JPH02101462A - Pattern forming material - Google Patents
Pattern forming materialInfo
- Publication number
- JPH02101462A JPH02101462A JP63255112A JP25511288A JPH02101462A JP H02101462 A JPH02101462 A JP H02101462A JP 63255112 A JP63255112 A JP 63255112A JP 25511288 A JP25511288 A JP 25511288A JP H02101462 A JPH02101462 A JP H02101462A
- Authority
- JP
- Japan
- Prior art keywords
- forming material
- pattern forming
- resin
- pattern
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 230000002378 acidificating effect Effects 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 238000002834 transmittance Methods 0.000 abstract description 11
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 abstract description 3
- 238000002835 absorbance Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000010183 spectrum analysis Methods 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体素子等を製造する時に用いられるパター
ン形成材料に係り、露光エネルギー源として例えば２４
Ｂ−４ｎｍのＫｒＦエキシマレーザ光又は遠紫外光等を
用いてポジ型のパターンを形成する際のパターン形成材
料に係る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pattern forming material used in manufacturing semiconductor devices, etc.
The present invention relates to a pattern forming material for forming a positive pattern using B-4 nm KrF excimer laser light, far ultraviolet light, or the like.
従来の技術
近年、半導体デバイスの高密度集積化にともない、微細
加工、中でもフォトリングラフィに用いる露光装置の使
用波長は益々短波長化し、今ではＫｒＦエキシマレーザ
光（２４８，４ｎｍ ）が検討されるまでになってきて
いる。しかしながら、この波長に適したレジストは未だ
適当なものはなかった。Background of the Invention In recent years, as semiconductor devices have become more densely integrated, the wavelengths used by exposure equipment used for microfabrication, particularly photolithography, have become increasingly shorter, and KrF excimer laser light (248.4 nm) is now being considered. It's getting to that point. However, there has not yet been a suitable resist for this wavelength.
例えば現在広く知られているレジストで、ＫｒＦエキシ
マレーザ光に対してかなり感光性が高く、光透過率もよ
いと言われているＭＰ２４００（シブレイ社）を用いた
場合でもレジストの現像後のパターン６ａは第６図に示
す様非常に悪く、使用できそうにもない。For example, even when using MP2400 (Sibley), which is a currently widely known resist and is said to have fairly high sensitivity to KrF excimer laser light and good light transmittance, the pattern 6a after resist development is As shown in Fig. 6, it is very bad and seems almost unusable.
発明が解決しようとする課題
このようにパターン形状が悪い原因は、レジスト中の感
光体の光反応性が良くないためである。Problems to be Solved by the Invention The reason why the pattern shape is poor is that the photoreactivity of the photoreceptor in the resist is not good.
すなわち、従来のレジストに用いられているナフトキノ
ンジアジド系の感光体は、一般に２４８．４ｎｍ付近の
光に対し大きな透過率変化は示さない。That is, naphthoquinone diazide photoreceptors used in conventional resists generally do not show a large change in transmittance for light around 248.4 nm.
例えば膜厚１．Ｑμｍ のＭＰ２４００では、ＫｒＦ
ｘキシマレーザ（２４ｅ、４ｎｍ）を用いた露光前後の
透過率変化は第６図に示す様に２４８，４ｎｍにおいて
わずか数％程度であり、膜厚１．０μｍのノボラック樹
脂のＵＶ分光曲線を第７図に示すが、これと比較しても
明らかな様に、反応性の低い事がわかる。結果として低
感度となり、また透過率が低いために良好なレジストパ
ターン形状が得られない。For example, the film thickness is 1. In MP2400 of Qμm, KrF
The change in transmittance before and after exposure using x ximer laser (24e, 4 nm) is only a few percent at 248.4 nm, as shown in Figure 6. As shown in the figure, as is clear from comparison with this, it can be seen that the reactivity is low. As a result, the sensitivity is low, and since the transmittance is low, a good resist pattern shape cannot be obtained.
従って２４Ｊ４ ｎｍのエキシマレーザ光に対しよりよ
い反応性を示す新しいレジストの出現が待ち望まれてい
る。Therefore, the emergence of a new resist that exhibits better reactivity to 24J4 nm excimer laser light is eagerly awaited.
課題を解決するための手段
本発明は上記問題点を解決するために、パターン形成材
料を酸性とするもので、望ましくはペーハー４以下とす
るものである。Means for Solving the Problems In the present invention, in order to solve the above-mentioned problems, the pattern forming material is made acidic, preferably having a pH of 4 or less.
作用
パターン形成材料を酸性にする事により、パターン形成
材料内の感光性化合物の感応基、すなわちジアゾ基は分
解しやすい不安定な状態になり、光による反応がより促
進される。本発明者らは、種々の実験を行った結果パタ
ーン形成材料を、特にペーハー４以下に調整した場合は
上記の効果が絶大である事を発見した。またパターン形
成材料を酸性にするには、溶媒が酸性であるものを用い
る、樹脂が酸性であるものを用いる、酸性を示す第３成
分を混入させるなどのさまざまな手段が考えられるが、
本発明者らは、これらのいかなる方法を用いても、感度
向上や透過率変化量が大きくなる事を確認した。By making the functional pattern-forming material acidic, the sensitive group of the photosensitive compound in the pattern-forming material, ie, the diazo group, becomes unstable and easily decomposed, and the reaction by light is further accelerated. As a result of various experiments, the inventors of the present invention discovered that the above-mentioned effects are great when the pattern-forming material is adjusted to a pH of 4 or less. In addition, various methods can be considered to make the pattern forming material acidic, such as using an acidic solvent, using an acidic resin, or incorporating an acidic third component.
The present inventors have confirmed that no matter which method is used, the sensitivity can be improved and the amount of change in transmittance can be increased.
上記手段では、光未照射部も現像液に溶解しやすくなる
など酸の影響をうけやすくなり、現像液濃度を下げるな
どの手段を用いるのが望ましいが、光照射により、酸を
発生する第３成分をパターン形成材料内に混入させた場
合は、酸によるジアゾ基の反応促進が光照射部のみで発
生する事になるため、光未照射部は酸による影響をまっ
たくうけなくなり、現像液も従来と相違ないものを使用
する事ができる。With the above means, the unirradiated area becomes easily dissolved in the developer and is therefore susceptible to the effects of acid, so it is desirable to use means such as lowering the concentration of the developer. When the component is mixed into the pattern-forming material, the acid accelerates the reaction of the diazo group only in the light-irradiated areas, so the non-light-irradiated areas are completely unaffected by the acid, and the developer can be used as usual. You can use the same one.
実施例
次に実施例を用いて、前記発明をさらに詳細に説明する
が、°本発明はこれら実施例に何等制限されるものでは
ない。EXAMPLES Next, the invention will be explained in more detail using Examples, but the present invention is not limited to these Examples in any way.
（実施例１） 下記の組成で試薬を調整しパターン形成材料とした。(Example 1) A reagent was prepared with the following composition and used as a pattern forming material.
ｓｏ２ｃｌ 酸クロライド）３９
ノボラツク樹脂 ７ｇ酢酸
２０９ここで溶媒である
酢酸は酸性を示す為、このパターン形成材料のペーハー
は４．２である。so2cl acid chloride) 39 novolac resin 7g acetic acid
209 Since acetic acid, which is a solvent, is acidic, the pH of this pattern forming material is 4.2.
第１図を用いて本発明に係る、パターン形成材料を用い
たパターン形成方法を説明する。半導体基板等の基板１
上に上記本発明のパターン形成材料２を回転塗付し、１
．０μｍのレジスト膜を得る（第１図（ａ））。なお基
板１上には酸化膜、絶縁膜。A pattern forming method using a pattern forming material according to the present invention will be explained with reference to FIG. Substrate 1 such as a semiconductor substrate
The pattern forming material 2 of the present invention described above is applied by rotation, and 1
．． A resist film of 0 μm is obtained (FIG. 1(a)). Note that on the substrate 1 there is an oxide film and an insulating film.
導電膜等が形成されている場合が多い。次に２４８，４
ｎｍのエキシマレーザ光３でマスク４を通し、パターン
形成材料２を選択的にパルス露光する（第１図（ｂ）
）。そして最後に希薄なアルカリ土類金属用いて現像を
行うことにより、パターン形成材料２の露光部のみを溶
解除去し、レジストパターン２ａを得た（第１図（Ｃ）
）。なおこのときのレジストパターン２１Ｌはアスペク
ト比が９０度の好形状で感度は従来のレジストの２倍高
感度な７ ｓ ｒｎＪ／ｃａであった。In many cases, a conductive film or the like is formed. Then 248,4
The pattern forming material 2 is selectively exposed in pulses to a nm excimer laser beam 3 through a mask 4 (FIG. 1(b)).
). Finally, by performing development using a dilute alkaline earth metal, only the exposed portion of the pattern forming material 2 was dissolved and removed, and a resist pattern 2a was obtained (Fig. 1 (C)).
). The resist pattern 21L at this time had a good shape with an aspect ratio of 90 degrees, and a sensitivity of 7 s rnJ/ca, which was twice as sensitive as the conventional resist.
第２図にこのパターン形成材料の露光前後の紫外線分光
曲線図を示すが、露光後の透過率は約４０％と第６図に
示す従来のレジストの約１６％と比較しても明らかな様
、好反応性を示す事がわかる。Figure 2 shows the ultraviolet ray spectral curves of this pattern forming material before and after exposure, and it is clear that the transmittance after exposure is approximately 40%, compared with approximately 16% for the conventional resist shown in Figure 6. , it can be seen that it shows good reactivity.
（実施例２） 下記の組成で試薬を調整しパターン形成材料とした。(Example 2) A reagent was prepared with the following composition and used as a pattern forming material.
１．２．４−ナフトキノンジアゾスルフオン酸クロライ
ド ３９下記の樹脂
エチルセロンルプアセテート ２０ｇここで
上記樹脂は、カルボン酸を含有する為、酸性を示し、こ
のパターン形成材料はベー・・−が３６となっている。1.2.4-Naphthoquinone diazosulfonic acid chloride 39 20 g of the following resin ethyl seron lupacetate Here, the above resin contains carboxylic acid and therefore exhibits acidity, and this pattern forming material has a base value of 36. It has become.
またこの樹脂を１μｍ厚に成膜した時の紫外線分光曲線
図を第３図に示すが、２４８．４ ｎｍで７ｏ％と高い
透過率を示し、ＫｒＦ エキシマレーザ用パターン形成
材料に用いる樹脂として良好な結果が期待できる。Figure 3 shows the ultraviolet spectral curve when this resin is formed into a 1 μm thick film, showing a high transmittance of 7o% at 248.4 nm, making it a good resin for use in pattern forming materials for KrF excimer lasers. You can expect good results.
上記パターン形成材料を用いて実施例１と同様の実１倹
を行った結果、実施例１と同様の良好なパターンが、高
い感度とともに得られた。第４図にこのパターン形成材
料の露光前後の紫外線分光曲線図を示すが、露光後の２
４８．４ｍｍにおける透過率は５６％と非常に高いもの
となった。As a result of carrying out the same experiment as in Example 1 using the above pattern forming material, a good pattern similar to that in Example 1 was obtained with high sensitivity. Figure 4 shows the ultraviolet ray spectral curves of this pattern forming material before and after exposure.
The transmittance at 48.4 mm was extremely high at 56%.
（実施例３）
下記の組成で試薬を調整しパターン形成材料を作成し、
実施例１〜２と同様の実検を行った。(Example 3) A pattern forming material was prepared by adjusting the reagent with the following composition,
The same actual tests as in Examples 1 and 2 were conducted.
１．２．４−ナフトキノンジアゾスルフオン酸クロライ
ド ３ｇノボラック樹脂 ７ｇ
硫酸 ０，１ｇエチル
セロソルブアセテート ２０ｇその結果、実施
例１〜２と同様の良好な結果が得られた。1.2.4-Naphthoquinone diazosulfonic acid chloride 3g Novolac resin 7g
Sulfuric acid: 0.1 g Ethyl cellosolve acetate: 20 g As a result, the same good results as in Examples 1 and 2 were obtained.
（実施例４）
下記の組成で試薬を調整しパターン形成材料を作成し実
施例１〜３と同様の実験を行った。(Example 4) A pattern forming material was prepared by adjusting a reagent with the following composition, and experiments similar to those in Examples 1 to 3 were conducted.
１．２．４−ナフトキノンジアゾスルフォン酸りロライ
ドｓｇノボラック樹脂 ７Ｊ安
息香酸 ０．ｏｔｓｊｉエチ
ルセロソルブアセテート ２０ｇその結果、
実施例１〜３と同様な良好な結果が得られた。1.2.4-Naphthoquinone diazosulfonic acid chloride sg novolak resin 7J benzoic acid 0. otsji ethyl cellosolve acetate 20g As a result,
Good results similar to Examples 1 to 3 were obtained.
（実施例５）
下記の組成で試薬を調整しパターン形成材料を作成し実
施例１〜４と同様の実験を行った。(Example 5) A pattern forming material was prepared by adjusting a reagent with the following composition, and experiments similar to those in Examples 1 to 4 were conducted.
１．２．４−ナフトキノンシアシスｐフォン酸クロライ
ド３ｇノボラック樹脂 ７ｇオ
ニウム塩 ｃ）、ｏｒｓ ｇエ
チルセロンルブアセテート ２０ｇその結果
、実施例１〜４と同様の良好な結果が実施例１〜６より
高い感度で得られた。1.2.4-naphthoquinone siacis pphonic acid chloride 3 g Novolac resin 7 g Onium salt c), ors g Ethylceron rub acetate 20 g As a result, the same good results as Examples 1 to 4 were obtained from Examples 1 to 6. Obtained with high sensitivity.
発明の効果
本発明は、例えば２４８．４１ｍのＫｒＦエキシマレー
ザ光などに対し優れた感度、透過率変化を示すパターン
形成材料を提供するものであり、例えばＫｒＦエキシマ
レーザ光や遠紫外＆’Ｘ（ｄ１５６ｐＵＶ）ｉ光用レジ
ストとして用いた場合には高感度でありかつ形状の良い
サブミクロンオーダの微細パターンを容易に得る事が可
能で、半導体産業における超微細パターン形成にとって
価値大なるものである。Effects of the Invention The present invention provides a pattern forming material that exhibits excellent sensitivity and transmittance change to, for example, 248.41 m KrF excimer laser light. When used as a resist for d156pUV) i light, it is possible to easily obtain fine patterns on the submicron order with high sensitivity and good shape, and is of great value for the formation of ultra-fine patterns in the semiconductor industry.
第１図は本発明のパターン形成材料を用いたパターン形
成方法の工程断面図、第２図、第４図は本発明の一実施
例のパターン形成材料の紫外線分光分析図、第３図は本
発明の一実施例のパターン形成材料に用いる樹脂の紫外
線分光分析図、第５図は従来のパターン形成材料を用い
たパターン形成方法の工程断面図、第６図は従来のパタ
ーン形成材料の紫外線分光分析図、第７図はノボラック
樹脂の紫外線分光分析図である。
１・・・・・・基板、２・・・・・・本発明のパターン
形成材料、第
図
３・川・・エキシマレーザ光、
４・・・・・・マスク。FIG. 1 is a process cross-sectional view of a pattern forming method using the pattern forming material of the present invention, FIGS. An ultraviolet spectral analysis diagram of a resin used in a pattern forming material according to an embodiment of the invention, FIG. 5 is a process cross-sectional view of a pattern forming method using a conventional pattern forming material, and FIG. 6 is an ultraviolet spectral analysis diagram of a conventional pattern forming material. The analysis diagram, FIG. 7, is an ultraviolet spectral analysis diagram of the novolac resin. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Pattern forming material of the present invention, Figure 3...Excimer laser light, 4...Mask.
Claims (8)
物と、２４８．４ｎｍ付近で吸収の少い樹脂と、前記化
合物と樹脂を溶解可能な溶媒を含み酸性である事を特徴
とするパターン形成材料。(1) A pattern characterized by being acidic and containing a photosensitive compound that photoreacts with light around 248.4 nm, a resin that has little absorption around 248.4 nm, and a solvent that can dissolve the compound and resin. Forming material.
特徴とした特許請求の範囲第１項に記載のパターン形成
材料。(2) The pattern forming material according to claim 1, wherein the pattern forming material has a pH of 4 or less.
求の範囲第１項に記載のパターン形成材料。(3) The pattern forming material according to claim 1, wherein the solvent or resin is acidic.
求の範囲第１項に記載のパターン形成材料。(4) The pattern forming material according to claim 1, wherein the resin contains a carboxylic acid.
の範囲第１項に記載のパターン形成材料。 ▲数式、化学式、表等があります▼(5) The pattern forming material according to claim 1, wherein the resin is the following resin. ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
物と、２４８．４ｎｍ付近で吸収の少い樹脂と、酸性を
有する第３成分と、前記化合物、樹脂および成分を溶解
可能な溶媒とを含むパターン形成材料。(6) A photosensitive compound that photoreacts with light in the vicinity of 248.4 nm, a resin that has little absorption in the vicinity of 248.4 nm, a third component having acidity, and a solvent that can dissolve the compound, resin, and component. pattern-forming materials including;
物と、２４８．４ｎｍ付近で吸収の少い樹脂と、２４８
．４ｎｍ付近の光で酸を発生する第３成分と、前記化合
物、樹脂および成分を溶解可能な溶媒とを含むパターン
形成材料。(7) A photosensitive compound that photoreacts with light around 248.4 nm, a resin that has little absorption around 248.4 nm, and 248
．． A pattern forming material comprising a third component that generates acid with light of around 4 nm, and a solvent capable of dissolving the compound, resin, and component.
特徴とする特許請求の範囲第７項に記載のパターン形成
材料。(8) The pattern forming material according to claim 7, wherein the third component that generates an acid is an onium salt.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63255112A JPH02101462A (en) | 1988-10-11 | 1988-10-11 | Pattern forming material |
| US07/696,994 US5169741A (en) | 1988-10-11 | 1991-05-03 | Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63255112A JPH02101462A (en) | 1988-10-11 | 1988-10-11 | Pattern forming material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02101462A true JPH02101462A (en) | 1990-04-13 |
Family
ID=17274269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63255112A Pending JPH02101462A (en) | 1988-10-11 | 1988-10-11 | Pattern forming material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02101462A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60175046A (en) * | 1983-12-20 | 1985-09-09 | ミネソタ マイニング アンド マニユフアクチユアリング コンパニ− | Radiant photosensitive composition |
| JPS61277679A (en) * | 1985-05-15 | 1986-12-08 | オーシージー ミクロエレクトロニック マテリアルズ インコーポレーテッド | Beta-ketoester or cyclic acetal or cyclic ketal of beta-amide, composition, image formation and product therefrom |
| JPS6261047A (en) * | 1985-09-12 | 1987-03-17 | Fuji Photo Film Co Ltd | Photosensitive composition |
| JPS6336235A (en) * | 1986-07-31 | 1988-02-16 | Japan Synthetic Rubber Co Ltd | Radiation sensitive composition |
| JPS63253933A (en) * | 1987-04-10 | 1988-10-20 | Matsushita Electric Ind Co Ltd | Contrast enhanced material for pattern formation |
| JPS63253938A (en) * | 1987-04-10 | 1988-10-20 | Matsushita Electric Ind Co Ltd | Pattern forming material |
| JPS6433543A (en) * | 1986-06-06 | 1989-02-03 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPH01106036A (en) * | 1987-10-20 | 1989-04-24 | Matsushita Electric Ind Co Ltd | Pattern forming material |
| JPH0210355A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | Pattern forming material |
| JPH0246461A (en) * | 1988-08-05 | 1990-02-15 | Matsushita Electric Ind Co Ltd | Contrast enhancing material for pattern formation |
| JPH0299956A (en) * | 1988-10-06 | 1990-04-11 | Matsushita Electric Ind Co Ltd | Contrast enhancement material for pattern formation |
-
1988
- 1988-10-11 JP JP63255112A patent/JPH02101462A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60175046A (en) * | 1983-12-20 | 1985-09-09 | ミネソタ マイニング アンド マニユフアクチユアリング コンパニ− | Radiant photosensitive composition |
| JPS61277679A (en) * | 1985-05-15 | 1986-12-08 | オーシージー ミクロエレクトロニック マテリアルズ インコーポレーテッド | Beta-ketoester or cyclic acetal or cyclic ketal of beta-amide, composition, image formation and product therefrom |
| JPS6261047A (en) * | 1985-09-12 | 1987-03-17 | Fuji Photo Film Co Ltd | Photosensitive composition |
| JPS6433543A (en) * | 1986-06-06 | 1989-02-03 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPS6336235A (en) * | 1986-07-31 | 1988-02-16 | Japan Synthetic Rubber Co Ltd | Radiation sensitive composition |
| JPS63253933A (en) * | 1987-04-10 | 1988-10-20 | Matsushita Electric Ind Co Ltd | Contrast enhanced material for pattern formation |
| JPS63253938A (en) * | 1987-04-10 | 1988-10-20 | Matsushita Electric Ind Co Ltd | Pattern forming material |
| JPH01106036A (en) * | 1987-10-20 | 1989-04-24 | Matsushita Electric Ind Co Ltd | Pattern forming material |
| JPH0210355A (en) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | Pattern forming material |
| JPH0246461A (en) * | 1988-08-05 | 1990-02-15 | Matsushita Electric Ind Co Ltd | Contrast enhancing material for pattern formation |
| JPH0299956A (en) * | 1988-10-06 | 1990-04-11 | Matsushita Electric Ind Co Ltd | Contrast enhancement material for pattern formation |
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