JPH0235438U - - Google Patents
Info
- Publication number
- JPH0235438U JPH0235438U JP11397488U JP11397488U JPH0235438U JP H0235438 U JPH0235438 U JP H0235438U JP 11397488 U JP11397488 U JP 11397488U JP 11397488 U JP11397488 U JP 11397488U JP H0235438 U JPH0235438 U JP H0235438U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- processed
- electric field
- electrostatic adsorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案電極の一実施例を適用した半導
体製造装置の要部の縦断面図、第２図は本考案電
極の各部寸法を表記した説明図、第３図ａ〜ｃは
それぞれ本考案における静電吸着用電極及び電界
均一用電極の各例と寸法を示す説明図、第４図は
従来の静電吸着形高周波印加電極を使用した半導
体製造装置の要部の縦断面図、第５図は従来にお
ける静電吸着用電極を埋め込んだ板状絶縁物の例
と寸法を示す説明図である。
１……真空容器、２……静電吸着用電極、２ａ
……電界均一用電極、３ａ……凸形絶縁物、４…
…被処理基板、５ａ……（石英）構造物、６……
熱媒体、８……リード線、９……高周波供給源、
１０……直流電源、１４……表面。
Fig. 1 is a vertical cross-sectional view of the main parts of a semiconductor manufacturing device to which an embodiment of the electrode of the invention is applied, Fig. 2 is an explanatory diagram showing the dimensions of each part of the electrode of the invention, and Figs. An explanatory diagram showing each example and dimensions of the electrostatic adsorption electrode and the electric field uniformity electrode in the invention, Fig. 4 is a longitudinal cross-sectional view of the main part of a semiconductor manufacturing equipment using a conventional electrostatic adsorption type high frequency application electrode, and Fig. FIG. 5 is an explanatory diagram showing an example and dimensions of a plate-shaped insulator in which a conventional electrostatic chuck electrode is embedded. 1... Vacuum container, 2... Electrostatic adsorption electrode, 2a
...Electrode for electric field uniformity, 3a...Convex insulator, 4...
...Substrate to be processed, 5a... (quartz) structure, 6...
Heat medium, 8...Lead wire, 9...High frequency supply source,
10...DC power supply, 14...Surface.
Claims (1)
物３ａを配置し、この凸形絶縁物３ａの表面１４
から多くとも１mm以内に、被処理基板４を静電吸
着する当該処理基板４より小さな静電吸着用電極
２を埋設し、かつ当該凸形絶縁物３ａ内のこの静
電吸着用電極２の位置より下方位置には被処理基
板４の周辺部の電界を均一にする当該被処理基板
４より大きな電界均一用電極２ａを埋設せしめ、
凸形絶縁物３ａの裏面に冷却または加熱される熱
媒体６を接触し、上記静電吸着用電極２及び電界
均一用電極２ａに接続され高周波及び静電圧が印
加されるリード線８を真空容器１外に引出すと共
に、上記被処理基板４の周囲部下面に入り込む構
造物５ａを配設せしめてなる静電吸着形高周波印
加電極。 A convex insulator 3a having a convex surface shape is arranged in the vacuum container 1, and the surface 14 of the convex insulator 3a is
An electrostatic adsorption electrode 2 that electrostatically adsorbs the substrate 4 to be processed and is smaller than the processing substrate 4 is buried within 1 mm at most from An electric field uniformity electrode 2a, which is larger than the substrate 4 to be processed, is buried in a lower position to make the electric field uniform around the periphery of the substrate 4 to be processed,
A heating medium 6 to be cooled or heated is brought into contact with the back surface of the convex insulator 3a, and a lead wire 8 connected to the electrostatic adsorption electrode 2 and the electric field uniformity electrode 2a to which high frequency and electrostatic voltage are applied is placed in a vacuum container. 1. An electrostatic adsorption type high-frequency application electrode is provided with a structure 5a that is drawn out from the substrate 1 and inserted into the lower surface of the periphery of the substrate 4 to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11397488U JPH0235438U (en) | 1988-08-29 | 1988-08-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11397488U JPH0235438U (en) | 1988-08-29 | 1988-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0235438U true JPH0235438U (en) | 1990-03-07 |
Family
ID=31354299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11397488U Pending JPH0235438U (en) | 1988-08-29 | 1988-08-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0235438U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001516967A (en) * | 1997-09-16 | 2001-10-02 | アプライド マテリアルズ インコーポレイテッド | Plasma chamber support with electrically coupled collar |
| JP2001345372A (en) * | 2000-05-31 | 2001-12-14 | Kyocera Corp | Wafer supporting member and method of manufacturing the same |
| WO2007132757A1 (en) * | 2006-05-15 | 2007-11-22 | Ulvac, Inc. | Cleaning method and vacuum processing apparatus |
| JP2008171888A (en) * | 2007-01-09 | 2008-07-24 | Ulvac Japan Ltd | Plasma cvd apparatus and thin-film formation method |
| JP2011138907A (en) * | 2009-12-28 | 2011-07-14 | Tokyo Electron Ltd | Plasma processing apparatus |
| US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
| US9088085B2 (en) | 2012-09-21 | 2015-07-21 | Novellus Systems, Inc. | High temperature electrode connections |
-
1988
- 1988-08-29 JP JP11397488U patent/JPH0235438U/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001516967A (en) * | 1997-09-16 | 2001-10-02 | アプライド マテリアルズ インコーポレイテッド | Plasma chamber support with electrically coupled collar |
| JP2001345372A (en) * | 2000-05-31 | 2001-12-14 | Kyocera Corp | Wafer supporting member and method of manufacturing the same |
| JP4502462B2 (en) * | 2000-05-31 | 2010-07-14 | 京セラ株式会社 | Wafer support member and manufacturing method thereof |
| WO2007132757A1 (en) * | 2006-05-15 | 2007-11-22 | Ulvac, Inc. | Cleaning method and vacuum processing apparatus |
| JP5335421B2 (en) * | 2006-05-15 | 2013-11-06 | 株式会社アルバック | Vacuum processing equipment |
| JP2008171888A (en) * | 2007-01-09 | 2008-07-24 | Ulvac Japan Ltd | Plasma cvd apparatus and thin-film formation method |
| US8962101B2 (en) | 2007-08-31 | 2015-02-24 | Novellus Systems, Inc. | Methods and apparatus for plasma-based deposition |
| JP2011138907A (en) * | 2009-12-28 | 2011-07-14 | Tokyo Electron Ltd | Plasma processing apparatus |
| US9245776B2 (en) | 2009-12-28 | 2016-01-26 | Tokyo Electron Limited | Plasma processing apparatus |
| US9088085B2 (en) | 2012-09-21 | 2015-07-21 | Novellus Systems, Inc. | High temperature electrode connections |
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