JPH0211327U - - Google Patents
Info
- Publication number
- JPH0211327U JPH0211327U JP8919988U JP8919988U JPH0211327U JP H0211327 U JPH0211327 U JP H0211327U JP 8919988 U JP8919988 U JP 8919988U JP 8919988 U JP8919988 U JP 8919988U JP H0211327 U JPH0211327 U JP H0211327U
- Authority
- JP
- Japan
- Prior art keywords
- showing
- large number
- view
- vertical
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
第１図ａ〜ｃはそれぞれ本考案装置の第１実施
例の構成を示す要部の一部を破断して示した斜視
図、その一部の高周波電源接続状態を示す斜視図
及び全体の高周波電源接続状態を示す説明図、第
２図ａ〜ｃはそれぞれ本考案装置の第２実施例の
構成を示す要部の斜視図、全体の横断平面図及び
全体の高周波電源接続状態を示す説明図、第３図
は本考案装置の第３実施例の構成を示す横断面図
、第４図ａ〜ｃは従来装置の各種例の構成を示す
説明図である。
１……縦形（石英）ボート、２……ウエーハ、
３……プラズマ発生用電極、４……反応室、５…
…高周波電源、６……絶縁物。
Figures 1a to 1c are a partially cutaway perspective view showing the configuration of the first embodiment of the device of the present invention, a perspective view showing a part of the main part connected to the high frequency power supply, and a perspective view showing the overall high frequency power supply. An explanatory diagram showing the power supply connection state, and FIGS. 2 a to 2 c are a perspective view of the main part showing the configuration of the second embodiment of the device of the present invention, an overall cross-sectional plan view, and an explanatory diagram showing the entire high-frequency power supply connection state. , FIG. 3 is a cross-sectional view showing the structure of a third embodiment of the device of the present invention, and FIGS. 4 a to 4 c are explanatory views showing the structure of various examples of the conventional device. 1... Vertical (quartz) boat, 2... Wafer,
3... Electrode for plasma generation, 4... Reaction chamber, 5...
...High frequency power supply, 6...Insulator.
Claims (1)
周囲に、多数のプラズマ発生用電極３を絶縁して
配置してなる縦形プラズマＣＶＤ装置。 This is a vertical plasma CVD apparatus in which a large number of plasma generation electrodes 3 are insulated and arranged around a vertical boat 1 holding a large number of wafers 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8919988U JPH0211327U (en) | 1988-07-04 | 1988-07-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8919988U JPH0211327U (en) | 1988-07-04 | 1988-07-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0211327U true JPH0211327U (en) | 1990-01-24 |
Family
ID=31313752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8919988U Pending JPH0211327U (en) | 1988-07-04 | 1988-07-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0211327U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009536267A (en) * | 2006-05-05 | 2009-10-08 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for photoexcitation of chemicals for atomic layer deposition of dielectric films |
-
1988
- 1988-07-04 JP JP8919988U patent/JPH0211327U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009536267A (en) * | 2006-05-05 | 2009-10-08 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for photoexcitation of chemicals for atomic layer deposition of dielectric films |