり、発振領域８と９は光出力３０ｍ Ｗで使用し幅４
μｍである６発振領域１０は光出力３ｍＷで使用し、幅
６μｍである。(Example) Figure 1 shows J1 of an example of the semiconductor laser array of the present invention.
It is a sectional view showing M construction. In this figure, 1 is n-type Ga
As substrate, 2 is n-type AlGaAs cladding layer, 3 is Al
GaAs active layer, 4 is n-type AlGaAs cladding layer, 5
is an n-type GaAs block layer, 6 is a p-side electrode, and 7 is n1F.
1 electrode is shown. This semiconductor laser array is made of n-type GaA
The active layer directly under the s-block layers 5 is defined as an oscillation region. Three oscillation regions 8, 9. IQ are separated from each other by a separation groove 11 and can be driven independently. Each oscillation region is limited by the width W of the n-type GaAs block layer 5, and the oscillation regions 8 and 9 are used with an optical output of 30 mW and have a width of 4
The six oscillation regions 10 each having a width of 6 μm are used with an optical output of 3 mW.
第２図は本実施例の半導体レーザ構造の’Ｍ振波長の発
振領域幅Ｗ依存性を示す、実線は光出力３ｍＷ、破線は
光出力３０ｍ Ｗのときの依存性を示す。FIG. 2 shows the dependence of the 'M oscillation wavelength on the oscillation region width W of the semiconductor laser structure of this example. The solid line shows the dependence when the optical output is 3 mW, and the broken line shows the dependence when the optical output is 30 mW.
光出力の相違によって波長は２０〜３０人変化する。The wavelength varies by 20-30 degrees depending on the difference in light output.
発振領域８と９の使用時光出力３０ｍ Ｗでの波長は７
７４０人で、発振領域１０の使用時光出力３ｍＷでの波
長とほぼ一致する。これにより本発明の半導体レーザア
レイで動作時に均一な波長が得られることがわかる。When using oscillation areas 8 and 9, the optical output is 30 mW, and the wavelength is 7.
740 people, which almost matches the wavelength when the oscillation region 10 is used with an optical output of 3 mW. This shows that the semiconductor laser array of the present invention can provide a uniform wavelength during operation.
本実施例は、発振領域が３つの半導体レーザアレイ素子
について説明したが、同一基板上に作製した発振領域が
２つ以上の半導体レーザアレイ素子に同様に適用できる
。Although this embodiment has been described with respect to a semiconductor laser array element having three oscillation regions, it can be similarly applied to a semiconductor laser array element having two or more oscillation regions manufactured on the same substrate.
本発明は、Ａ Ｉ Ｇ ａ Ｉ ｎ ＰやＩ ｎＧａＡ
ｓ Ｐなどの他の半導体材料からなる半導体レーザ素子
に対しても適用でき、同様の効果を得ることができる
（発明の効果）
以上に説明したように、本発明によれば、動作状態で発
振波長の揃った、異なる出力の複数のビームを出射する
半導体レーザアレイが得られる。The present invention is directed to AIGaInP and InGaA.
It can also be applied to semiconductor laser elements made of other semiconductor materials such as sP, and similar effects can be obtained (effects of the invention). A semiconductor laser array that emits a plurality of beams with uniform wavelengths and different outputs can be obtained.
この半導体レーザアレイを光ディスク装置の光源に用い
れば、従来に比鮫してビームのトラック上への集光精度
が高まり、記録・再生の特性を向上することができる。If this semiconductor laser array is used as a light source for an optical disk device, the accuracy of focusing the beam onto the track will be improved compared to the conventional method, and recording/reproducing characteristics can be improved.
第１図は本発明の半導体レーザアレイの一実施例の構造
を示す断面図、第２図は発振波長の発振領域幅依存性を
光出力が３ｍＷと３０ｍ Ｗについて示す図、第３図は
従来の半導体レーザアレイの一実施例の構造を示す断面
図である。
１−−− ｎ型ＧａＡｓ基板、２−ｎ型Ａｌ。
Ｇａ＋、Ａｓクラッド層、３ ”・Ａ ｌ ｙ Ｇ ａ
＋ −ｒＡｓ活性層、４−Ｐ型Ａｌ５Ｇａ＋−５Ａｓ
クラッド層、５・・・ｎ型ＧａＡｓブロック層、６・・
・ρｌＦＩ電極、７・・・ｎ側電極、８．９．１０・・
・発振領域、１１・・・分離溝、１２・・・ｎ型Ａ Ｉ
ｓ Ｇ ａ ｔ−ａ Ａ ｓクラッド層、１３・−・
ｎ型Ａｌ５Ｇａ＋−ｔＡｓガイド層、１４・ｐ型ＧａＡ
ｓキャップ層、１５・・・絶縁膜。FIG. 1 is a cross-sectional view showing the structure of an embodiment of the semiconductor laser array of the present invention, FIG. 2 is a diagram showing the dependence of the oscillation wavelength on the oscillation region width for optical outputs of 3 mW and 30 mW, and FIG. 3 is a diagram of the conventional semiconductor laser array. 1 is a cross-sectional view showing the structure of an embodiment of a semiconductor laser array of FIG. 1---- n-type GaAs substrate, 2-n-type Al. Ga+, As cladding layer, 3”・A ly Ga
+ -rAs active layer, 4-P type Al5Ga+-5As
Cladding layer, 5... n-type GaAs block layer, 6...
・ρlFI electrode, 7...n side electrode, 8.9.10...
・Oscillation region, 11... Isolation groove, 12... n-type AI
s G a ta A s cladding layer, 13...
n-type Al5Ga+-tAs guide layer, 14/p-type GaA
s cap layer, 15...insulating film.
Claims (2)
、前記複数の発振領域には幅が狭いものと幅が広いもの
との少なくとも２つがあることを特徴とする半導体レー
ザアレイ。(1) A semiconductor laser array comprising a plurality of oscillation regions that are driven independently of each other, the plurality of oscillation regions having at least two types, one having a narrow width and the other having a wide width.
を光源とし、複数の出力ビームを同一トラック上に並べ
て集光し、幅の狭い発振領域からの光出力で消去または
記録をし、幅の広い発振領域からの光出力で再生をする
ことを特徴とする光ディスク装置。(2) A semiconductor laser array according to claim 1 is used as a light source, a plurality of output beams are lined up and focused on the same track, and the optical output from a narrow oscillation region is used to erase or record. An optical disc device characterized in that reproduction is performed using optical output from a wide oscillation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63276504A JPH02122584A (en) | 1988-10-31 | 1988-10-31 | Semiconductor laser array and optical disk device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63276504A JPH02122584A (en) | 1988-10-31 | 1988-10-31 | Semiconductor laser array and optical disk device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02122584A true JPH02122584A (en) | 1990-05-10 |
Family
ID=17570384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63276504A Pending JPH02122584A (en) | 1988-10-31 | 1988-10-31 | Semiconductor laser array and optical disk device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02122584A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0634823A1 (en) * | 1993-07-12 | 1995-01-18 | Koninklijke Philips Electronics N.V. | Semiconductor laser array with reduced crosstalk and method of making the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107885A (en) * | 1983-11-16 | 1985-06-13 | Nec Corp | Semiconductor laser |
| JPS60107886A (en) * | 1983-11-16 | 1985-06-13 | Nec Corp | Semiconductor laser |
| JPS61184737A (en) * | 1985-02-13 | 1986-08-18 | Nec Corp | Multibeam optical pickup device |
| JPS61287289A (en) * | 1985-06-14 | 1986-12-17 | Sharp Corp | Semiconductor laser device for light memory |
-
1988
- 1988-10-31 JP JP63276504A patent/JPH02122584A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60107885A (en) * | 1983-11-16 | 1985-06-13 | Nec Corp | Semiconductor laser |
| JPS60107886A (en) * | 1983-11-16 | 1985-06-13 | Nec Corp | Semiconductor laser |
| JPS61184737A (en) * | 1985-02-13 | 1986-08-18 | Nec Corp | Multibeam optical pickup device |
| JPS61287289A (en) * | 1985-06-14 | 1986-12-17 | Sharp Corp | Semiconductor laser device for light memory |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0634823A1 (en) * | 1993-07-12 | 1995-01-18 | Koninklijke Philips Electronics N.V. | Semiconductor laser array with reduced crosstalk and method of making the same |
| BE1007282A3 (en) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | An opto-electronic semiconductor device with an array of semiconductor diode lasers and a method for the production thereof. |
| US5805630A (en) * | 1993-07-12 | 1998-09-08 | U.S. Philips Corporation | Optoelectronic semiconductor device with an array of semiconductor diode lasers and method of manufacturing such a device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6084848A (en) | Two-dimensional near field optical memory head | |
| US5734632A (en) | Optical head using evanescent light and optical data recording/reproducing apparatus and method of using the same | |
| US6185237B1 (en) | Semiconductor laser | |
| US6781944B1 (en) | Optical information processor with monolithically integrated light emitting device, light receiving devices and optics | |
| JPH04155988A (en) | Semiconductor laser | |
| JPH0551974B2 (en) | ||
| JPH02122584A (en) | Semiconductor laser array and optical disk device | |
| JPS61287289A (en) | Semiconductor laser device for light memory | |
| EP0860817B1 (en) | Multiple VSEL assembly for read/write and tracking applications in optical disks | |
| JP2663545B2 (en) | Optical card recording / reproducing device | |
| JPS61184735A (en) | Multibeam type optical pickup device | |
| JPH054288Y2 (en) | ||
| Ichimura et al. | Optical disk recording using a GaN blue laser diode | |
| US6107646A (en) | Variable light source and optical pickup apparatus for different-type optical disc using the same | |
| JPH07153111A (en) | Optical head | |
| JP2661098B2 (en) | Semiconductor laser and optical disk device | |
| JP3154726B2 (en) | Semiconductor laser and disk device | |
| JP3533273B2 (en) | Optical device | |
| JPS61222040A (en) | Optical pickup device | |
| JPS62275332A (en) | Optical head | |
| JPS61184737A (en) | Multibeam optical pickup device | |
| JPH11204876A (en) | Semiconductor light emitting device | |
| JP2957193B2 (en) | Optical disk drive | |
| JPS5945641A (en) | Plural-beam optical head | |
| JPH01293589A (en) | Integrated-type light-emitting element |