JPH02102654U - - Google Patents
Info
- Publication number
- JPH02102654U JPH02102654U JP1204289U JP1204289U JPH02102654U JP H02102654 U JPH02102654 U JP H02102654U JP 1204289 U JP1204289 U JP 1204289U JP 1204289 U JP1204289 U JP 1204289U JP H02102654 U JPH02102654 U JP H02102654U
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- ion
- bias ring
- neutralizing
- introducing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 230000003472 neutralizing effect Effects 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
Description
第１図は本考案の一実施例の構成図、第２図は
従来例の構成図である。
１……不純物イオン発生源、２……質量分析部
、３……電子発生箱、３Ａ……電子発生源、４…
…電荷を持つたビームの軌跡、５……バイアスリ
ング、６……注入デイスク、７……ウエーハ、１
０……電子、１１……静電板、１２……不純物イ
オンビーム、３……バイアスリング、１４……タ
ーゲツト板。
FIG. 1 is a block diagram of an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional example. 1... Impurity ion generation source, 2... Mass spectrometry section, 3... Electron generation box, 3A... Electron generation source, 4...
... Trajectory of charged beam, 5... Bias ring, 6... Injection disk, 7... Wafer, 1
0...electron, 11...electrostatic plate, 12...impurity ion beam, 3...bias ring, 14...target plate.
Claims (1)
発生したイオンビームを分離する質量分析部と、
前記質量分析部より分離されたイオンビームを導
入し中和するための電子発生箱と、中和されたイ
オンビームを通すバイアスリングと、前記電子発
生箱とバイアスリング間に設けられ中和されてな
いイオンビームをバイアスリングに導入する静電
板と、前記バイアスリングを通過したイオンビー
ムを照射するための半導体基板を保持する注入デ
イスクとを含むことを特徴とするイオン注入装置
。 an impurity ion generation source and a mass spectrometer that separates an ion beam generated from the ion generation source;
An electron generation box for introducing and neutralizing the ion beam separated from the mass spectrometer, a bias ring for passing the neutralized ion beam, and an electron generation box for neutralizing the ion beam provided between the electron generation box and the bias ring. An ion implantation apparatus comprising: an electrostatic plate for introducing an ion beam into a bias ring; and an implantation disk holding a semiconductor substrate for irradiation with the ion beam that has passed through the bias ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204289U JPH02102654U (en) | 1989-02-02 | 1989-02-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204289U JPH02102654U (en) | 1989-02-02 | 1989-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02102654U true JPH02102654U (en) | 1990-08-15 |
Family
ID=31221130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1204289U Pending JPH02102654U (en) | 1989-02-02 | 1989-02-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02102654U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59196600A (en) * | 1983-04-21 | 1984-11-07 | 工業技術院長 | Neutral particle implanting method and its device |
-
1989
- 1989-02-02 JP JP1204289U patent/JPH02102654U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59196600A (en) * | 1983-04-21 | 1984-11-07 | 工業技術院長 | Neutral particle implanting method and its device |
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