JPH02111898A - Producing device for semiconductor element - Google Patents
Producing device for semiconductor elementInfo
- Publication number
- JPH02111898A JPH02111898A JP26544988A JP26544988A JPH02111898A JP H02111898 A JPH02111898 A JP H02111898A JP 26544988 A JP26544988 A JP 26544988A JP 26544988 A JP26544988 A JP 26544988A JP H02111898 A JPH02111898 A JP H02111898A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- solder
- acid
- plating
- organic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000007747 plating Methods 0.000 claims abstract description 36
- 229910000679 solder Inorganic materials 0.000 claims abstract description 36
- 150000007524 organic acids Chemical class 0.000 claims abstract description 15
- 239000002210 silicon-based material Substances 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 abstract description 10
- 238000009713 electroplating Methods 0.000 abstract description 9
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 3
- 235000014676 Phragmites communis Nutrition 0.000 abstract 4
- 239000007788 liquid Substances 0.000 abstract 3
- 150000001455 metallic ions Chemical class 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、はんだめっき等の外装処理を行う半導体素
子の製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus that performs exterior processing such as solder plating.
第２図は、従来のはんだめっき等の外装処理を行う半導
体素子の製造装置を示す概略図である。FIG. 2 is a schematic diagram showing a conventional semiconductor device manufacturing apparatus that performs exterior processing such as solder plating.
図において、（１）はシリコーン系材料を有する半導体
素子で、例えば、シリコーン系材料からなる光入力又は
光出力用のガラス窓（２）を有するガラス窓付バックー
ジ、或は、図示しない開口部を持つ中空パッケージで、
開口部を通じて半導体素子が外気に触れないようにシリ
コーン系材料を主材とする保護膜で覆われシールされて
いる樹脂シール型中空プラスチックパッケージである。In the figure, (1) is a semiconductor element made of a silicone-based material, for example, a backge with a glass window (2) made of a silicone-based material for optical input or output, or an opening (not shown). In a hollow package with
It is a resin-sealed hollow plastic package that is covered and sealed with a protective film mainly made of silicone material to prevent semiconductor elements from being exposed to the outside air through the opening.
（３）は上記半導体素子（１）の外部リードで、はんだ
めっき等の外装処理がおこなわれる部分である。（４）
ははんだデイツプ装置、（９はこのはんだデイツプ装置
（４）の中に溝たされ２３０℃〜２６０℃の温度に保た
れている溶融はんだ、（６）はこの溶融はんだ（５１の
中に浮遊するような状態ではんだデイツプ装置（４）に
支持され底部にはんだの流入しうる穴（６Ａ）を有する
はんだ浴槽、（７）は穴（６Ａ）の下方に設けられ、穴
（６Ａ）を通じてはんだをはんだ浴槽（６）に送り込む
はんだ送り込み機構である。このはんだ送り込み機構に
よって送り込まれたはんだは、上記はんだ浴槽（６）の
上端から溢れ出してはんだデイツプ装置（４）に落下し
、強制的に循環させられることになるため、はんだ浴槽
（６）のはんだの表面が常に清浄な状態に保持されてい
るものである。このように構成された従来の製造装置で
外装処理を行う場合には、先ず、半導体素子（１）の外
部リード（３）を別に用意した樹脂系フラックス（図示
せず）に浸漬して外部リード（３）の表面に存在する酸
化膜等を除去する０次に、上記はんだ浴槽（６）の溶融
はんだ（５１に半導体素子（１）の外部リード（３）を
、はんだめっきするべき所定位置まで浸漬する。この場
合、半導体素子の外部リード以外の部分がはんだ浴槽に
浸漬されるとシリコーン系材料に悪影響があるため、は
んだ浴槽上で半導体装置の位置を制御し、外部リード（
３）の所定部分のみを約３〜５秒浸漬し、外装処理を行
うものである。(3) is an external lead of the semiconductor element (1), which is a part where exterior processing such as solder plating is performed. (4)
Solder dip device (9 is molten solder that is grooved in this solder dip device (4) and maintained at a temperature of 230°C to 260°C, (6) is floating in this molten solder (51) In this state, a solder bath (7) is supported by the solder dip device (4) and has a hole (6A) at the bottom through which solder can flow. This is a solder feeding mechanism that feeds the solder into the solder bath (6).The solder fed by this solder feeding mechanism overflows from the upper end of the solder bath (6), falls into the solder dip device (4), and is forced into circulation. Therefore, the surface of the solder in the solder bath (6) is always maintained in a clean state.When performing exterior processing using conventional manufacturing equipment configured in this way, first , the external leads (3) of the semiconductor element (1) are immersed in separately prepared resin flux (not shown) to remove the oxide film etc. present on the surface of the external leads (3). Next, the above solder is removed. The external leads (3) of the semiconductor element (1) are immersed in the molten solder (51) of the bath (6) up to the predetermined position to be solder plated.In this case, the parts of the semiconductor element other than the external leads are immersed in the solder bath. Since this has a negative effect on silicone-based materials, the position of the semiconductor device on the solder bath must be controlled and the external leads (
3) Only the predetermined portions are immersed for about 3 to 5 seconds to perform exterior treatment.
従来の半導体素子の製造装置では、以上述べたように外
装処理が行われているので、外部リード（３）の表面の
酸化膜等を除去するために樹脂系フラックスに浸漬する
必要がある他、はんだめっきに際しては外部リード（３
）の部分のみをはんだ浴槽（６）の溶融はんだ（５１に
浸漬するために半導体素子の位置を制御する必要がある
など生産性の悪い処理、取り扱いを要するという問題点
があった。In conventional semiconductor device manufacturing equipment, the exterior treatment is performed as described above, so in addition to immersing the external lead (3) in a resin flux to remove the oxide film etc. on the surface of the external lead (3), When solder plating, use external leads (3
) There was a problem in that it required processing and handling with poor productivity, such as the need to control the position of the semiconductor element in order to immerse only the portion of the semiconductor element in the molten solder (51) of the solder bath (6).
このような問題点を解決するためには、第３図に概略図
を示すような′ｒＬ解めっき装置（８）を採用すること
が考えられる。即ち、電解めっき装置（８）に無機酸系
であるぶつ酸系めつき液（９）（通常、はうふつ酸系の
ものが使われている。）を満たし、このぶつ酸系めっき
？？Ｉ（９１中に電源装置（１１）の正極に接続された
陽極（１０１と負極に接続された半導体素子（１）の外
部リード（３）とを浸漬し直？Ｍ、電圧を印加してはん
だめっきの外装処理を行うものである。この方式の場合
、めっき液としてぶつ酸系のものが使用されるため、外
部リードの表面の酸化膜は、めっき液に浸漬するだけで
除去されることになるがシリコーン系材料部（２１は、
めっき液によって浸食されるため、外部リード以外の部
分がめつき液に浸漬されないように、半導体素子の位置
制御が必要であるという問題が残る。従って、更にこの
問題を解決するために、第４図の概略図に示すようにふ
っ素糸ゴムチューブ（１２）で、半導体素子（１）のシ
リコーン系材料部（２）を覆って、めっき液に浸漬すれ
ば、ぶつ酸系めつき液（９）に侵食されないようにする
ことは出来るが、覆うために手間がかかるという問題点
があり、生産性の良い電解めっきができなかった。In order to solve these problems, it is conceivable to employ a 'rL solution plating apparatus (8) as schematically shown in FIG. 3. That is, the electrolytic plating device (8) is filled with an inorganic acid-based butic acid-based plating solution (9) (usually a sulfuric acid-based plating solution is used), and this plating solution is formed by filling the electrolytic plating device (8) with an inorganic acid-based plating solution (9) (usually a sulfuric acid-based plating solution). ? Re-immerse the anode (101) connected to the positive electrode of the power supply device (11) and the external lead (3) of the semiconductor element (1) connected to the negative electrode in I (91), apply voltage and solder. This method performs exterior plating treatment.In this method, an acid-based plating solution is used, so the oxide film on the surface of the external lead can be removed simply by immersing it in the plating solution. Naruga silicone material department (21 is
Since the semiconductor element is eroded by the plating solution, there remains the problem that the position of the semiconductor element must be controlled so that parts other than the external leads are not immersed in the plating solution. Therefore, in order to further solve this problem, the silicone material part (2) of the semiconductor element (1) is covered with a fluorine thread rubber tube (12) as shown in the schematic diagram of FIG. Although immersion can prevent corrosion by the acid-based plating solution (9), there is a problem in that it takes time and effort to cover, making it impossible to perform electrolytic plating with good productivity.
この発明は、上記のような問題点を解決するためになさ
れたもので外部リードの酸化膜除去が容易で、かつ、め
っき槽上での半導体素子の位置制御が不要となる生産性
の良い製造装置を提供しようとするものである。This invention was made in order to solve the above-mentioned problems, and it is easy to remove the oxide film of the external leads, and it is not necessary to control the position of the semiconductor element on the plating bath, resulting in high productivity manufacturing. The aim is to provide equipment.
この発明に係る半導体素子の製造装置は、電解めっき液
として、シリコーン系材料を侵食しない有機酸系の処理
液を用いるようにしたものである。The semiconductor device manufacturing apparatus according to the present invention uses an organic acid-based processing solution that does not corrode silicone-based materials as an electrolytic plating solution.
この発明によれば電解めっき液としてシリコーン系材料
を侵食しない有機酸系の処理液を用いるため、半導体素
子全体をめっき液中に浸漬することが可能となり、めっ
き槽上での半導体素子の位置制御が不要となる他、外部
リードの酸化膜は、めっき液に浸漬することにより酸に
よって除去されろため、生産性のよい電解めっきが可能
となる。According to this invention, since an organic acid-based processing solution that does not corrode silicone-based materials is used as the electrolytic plating solution, it is possible to immerse the entire semiconductor device in the plating solution, and to control the position of the semiconductor device on the plating bath. In addition, the oxide film on the external lead can be removed by acid by immersing it in a plating solution, making it possible to perform electrolytic plating with high productivity.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は、実施例の構成を示す概略図であり、めっき液
として有機酸、例えば、アルカン酸を主成分とした金属
イオンを含有する有機酸系めっき液（１３）を使用した
点に特徴がある。その他の構成は従来の製造装置と同様
であるため説明を省略する。有機酸系めっき液（１３）
は、半導体素子＋１１のシリコーン系材料（２）を侵食
しないため、めっき処理に際しては、第１図に示すよう
に、半導１本素子（１）全体をめっき液（１３）中に浸
漬する。この結果、外部リード（３）の酸１ヒ膜が除去
されるとともにめっき液中の金属イオンが外部リード（
３）に析出して、外装処理が行われる。FIG. 1 is a schematic diagram showing the configuration of the example, which is characterized in that an organic acid, for example, an organic acid-based plating solution (13) containing metal ions mainly composed of alkanoic acid was used as the plating solution. There is. The rest of the configuration is the same as that of the conventional manufacturing apparatus, so a description thereof will be omitted. Organic acid plating solution (13)
does not corrode the silicone material (2) of the semiconductor element +11, so during the plating process, the entire single semiconductor element (1) is immersed in the plating solution (13) as shown in FIG. As a result, the acid 1 arsenal film on the external lead (3) is removed and the metal ions in the plating solution are removed from the external lead (3).
3) is deposited and exterior treatment is performed.
なお、上記実施例では、電解めっき液に有機酸としてア
ルカン酸を用いたが、その他の有機酸、例えばアルカノ
ールスルフォン酸、プロパノールスルフォン酸、或はメ
タスルフォン酸などを用いても同様の効果が得られる。In the above example, alkanoic acid was used as the organic acid in the electrolytic plating solution, but the same effect can be obtained by using other organic acids such as alkanol sulfonic acid, propanol sulfonic acid, or metasulfonic acid. It will be done.
以上のように、この発明によれば、有機酸系の処理液を
使用して半導体素子の外部リード等にはんだめっき等を
施すようにしたので、外部リードの酸化膜除去に特殊な
処理を行う必要がない他、シリコーン系材料部が処理液
に侵食されることがなく、従って、めっき槽上で半導体
素子の位置制御を行う必要がないため、生産性の良い製
造装置が得られる効果がある。As described above, according to the present invention, since the external leads of the semiconductor element are subjected to solder plating using an organic acid-based processing solution, a special process is performed to remove the oxide film from the external leads. Not only is this unnecessary, but the silicone material is not eroded by the processing solution, and therefore there is no need to control the position of the semiconductor elements on the plating bath, resulting in a highly productive manufacturing device. .
第１図はこの発明の一実施例を示す概略図、第２図は従
来の装置を示す概略図、第３図、第４図は従来の別の形
態の装置を示す概略図である。
図において、（１）は半導体素子、ｆ２］はシリコーン
系材料部、（３）は外部リード、（４）ははんだデイツ
プ装置、ｆ５１は溶融はんだ、（６）ははんだ浴槽、（
７）ははんだ送り込み機構、（８）は電解めっき装置、
（９）はふり酸系めっき液、（１３）は有機酸系めっき
液である。
なお、各図中同一符号は同−又は相当部分を示す。FIG. 1 is a schematic diagram showing an embodiment of the present invention, FIG. 2 is a schematic diagram showing a conventional device, and FIGS. 3 and 4 are schematic diagrams showing another form of conventional device. In the figure, (1) is the semiconductor element, f2] is the silicone material part, (3) is the external lead, (4) is the solder dip device, f51 is the molten solder, (6) is the solder bath, (
7) is a solder feeding mechanism, (8) is an electrolytic plating device,
(9) is a fluoric acid-based plating solution, and (13) is an organic acid-based plating solution. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
処理液中に設けられた電極を備え、この電極と、上記有
機酸系処理液に浸漬され、シリコーン系材料を有する半
導体素子との間に通電することにより、上記半導体素子
の外部リード等にはんだめっき等を施すようにしたこと
を特徴とする半導体素子の製造装置。A container containing an organic acid-based treatment solution, and an electrode provided in the organic acid-based treatment solution, the electrode and a semiconductor element having a silicone-based material immersed in the organic acid-based treatment solution. 1. An apparatus for manufacturing a semiconductor element, characterized in that solder plating or the like is applied to external leads, etc. of the semiconductor element by applying current between the two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26544988A JPH02111898A (en) | 1988-10-20 | 1988-10-20 | Producing device for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26544988A JPH02111898A (en) | 1988-10-20 | 1988-10-20 | Producing device for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02111898A true JPH02111898A (en) | 1990-04-24 |
Family
ID=17417313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26544988A Pending JPH02111898A (en) | 1988-10-20 | 1988-10-20 | Producing device for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02111898A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04162759A (en) * | 1990-10-26 | 1992-06-08 | Yamaha Corp | Solder plating device for lead wire |
| JPH04181760A (en) * | 1990-11-16 | 1992-06-29 | Yamaha Corp | Solder plating apparatus of lead |
| JPH0476051U (en) * | 1990-11-16 | 1992-07-02 | ||
| JPH0476052U (en) * | 1990-11-15 | 1992-07-02 |
-
1988
- 1988-10-20 JP JP26544988A patent/JPH02111898A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04162759A (en) * | 1990-10-26 | 1992-06-08 | Yamaha Corp | Solder plating device for lead wire |
| JPH0476052U (en) * | 1990-11-15 | 1992-07-02 | ||
| JPH04181760A (en) * | 1990-11-16 | 1992-06-29 | Yamaha Corp | Solder plating apparatus of lead |
| JPH0476051U (en) * | 1990-11-16 | 1992-07-02 |
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