JPH02108210A - Manufacture of thin film magnetic head - Google Patents

Abstract

PURPOSE:To simplify a manufacturing process by laminating uniformly a magnetic film onto the whole surface, removing a resist, and removing except the part formed directly only on the lower part magnetic block in an indulating layer, after the conductive layer is partially removed by chemical etching. CONSTITUTION:A conductive film 15 such as Cu is formed on a lower part magnetic block 10 by a sputter, etc., and a photo resist 16 is applied and adhered on the film 15. Next, the mask of the shape of a coil layer 12 is covered on the regist 16, and irradiated with a ultra-violet ray and a part of the resist 16 is washed out with a developing wave. Next, the part of the conducting film 15 to expose the surface is removed with chemical etching. Next, an insulating film 17 of SiO2 and Al2O3 is formed with a sputter with the same film thickness as the film thickness of the coil layer 12 on the block 10 and the regist 16. Next, the block 10 is put into the developing solution oscillated with an ultrasonic wave, the resist 16 is melted, the insulating film 17 on the resist 16 is also removed together and next, the epoxi resin is bonded onto the coil layer 12, and an insulating layer 11 and thereafter, cut.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is used in a magnetic recording/reproducing device that writes data to a magnetic recording medium and reads data from a magnetic recording medium. The present invention relates to a method of manufacturing a thin film magnetic head having a structure sandwiched between blocks.

2. Description of the Related Art In recent years, a multi-track thin film magnetic head for magnetic tape devices has been developed in which a thin film coil is formed on a magnetic substrate, and another ferrite substrate is placed over the coil.

The configuration of the conventional thin film magnetic head configured as described above will be explained.

FIG. 8 is an exploded perspective view showing a conventional thin film magnetic head. In FIG.
Lower magnetic block formed of ferrite etc., 2
is an insulating layer formed of silicon dioxide, alumina, etc., and the insulating layer 2 has D!
1 part 2a is provided. 3 is a coil layer, and the coil layer 3 is formed in the recess 2a. The insulating layer 2 functions as a gap layer near the medium facing surface. Reference numeral 4 denotes an upper magnetic block that forms a magnetic circuit together with the lower magnetic block 1. The upper magnetic block 4 is bonded onto the insulating layer 2 and the coil layer 3 using an epoxy resin 5 or the like.

A method of manufacturing this conventional thin film magnetic head will be described below with reference to FIGS. 9 to 17.

First, an insulating layer 2 is formed on a lower magnetic block 1 made of a non-conductive magnetic material. Insulating layer 2 is formed as follows. First, as shown in FIG. 9, an insulating film 6 is formed on the lower magnetic block 1 by sputtering or the like. At this time, the insulating film 6 is made of silicon dioxide, alumina, or the like. Next, a recess 2a having a sufficient width to accommodate the coil layer 3 and reaching the lower magnetic block 1 is formed in the insulating film 6. A method for forming the recess 2a will be described below. Insulating film 6
A photoresist 7 is applied thereon, and the photoresist 7 is dried and hardened. Then, a mask having a through hole having the same shape as the recess 2a is placed over the photoresist 7, and ultraviolet rays are irradiated from above the mask. Then, the portion of the photoresist 7 irradiated with ultraviolet rays is washed off with a developer that dissolves it.

This state is shown in FIG. Next, the recessed portion 2a of the insulating film 6 is formed using an ion etching device. An ion etching device is a device that performs physical etching by accelerating Ar particles in a plasma state using an electric field, colliding the Ar particles with a target, and using the kinetic energy of the Ar particles to knock out the particles that make up the target. It is.

The lower magnetic block 1 is placed in an ion etching apparatus through a target so that the Ar particles hit the photoresist 7 and the exposed portion of the insulating film 6 after the photoresist 7 has been removed, and etching is performed. At this time, the portion of the insulating film 6 where the photoresist 7 is removed and exposed 311 is etched, but the portion where the photoresist 7 remains is not etched. Then, the exposed portion of the insulating film 6 where the photoresist 7 has been removed is etched until it reaches the lower magnetic block 1. This state is shown in FIG. After this, the remaining photoresist 7 is irradiated with ultraviolet rays, and the remaining photoresist 7 is washed away with a developer. This state is shown in FIG.

The reason why such an ion etching device is used for etching the insulating film 6 is that the insulating film 6 is generally made of a chemically stable material, and it is difficult to perform chemical etching (
This is for a good reason. In this way, the recess 2a is formed and the insulating layer 2 is formed. Next, a coil layer 3 is formed. Coil layer 3 is formed as follows. First, as shown in FIG. 13, on the insulating layer 2 and the exposed lower magnetic block 1, a conductive film 8 made of Cu, A1, etc. is formed by sputtering or the like to have the same thickness as the insulating layer 2 (the thickness of leprosy). Then, a photoresist 9 is applied on the conductive film 8, and the photoresist 9 is dried and hardened.Next, a mask having the same shape as the coil layer 3 is formed in the recess 2a. The photoresist 9 is positioned so that the photoresist 9 is exposed, and ultraviolet rays are irradiated from above, and the portions of the photoresist 9 that have been exposed to the ultraviolet rays are washed off with a developer.This state is shown in FIG. After that, the exposed portion of the conductive film 8 is removed by chemical etching.This state is shown in FIG. 15.Then, as shown in FIG. The coil layer 3 is thus formed.Finally, the upper magnetic block 4 is bonded onto the coil layer 3 and the insulating layer 2 with an epoxy resin 5.This state is shown in FIG.

Problems to be Solved by the Invention However, in the conventional structure described above, when forming the predetermined recess 2a in the insulating layer 2, which is generally made of chemically stable silicon dioxide, alumina, etc., it cannot be formed by ordinary chemical etching. , it was necessary to perform physical etching such as ion etching in which particles collide with each other. This required a lot of man-hours and resulted in poor productivity.

The present invention solves the above-mentioned conventional problems, and provides a method for manufacturing a thin-film magnetic head that does not require physical etching of an insulating layer using an ion etching device or the like to form recesses, and improves mass productivity. It is aimed at something.

Means for Solving the Problem To achieve this objective, a conductive film is laminated on the lower magnetic block, a resist layer having the same shape as the coil layer to be formed on the conductive film is formed, and the conductive layer After partially removing the insulating layer by chemical etching, a magnetic film is uniformly laminated over the entire surface, and the resist layer is removed, thereby removing the part of the insulating layer other than the part directly formed only on the lower magnetic block. It has this structure.

Function: With this configuration, the coil layer and insulating layer of the thin film magnetic head can be manufactured only by chemical etching.

Embodiment FIG. 1 is an exploded perspective view showing a thin film magnetic head manufactured by a thin film magnetic head manufacturing method according to an embodiment of the present invention. In FIG. 1, numeral 10 is a lower magnetic block made of Ni-Zn ferrite, etc., which serves as a substrate during manufacturing of the thin-film magnetic head and forms part of the magnetic circuit, and 11 is a lower magnetic block made of silicon dioxide, alumina, etc. 12 is a coil layer, 13 is an upper magnetic block that forms a magnetic circuit together with the lower magnetic block 10, and the upper magnetic block 13 is made of epoxy resin. 14 or the like on the insulating layer 11 and the coil layer 12.

The second method for manufacturing the thin film magnetic head configured as described above is described below.
This will be explained using FIGS. 7 to 7. First, the coil layer 12 is formed on the lower magnetic block 10. The coil layer 12 is formed as follows.

First, as shown in FIG. 2, a conductive film 15 made of Cu, AI, etc. is formed by sputtering or the like. And conductive film 1
7 photoresist 16 is applied on top of 5, and the photoresist 16 is dried and hardened.

Next, a mask having the same shape as the coil layer 12 is placed over the photoresist 16, and ultraviolet rays are irradiated from above.The portion of the photoresist 16 that is exposed to the ultraviolet rays dissolves in the developer, so that portion is treated with the developer. Wash it off. This state is the third
As shown in the figure. Next, as shown in FIG. 4, the exposed portion of the conductive film 15 is removed by chemical etching.

In this state, the photoresist 16 is placed on the coil layer 12. Next, as shown in Fig. 5, the lower magnetic block 1 is
0 and the photoresist 16, an insulating film 17 is formed by sputtering or the like to have a thickness similar to that of the coil layer 12. At this time, the insulating film 17 is made of silicon dioxide, alumina, or the like. After forming the insulating film 17, the lower magnetic block 10 is placed in a developer vibrated by ultrasonic waves to dissolve the photoresist 16.

Then, the insulating film 17 formed on the photoresist 16
will also be removed. The reason why vibration is applied to the developer at this time is as follows.

When the insulating film 17 is formed, an extremely thin insulating film is also formed on the side surface of the photoresist 16, and the photoresist 16
This is to encourage the developer to penetrate into the photoresist 16 by applying vibration to the developer. By removing the photoresist 16, the coil layer 12 and the insulating layer 11 are formed.This state is shown in FIG. 6.Finally, as shown in FIG. It is adhered onto the insulating layer 11, the medium facing surface is polished, and each thin film magnetic head is cut and separated.

As described above, according to this embodiment, the conductive film 15 is formed on the lower magnetic block 10, the photoresist 16 having the same shape as the coil layer 12 is formed thereon, and the excess conductive film 15 is formed on the conductive film 15.
After removing the insulating film 17, the insulating film 17 is laminated thereon, and then the photoresist 16 is removed, so that it is no longer necessary to perform physical etching such as ion etching to finish the insulating film into a predetermined shape as in the conventional method. Since there is no such thing, the manufacturing process is greatly simplified and mass productivity is improved.

Effects of the Invention In the present invention, a conductive film is laminated on a lower magnetic block, a resist layer having the same shape as the coil layer to be formed is formed on the conductive film, and the conductive layer is partially etched by chemical etching. After the removal, a magnetic film is uniformly layered over the entire surface, and the resist layer is removed. By removing the portion of the insulating layer other than the portion directly formed on the lower magnetic block, it is possible to perform etching using only chemical etching. Since the coil layer and insulating layer of the thin film magnetic head can be manufactured, the manufacturing process is simplified and mass productivity is improved.

[Brief explanation of the drawing]

FIG. 1 is an exploded perspective view showing a thin film magnetic head manufactured by a method for manufacturing a thin film magnetic head according to an embodiment of the present invention;
2 to 7 are cross-sectional views showing a method of manufacturing a thin film magnetic head according to an embodiment of the present invention, FIG. 8 is an exploded perspective view showing a conventional thin film magnetic head, and FIGS. 9 to 17 are conventional FIG. 2 is a cross-sectional view showing a method of manufacturing a thin film magnetic heladium. O...Lower magnetic block...Insulating layer 2...Coil layer 3...Upper magnetic block 4...Epoxy resin 5... ... Conductive film 6 ... Photoresist 7 ... Insulating film

Claims (1)

[Claims] A method for manufacturing a thin film magnetic head, comprising forming a coil layer and an insulating layer on a lower magnetic block made of a non-conductive magnetic material, and bonding an upper magnetic block on the coil layer and the insulating layer, the method comprising: A first step of laminating a conductive film on a magnetic block, forming a resist layer having the same shape as a coil layer to be formed on the conductive film, and partially removing the conductive layer by chemical etching. , a second step of uniformly laminating an insulating film on the surface on which the conductive layer was formed in the first step, and removing the resist layer to form a layer on the lower magnetic block within the insulating film. a third step of removing portions other than those directly formed; and a fourth step of bonding an upper magnetic block constituting a magnetic circuit together with the lower magnetic block on the coil layer and the insulating layer. A method of manufacturing a thin-film magnetic head characterized by: